Co/Cu92Mn8/Co结构中的低场巨磁电阻研究

对三明治结构的Co/Cu/Co和Co/Cu₉₂Mn₈/Co系列的巨磁电阻效应进行了研究,发现两者的巨磁电阻均随中介层厚度作周期性振荡,但是接近反相.作为与Co/Cu/Co系统的比较,发现若在Cu基中稀释Mn原子,巨磁电阻随外磁场变化的曲线会有非常大的改变,同时饱和场或开关场也有较大的下降,这意味着有可能为Co/Cu金属多层膜的巨磁电阻的实用化研究开辟出一条新的思路. 关键词：     

IrMn基反铁磁自旋阀的巨磁电阻效应

用第一性原理方法研究了在微观尺度具有三重对称磁结构的IrMn合金的反铁磁自旋阀(AFSV)的电子输运.研究表明:基于有序L1₂相IrMn合金的Co/Cu/IrMn自旋阀的巨磁电阻(GMR)效应具有三重对称性,可以利用这一特性区分反铁磁材料的GMR与传统铁磁材料的GMR.基于无序γ相IrMn合金的IrMn(0.84 nm)/Cu(0.42 nm)/IrMn(0.42 nm)/Cu(0.42 nm)(111) AFSV的电流平行平面构型的GMR约为7.7％,大约是电流垂直平面构型的GMR(3.4％)的两倍,明显大于实验中观测到的基于共线磁结构的FeMn基AFSV的GMR. 关键词： 反铁磁自旋阀 巨磁电阻效应 非共线磁结构 电流平行平面结构     

FeCuNbSiB单层膜和三明治膜的磁特性与巨磁阻抗效应

用射频溅射法制备了Fe_73.5Cu₁Nb₃Si_13.5B₉单层膜和 Cu或Ag作为中间层的三明治膜.溅态膜为非晶态结构.磁畴观察结果表明,单层膜在380℃退火后,呈现均匀磁化的纳米晶结构,该样品软磁特性最佳,其巨磁阻抗效应最大,在13MHz,最大磁阻抗比纵向为18％,横向为14％.溅态三明治膜具有较大的巨磁阻抗效应,在13MHz,Cu夹层三明治膜的最大磁阻抗比纵向为32％,横向为11％,Ag夹层三明治膜的最大磁阻抗比纵向为47％,横向为57％.Cu夹层三明治膜经250℃退火后,在低频下表现为巨磁电感效应,在100kHz,最大磁电感比为1733％. 关键词：     

Co/Cu多层膜反铁磁第一、第二峰耦合结构的磁电阻与结构研究

确定了Co/Cu多层膜的第一和第二反铁磁耦合对应的非磁层(Cu)的厚度,对相同厚度铁磁层(Co)制备了第一与第二反铁磁耦合的Co/Cu多层膜,利用同步辐射掠入射X射线散射(衍射)技术研究了耦合多层膜的界面结构,探索了耦合多层膜中磁电阻增强的可能原因.     

双合成反铁磁结构及其对自旋阀巨磁电阻效应的影响

用直流磁控溅射方法制备了双合成反铁磁结构Co₉₀Fe₁₀(5 nm)/Ru(x nm)/Co₉₀Fe₁₀(3 nm)/Ru(y nm)/Co₉₀Fe₁₀(5 nm)(x=0.45,0.45,1.00; y=0.45,1.00,1.00)的系列样品,并对样品的性能及其作为钉扎层对自旋阀巨磁电阻(GMR)效应的影响进行了研究 关键词： 双合成反铁磁 自旋阀 巨磁电阻     

Co/Ni多层膜垂直磁各向异性的研究

采用直流磁控溅射法在玻璃基片上制备了Pt底层的Co/Ni多层膜样品, 对影响样品垂直磁各向异性的各因素进行了调制, 通过样品的反常霍尔效应系统的研究了Co/Ni多层膜的垂直磁各向异性. 结果表明, 多层膜中各层的厚度及周期数对样品的反常霍尔效应和磁性有重要的影响. 通过对多层膜各个参数的调制优化, 最终获得了具有良好的垂直磁各向异性的Co/Ni多层膜最佳样品Pt(2.0)/Co(0.2)/Ni(0.4)/Co(0.2)/Pt(2.0), 经计算, 该样品的各向异性常数K_eff 达到了3.6×10⁵ J/m³, 说明样品具备良好的垂直磁各向异性. 最佳样品磁性层厚度仅为0.8 nm, 样品总厚度在5 nm以内, 可更为深入的研究其与元件的集成性.     

真空退火对周期性界面掺杂Ni80Co20薄膜磁性的影响

用磁控溅射方法制备了两个具有不同Fe层厚度的[Ni80Co20(L)/Fe(tFe)]N多层膜系列样品,其中tFe=0.1和2nm.研究了两个系列样品的磁及输运性质随Ni80Co20层厚度L的变化关系.在退火态[Ni80Co20(L)/Fe(0.1nm)]N系列样品中,发现各向异性磁电阻(AMR)和横向磁电阻(TMR)在L为10nm附近存在一较宽的增强峰,其峰位与制备态[Ni80Co20(L)/Fe(2nm)]25多层膜TMR的增强峰位一致.当L小于Ni80Co20合金的电子平均自由程时,制备态[Ni80Co20(L)/Fe(0.1nm)]N样品的各向异性磁电阻(Δρ)和零场电阻率ρ都随L的减小而增加,且ρ的增量超过Δρ的增量.ρ随L的依赖关系可采用Fuchs-Sondheimer理论描述.在L小于10nm时,制备态界面掺杂[Ni80Co20(L)/Fe(0.1nm)]N系列样品的矫顽力Hc随L近似直线上升,在L大于10nm后趋于饱和.退火后Hc显著下降.实验结果表明,在多层膜结构中,界面散射可导致ρ和Δρ的增强;磁性合金界面层还可导致畴结构的改变及TMR和AMR的增强.     

Mn和Co线性单原子链填充Cu纳米管的稳定性和磁性

基于密度泛函理论框架下的第一性原理计算,系统地研究了过渡金属(TM)Mn和Co线性单原子链填充Cu纳米管所形成复合结构的稳定性和磁性.相对于孤立单原子链,复合结构的结合能大大增加,表明Cu纳米管的包裹使得Mn和Co单原子链的稳定性显著增强.随着管内TM原子间距的增加,Mn@CuNT复合结构表现出由反铁磁向铁磁的磁相变,而Co@CuNT复合结构则表现出由铁磁向反铁磁的磁相变.相对于自由单原子链,复合结构的磁晶各向异性能显著增强,且Cu纳米管的包裹使得Mn原子链的易磁化方向发生了改变.     

分子束外延生长Fe/Fe_(50)Mn_(50)双层膜的交换偏置

利用表面磁光克尔效应和铁磁共振对分子束外延生长的Fe/Fe50Mn50双层膜的交换偏置场和矫顽力进行了研究,实验结果表明,当反铁磁层厚度小于5.5!nm时,不出现交换偏置,而当大于这一厚度时,出现交换偏置;大约在7!nm时,达到极大值.随着反铁磁层厚度的继续增大,偏置场和矫顽力随Fe50Mn50膜厚的增大而下降.铁磁共振实验结果表明样品的磁性存在单向各向异性.并对上述结果进行了讨论.     

Co SiO2颗粒膜的巨磁电阻效应

采用离子束溅射方法在玻璃基片上制备了一系列的Co－SiO\-2颗 粒膜样品,并对样品的巨磁电阻效应进行了研究.在Co35(SiO\-2)65(体积 百分比)颗粒膜样品中,观测到室温下近4%的巨磁电阻效应.研究了不同基片温度对巨磁电 阻效应的影响并发现,随着基片温度的升高样品的巨磁电阻效应下降.根据样品的电阻率温度关系曲线分析,在铁磁金属- 非磁绝缘介质颗粒膜中,除了电子自旋相关隧穿效应外, 可能还存在其他的导电机制. 关键词：     

Effects of Ni buffer layer on giant magnetoresistance in Co/Cu/Co sandwich

In order to increase the sensitivity of Co/Cu/Co sandwiches, different thickness Ni layers were used as buffer layer. It was found that in the Co 55 Å/Cu 35 Å/Co 55 Å sandwiches with different thickness Ni buffer layers, MR ratios between 3.5% and 5.6% could be obtained, and the coercive forces were about 12 Oe. Hence, the maximum field sensitivity could be enhanced to about 1%/Oe. Further investigation from the results of atomic force microscopy showed the improvement of the interfacial flatness in the sandwiches with Ni buffer layer. The microstructure observed by high-resolution electron microscope demonstrated the different structure of the two Co layers in the Ni buffered sandwich, which directly determined the small saturation field of the sandwich. This was confirmed by the magnetic behaviors of the two Co layers calculated from the experimental hysteresis loops. All these showed that the usage of a Ni buffer layer could result in interfacial improvement, different crystalline structure, and small saturation field in the Co/Cu/Co sandwich. These enhanced the electron spin scattering at the Co–Cu interfaces and finally enlarged the giant magnetoresistance and the sensitivity in the sandwich.     

Electrodeposition and characterization of Cu/Co multilayers: Effect of individual Co and Cu layers on GMR magnitude and behavior

The present work discusses the successful electrodeposition of Cu/Co multilayers, exhibiting appreciable GMR of 12-14% at room temperature. The effect of individual Cu and Co layers on the magnitude and behavior of GMR has been studied. By varying the thickness of individual layers the field at which saturation in GMR is observed can be controlled. It was observed that for lower thicknesses of Co layer, the saturation fields are reduced below 1 kOe. The Cu layer thickness seems to control the nature of magnetic coupling and the saturation field, with the two showing a correlation.     

Effect of the structural quality of the buffer on the magnetoresistance and the exchange coupling in sputtered Co/Cu sandwiches

The effect of the structural quality of the buffer stack on the structural properties, giant magnetoresistance (GMR) and the quality of the antiferromagnetic coupling has been investigated for Co/Cu/Co sandwiches prepared by DC-magnetron sputtering. Three kinds of buffers were employed: type A: Cr(6 nm)/Co(0.8 nm)/Cu(10 nm), type B: Fe(6 nm)/Co(0.8 nm)/Cu(10 nm) and type C: Cr(4 nm)/Fe(3 nm)/Co(0.8 nm)/Cu(10 nm). For B and C type buffers, the antiferromagnetic alignment is very interesting at zero field with a coupling strength larger than 0.4 erg/cm² and a GMR signal reaching 5% at room temperature. However, for the A type buffer the antiferromagnetic coupling completely disappears, while the GMR drops to about 0.8%. X-ray diffraction, atomic force microscopy and transmission electron microscopy have been performed in order to understand the origin of the observed difference in the magnetic properties. The results show a strong difference in the average surface roughness, 1.15 nm and 0.35 nm, respectively for the A and C types buffers, and demonstrate that the quality of the surface of the buffer is the key to optimize both the GMR and the indirect exchange coupling. Received 11 July 2000     

Magnetic properties of transition metal superlattices

The magnetic coupling between Fe layers separated by spacer layers consisting of up to two atomic planes of 3d transition metal elements (Sc, Ti, V, Cr, Fe, Co, Ni and Cu) has been studied systematically by using two complimentary theories based on cluster and band structure methods. The Fe layers are found to be ferromagnetically coupled in all cases except for Cr where this coupling alternates from ferro- to anti-ferromagnetic depending on whether the spacer layers are odd or even. Furthermore the spacer layers involving Sc, Ti and V are anti-ferromagnetically coupled to Fe while Co and Ni layers are coupled ferromagnetically.     

Enhancement of magnetoresistance sensitivity in Co/Cu/NiFe trilayers by softening the Co hard layer

Co/Cu/NiFe trilayers were prepared by sputtering without magnetic field applied. We have found that the Co(2 nm)Cu(1 nm)NiFe(2 nm) trilayer using Ta as buffer layer exhibits an enhanced magnetoresistance (MR) sensitivity by a factor of more than 6 and a low saturation field of 9.3 Oe. Experimental results have demonstrated that the low saturation field is attributed to the softening of the Co layer by depositing the Co(2 nm)Cu(1 nm)NiFe(2 nm) sandwich on Ta layer. The decrease of the coercivity of the Co layer also plays an important role in the enhancement of MR sensitivity by reducing the effective coercivity of the NiFe layer, which is discussed in terms of the change in interlayer coupling.     

Thermal stability of spin valve sensors using artificial Co/Ir based ferrimagnets

Hard-soft spin valve structures have been grown by molecular beam epitaxy on MgO(0 0 1) substrates. The hard magnetic layer consists of an artificial Co/Ir/Co ferrimagnet system (AFi), while a Fe/Co bilayer from the buffer has been used as a soft detection layer. The Fe layer has been grown at 600°C giving rise to a monocrystalline layer with a BCC structure. Consequently, this layer presents a hard and a easy magnetization axis, respectively, along the BCC [1 1 0] and the [1 0 0] directions. The AFi system presents dramatic differences after successive annealing steps up to 350°C. An increase of the GMR from 3% to 3.5% is observed after annealing at 250°C while the coercive field of the AFi and the GMR plateau are strongly reduced. After further annealing at higher temperature the GMR drops down accompanied with a strong decrease in the antiparallel alignment amount in the AFi system. Rutherford back scattering measurements have been performed to investigate the changes in the interface morphology and to correlate it to the magneto-transport properties.     

Influence of superparamagnetic regions on the giant magnetoresistance of electrodeposited Co–Cu/Cu multilayers

The room-temperature magnetoresistance (MR) of electrodeposited Co–Cu/Cu multilayers was investigated. Samples were prepared on either a polycrystalline Ti foil or on a silicon wafer covered with a Ta buffer and a Cu-seed layer. The field dependence of the magnetoresistance was analyzed by decomposing the GMR into ferromagnetic (FM) and superparamagnetic (SPM) contributions, whereby the field dependence of the latter could be described by a Langevin function. In order to better understand the influence of the deposition conditions on the GMR in electrodeposited multilayers, the evolution of the relative importance of the two GMR contributions is discussed in terms of the Co dissolution process during the Cu deposition pulse.     

Magnetic phase transition in Co/Cu/Ni/Cu(100) and Co/Fe/Ni/Cu(100)

Magnetic phase transitions in coupled magnetic sandwiches of Cu/Co/Cu/Ni/Cu(100) and Cu/Co/Fe/Ni/Cu(100) are investigated by photoemission electron microscopy. Element-specific magnetic domains are taken at room temperature to reveal the critical thickness at which the magnetic phase transition occurs. The results show that a coupled magnetic sandwich undergoes three types of magnetic phase transitions depending on the two ferromagnetic films' thickness. A phase diagram is constructed and explained in the process of constructing Monte Carlo simulations, which corroborate the experimental results.     

Micromagnetic Simulation of Transfer Curve in Giant-Magnetoresistive Head

The transfer curve of the giant-magnetoresistive （GMR） magnetic head represents its most important property in applications, and it is calculated by the micromagnetic modeling of the free layer and the pinned layer in the heart of the GMR head. Affections of the bias hard magnetic layer and the anti-ferromagnetic pinning layer are modeled by effective magnetic fields. The simulated transfer curve agrees with experiment quite well, therefore the values of these effective magnetic fields can be determined by the model. A synthetic antiferromagnetic spin valve structure GMR head is also analyzed for comparison.