电子束泵浦钙钛矿纳米晶随机激射的瞬态发光特性

为了满足瞬态光学系统对瞬时显像技术的要求,提出了一种基于钙钛矿纳米晶随机激射的瞬时发光方法.从CsPbBr3纳米晶薄膜的制备与表征出发,分析了该类有源薄膜的制备方法与手段.结合应用需要,设计了以微通道板为核心的电子束泵浦结构,并通过实验验证了CsPbBr3纳米晶薄膜在电子束泵浦下的激射效果,分析了其激射原理与物理现象.最后通过瞬时光泵浦的方法验证了CsPbBr3纳米晶薄膜的瞬时优势.该新型显像薄膜的瞬时探测系统中,不但具有较好的瞬态特性与时间分辨率,而且还可以利用电子束泵浦诱发激射来形成第二级的光放大,进而提升器件的整体探测能力.     

Temperature dependent characteristics of InAs/GaAs quantum dot laser grown by gas source molecular beam epitaxy

We report on the temperature dependent lasing characteristics of InAs/GaAs quantum dot lasers under continuous wave mode. The five-stacked InAs quantum dots were grown by gas-source molecular beam epitaxy with slightly different thickness. Ridge waveguide laser with stripe width of 6 μm was processed on the growth structure. The characteristic temperature was measured as high as infinity in the temperature range of 80–180 k. With the increase of injection current, the lasing spectra of laser diode broaden gradually at low temperature of 80 k. However, when the operation temperature increases from 80 to 300 K, the width of lasing spectrum reduces gradually from 40 to 2.0 nm. The lasing process is obviously different from that of a reference quantum well laser which widens its width of lasing spectra by increasing operation temperature. These experiments demonstrate that a carrier transfer from the smaller size of dots into larger dots caused by thermal effect play an important role in the lasing characteristic of quantum dot lasers. In addition, the laser can operate at maximum temperature of 80 °C under continuous wave mode with a maximum output power of 52 mW from one facet at 20 °C. A wavelength thermal coefficient of 0.196 nm/K is obtained, which is 2.8 times lower than that of QW laser. The low wavelength thermal coefficient of quantum dot laser is mainly attributed to its broad gain profile and state filling effects.     

ZnCdO/ZnO – a new heterosystem for green‐wavelength semiconductor lasing

We report on our efforts to cultivate the ternary compound ZnCdO as a semiconductor laser material. Molecular beam epitaxy far from thermal equilibrium allows us to overcome the standard solubility limit and to fabricate alloys with band gaps ranging from 3.4 down to 2.1 eV. Optimized structures containing well‐defined quantum wells as active zones are capable of low‐threshold lasing under optical pumping up to room temperature. The longest lasing wavelength achieved so far is 510 nm.     

ZnO粉末中无序激射现象时间分辨的研究

采用抽运-探测时间分辨方法实验研究了半导体材料ZnO纳米颗粒粉末中的无序激射现象.在2 67nm激光的抽运下，通过精确控制抽运光的能量和样品表面的抽运面积，获得了宽度小于1n m的单模无序激射光谱和多峰的多模无序激射光谱.时间分辨的抽运-探测结果显示，此时样 品的上能级寿命仅为几个皮秒，证明了ZnO粉末的单模无序光谱是受激辐射的结果. 关键词： 高散射介质 多重散射 抽运-探测 无序激射     

微腔中单量子点的激光输出特性研究

研究一个四能级量子点耦合到单模光学腔中的量子系统,利用系统的主方程作数值模拟计算微腔中单量子点的激光输出强度随非相干泵浦的变化关系.结果显示量子点在泵浦作用下激光的输出有一个阈值;且量子点和腔模耦合强度增强时,产生激光的阈值明显减小,输出激光的峰值却增大.当泵浦作用继续增强到一定程度,因激光能级间的相干性被过强的非相干泵浦所破坏,单量子点激光输出变为零----出现了淬灭现象.     

基于钠硼铝硅酸盐玻璃的PbSe量子点红外单模光纤激光

根据实验制备的钠硼铝硅酸盐PbSe量子点玻璃及其透射电子显微镜(TEM)图、吸收谱和发射谱,计算机数值模拟了以PbSe量子点作为激活增益介质的红外单模光纤激光。应用遗传算法,通过数值求解粒子数速率方程和激光谐振腔振荡方程,优化计算了量子点光纤激光器(QDFL)的最佳抽运波长、光纤长度、掺杂浓度及出射镜反射率。结果表明:饱和抽运功率为2 W,在1676nm激光波长处,QDFL最大输出功率可达1.36 W,抽运效率达68%。与通常的掺稀土离子(Yb3+、Er3+)的光纤激光器相比,QDFL具有抽运效率高、激励阈值低、掺杂密度可调、光纤饱和长度短等特点。由于量子点辐射波长的尺寸依赖特性,容易形成多波长激射或波长可调的新型激光器。     

ZnO random laser spectra under nanosecond pumping

Spectra of ZnO random lasers were obtained using a Peltier-cooled CCD camera Videoscan-285 at a single shot of nanosecond pumping. It was demonstrated that these spectra differ essentially from lasing spectra under picosecond pumping: as a rule, the line widths are significantly larger and the spectra often change essentially from shot to shot in a random manner on the same pumping spot. We suggest that large line widths can be the result of many lasing acts appearing during a single pumping pulse and of the lasing frequency changing in every lasing act. The random variations of spectra from shot to shot can be called forth by spontaneous emission fluctuations.     

ZnO薄膜受激发射特性的研究

氧化锌薄膜因其大的激子结合能和强的光发射、激光阈值低和能在高温下工作等优点而成为制备短波长激光、发光二极管等光电子器件的有希望材料。采用激光分子束外延 (L MBE)方法制备了ZnO薄膜。在室温下 ,测量了样品的吸收光谱 ,以及不同光泵浦强度下的发射光谱。从光谱图中可以看出该材料有很好的质量。研究了ZnO薄膜的受激发射特性及机理 ;测量了发射光强与泵浦光强之间的关系 ;比较了较高激发密度下的受激发射、自发发射和激光脉冲的时间特性 ,这些都证实了该发射是受激发射。     

Optically and electrically pumped random lasing from ZnO films annealed at different temperatures

We have investigated the optically and electrically pumped random lasing (RL) actions in ZnO films annealed at low and high temperatures respectively. While the optically pumped RL threshold for the ZnO film annealed at a low temperature, which features stronger light scattering and larger optical loss, is far higher than that for the ZnO film annealed at a high temperature, the electrically pumped RL threshold currents for the two ZnO films are almost the same with the electrical pumping scheme of metal-insulator-semiconductor structure. It is suggested that if the lasing region within the ZnO film is narrow enough in the case of electrical pumping, the strong light scattering can substantially alleviate the adverse effect of large optical loss on the onset of RL.     

飞秒抽运随机激光输出波形的可控性研究

本文基于随机激光的时域理论,研究了飞秒脉冲抽运下二维随机激光的辐射特性,并着重讨论了抽运脉冲的峰值强度、脉宽和脉冲波形对辐射光时域波形的影响.结果表明, 辐射光的时域波形强烈依赖于抽运光脉冲的参数,通过调整抽运方式可以控制辐射光的输出波形.数值模拟结果为研究随机激光输出波形的可控性技术提供了理论依据. 关键词： 激光物理 随机激光器 飞秒抽运 脉冲波形     

Optical pumping of the electronic and nuclear spin of single charge-tunable quantum dots

We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the net charge from positive to neutral to negative with a charge-tunable heterostructure. Negative photoluminescence polarization memory is enhanced by optical pumping of ground state electron spins, which we prove with the first measurements of the Hanle effect on an individual quantum dot. We use the Overhauser effect in a high longitudinal magnetic field to demonstrate efficient optical pumping of nuclear spins for all three charge states of the quantum dot.     

染料掺杂聚合物薄膜中金纳米颗粒增强的随机激光

基于金属纳米结构而获得随机激光的增强,其独特的性质及其潜在的应用价值具有重要的研究意义,在表面增强荧光、光学开关器件、表面等离子激元激光等方面实现了较多应用。报道一种快捷有效的制备纳米颗粒的手段并基于该纳米颗粒结构分析了染料掺杂聚合物薄膜涂覆的随机激光现象和规律。利用离子溅射沉积和高温热处理在石英基底上制备了Au纳米颗粒,改变溅射时间Au纳米颗粒的尺寸发生可控变化,该方法便捷、工艺简单。研究采用40,80和120 s三种不同的时间进行Au膜溅射并在650 ℃下高温处理,得到粒径尺寸不同的Au纳米颗粒,随着溅射时间延长Au纳米颗粒的尺寸逐渐变大。通过涂覆有机荧光染料DCJTB掺杂的PMMA聚合物薄膜构建光致激射系统,利用纳秒脉冲激光对样品进行激发,得到随机激光并研究其出射光强度和阈值的变化规律特征。40,80和120 s三种溅射时间下所得Au纳米颗粒的平均粒径尺寸分别为230,250和390 nm,在532 nm激光激发下产生随机激光的阈值分别为20.5,17.5和12.5 μJ·pulse-1。Au纳米颗粒尺寸越大、粒子间距越小时,光子散射的平均自由程越短,光在金属颗粒之间可以多次有效散射,从而显著提高散射效率,产生较低阈值的激光发射;Au纳米颗粒的吸收峰与染料的荧光峰恰好匹配时,将会显著增强染料的荧光效应,激发更多染料分子发生能级跃迁,增加光子态密度,获得峰值更高、阈值更低的激射现象;泵浦光不破坏染料分子的情况下,可以多次循环泵浦获得激光,染料分子的发光效率随着多次激发略有降低,有助于随机激光器件的研究开发。实验研究结果与理论分析相一致,进一步明确了Au纳米颗粒对光子散射和等离子共振对光吸收增强的随机激光发射机理。该研究以Au纳米结构对光子的强散射效应为增益,通过理论分析和实验测量获得随机激光,为实现高效率、低阈值的随机激光研究提供了一种便捷的技术手段,有望促进随机激光器件的开发和应用。     

Holographic Image Denoising using Random Laser Illumination

In holographic applications, coherent lasers are indispensable source of illumination. Despite high intensity from coherent light sources, they fail in full-field image projection and illustrate speckle images due to high spatial coherence. This article demonstrates speckle-free high contrast computer-generated holographic image projection upon illumination with a perovskite–polystyrene 10 wt%-based random laser. Solvent-engineered efficient and durable perovskite and perovskite–polystyrene 10 wt%-based random lasers are fabricated. Optical characterizations are elucidated and controlled coherence random lasing operation is achieved under room temperature upon addition of polystyrene concentration 10 wt% on perovskite thin film. The addition of 10 wt% polystyrene concentration results in a low far-field divergence angle of ≈10⁰. The controlled coherence in random lasers is necessary to produce a stable interference pattern and to retain the depth of field in holograms. Additionally, the holographic image projection using random lasers reduces diffraction noise, and exhibits high spatial resolution with full-field imaging. Moreover, this study is clear evidence of an effective strategy to achieve high-performance, indigenous designed-controlled coherence in disordered random lasing media and its application to novel holographic image projection.     

Selective optical doping to predict the performance and reveal the origin of photocurrent peaks in quantum dots-in-a-well infrared photodetectors

Resonant optical pumping across the band gap was used as artificial doping in InAs/In_0.15Ga_0.85As/GaAs quantum dots-in-a-well infrared photodetectors. Through efficient filling of the quantum dot energy levels by simultaneous optical pumping into the ground states and the excited states of the quantum dots, the response was increased by a factor of 10. Low temperature photocurrent peaks observed at 120 and 148 meV were identified as intersubband transitions emanating from the quantum dot ground state and the quantum dot excited state, respectively by a selective increase of the electron population in the different quantum dot energy levels.     

Electronic properties of A<Subscript>2</Subscript>B<Subscript>6</Subscript> quantum dots incorporated into Langmuir–Blodgett films

An experimental and theoretical study is performed for features of the electronic spectrum of CdSe/CdS/ZnS quantum dots incorporated into Langmuir–Blodgett films. Analysis of the investigated samples assesses the state of the first three levels of the electron spectrum for a quantum object. Good qualitative and quantitative agreement is achieved between the experimental results and theoretical estimates. It is shown that the mechanism of the observed field emission current through a quantum dot is described satisfactorily by the Morgulis–Stratton theory under the considered experimental conditions.     

Second-Order Correlation Function of the Photon Emission from a Single Quantum Dot

The photon correlation of photon emission from a single quantum dot with cw excitation and pulsed excitation is investigated in details. To calculate the second-order correlation function for optical pumping, we deduce rate equations with a simplified two-level model under cw excitation and present the master equation approach in the interaction picture to the study of evolution of a three-level system under pulsed excitation. In addition, we report photon correlation measurements on a single self-assembled In0.5Ga0.5As quantum dot, which show strong antibunching behaviour under both the conditions of cw and pulsed excitations. The calculated results are in agreement with the experimental measurements.     

Quantum wire lasers with high uniformity formed by cleaved-edge overgrowth with growth-interrupt anneal

High-quality T-shaped quantum wire lasers are fabricated by cleaved-edge overgrowth with the molecular beam epitaxy on the interface improved by a growth-interrupt high-temperature anneal. Micro-photoluminescence (PL) and PL excitation spectroscopy reveals unprecedented high quality of the wires, and structures of one-dimensional (1D) free excitons and 1D continuum states. At high pumping levels, PL evolves from a sharp free exciton peak via a biexciton peak to a red-shifted broad band. Lasing has been achieved with low lasing threshold. The lasing energy is on the red-shifted broad band and is about 5 meV below the free exciton. The observed shift excludes free excitons in lasing, and suggests contribution of highly Coulomb-correlated electron-hole plasma.     

Theoretical investigation on temporal properties of random lasers pumped by femtosecond-lasing pulses

Pulsing random lasing property has been investigated in both one- and two-dimensional random medium by numerically solving Maxwell’s equations and rate equations in which the pumping rate is described by a time function with duration of 10s or 100s of femtoseconds. The peak intensity, width and delay time of a random lasing pulse are traced with the variation of the peak intensity, duration, shape and numbers of a pumping pulse. Results show that the behavior of random lasing depends strongly on the pumping process, some of which are in agreement with previously reported experiments pumped by femtosecond-lasing pulses. The present work enriches the knowledge about random lasers, especially in temporal regime, and could offer more guidance for relevant experiments.     

微纳加工技术在光电子领域的应用

纳米光电子器件正在成为下一代光电子器件的核心。文章介绍了电子束光刻和电感耦合等离子体刻蚀为代表的徽纳加工技术在光电子学器件中的应用。主要包括量子点激光器、量子点THz探测器和光子晶体器件。     

单量子点微腔激光器的研究

研究一个三能级量子点耦合到单模光学腔组成的系统,该单量子点激光器的泵浦阈值较小,激光能较快地达到稳定输出,当量子点和腔模耦合强度增强时,其泵浦阈值更小,激光达到稳定输出的速度更快。