微腔中单量子点的激光输出特性研究

研究一个四能级量子点耦合到单模光学腔中的量子系统,利用系统的主方程作数值模拟计算微腔中单量子点的激光输出强度随非相干泵浦的变化关系.结果显示量子点在泵浦作用下激光的输出有一个阈值;且量子点和腔模耦合强度增强时,产生激光的阈值明显减小,输出激光的峰值却增大.当泵浦作用继续增强到一定程度,因激光能级间的相干性被过强的非相干泵浦所破坏,单量子点激光输出变为零----出现了淬灭现象.     

基于sol-gel法制备掺铒微腔激光器及其光学特性

用sol-gel法加工掺铒微环芯腔,得到品质因数高、模式体积小、非线性阈值低等优良光学特性的掺铒微环芯腔激光器.在精密三维调节-二维监控实验平台上对掺铒微环芯腔进行光纤锥倏逝场近场耦合实验.通过对耦合程度和泵浦源激光输入功率的调节,得微环芯腔的品质因数Q超过107.当泵浦源激光波长为1 444.44nm时,微环芯腔输出波长为1 450.54nm的激光,最大输出功率为3.00μW,泵浦源输入功率的最低阈值为10.5mW.     

量子点腔非谐振耦合系统纯退相干的特性及应用

采用非相干泵浦、受激辐射和纯退相干的量子主方程研究了量子点腔耦合系统,得出腔与量子点发射光谱解析解.理论分析显示,在非谐振耦合系统中纯退相干能使腔发射谱产生明显的移位效应,从而可以解释“非谐振耦合腔有效发射”效应.为了进一步研究纯退相干在量子点腔耦合系统上的应用,引入了系统有效耦合率和单光子源效率,并通过比较有效耦合率与腔耗散定义出好腔与坏腔机制.选取两组依据实验数据作为参量,在共振与失谐时研究了纯退相干对系统有效耦合率和单光子源效率的影响.结果表明:纯退相干可提高失谐系统有效耦合率与单光子源效率,从而可能使坏腔转变为好腔|两组参量中有较大耦合效率一组在一定范围内满足好腔机制,其单光子源效率明显优于另一组.在非谐振耦合系统比较了好腔机制与坏腔机制的激光,好腔机制是实现单量子点激光的必要条件|由于非谐振耦合系统Fano因子无最大值出现,从而该系统可能无激光阈值.     

二次谐波过程反射场的纠缠特性研究

本文从运动方程出发分析了三模共振条件下Ⅱ类相位匹配倍频过程中腔反射的泵浦场非经典特性.分别讨论了阈值以上、阈值以下两种情况下的稳态解.在此基础上分析了反射基频光正交分量的量子起伏特性,并结合实验参数计算了反射泵浦场两个垂直偏振模的量子纠缠特性,讨论了纠缠度与输出耦合、腔内损耗等参量的关系.     

基于光纤光栅谐振腔的掺镱全光纤激光器设计(英文)

采用数值分析方法分析了光纤长度、后腔镜反射率等因素对激光器输出阈值泵浦功率、输出功率的影响,为全光纤激光器的优化设计提供了理论基础.在设计过程中采用光纤光栅作为光纤激光器的反馈与选频腔镜,通过锥度光纤实现了泵浦模块与掺镱双包层光纤之间的低损耗连接以及高效率的泵浦激光功率传输,成功研制了具备稳定窄化线宽激光输出的掺镱全光纤激光器.实验得到了波长峰值在1 082 .50 nm,谱线宽度0 .113 nm,最大输出功率8 .5 W,泵浦阈值功率0 .8 W,斜率效率为70 .8 %的稳定激光输出.     

微腔中单量子点的受激辐射行为

研究了微腔中单模光场与一个三能级量子点相互作用系统.利用系统主方程作数值模拟计算微腔中单量子点的净受激辐射率随量子点和腔模耦合强度的变化,同时研究激光能级间衰减率γ23对净受激辐射率的影响.发现净受激辐射率随泵浦强度增大而呈现较快趋于饱和的曲线,这些饱和曲线随着耦合强度的增加又较快地趋于一个极值.而激光能级间衰减率γ23的增大使该激光的净受激辐射率的曲线组表现出相反的规律.     

DH—LDA泵浦Nd：YAG激光器腔内倍频

用国产双异质结半导体激光列阵(DH-LDA泵浦Nd:YAG激光器进行腔内倍频,得到了0.6mW的535nm激光输出,倍频效率为2%;进行了不同脉宽,不同功率的高重复率泵浦实验,利用位相延迟匹配技术,得到了稳定的信频激光输出.分析计算了泵浦阈值,与实验结果基本一致.     

用于飞秒紫外激光产生的LD泵浦高效Nd∶YVO_4绿光激光器研究

利用简单的折叠腔 ,腔内不含任何其它附加光学元件 ,LD双端泵浦 Nd∶YVO4 ,KTP腔内倍频绿光激光器实现了低阈值、高效率的 TEM0 0 模稳定激光输出 .最高绿光输出功率可达到 3 .3 W,光 -光转换效率为 1 6.2 % .     

太阳光泵浦激光器侧面泵浦效率的提高

太阳光泵浦激光器直接利用太阳光作为泵浦源,实现了太阳光能量到激光能量的直接转化。设计了分腔水冷型金属锥形泵浦腔,以直径8mm,长115mm的Nd:YAG晶体棒作为激光工作物质,用有效面积1.03m2菲涅尔透镜会聚太阳光,实验获得了23.7 W的稳定激光输出,斜效率为7.87%。通过对比实验,改进后的分腔水冷型太阳光泵浦激光器较原有锥形腔激光器有55.92%的激光输出功率提升。分别从侧面泵浦光在冷却水中的吸收损耗以及其耦合效率等方面对新型腔体结构进行了分析,证实了分腔水冷型腔体结构对侧面泵浦效率的提高,并提出了陶瓷漫反射材质的分腔水冷型激光腔的设计。     

长波段半导体激光泵浦光纤激光器实现2 kW功率输出

半导体激光（LD）泵浦的高功率光纤激光器具有效率高、体积小、重量轻、稳定性好等优点,在工业加工等诸多领域都有着广泛的应用。为了提高泵浦光吸收率,传统光纤激光器常用915 nm和976 nm波段的LD作为激光的泵浦源。在该类LD泵浦的光纤激光器中,由于量子亏损和泵浦吸收系数相对较高,光纤激光器的热致模式不稳定（TMI）阈值相对较低。为了提高量子效率和潜在的TMI阈值,提出采用大于1 010 nm波段的LD直接泵浦光纤激光器,产生高量子效率激光。搭建了振荡放大一体化的全光纤激光器,采用总泵浦功率为2.56 kW的1 010 nm波段LD泵浦,首次获得输出功率2.05 kW、光束质量M2约1.7的激光。后续将通过进一步增大泵浦功率、优化光纤特性以实现更高功率、更优光束质量的光纤激光输出。     

A review of external cavity-coupled quantum dot lasers

Since the external cavity quantum dot laser was first demonstrated, the performances have been improved in terms of operation temperature, output power, pulse generator and tuneability based on the naturally size fluctuation of quantum dot. Nowadays, the external cavity quantum dot sources have been successfully used in different absorption spectroscope techniques, in industry, biomedical and research. In this paper we reviewed the recent developments of quantum dot lasers operated in a grating-coupled external cavity system where a single frequency and wide tunable wavelength range were easily obtained by adjusting the grating angle. In all cases, we mainly stressed the significant progresses in understanding of basic optical and electronic properties to enable the importance steps forward. The prospects for further progress directed towards stability, mode-hoping-free tuning range, miniaturization and integration of the external cavity quantum dot lasers also reviewed.     

硅基III-V族量子点激光器的发展现状和前景

本文简要综述了硅基III-V族量子点激光器的研究进展. 在介绍了量子点激光器的优势和发展后, 重点介绍了近年来硅基、锗基III-V族量子点材料生长上的突破性进展及所带来的器件性能的大幅提高, 如实现了锗基和硅基1.3 μm InAs/GaAs量子点激光器的室温激射, 锗基量子点激光器的阈值电流低至55.2 A/cm²并可达60 ℃以上的连续激射, 通过锗硅虚拟衬底, 在硅基上实现了30 ℃下以16.6 mW的输出功率达到4600 h的激光寿命, 这些突破性的进展为硅基光电子集成打开了新的大门.     

位移效应对量子点激光器的性能影响

从理论上分析了位移效应对量子点激光器的影响, 并推导了量子点激光器阈值电流相对变化、输出功率相对变化的位移损伤公式. 对量子点激光器进行了中子辐照实验, 观察到了阈值电流的增加. 结合实验结果确定了量子点载流子非辐射复合速率的损伤因子的表达式, 公式计算结果与实验结果符合较好, 证明了模型的正确性. 得到的公式可用于预测量子点激光器在辐射环境下的性能变化, 有着较大实际应用价值. 关键词： 量子点激光器 位移损伤 缺陷     

Observation of unique photon statistics of single artificial atom laser

We demonstrate a photonic crystal nanocavity laser essentially driven by a self-assembled InAs/GaAs single quantum dot gain and its unique photon statistics. Gain tuning measurements and photon correlation measurements indicated that a single quantum dot plays a substantial role in the laser oscillation. Photon correlation measurements showed a distinct transition from anti-bunching to Poissonian via photon bunching around the threshold with the increase of the excitation power. Numerical simulations, including contributions of other light sources besides a single quantum dot, indicated that the photon bunching feature around the threshold can be enhanced by the interfusion of incoherent photons into the cavity mode.     

Influence of a single quantum dot state on the characteristics of a microdisk laser

We report a quantum dot microcavity laser with a cw sub-microW lasing threshold, where a significant reduction of the lasing threshold is observed when a single quantum dot (QD) state is aligned with a cavity mode. The quality factor exceeds 15,000 before the system lases. When no QD states are resonant, below threshold the cavity mode initially degrades with increasing pump power, after which saturation occurs and then the cavity mode recovers. We associate the initial cavity mode spoiling with QD state broadening that occurs with increasing pump power.     

High Power 980 nm InGaAs/AlGaAs Strained Quantum Well Lasers

1lntroductionCarhan,aIVcolutnnelement,hasmanyadvantagesinGaAsAlGaAsmaterials,suchasIowdiffudricoefficient,relativelowactivateenergyabout26meV,highincmptiOnconcentratboandhighm0bilityduetothelowcomensaterate.SocarbonhasbeenwidelyusedinGaAsAlGaAsheter0unctionbipoartransistors(HBT),modulationdoPingfieldeffecttransistors(m),tunneldiodes,iInPurityinducedlayerdisorderinglaserdiodeS,anddistributedBraggreflectors(DBRs)intheverticalcavitysurfaceedrittinglasers(VCSEL).Ingeneral,therearesever…     

High Power 980 nm InGaAs/AlGaAs Strained Quantum Well Lasers

By low-pressure metalorganic chemical vapor deposition (LP-MOCVD) system,InGaAs/AlGaAs graded-index separate-confinement heterostructure strained quantum well lasers are grown with carbon doped the upper cladding layer and the capping layer. Carbon tetracholride (CCl4) is used as the carbon source. 100 μm oxide stripe lasers are fabricated,and the laser output power per facet (uncoated) reaches 1.2 W with 2A injection current under the room temperature continuous wave (CW) operation. The threshold current density is 150 A/cm2 with 1000 μm cavity length. The slope efficiency per facet reaches 0.53W/A,and the total external differential quantum efficiency is above 85%. The relations between the threshold current densities,the differential quantum efficiency and the cavity length are studied.     

Trends in microdisk laser research and linear optical modelling

Research into microdisk lasers demonstrates new achievements both in the technology and in the associated physical effects and applications. Melting and rounding of the disk edge boosts the Q-factors due to improved surface smoothness. In-plane cavity shape is widely used as a design instrument. Optimal shaping of pumped area lowers the threshold power. Photonic molecules made of several microdisks as “photonic atoms” show lasing at several closely spaced frequencies. A microdisk with a single quantum dot as an active region is considered as the most promising system for realisation of a single photon emitter necessary for quantum computing. These new effects and devices can be simulated with accurate numerical techniques, developed recently for “warm-cavity” linear modelling, that are able to bring a new vision of the physics of lasing.