中间层Re的加入对覆膜钡钨阴极性能的改善

研究了一种新型的覆膜钡钨阴极——双层膜(Os-W/Re膜)钡钨阴极.对这种新型阴极的发射性能进行了测试，重点对其老炼前后表面薄膜的微观形貌进行了分析，表明中间层Re膜的加入使覆膜钡钨阴极的性能得到了改善.通过对Os-W双元合金膜钡钨阴极和Os-W/Re双层膜钡钨阴极发射特性的比较，发现Os-W/Re双层膜阴极的直流发射性能好于Os-W合金膜阴极.对两种阴极激活后发射表面的X射线光电子能谱分析表明，Os-W/Re双层膜阴极激活后表面形成的三元合金膜是其发射特性优于Os-W合金膜阴极的主要原因.应用扫描电子显微镜分析比较两种阴极激活老炼后的表面状态，结果表明：Os-W合金膜阴极在老炼一段时间后，其表面薄膜出现开裂，这会导致阴极发射均匀性下降；而Os-W/Re双层膜阴极在同样老炼条件下，发射表面薄膜均匀并保持完整，从而确保覆膜钡钨阴极发射均匀性和工作可靠性. 关键词： 双层膜钡钨阴极 Os-W/Re膜 Os-W膜 薄膜开裂     

Ag-Au合金/SiO$lt;sub$gt;2$lt;/sub$gt;复合薄膜的制备与表征

以AgNO₃,HAuCl₄和正硅酸乙酯为主要原料,利用溶胶-凝胶法和旋涂技术,通过热处理和紫外光辐射还原得到了不同n_Ag/n_Au（1∶0,2∶1,1∶2,0∶1）的Ag-Au合金/SiO₂复合薄膜.从扫描电子显微镜和X射线衍射谱的结果可以看出得到的薄膜均匀性好,复合薄膜中合金颗粒的尺寸为10 nm左右.利用紫外-可见分光光谱仪研究了复合薄膜的光吸收性能,结果表明,随着n_Ag/n_Au的降低,吸收峰的位置也由最初的Ag纳米粒子的等离子共振吸收峰430 nm附近,逐渐红移到Au纳米粒子的等离子共振吸收峰605和880 nm附近.从光吸收谱可以看出,n_Ag∶n_Au＝2∶1和1∶2的两个样品分别在515,730 nm附近和550,730 nm附近出现表面等离子共振吸收峰.这表明Au-Ag合金固溶体的形成. 关键词： 2')" href="#">Ag-Au合金/SiO₂ 紫外辐射 光吸收性能     

薄膜后栅型SnO_2场发射显示器的制备及性能研究

利用光刻、阳极氧化和剥离技术在玻璃基底制备薄膜后栅型场发射阵列,采用丝网印刷技术将一维SnO2纳米发射材料转移至后栅结构的阴极电极上,借助光学显微镜和扫描电镜观测薄膜后栅型场发射阴极阵列,利用ANSYS软件模拟了不同条件下阴极电极附近电子运动轨迹.结果表明,一维SnO2纳米线在阴极电极衬底上分布均匀,电子束斑随着阳压的...     

Ag-Au合金/SiO2复合薄膜的制备与表征

以AgNO3,HAuCl4和正硅酸乙酯为主要原料,利用溶胶-凝胶法和旋涂技术,通过热处理和紫外光辐射还原得到了不同nAg/nAu(1∶0,2∶1,1∶2,0∶1)的Ag-Au合金/SiO2复合薄膜.从扫描电子显微镜和X射线衍射谱的结果可以看出得到的薄膜均匀性好,复合薄膜中合金颗粒的尺寸为10 nm左右.利用紫外-可见分光光谱仪研究了复合薄膜的光吸收性能,结果表明,随着nAg/nAu的降低,吸收峰的位置也由最初的Ag纳米粒子的等离子共振吸收峰430 nm附近,逐渐红移到Au纳米粒子的等离子共振吸收峰605和880 nm附近.从光吸收谱可以看出,nAg∶nAu＝2∶1和1∶2的两个样品分别在515,730 nm附近和550,730 nm附近出现表面等离子共振吸收峰.这表明Au-Ag合金固溶体的形成.     

螺旋波等离子体化学气相沉积纳米硅薄膜的光学发射谱研究

利用光学发射谱技术对螺旋波等离子体化学气相沉积纳米硅薄膜的等离子体内活性粒子的光发射特征进行了原位测量.研究了薄膜沉积过程中各实验参量对活性基团SiH^*， H^β以及H^α的发射谱强度的影响.实验结果表明，静态磁场的加入可显著提高反应气体 的解离效率 ；适当的氢稀释可以提高氢活性粒子的浓度，而过高的氢稀释比将使含硅活性基团浓度显著 减小；提高射频馈入功率整体上可以使各活性粒子的浓度增加，并有利于提高到达衬底表面 氢活性粒子的相对比例.结合螺旋波等离子体色散关系和等离子体特点对以上结果进行了分 析.该结果为螺旋波等离子体沉积纳米硅薄膜过程的理解及制备工艺参数的调整提供了基础 数据. 关键词： 光学发射谱 螺旋波等离子体化学气相沉积 纳米硅薄膜     

白碳纳米晶薄膜及其场致电子发射特性

利用微波等离子体化学气相沉积方法,以甲烷、氢混合气体为反应气体,具有钛镀层的玻璃作为衬底,制备了具有sp¹杂化结构的白碳纳米晶薄膜。利用X射线衍射、俄歇电子能谱,以及扫描电子显微镜对薄膜结构进行了表征。以白碳纳米晶薄膜为阴极,以镀有ITO透明导电薄膜玻璃为阳极,采用二极管结构,测试了白碳纳米晶薄膜的场致电子发射特性。开启电场为2.5 V/μm,在电场为5 V/μm时的电流密度为200μA/cm²。对白碳纳米晶薄膜生长机理,以及其场致电子发射机制进行了讨论。     

印刷制作的双半导体底层碳纳米管薄膜阴极的稳定电子发射

应用带保护气进行烧结的方法,制作了一种双半导体底层碳纳米管薄膜阴极.利用烧结的银浆形成条形银电极,在条形银电极表面制作了具有相同宽度且平行排列的ZnO掺杂底层和TiO2掺杂底层,在掺杂底层上面制备了碳纳米管膜层.由于保护气的防氧化屏蔽,碳纳米管膜层中的碳纳米管未受损害,ZnO粒子和TiO2粒子也在烧结过程中得到了很好地保护,双半导体底层碳纳米管薄膜阴极获得更优的电子发射特性,且电子发射稳定性也得到有效增强.与普通条形银电极碳纳米管阴极相比,双半导体底层碳纳米管薄膜阴极能够将开启电场从2.09V/μm降低到1.91V/μm,将最大电子发射电流从1 653.5μA提高到2 672.9μA.在2.69V/μm电场作用下,普通条形银电极碳纳米管阴极的电子发射电流仅为421.1μA,而双半导体底层碳纳米管薄膜阴极的电子发射电流能够达到723.5μA.从发射电流稳定性实验曲线可以看出,双半导体底层碳纳米管薄膜阴极实现了稳定的电子发射,表明ZnO掺杂底层和TiO2掺杂底层能够应用于真空环境.利用数码相机获得了具有良好质量的发射图像,验证了双半导体底层碳纳米管薄膜阴极制作的可行性和适用性.     

Ag/TiO2纳米材料的制备和光致变色性能研究

 采用光催化还原法在不同温度热处理的TiO2薄膜表面沉积Ag纳米颗粒,制备了Ag/TiO2纳米薄膜材料。通过UV-Vis吸收光谱表征对比了不同温度热处理的TiO2对Ag粒子光催化沉积的影响,发现500℃退火处理TiO2薄膜较利于Ag纳米粒子的光催化沉积;在650 nm红色激光照射下,500℃退火处理的Ag/TiO2样品具有明显的光致变色现象,对此变色过程中涉及的机理进行了讨论,且发现随着Ag纳米颗粒光催化沉积时间的增长,Ag/TiO2薄膜光致变色的响应速率提高,但Ag纳米颗粒过多会抑制Ag/TiO2薄膜的变色响应速率。     

Ag-BaO纳米薄膜红、蓝紫光波段光致荧光现象研究(Ⅰ)

金属纳米粒子/介质复合薄膜因其优良的光电特性和超快响应而成为应用背景很强的光电功能薄膜-采用真空沉积的方法制得了Ag-BaO纳米薄膜,测试到其在室温条件下的红光和蓝紫光波段的光致荧光光谱,认为Ag-BaO纳米薄膜的荧光发射主要来自于Ag纳米粒子的贡献-与该种材料的紫外-可见光吸收谱相比较,分析了Ag-BaO纳米薄膜材料不同可见光波段的荧光产生机理- 关键词：     

沉积速率和氧分压对HfO2薄膜残余应力的影响

采用ZYGO MarkIII-GPI数字波面干涉仪对以K9玻璃为基底的电子束蒸发方法制备的HfO₂薄膜中的残余应力进行了研究,讨论了沉积速率、氧分压这两种工艺参量对HfO₂薄膜残余应力的影响.实验结果表明：在所有的工艺条件下,薄膜的残余应力均为张应力;随着沉积速率的升高,氧分压的减小,薄膜的堆积密度逐渐增大,而残余应力呈减小趋势.同时用X射线衍射技术测量分析了不同工艺条件下HfO₂薄膜的晶体结构,探讨了HfO₂薄膜晶体 关键词： 残余应力 2薄膜')" href="#">HfO₂薄膜 沉积速率 氧分压     

微波电真空器件用热阴极的温度测量

利用红外测温仪、光学测温仪、热电偶测温仪(铂铑-铂)对微波电真空器件用浸渍阴极表面、覆膜阴极表面、阴极侧面（钼筒）进行了温度对比测试研究。结果表明:采用红外测温仪和光学测温仪测试浸渍阴极表面的温度与采用热电偶测温仪测试的温度相差不大,而覆膜阴极却相差约50 ℃;采用红外测温仪和光学测温仪测试阴极侧面（钼筒）的温度相差不大,都低于热电偶测温仪测试的温度约60 ℃,这说明红外和光学测试温度值低于阴极的实际温度（热电偶测量值）。由于在阴极表面出现了物理、化学变化,红外测温仪和光学测温仪测试的阴极表面温度值在1150 ℃左右加热100 min内增加约30 ℃。分析认为这些差异主要是因为覆膜阴极的表面与浸渍阴极的表面及阴极侧面（钼筒）的发射系数不同造成的,当然测试结果也会随着这些因素的变化而有一定的变化。     

Energy distributions of electrons emitted from tungsten tips covered by diamond-like films

The energy distribution of electrons emitted from the surface of diamond-like pointed cathodes under the action of a high electric field is reported. Diamond-like coatings are applied on thin tungsten tips by ion-beam evaporation in an ultrahigh vacuum. The structure of the carboniferous films covering the tungsten tips is examined by field-emission microscopy. The stability of the field-emission cathode current is considered, and the Fowler-Nordheim I-V characteristics are presented. Based on the results obtained, a model of field-emission cathode covered by a thin diamond-like coating that explains the energy distributions is suggested.     

Thermal conductivity of PVD TiAlN films using pulsed photothermal reflectance technique

In the present work, we have measured thermal-conductivity of industrial thin film TiAlN with a thickness of around 3 μm. These films are used in machining industry for cutting tools in order to increase their service life. A series of TiAlN coating with a different Al/Ti atomic ratio were deposited on Fe-304 stainless steel (AISI304) substrate by a lateral rotating cathode arc process. The samples were then coated with a 0.8 μm gold layer on top by magnetron sputtering. We present the thermal-conductivity measurement of these samples using pulsed photothermal reflectance (PPR) technique at room temperature. The thermal conductivity of the pure TiN coating is about 11.9 W/mK. A significant decrease in thermal conductivity was found with increasing Al/Ti atomic ratio. A minimum thermal conductivity of about 4.63 W/mK was obtained at the Al/Ti atomic ratio of around 0.72.     

Study on the composition and phase change of BaO/Hf/Mo under high temperature

Hafnium films were deposited onto the molybdenum grids by radio-frequency magnetron sputtering from an Hf target in argon gas. Emission current of Mo grids coated with and without Hf film during the lifetime testing, which were contaminated by active electron-emission substances (i.e. Ba or BaO) from the cathode, were measured using an analogous-diode method. The results show that emission current from the Mo grid coated with Hf film is much less than that from the Mo grid without Hf film. The BaO layer was deposited on Hf/Mo substrates by chemical method in order to simulate the working conditions of the grids contaminated by electron-emission substances from the cathode. The suppression mechanism of electron emission from the Mo grid coated with Hf film is discussed according to the experimental results and the calculation of the reaction free energy.     

电子束蒸发和离子束溅射HfO_2紫外光学薄膜

HfO2薄膜在紫外光学中具有十分重要的地位,不同方法制备的HfO2薄膜特性不同,可以满足不同的实际应用需求。本文分别利用电子束蒸发和离子束溅射方法制备了用于紫外光区域的HfO2薄膜,并对薄膜的材料和光学特性进行了表征与比较。通过对单层HfO2薄膜的实测透射和反射光谱进行数值反演,得到了HfO2薄膜在230～800 nm波段的折射率和消光系数色散曲线,结果表明两种方法制备的HfO2薄膜在250nm的消光系数均小于2×10-3。在此基础上,制备了两种典型的紫外光学薄膜元件(紫外低通滤波器和240nm高反射镜),其光谱性能测试结果表明,两种不同方法制备的器件均具有较好的光学特性。     

Experimental study on Ti N coated racetrack-type ceramic pipe

Ti N film was coated on the internal surface of a racetrack-type ceramic pipe by three different methods:radio-frequency sputtering, DC sputtering and DC magnetron sputtering. The deposition rates of Ti N film under different coating methods were compared. The highest deposition rate was 156 nm/h, which was obtained by magnetron sputtering coating. Based on AFM, SEM and XPS test results, the properties of Ti N film, such as film roughness and surface morphology, were analyzed. Furthermore, the deposition rates were studied with two different cathode types, Ti wires and Ti plate. According to the SEM test results, the deposition rate of Ti N/Ti film was about 800 nm/h with Ti plate cathode by DC magnetron sputtering. Using Ti plate cathode rather than Ti wire cathode can greatly improve the film deposition rate.     

Preparation of cathodes for thin film SOFCs

SOFCs are expected to become competitive devices for electrical power generation, but successful application is dependent on decreasing working temperature from 1000 to 800 °C, without detrimental effects on resistance and on electrode processes. This requires a reduction of the stabilized zirconia electrolyte thickness and an optimization of the electrodes, especially the cathode, where losses are higher. Strontium doped lanthanum manganites are the most common materials tested as cathodes for SOFCs working at high temperature (1000 °C). This cathode material presents high electronic and oxygen-ion conductivities, a thermal expansion coefficient compatible with stabilized zirconia and good catalytic activity. For thin film SOFC devices working at intermediate temperatures (less than 800°C), we have studied the optimization of this type of cathode. Strontium doped lanthanum manganite has been deposited on yttria stabilized zirconia electrolyte substrates by spray-pyrolysis and by RF sputtering. The electrode performances depend strongly on cathode microstructure, influenced by processing conditions. With spray-pyrolysis processes, large porosity is expected. This is important for the supply of oxygen, via O₂ molecules through the pores to the triple phase boundaries, where the gas, the cathode and the electrolyte are in contact and where oxygen reduction may occur. However, large porosity can have a nefaste effect on electronic conductivity. With RF sputtering, denser films with higher electronic conductivity are obtained. But, in that case, the supply of oxygen occurs via adsorbed O-atoms in a diffusion process through the cathode to the electrolyte. Spraypyrolysis and RF sputtering have been compared relative to electrode properties. Paper presented at the 4th Euroconference on Solid State Ionics, Renvyle, Galway, Ireland, Sept. 13–19, 1997     

Changes in surface chemistry of an Ir---W mixed metal coated cathode during activation

A comparative study has been made between a mixed metal (60% Ir-40%W) coated cathode and a “B” cathode during activation and also in their respective steady states. The rate limiting factor in the activation of the coated cathode is the oxidation of the initial Ba type surface to a BaO type surface. Since on the “B” cathode Ba and O emerge together, its activation is faster than the coated cathode. In the steady state of operation, both cathodes exhibit a surface near BaO stoichiometry which is the optimum composition for the minimum work function. This work function is about 0.2 eV lower on the coated cathode than on the “B” cathode. An accelerated life test at 1575 K indicated a gradual decrease of the Ir concentration in the coating.     

溅射Al-C-O/Al太阳选择性吸收涂层

设计计算了以Al为底层的多层Al-C-O的太阳吸收涂层。运用直流磁控溅射制备了这种Al-C-O/Al吸收涂层。理论计算与实验测量的结果基本一致。经真空中烘烤后,涂层的Al-C-O/Al太阳吸收率α≈0.92,室温热发射率ε≈0.04,具有优良的光谱选择性。由于使用单个溅射靶,简化了溅射系统,提高了靶溅射的利用率。 关键词：     

Influence of direct current plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper films

Physical vapor processes using glow plasma discharge are widely employed in microelectronic industry. In particular magnetron sputtering is a major technique employed for the coating of thin films. This paper addresses the influence of direct current (DC) plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper (Cu) thin films coated on silicon substrates. The influence of the sputtering parameters including DC plasma power and argon working gas pressure on the electrical and structural properties of the thin Cu films was investigated by means of surface profilometer, four-point probe and atomic force microscopy.