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1.
以Ba为填充原子 ,在x =0— 3 0 ,y=0— 0 7的组成范围内 ,用多步固相反应法合成了单相BayFexCo4 -xSb12 化合物 .用Rietveld方法对结构的精确化结果表明 :合成的BayFexCo4 -xSb12 化合物具有填充式skutterudite结构 ,Ba的热振动参数 (B)比Sb,Fe/Co的大 ,表明在BayFexCo4 -xSb12 化合物中Ba具有扰动效果 .晶格常量随Ba填充分数及Fe含量的增大而增大 .在BayFexCo4 -xSb12 化合物的Sb的 2 0面体空洞中 ,Ba的最大填充分数随Fe含量的增大而增大 ,并明显地大于Ce的填充分数 .当Fe含量从 0增大到 4 0时 ,Ba的最大填充分数从 0 35增大到 1 0左右  相似文献   

2.
p型BayFexCo4-xSb12化合物的热电性能   总被引:2,自引:1,他引:1       下载免费PDF全文
以2+价的Ba作为填充原子,在x=1.0—1.6,y=0—0.63的组成范围内,系统地研究了Ba填充分数及Fe含量对p型BayFexCo4-xSb12化合物电性能及热性能的影响,探讨了填充原子的氧化价对电性能的影响规律,优化了p型BayFexCo4-xSb12化合物的组成和热电性能,对于富Co组成的Ba0.27FeCo3Sb12试样,本研究得到了0.9最大无量纲热电性能指数(ZT). 关键词: 填充分数 载流子浓度 电导率 赛贝克系数 晶格热导率  相似文献   

3.
n型BayNixCo4-xSb12化合物的热电性能   总被引:12,自引:7,他引:5       下载免费PDF全文
系统地研究了Ba填充分数及Ni含量对n型BayNixCo4-xSb12(x=0—0.1,y=0—0.4)化合物热性能及电性能的影响规律.n型BayNixCo4-xSb12的热导率随Ba填充分数的增加而显著下降,当Ba填充分数为0.3时,热导率随Ni含量的增加而降低,在x=0.05时,热导率达到最小值,晶格热导率随Ni含量的增加单调降低.电子浓度和电导率随Ba填充分数及Ni含量的增加而增加,塞贝克系数则随Ba填充分数及Ni含量的增加而减小.对于Ba0.3Ni0.05Co3.95Sb12试样,得到了1.2最大 关键词: n型方钴矿 填充 置换 热电性能  相似文献   

4.
用熔融法合成了单相填充式skutterudite化合物CeyFexCo4 -xSb12 (x =0— 3 0 ,y =0— 0 74) .对Ce的填充范围 ,置换Fe原子对化合物的结构及热电传输特性的影响进行了研究 ,Ce的填充分数随Fe含量的增加而线性增加 ,当Fe含量大约为 3时 ,Ce的填充分数达到 0 74.晶格常量a随Fe含量的增加而增加 ,Ce的填充使晶格常量进一步增加 .当Ce填充分数达到饱和状态时 ,CeyFexCo4 -xSb12 化合物表现为 p型传导 ,霍尔系数RH 随Fe含量的增加而降低 ,空穴浓度 p和电导率σ随Fe含量的增加而增加 ,泽贝克系数α随Fe含量的增加而降低 .当Fe/Co比大约为 1 5 / 2 5时 ,CeyFexCo4 -xSb12 的晶格热导率 (κl)达到最小值 .  相似文献   

5.
用高温熔融法合成了Ca和Ce复合填充的单相p型CamCenFexCo4-xSb12化合物,探索了两种原子复合填充对其热电性能的影响规律.研究结果表明,填充分数相同时,Ca和Ce两种原子复合填充的p型CamCenFexCo4-xSb12化合物的载流子浓度和电导率介于Ca或Ce一种原子单独填充的化合物之间,且随两种原子填充分数m+n的增加而降低;赛贝克系数随两种原子填充总量,尤其是Ce填充分数m的增加以及温度的上升而增加;在相同填充分数时,两种原子复合填充的p型CamCenFexCo4-xSb12化合物的晶格热导率较Ca或Ce一种原子单独填充的化合物的晶格热导率低,当总填充分数m+n为0.3左右,且Ca和Ce的填充量大致相等时,化合物的晶格热导率最低.p型Cao18Ce0.12Fe1.45Co2.55Sb12.21化合物的最大热电性能指数ZT值在750K时达到1.17.  相似文献   

6.
研究了Ce填充分数对富Co组成的填充式skutterudite化合物 :CeyFe1.5Co2 .5Sb12 ( y =0— 0 46 )的热电传输特性的影响 .CeyFe1.5Co2 .5Sb12 有现为p型传导 .霍尔系数RH 随Ce填充分数的增加而增加 ,空穴浓度p和电导率σ随Ce填充分数的增加而减少 .泽贝克系数α随Ce填充分数的增加及温度的上升而增加 ,泽贝克系数的峰值温度随Ce填充量的增加向低温方向偏移 .当Ce填充分数大约为 0 3时晶格热导率κl 达到最小值 ,表明在skutterudite结构中 ,Sb组成的 2 0面空洞的一部分被Ce原子填充时 ,Ce的扰动对声子的散射作用最强 .在 75 0K时 ,富Co组成的Ce0 2 8Fe1.52 Co2 .4 8Sb12 化合物的最大无量纲热电性能指数ZTmax达 1 1.  相似文献   

7.
RyMxC04-xSb12化合物的晶格热导率   总被引:2,自引:0,他引:2       下载免费PDF全文
系统地研究了离子半径不同的Ba,Ce,Y作为填充原子及Fe,M作为置换原子对填充化合物RyMxCo4-xSb12晶格热导率的影响规律.结果表明在skutterudite结构的Sb组成的20面体空洞中,Ba,Ce,Y的填充原子能显著降低其晶格热导率,且晶格热导率降低幅度按Ba,Ce,Y离子半径减小的顺序而增大.Sb组成的20面体空洞部分被Ba,Ce填充时,晶格热导率最小,填充原子的扰动对声子的散射作用最强.在Co位置上Fe和M的置换,能显著地降低RyMxC2o4-xSb12化合物的晶格热导率,与Fe比,M对晶格热导率的影响更强.  相似文献   

8.
罗派峰  唐新峰  李涵  刘桃香 《物理学报》2004,53(9):3234-3238
用多步固相反应法结合熔融法合成了单相的两种原子复合填充的p型方钴矿化合物Ba mCenFeCo3Sb12.并探索了两种原子复合填充对其热电性能的影响规 律,研究结果表明在相 同填充分数时BamCenFeCo3Sb12化合物的电导率介于单原子Bam FeCo3Sb12和CenFeCo3Sb12填 充的化合物之间,随Ba,Ce填充分数的增加,电导率下降;当填充分数相同时,两种原子复 合填充化合物的晶格热导率较单一原子填充化合物的晶格热导率低. 关键词: 方钴矿 双原子填充 电导率 晶格热导率  相似文献   

9.
RyMxCO4-xSb12化合物的晶格热导率   总被引:1,自引:1,他引:0       下载免费PDF全文
系统地研究了离子半径不同的Ba,Ce,Y作为填充原子及Fe,Ni作为置换原子对填充化合物RyMxCO4-xSb12晶格热导率的影响规律.结果表明:在skunemdite结构的sb组成的20面体空洞中,Ba,Ce,Y的填充原子能显著降低其晶格热导率,且晶格热导率降低幅度按Ba,Ce,Y离子半径减小的顺序而增大.Sb组成的20面体空洞部分被Ba,Ce填充时,晶格热导率最小,填充原子的扰动对声子的散射作用最强.在Co位置上Fe和Ni的置换,能显著地降低RyMxCO4-xSb12化合物的晶格热导率,与Fe相比,Ni对晶格热导率的影响更强.  相似文献   

10.
李涵  唐新峰  刘桃香  宋晨  张清杰 《物理学报》2005,54(11):5481-5486
用高温熔融法合成了Ca和Ce复合填充的单相p型CamCenFexCo4-xSb12化合物,探索了两种原子复合填充对其热电性能的影 响规律.研究结果表明,填充分数相同时,Ca和Ce两种原子复合填充的p型CamCe nFexCo4-xSb12化合物的载流子浓度和电 导率介于Ca或Ce一种原子单独填充的化合物之间,且随两种原子填充分数m+n的增加而降低 ;赛贝克系数随两种原子填充总量,尤其是Ce填充分数m的增加以及温度的上升而增加;在 相同填充分数时,两种原子复合填充的p型CamCenFexC o4-xSb12化合物的晶格热导率较Ca或Ce一种原子单独填充的化合物 的晶格热导率低,当总填充分数m+n为0.3左右,且Ca和Ce的填充量大致相等时,化合物的晶 格热导率最低.p型Ca0.18Ce0.12Fe1.45Co2.55Sb12.21化合物的最大热电性能指数ZT值在750K时达到1.17. 关键词: skutterudite化合物 双原子复合填充 合成 热电性能  相似文献   

11.
报道了两个典型掺杂的镍氧化物Nd2 -xSrxNiO4 (x=0 33,1 35 )的低温热导率、电阻率和低场交流磁化率 ,测试温区为 77— 30 0K .在Nd2 -xSrxNiO4 (x=0 33)样品的热导率_温度曲线上在电荷有序转变温度 (TCO)和自旋有序转变温度 (TSO)附近分别观测到反常 ,电荷有序使热导率在TCO 以下有所增加 ,反铁磁自旋有序使热导率在TSO 附近被压制 .在低场交流磁化率_温度曲线上也分别观测到对电荷有序和自旋有序的响应 ,而在其电阻率_温度曲线上仅观测到电荷有序 .作为比较 ,Nd0 6 5Sr1 35NiO4 样品中没有观测到输运性质和磁性质上的反常 .两个样品中声子热导占主导地位 .Nd1 6 7Sr0 33NiO4 样品中电荷有序和自旋有序导致的热导率的反常表明样品中存在强的电荷_声子和自旋_声子相互作用  相似文献   

12.
本文研究了Pr1.27La0.7Ce0.03CuO4和Pr2CuO4单晶的低温热导率行为,在极低温下热导率(κ)随磁场的变化显示出低场下的凹陷和高场下的平台现象.这种现象很可能是顺磁离子散射声子的作用引起的,在Pr2CuO4单晶的比热测量结果中,肖特基峰随磁场的变化关系表明样品中确实含有少量的顺磁离子,并且其零场下基态能级存在劈裂.因此,这些顺磁离子很可能是Pr4+离子.该结果表明铜氧化合物高温超导体中声子与自旋的强烈耦合作用.  相似文献   

13.
We measured the infrared reflectivity of BaFe1.904Ni0.096As2 single crystal from room temperature down to 20 K.Two Drude terms and a Lorentz term well describe the real part of the optical conductivity σ1(ω). We fit the reciprocal of static optical conductivity 1/σ1(0) by the power law ρ(T)=ρ0+ATnwith n=1.6. The "broad" Drude component exhibits an incoherent background with a T-independent scattering rate 1/τb, while the other "narrow" one reveals a T-quadratic scattering rate 1/τn, indicating a hidden Fermi-liquid behavior in BaFe1.904Ni0.096As2 compound.  相似文献   

14.
The layered oxysulfide (LaO)CuS is a wide-gap semiconductor. In general, the wide-gap semiconductor has strong mono-polarity and non-stoichiometry which affect their physical properties. In this study, the relation between the non-stoichiometry of (LaO)CuS and their physical properties has been investigated. Several kinds of non-stoichiometric samples were prepared. In the Cu non-stoichiometry, (LaO)CuS can accommodate the excess Cu in preference to a deficiency. In the La and S non-stoichiometric samples, deficiencies are preferred. The Cu and S non-stoichiometry affects their electrical and emission properties as expected from the valence band structure. It should be noted that the La non-stoichiometry is also quite effective on the band edge emission and the resistivity as well as other non-stoichiometry. These results reveal that not only Cu but also La deficiency is important in controlling the physical properties.  相似文献   

15.
《Current Applied Physics》2020,20(9):1008-1012
Among the intermediate temperature (500–900 K) thermoelectric materials, both the p- and n-type lead telluride (PbTe) compounds have attracted extensive interests. Till date various approaches were adopted to enhance the thermoelectric performance of n-type PbTe-based materials as they show greater potential space for further improvement compared to p-type ones. Herein, a pseudo-ternary n-type (PbTe)0.95-x(Sb2Se3)x(PbS)0.05 system was designed and a large value of ZT = 1.61 at 850 K in case of x = 0.01 was achieved. Two factors are responsible for the improved thermoelectric performance. The incorporation of lead sulfide is the key factor to maintain a high level of power factor above 700 K and the multi-scale hierarchical architectures yield ultra-low thermal conductivity.  相似文献   

16.
Hongxia Liu 《中国物理 B》2022,31(4):47401-047401
The (GeTe)x(AgSbTe2)100-x alloys, also called TAGS-x in short, have long been demonstrated as a promising candidate for thermoelectric applications with successful services as the p-type leg in radioisotope thermoelectric generators for space missions. This largely stems from the complex band structure for a superior electronic performance and strong anharmonicity for a low lattice thermal conductivity. Utilization of the proven strategies including carrier concentration optimization, band and defects engineering, an extraordinary thermoelectric figure of merit, zT, has been achieved in TAGS-based alloys. Here, crystal structure, band structure, microstructure, synthesis techniques and thermoelectric transport properties of TAGS-based alloys, as well as successful strategies for manipulating the thermoelectric performance, are surveyed with opportunities for further advancements. These strategies involved are believed to be in principle applicable for advancing many other thermoelectrics.  相似文献   

17.
Spin crossover compounds are considered to be a viable alternative for creating display, memory and switching devices due to the bistability of their magnetic, optical, mechanical and electrical properties. This Letter presents the study of the dielectric and transport properties of the [Fe(Htrz)2(trz)](BF4) (Htrz = 1H‐1,2,4‐triazole) complex in a wide temperature and frequency range. Our results reveal a singular behavior of the dielectric modulus upon the spin transition in conjunction with the switching of the conductivity between the high spin and low spin states.

  相似文献   


18.
The binding details and electronic properties of the co-crystal composed of poly(diiododiacetylene) and bis(nitrile) oxalamide are investigated using self-consistent field crystal orbital method. It is found that the cooperative effects exist in the stack of bis(nitrile) oxalamides and the hydrogen bond interaction between bis(nitrile) oxalamides plays an important role in the stability of the co-crystal. The calculated band structures show that the co-crystal is a semiconductor and the poly(diiododiacetylene) can be considered as a quasi one-dimensional chain. The calculated mobility for the one-dimensional poly(diiododiacetylene) chain has the order of 103 cm2 V−1 s−1.  相似文献   

19.
The electrical conduction mechanism in polyvinyl chloride (PVC)-polymethyl methacrylate (PMMA) blend film has been studied at various temperatures in the range 313 K to 353 K. The results are presented in the form of I-V characteristics. Analysis has been made in the light of Poole-Frenkel, Fowler-Nordheim, Schottky, log(J) vs. T plots and Arrhenius plots. It is observed that, Schottky-Richardson mechanism is primarily responsible for the observed conduction.   相似文献   

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