沉积速率和氧分压对HfO2薄膜残余应力的影响

采用ZYGO MarkIII-GPI数字波面干涉仪对以K9玻璃为基底的电子束蒸发方法制备的HfO₂薄膜中的残余应力进行了研究，讨论了沉积速率、氧分压这两种工艺参量对HfO₂薄膜残余应力的影响.实验结果表明：在所有的工艺条件下，薄膜的残余应力均为张应力；随着沉积速率的升高，氧分压的减小，薄膜的堆积密度逐渐增大，而残余应力呈减小趋势.同时用X射线衍射技术测量分析了不同工艺条件下HfO₂薄膜的晶体结构，探讨了HfO₂薄膜晶体 关键词： 残余应力 2薄膜')" href="#">HfO₂薄膜 沉积速率 氧分压

Influences of deposition rate and oxygen partial pressure on residual stress of HfO2 films

HfO₂ films were prepared by electron beam evaporation on K9 glass. The residual stresse was measured by viewing the substrate deflection using ZYGO interferometer. The influences of deposition rate and oxygen partial pressure on the residual stress were studied. The results show that all the residual stresses are tensile stresses. The packing density of films increases while the residual stress decreases with the increasing deposition rates and the decreasing oxygen partial pressure. The microstructure of the HfO₂ films was inspected by X-ray diffraction （XRD）. The relationship between the stress and the microstructure was also discussed.