七种新的SiC六方多型体

本文提出了用X射线劳埃法鉴定SiC六方多型体类型的方法。在详细地研究了xH类型与基本类型6H,15R和4H的倒易阵点间相互配置关系的基础上,推导出了这些具体关系,这种关系对于xH—6H来说仅有十二种,对于xH—15R仅有三十种,对于xH—4H仅有八种。上述的点间关系表和推求xH类型单位晶胞密堆积层数的公式同样可以普遍适用于以其他X射线照相法鉴定SiC六方多型体类型的工作中。用本文所提出的方法研究了许多实验室升华法制备的SiC单晶体以及部分工业SiC晶体。发现了七种六方SiC新多型体141H,80H,58H,55H,15H,9H和7H。新类型的定间羣为C_3v¹(C3m),六方晶胞c轴参数分别为:355.26?,201.57?,146.14?,138.58?,37.794?,22.676?和17.637?。     

SiC polytypes process affected by Ge predeposition on Si(111) substrates

Structural and optical measurements were performed on silicon carbide (SiC) samples containing several polytypes. The SiC samples investigated were grown on (111) Si substrates by solid source molecular beam epitaxy (SSMBE). Several quantities of Ge were predeposited before the growth procedure. The influence of Ge on the SiC polytypes formation was studied by X-Ray, FTIR and μ-Raman characterizations methods. The spectra of the samples with less than one Ge monolayer exhibit a mixture of 2H, 15R and 3C–SiC polytypes. This mixture is due to the mismatch between the heterostructure layers. We propose that the Ge predeposition in the heterostructure can be used to stabilize and unify the polytypes formation.     

Formation of silicon carbide nanocrystals by high-temperature carbonization of porous silicon

Based on X-ray diffraction analysis, Auger spectroscopy, and Raman scattering, it is shown that carbonization of porous silicon at temperatures of 1200–1300°C results in formation of silicon carbide nanocrystals 5–7 nm in size. The growth of 3C-SiC nanocrystals of fixed size d proceeds as follows. Silicon nanocrystals with d = 3–7 nm pass into the liquid phase, thereby effectively participating in the growth of silicon carbide. After the size of a crystallite has achieved a critical value determined by the equality of its melting point and environmental temperature, the crystallite solidifies and virtually ceases to grow. As a result, a nanocrystalline Si-SiC-amorphous SiC heterostructure is obtained.     

Nonlinear-optical and structural properties of nanocrystalline silicon carbide films

The aim of this study is to investigate the nonlinearity of refraction in nanostructured silicon carbide films depending on their structural features (synthesis conditions for such films, substrate temperature during their deposition, concentration of the crystalline phase in the film, Si/C ratio of atomic concentrations in the film, and size of SiC nanocrystals formed in the film). The corresponding dependences are obtained, as well as the values of nonlinear-optical third-order susceptibility χ⁽³⁾(ω; ω, −ω, ω) for various silicon polytypes (3C, 21R, and 27R) which exceed the value of χ⁽³⁾ in bulk silicon carbide single crystals by four orders of magnitude.     

Optical properties of Si-rich SiO2 films in relation with embedded Si mesoscopic particles

Optical properties of Si-rich SiO₂ films prepared by an RF cosputtering method are discussed. From the infrared and Raman spectroscopy together with the electron microscopy, it is shown that Si mesoscopic particles embedded in solid matrices with the sizes ranging from ˜ 10 nm (nanocrystals) to less than ˜1 nm (clusters) can be obtained by the cosputtering and post-annealing. The absorption and photoluminescence spectra are presented. For our samples, a red luminescence peak analogous to that of porous Si is observed for films containing Si clusters rather than nanocrystals. Raman spectra which evidence the success in the heavy doping of B atoms into Si nanocrystals are also discussed.     

Raman scattering in mosaic silicon carbide films

The Raman spectra of mosaic silicon carbide films grown on silicon substrates by solid-state epitaxy have been studied. The main polytypes forming the film material have been determined. It has been experimentally revealed that the properties of the silicon carbide film are changed after an aluminum nitride film is deposited on the former film. This has been interpreted as a manifestation of good damping properties of the SiC film when layers of other semiconductors are grown on it.     

Phonons in 3C-, 4H-, and 6H-SiC

Silicon carbide epilayers of cubic (3C) and hexagonal (4H and 6H) polytypes were investigated by Auger electron spectroscopy, high-resolution electron energy-loss spectroscopy and Raman spectroscopy to determine the excitation energies of the optical Fuchs-Kliewer surface phonons and their relation to bulk phonon frequencies. The surfaces were treated in a buffered hydrofluoric acid solution. Loss structures attributed to excitation of Fuchs-Kliewer phonons were clearly resolved. Their energies were found at 115.9 ± 1 meV irrespective of the SiC polytype. The experimental data agree with values calculated from the experimental bulk phonon frequencies and tabulated dielectric constants.     

Raman investigation of the electron-phonon interaction in n-type silicon nanocrystals

Silicon nanocrystals prepared in phosphorus-doped (at a concentration of 3.3 × 10²⁰ cm^?3) amorphous silicon films under pulsed irradiation with an excimer laser are studied using Raman spectroscopy and electron microscopy. The experimental data can be interpreted in terms of the Fano interference as a manifestation of the electron-phonon interaction effects in n-type silicon nanocrystals. It is assumed that a strong electron-phonon interaction (as compared to similar interactions in n-type bulk silicon) is due to the weakening of the momentum selection rules in nanocrystals.     

碳化硅多型体连生现象的X射线研究

本工作用劳埃法对分布于三十二炉的四百多个碳化硅单晶进行了类型分布、连生规律和结构完整性等的分析。大量的观察表明,碳化硅片状晶体中的共轴平行连生是一种普遍的现象,二种以上类型的连生占晶体总数的三分之二。文中列出了各种连生类型的统计。系统地报导了SiC晶体连生状况的X射线法实验结果。对各炉晶体所作的类型分布的分析表明,不同的制备条件下影响较大的是颜色和结构完整度。类型分布的规律性并不明显,邻近的晶体类型可以完全相异。用实验数据分析了类型、颜色和蚀坑间的关系。对碳化硅多型体产生的机理作了讨论。     

Strong and weak modes in polytypes of SiC

The concept of an extended Brillouin zone is used to analyze the intensity of phonon modes observed in optical and Raman investigations of different polytypes of silicon carbide. It is shown that the relative intensity of these modes agrees with the magnitude of the splitting of the doublets, which are degenerate in the extended zone. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 3, 247–250 (10 February 1999)     

属特殊结构系列的若干碳化硅多型体的晶体结构

碳化硅(SiC)是典型的层状结构化合物。到目前为止,已发现了150种以上的多型体。作者曾发展了一种特殊的劳厄法可有效地鉴定碳化硅多型体。这种方法,我们发现了85种碳化硅新多型体。为了测定其中一些多型体的结构,拍摄了回摆和魏森堡照相作结构分析,但没有成功。因为这些照相中只有一些基本类型6H,15R和8H的衍射斑点而没有高层多型体的斑点,这是由于新多型体在晶体中含量很少且这些薄晶体多型体处于基本类型6H,8H,15R中间的缘故。本文提出了一种测定碳化硅多型体晶体结构的劳厄法。提出了计算劳厄斑点衍射强度的方法。对结构系列[(33)_m32]₃,[(33)_m34]₃,[(22)_m23]₃和[(44)_m43]₃多型体的结构因子F_hkl的计算方法作了简化。利用这种方法对9种碳化硅新多型体的晶体结构作了测定,其结构用z字形堆垛(Жданов符号)表示时为231R:[(33)₁₂32]₃,249R:[(33)₁₃32]₃,321R:[(33)₁₇32]₃, 339R:[(33)₁₈32]₃,237R:[(33)₁₂34]₃,417R:[(33)₂₂34]₃, 453R:[(33)₂₄34]₃,93R:[(44)₃43]₃,261R:[(44)₁₀43]₃。 关键词：     

Irradiation of germanium nanocrystals with reactor neutrons

The effect of reactor neutron irradiation on the structure of germanium nanocrystals ion-implanted into an amorphous silicon dioxide film was studied using laser Raman scattering, high-resolution transmission electron microscopy, and X-ray photoelectron spectroscopy. The sample irradiation with a high dose of fast reactor neutrons resulted in lattice destruction and amorphization of a part of nanocrystals, leaving off a significant part well retained. Thus indicating that this nano-based material may have potential for the fabrication of devices operating under extreme conditions. Radiation defect annealing and full restoration of the nanocrystal structure were observed at 800°C; however, the average size of nanocrystals and their spatial distribution were changed.     

Photoluminescence and Raman scattering of silicon nanopowders

Nanopowders obtained by evaporating silicon ingots with a powerful electron beam having an electron energy of 1.4 MeV in an Ar atmosphere are investigated. The nanopowders are studied by means of photoluminescence (PL) and Raman scattering (RS) spectroscopy. In simulating the PL spectra, the recombination energy dependences for the nanocrystals were found to be almost equal in vacuum and in silicon dioxide cores, allowing us to determine the average particle radius, which coincided with estimates obtained by analyzing the Raman spectra using an improved model of phonon localization that considers phonon dispersion in terms of quasi-momentum and direction.     

Fabrication and Characterization of Si Nanocrystals Synthesized by Electron Beam Evaporation of Si and SiO2 Mixture

Silicon nanocrystals synthesized by electron beam （e-beam） evaporation of Si and SiO2 mixture are studied. Rutherford backscattering spectrometry of the as-deposited Si-rich silicon dioxide or oxide （SRO） thin film shows that after evaporation, the Si and SiO2 concentration is well kept, indicating that the e-beam evaporation is suitable for evaporating mixtures of Si and SiO2. The SRO thin films are annealed at different temperatures for two hours to synthesize silicon nanoerystals. For the sample annealed at 1050℃, silicon nanoerystals with different sizes and the mean diameter of 4.5 nm are evidently observed by high resolution transmission electron microscopy （HRTEM）. Then the Raman scattering and photoluminescence spectra arising from silicon nanocrystals are further confirmed the above results.     

Optical properties of silicon nanoparticles synthesized via electrical spark discharge in water

In this paper, we report a simple and low-cost technique for fabrication of silicon nanoparticles via electrical spark discharge between two plane silicon electrodes immersed in deionized water (DI). The pulsed spark discharge with the peak current of 60 A and a duration of a single discharge pulse of 60 μs was used in our experiment. The structure, morphology, and average size of the resulting nanoparticles were characterized by means of X-Ray Diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM). TEM images illustrated nearly spherical and isolated Si nanoparticles with diameters in the 3–8 nm range. The Raman peaks of the samples were shifted to the lower wave numbers in comparison to this of bulk crystalline silicon indicating the existence of tiny particles. The optical absorption spectrum of the nanoparticles was measured in the violet–visible (UV–Vis) spectral region. By measuring of the band gap we could estimate the average size of the prepared particles. The silicon nanoparticles synthesized exhibited a photoluminescence (PL) band in the violet-blue region with a double peak at around 417 and 439 nm. It can be attributed to oxide-related defects on the surface of silicon nanoparticles, which can act as the radiative centers for the electron-hole pair recombination.     

Generation of web-like structures and nanoparticles by femtosecond laser ablation of silicon target in ambient air

Silicon nanoparticles were produced by femtosecond laser ablation in ambient air. Obtained samples were studied using dark-field optical microscopy, scanning electron microscopy and Raman-scattering spectroscopy. Two groups of structures can be found: (1) branched amorphous structures with a minimum element size of about 10 nm and incorporations of nanocrystals (0.6–6.6 nm from Raman scattering analysis); (2) larger crystal particles with smooth surface and a typical size of 50–200 nm that provide directional visible light scattering (at dark-field optical microscopy observations). An influence of environment on resulting phase composition of silicon nanoparticles was investigated by numerical evaluation of nanoparticle’s cooling rate. The calculation shows that cooling in ambient air ensures cooling rate sufficient for crystallization.     

Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing

The early stages of hydrogenated nanocrystalline silicon (nc-Si:H) films deposited by plasma-enhanced chemical vapour deposition were characterized by atomic force microscopy. To increase the density of nanocrystals in the nc-Si:H films, the films were annealed by rapid thermal annealing (RTA) at different temperatures and then analysed by Raman spectroscopy. It was found that the recrystallization process of the film was optimal at around 1000℃. The effects of different RTA conditions on charge storage were characterized by capacitance--voltage measurement. Experimental results show that nc-Si:H films obtained by RTA have good charge storage characteristics for nonvolatile memory.     

Titanium dioxide synthesized using titanium chloride: size effect study using Raman spectroscopy and photoluminescence

Titanium dioxide nanocrystals were prepared by the wet chemical method and characterized by X‐ray diffraction (XRD), transmission electron microscopy (TEM), Raman scattering (RS) and photoluminescence techniques. The XRD pattern shows the formation of single phase anatase structure of average sizes ∼7 nm (sample A) and ∼15 nm (sample B) for two samples. Additionally, TEM and RS were used to confirm the anatase crystal structure for both samples. The PL spectra show that the intensity of the sample A is more than that of sample B, which has been attributed to defect(s) and particle size variation. A modified phonon confinement model incorporating particle size distribution function and averaged dispersion curves for two most dispersive phonon branch (Γ‐X direction) have been used to interpret the size effect in Raman spectra. The obtained Raman peak shift and full width at half‐maximum agree well with the experimental data. Our observations suggest that the phonon confinement effects are responsible for a significant shift and broadening for the Raman peaks. Copyright © 2009 John Wiley & Sons, Ltd.     

Synthesis of a periodic SiC/C nanostructure

Highly porous periodic structures consisting of a three-dimensional replica of pores in the initial opal lattice have been synthesized by high-temperature thermochemical treatment of opal matrices filled with carbon compounds, followed by dissolution of silicon dioxide. It has been shown that the main phases of the composite are carbon and silicon carbide. Based on the X-ray diffraction, Raman, and IR spectroscopy data, it has been assumed that the composite contains fragments of hexagonal diamond. The photoluminescence and optical reflection spectra of the composites have been measured.     

研究SiC多种多型体连生方式的X射线方法

本文提出了一种研究碳化硅多种类型连生的晶体中连生次序的实验方法。用超声波研磨法将极硬的薄片状碳化硅单晶逐层磨薄并逐次摄取双套劳埃照片。对劳埃法得出的SiC多型类型数据的分析可以确定各种连生多型体的次序和比例。用一晶体的实验结果对Mitchell的碳化硅多型性机理作了讨论。