LA声子对激子qubit纯退相干的影响

在一个抛物量子点中,以激子的真空态和基态作为量子比特(qubit),采用求密度矩阵元的方法,计算了由形变势下声学声子引发的激子量子比特纯退相干.找到了激子量子比特纯退相干因子对时间、温度和量子点受限长度的依赖关系.研究发现,激子量子比特的退相干因子在2.5ps的时间范围内随时间的增加而迅速增加,其纯退相干时间在ps量级;在温度即使为绝对温度0K时由LA声子引发的退相干依然存在,在温度大于3K后退相干因子随温度的增大而开始迅速增大;并同时发现量子点受限长度对退相干因子有重要影响,激子越受限退相干越快.研究结果表明,对激子量子比特使用适当大小量子点,且保持环境低温,并采用低能超快光学操作可以有效地抑制声子对激子量子比特纯退相干的影响. 关键词： 量子点 量子信息 量子比特     

非晶态的声子谱

声子是与固体中原子的热振动相联系的一种量子,也称声量子.非晶固态材料(例如各种非品半导体、金属玻璃合金和无序合金)以及含有杂质、空位和缺陷的晶体的许多特性都与声子有密切联系. 一、热振动与声子谱 固体中的原子在它平衡位置附近一刻不停地振动,这就是原子的热振动.原子     

分子磁体与环境的纠缠和退相干

本文研究了双轴分子磁体在耗散环境中的相干量子隧穿,作为环境的声子库抑制了相干量子隧穿,从而引起分子磁体中薛定谔猫态的退相干. 而环境内部声子之间的相互作用会导致分子磁体与热库之间退耦合,于是对退相干有一定的抑制作用. 在绝热近似和非绝热近似下,借助于约化密度矩阵计算了超Ohmo耗散中分子磁体与环境之间的纠缠度,当纠缠达到最大时,相干隧穿被完全抑制.     

分子环境变化对振动退相时间影响的实验研究

物质分子振动退相时间测量是一种非标记无损分子检测方法, 用超连续谱时间分辨相干反斯托克斯拉曼散射方法可同时获得分子振动谱和退相时间. 实验以苯甲腈和甲醇为样品, 研究当分子环境变化时, 其主要振动谱的振动退相时间变化情况. 将苯甲腈与无水乙醇混合, 测量了苯甲腈分子1017, 2247和3085 cm^-1三个典型分子振动的退相时间随环境变化的规律, 并得到了变化后的振动退相时间. 测量了甲醇分子2851, 2960 cm^-1两个相邻分子振动的退相时间随环境的变化情况, 给出实验变化规律. 这种方法具有检测分子所处环境变化和分子相互作用的能力, 在生命科学、分子生物学和材料科学等研究领域中具有重要的应用前景.     

飞秒相干态相位差分光谱学

 理论上证明了测量脉冲对激发的相干态布居等价于测量单脉冲激发的感应极化,能同时获得瞬态相干光学过程的振幅与相位信息,发展了双通道飞秒脉冲对实验技术,提出了相位差分光谱实验方法。研究了半导体GaAs和稀土材料的飞秒相干态动力学过程,根据自相关曲线和样品信号的关系得到相位光谱。理论拟合得液氮温度下GaAs的激子退相时间为190fs;单晶Nd:YVO₄和粉末Nd:YAG 4f电子在室温下的退相时间为300fs。并研究了液氮温度下稀土材料原子核波包的动力学过程。     

室温下CdSe胶体量子点超快自旋动力学

利用时间分辨法拉第旋转光谱技术研究了室温下CdSe胶体量子点的自旋相干特性.获得了不同磁场下的自旋退相干时间,并分析了自旋退相干的物理机理.零磁场时量子点激子自旋退相干时间为102 ps,主要受电子与核自旋之间的超精细相互作用所影响.当外加横向磁场强度为250 mT时,激子自旋退相干时间为294 ps;增大磁场强度,自旋退相干时间逐渐减小.在较强磁场环境中(≥250mT),量子点激子自旋动力学由非均匀退相干机制所主导.     

由多层无序合金膜组成的超晶格的声子结构

本文推广应用CPA方法来计算由多层无序合金膜组成的超晶格的声子结构.仅考虑合金膜内的质量无序,而对力常数的无序采用虚晶(Virtual Crystal)近似,我们计算了无序超晶格的结构平均声子格林函数的自能及声子态密度曲线,并由此对无序引起该种材料振动模式的变化作了定性的分析.     

基于能量的轨线面跳跃新退相干修正方法

本文受轨线分叉修正面跳跃(BCSH)方法[J. Xu and L. Wang, J. Chem. Phys. 150，164101 (2019)]的启发，提出了两种轨线面跳跃新退相干时间计算公式. 本研究的线型和指数型公式均将退相干时间刻画为绝热势能面之间能差的函数，能够准确地描述BCSH预测的由波包反射导致的退相干效应. 在包含了200个多样化的系列模型中，采用不同的初始核动量，以精确全量子解为参考，对涉及的参数进行了系统训练. 相比广泛使用的退相干公式，两种新方法在Tully的三个标准模型中都显著地提高了可靠性，并保持高计算效率.     

Fe/Si薄膜中相干声学声子的光激发研究

本文通过抽运-探测技术, 利用飞秒激光脉冲激发并探测了Fe/Si薄膜中的高频相干声学声子. 通过经典的阻尼谐振函数, 对声学声子的动力学行为进行了拟合. 实验及拟合结果表明, 该声学声子的共振频率约为0.25 THz, 其退相时间约为12 ps, 且都与激发光的波长和能量密度无关. 声学声子的振幅随着激发光能量密度的增加而线性地增强. 临界参数12_τe-ph/T约为0.6, 表明相干声学声子的驱动力主要来源于电子热应力的贡献. 最后, 结合薄膜的厚度和质量密度, 可以得到室温下垂直于该Fe/Si薄膜表面(out of plane) 的弹性常数C_⊥约为283 GPa.     

电声子相互作用对量子点分子中单电子隧穿的影响

研究了双量子点系统中的电子隧穿动力学过程，在考虑电子与声子相互作用的情况下用基于 正则变换的微扰方法解析地得到了电子动态隧穿电流的表达式. 并且详细分析电子与声子耦 合引起的退相干问题，在此基础上指出了可能的退耦机理. 关键词： 电声子相互作用 双量子点 隧穿     

Dephasing times in quantum dots due to elastic LO phonon-carrier collisions

Interpretation of experiments on quantum dot (QD) lasers presents a challenge: the phonon bottleneck, which should strongly suppress relaxation and dephasing of the discrete energy states, often seems to be inoperative. We suggest and develop a theory for an intrinsic mechanism for dephasing in QDs: second-order elastic interaction between quantum dot charge carriers and LO phonons. The calculated dephasing times are of the order of 200 fs at room temperature, consistent with experiments. The phonon bottleneck thus does not prevent significant room temperature dephasing.     

Influence of acoustic phonons on dephasing of free excitons in quantum wells

A theory of the dephasing rate of quasi-2D free excitons due to acoustic phonon interaction at low exciton densities is presented. Both deformation potential and piezoelectric couplings are considered for the exciton–phonon interaction in quantum wells. Using the derived interaction Hamiltonian obtained recently by us, exciton linewidth and dephasing rate are calculated as a function of the exciton density, exciton temperature, exciton momentum and lattice temperature.     

Coherent acoustic phonon oscillations in semiconductor multiple quantum wells with piezoelectric fields

Large coherent acoustic phonon oscillations were demonstrated using InGaN/GaN multiple quantum wells with piezoelectric fields. With UV femtosecond pulse excitation, photogenerated carriers screened the piezoelectric field and initiated the displacive coherent phonon oscillations. The specific phonon frequency was selected by the coupling between the periodic carrier distribution and the corresponding acoustic phonon mode. The induced acoustic phonon oscillation resulted in piezoelectric field modulation and then caused absorption variation through the quantum confined Franz-Keldysh effect. The wave vector uncertainty due to the finite sample width was found to determine the observed dephasing time.     

Dephasing in gapless carbon nanotubes and nanostrips and the suppression of interference in a quantum interferometer based on them

The phonon dephasing of an electron in a finite carbon nanotube and a nanostrip with a gapless spectrum has been studied. It has been shown that its main mechanism is the interaction with soft phonons whose frequencies correspond to the phonon time of transmission through the nanotube. The derived formulas have been used to analyze the suppression of interference in an interferometer consisting of two nanotubes or nanostrips connecting two-dimensional electron seas. Dephasing because of zero-point and thermal vibrations has been considered.     

The effects of LO phonons on charge qubit

In this paper, we study the influence of LO phonon (LOP) on the charge qubit in a quantum dot (QD), and find that the eigenenergies of the ground and first excited states are reduced due to the electron-LOP interaction. At the same time, the time evolution of the electron probability density is obtained, the dependence of the oscillating period on electron-LOP coupling constant is found, the relation of between the oscillating period and the confinement length of the QD is calculated. Finally, we consider the effects of the electron-LOP coupling constant on pure dephasing factor under considering the correction of electron-LOP interaction for the wave functions. Our results suggest that electron-LOP interaction has very important effects on charge qubit.     

Zur Theorie der Resonanzstreuung an Störstellen im Festkörper

On the Theory of Resonant Scattering at Impurity Centres in Solids For the case of a weak exciting field general formulae for describing both the stationary and the non-stationary behaviour of resonant scattering are derived. By taking into account that the dephasing of electronic transitions of impurity centres in solids cannot be described by constant phase relaxation rates the influence of one and two phonon processes on the stationary scattering spectrum is investigated.     

Influence of complexation and solid environment on the vibrational coherence of DCl

The vibrational dynamics of DCl molecules embedded in different cryogenic matrices is studied by time resolved infrared Degenerate Four Wave Mixing experiments using the infrared free electron laser CLIO. The coherence behaviour of the D-Cl stretch in pure argon as well as in mixed argon/nitrogen van der Waals solids is investigated. Different interactions between the excited molecules and their environment are probed: the van der Waals interaction between the trapped molecules and the solid lattice and the interaction binding complexes trapped in the matrix (either the vdW interaction between DCl and nitrogen or weak H bonds in (DCl)_n clusters). The dependence of the dephasing time on the solid and on specific interactions is clearly observed.     

Optical phonon dynamics of GaAs studied with time-resolved terahertz spectroscopy

We investigate the reflection near the reststrahlen band of the optical phonon in bulk GaAs in the time domain, using time-resolved terahertz spectroscopy. We find that the dynamics of the reflection measured for GaAs differs strongly from the reflection dynamics that would be expected for a TO phonon with a frequency-independent dephasing time.     

Relaxation and dephasing of multiexcitons in semiconductor quantum dots

We measure the dephasing time of ground-state excitonic transitions in InGaAs quantum dots under electrical injection in the temperature range from 10 to 70 K. Electrical injection into the barrier region results in a pure dephasing of the excitonic transitions. Once the injected carriers fill the electronic ground state, the biexciton to exciton transition is probed and a correlation of the exciton and biexciton phonon scattering mechanisms is found. Additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.