A first principle study of adsorption of two proximate nitrogen atoms on graphene

Different possible configurations of two nitrogen‐adatoms on graphene are studied using density functional theory. Adsorption of single nitrogen atom on the bridge site of graphene is accompanied by distortion of the sheet. Electronically, this case amounts to p‐type doping. Two N atoms adsorbed on the graphene sheet can share a bond in two ways. They acquire positions either just above two adjacent carbon atoms or they form a bridge across opposite bonds of a hexagon in the sheet. Both these configurations also induce structural distortion of the sheet. Another stable configuration consists of two N atoms bonded as an N₂ molecule physisorbed on the graphene sheet. It is also possible to adsorb two N atoms on opposite sides of the graphene sheet, bonded to the same two C atoms. Moreover, two N atoms can be individually adsorbed on alternate bridge sites of neighboring hexagons experiencing a repulsion, the energy for which arises from the additional distortion of the graphene sheet. The densities of states near the Fermi level are found to be dependent on the adsorption configurations of two nitrogen atoms on graphene. Thus the electronic properties of graphene can be controlled by the selective adsorption of two nitrogen atoms. © 2014 Wiley Periodicals, Inc.     

Attractive interaction between transition-metal atom impurities and vacancies in graphene: a first-principles study

We present a density functional theory study of transition metal adatoms on a graphene sheet with vacancy-type defects. We calculate the strain fields near the defects and demonstrate that the strain fields around these defects reach far into the unperturbed hexagonal network and that metal atoms have a high affinity to the non-perfect and strained regions of graphene. Metal atoms are therefore attracted by the reconstructed defects. The increased reactivity of the strained graphene makes it possible to attach metal atoms much more firmly than to pristine graphene and supplies a tool for tailoring the electronic structure of graphene. Finally, we analyze the electronic band structure of graphene with defects and show that some defects open a semiconductor gap in graphene, which may be important for carbon-based nanoelectronics.     

Adsorption of DNA/RNA nucleobases on hexagonal boron nitride sheet: an ab initio study

Our ab initio calculations indicate that the interaction of deoxyribonucleic/ribonucleic acid (DNA/RNA) nucleobases [guanine (G), adenine (A), thymine (T), cytosine (C), and uracil (U)] with the hexagonal boron nitride (h-BN) sheet, a polar but chemically inert surface, is governed by mutual polarization. Unlike the case of graphene, all nucleobases exhibit the same stacking arrangement on the h-BN sheet due to polarization effects: the anions (N and O atoms) of nucleobases prefer to stay on top of cations (B) of the substrate as far as possible, regardless of the biological properties of nucleobases. The adsorption energies, ranging from 0.5 eV to 0.69 eV, increase in the order of U, C, T, A and G, which can be attributed to different side groups or atoms of nucleobases. The fundamental nature of DNA/RNA nucleobases and h-BN sheet remains unchanged upon adsorption, suggesting that the h-BN sheet is a promising template for DNA/RNA-related research, such as self-assembly.     

Adsorption of 3d transition-metal atoms on two-dimensional penta-graphene: A first-principles study

The adsorption of single 3d transition metal (TM) atoms (from Sc to Zn) on a (3 × 3) penta-graphene (PG) sheet has been systematically studied by means of density-functional theory calculations. We particularly study the effect of the TM adatom on the structural, electronic, and magnetic properties when adsorbed on the PG sheet. Our calculations have shown that most of the TM adatoms are preferably adsorbed on the T₂ site (i.e., the top of the C₂ atom located at the bottom layer), while Cr, Zn, and Ni are preferably adsorbed on different B sites. The calculated band structures demonstrate that all TM-PG systems remain semiconductors such that the gap between the valence and conduction bands moves to a lower energy state relative to the Fermi level. For this reason, an apparent narrowing in the band gap values for the TM-PG systems has been predicted (0.11 – 0.97 eV) compared to the band gap of the isolated PG sheet (2.23 eV). Additionally, our results indicate that most of the TM-PG systems are magnetic, with the exception of Ni-PG and Zn-PG systems. Consequently, the engineering of the electronic properties of the TM-PG systems implies that such systems might be promising candidates for different applications.     

Influence of Neighboring Layers on Interfacial Energy of Adjacent Layers

The binding energy and generalized stacking-fault energy (GSFE) are two critical interface properties of two dimensional layered materials, and it is still unclear how neighboring layers affect the interface energy of adjacent layers. Here, we investigate the effect of neighboring layers by comparing the differences of binding energy and GSFE between trilayer heterostructures (graphene/graphene/graphene, graphene/graphene/boron nitride, boron nitride/graphene/boron nitride) and bilayer heterostructures (graphene/graphene, graphene/boron nitride) using density functional theory. The binding energy of the adjacent layers changes from -2.3% to 22.55% due to the effect of neighboring layer, with a very small change of the interlayer distance. Neighboring layers also make a change from -2% to 10% change the GSFE, depending on the property of the interface between adjacent layers. In addition, a new simple expression is proven to describe the GSFE landscape of graphene-like structure with high accuracy.     

Structural Characteristics of Hydrogenated Carbon and Boron Nitride Nanotubes: Impact of H?H Interactions

The structural characteristics of perhydrogenated carbon and boron nitride nanotubes are determined by means of quantum chemical calculations. Two families of nanotubes are systematically studied for both carbon and boron nitride, the nanotubes being derived from the perhydrogenated (110) and (111) sheets of diamond and cubic boron nitride. Single‐walled perhydrogenated carbon nanotubes prefer structures analogous to the (111) sheet. In clear contrast, the single‐walled perhydrogenated boron nitride nanotubes prefer structures analogous to the (110) sheet. The significantly different structural characteristics are due to the polarization of hydrogen atoms in the perhydrogenated boron nitride nanotubes. The presence of attractive electrostatic H? H interactions leads to a strong preference for multilayering of the boron nitride sheets and nanotubes. The results are expected to provide new insights into the structural characteristics of main‐group binary hydrides.     

Structure,electronic, and magnetic properties of 3d transition metal intercalated borophene/BP heterostructures

The intercalation of various atoms or molecules has become one promising way to manipulate the electronic and magnetic properties of layered materials. Using density functional calculations, we explored the 3d transition metal (TM) intercalated α-borophene/black phosphorus (α-B/BP) heterostructure, TM@(α-B/BP) (TM = Sc-Ni), on their structure, electronic and magnetic properties. Our results demonstrate that TM@(α-B/BP)s can be ferromagnetic (FM), antiferromagnetic (AFM) and nonmagnetic depending on the choice of TM atoms, and most systems have large magnetic anisotropic energy. Particularly, Ti@(α-B/BP) is AFM semiconductor with Néel temperature of 470 K, which is much higher than room temperature. Moreover, the electronic and magnetic properties of TM@(α-B/BP)s can be further altered by the TM intercalation concentration. Our results provide a feasible way to design promising candidates for applications in electronic and information storage devices.     

Pt on graphene monolayers supported on a Ni(111) substrate: relativistic density-functional calculations

The structural, energetic, and magnetic properties of Pt atoms and dimers adsorbed on a Ni-supported graphene layer have been investigated using density-functional calculations, including the influence of dispersion forces and of spin-orbit coupling. Dispersion forces are found to be essential to stabilize a chemisorbed graphene layer on the Ni(111) surface. The presence of the Ni-substrate leads not only to a stronger interaction of Pt atoms and dimers with graphene but also to a locally increased binding between graphene and the substrate and a complex reconstruction of the adlayer. The stronger binding of the dimer also stabilizes a flat adsorption geometry in contrast to the upright geometry on a free-standing graphene layer. These effects are further enhanced by dispersion corrections. Isolated Pt adatoms and flat dimers are found to be non-magnetic, while an upright Pt dimer has strongly anisotropic spin and orbital moments. For the clean C/Ni(111) system, we calculate an in-plane magnetic anisotropy, which is also conserved in the presence of isolated Pt adatoms. Surprisingly, upright Pt-dimers induce a re-orientation of the easy magnetic axis to a direction perpendicular to the surface, in analogy to Pt(2) on a free-standing graphene layer and to the axial anisotropy of a gas-phase Pt(2) dimer.     

Mechanical properties of diboron-porphyrin sheet under strain: A density functional theory study

The mechanical properties of a new two-dimensional semiconductor material named diboron-porphyrin (DP) are studied based on density functional theory. The behavior of DP monolayer under uniaxial and biaxial loadings as well as shear stress is investigated. The in-plane stiffness, Poisson's ratio, bulk and shear moduli of the DP monolayer are found to be close to those of a graphene sheet. It can be concluded that the DP monolayer has stiffness close to the graphene sheet. The difference in magnitude of in-plane stiffness and Poisson's ratio along x- and y-directions shows slightly anisotropic mechanical properties of DP monolayer. It is also observed that DP monolayers can bear high tensile strains before failure. The high stability and hardly deformable structure of DP monolayer are due to its high planar packing density which is comparable with graphene sheet. The fantastic mechanical properties of DP show these materials are desirable for application in nanomechanical devices.     

Electronic structure of octagonal boron nitride nanotubes

The effect of an octagonal lattice configuration on a boron nitride nanotube is explored using first principle calculations. Calculations show that the formational energy of an octagonal boron nitride nanotube (o‐BNNT) is an exothermic reaction. Boron and nitrogen atoms within an o‐BNNT have an average of 2.88 electrons and 9.09 electrons, respectively, indicating ionic‐like bonding. In addition, the electronic structure of the octagonal boron nitride nanotube shows semiconductive properties, while h‐BNNT is reported to be an insulator. Additional o‐BNNTs with varying diameters are calculated where the results suggest that the diameter has an effect on the binding energy and bandgap of the o‐BNNT. The defect sites of the o‐BNNT are reactive against hydrogen where a boron defect is particularly reactive. Thus, this work suggests that physical and chemical properties of a boron nitride nanotube can be tailored and tuned by controlling the lattice configuration of the nanotube.     

贵金属原子与点缺陷石墨烯的键增强作用

通过密度泛函理论研究了Ag、Au、Pt原子在完美和点缺陷(包括N掺杂、B掺杂、空位点缺陷)石墨烯上的吸附以及这些体系的界面性质.研究表明Ag、Au不能在完美的石墨烯上吸附,N、B掺杂增强了三种金属与石墨烯之间的相互作用.而空位点缺陷诱发三种金属在石墨烯上具有强化学吸附作用.通过电子结构分析发现,N掺杂增强了Au、Pt与C形成的共价键,而Au、Ag与B形成了化学键.空位点缺陷不仅是金属原子的几何固定点,同时也增加了金属原子和碳原子之间的成键.增强贵金属原子和石墨烯相互作用的顺序是:空位点缺陷>>B掺杂>N掺杂.     

New insights into the interaction of hydrogen atoms with boron-substituted carbon

Boron substitution in carbon materials has been comprehensively investigated using the density functional theory method. It was found that there is a correlation between the stability of the graphene sheet, the distribution of pi electrons, the electrostatic potential, and the capability for hydrogen-atom adsorption. Boron substitution destabilizes the graphene structure, increases the density of the electron wave around the substitutional boron atoms, and lowers the electrostatic potential, thus improving the hydrogen adsorption energy on carbon. However, this improvement is only ca. 10-20% instead of a factor of 4 or 5. Our calculations also show that two substitutional boron atoms provide consistent and reliable results, but one substitutional boron results in contradictory conclusions. This is a warning to other computational chemists who work on boron substitution that the conclusion from one substitutional boron might not be reliable.     

Electronic structures and bonding of graphyne sheet and its BN analog

Using density functional theory and generalized gradient approximation for exchange and correlation, we present theoretical analysis of the electronic structure of recently synthesized graphyne and its boron nitride analog (labeled as BN-yne). The former is composed of hexagonal carbon rings joined by C-chains, while the latter is composed of hexagonal BN rings joined by C-chains. We have explored the nature of bonding and energy band structure of these unique systems characterized by sp and sp(2) bonding. Both graphyne and BN-yne are found to be direct bandgap semiconductors. The bandgap can be modulated by changing the size of hexagonal ring and the length of carbon chain, providing more flexibilities of energy band engineering for device applications. The present study sheds theoretical insight on better understanding of the properties of the novel carbon-based 2D structures beyond the graphene sheet.     

Reactivity of Graphene and Hexagonal Boron Nitride In‐Plane Heterostructures with Oxygen: A DFT Study

A density‐functional study has been undertaken to investigate the chemical properties of in‐plane heterostructures of graphene and hexagonal boron nitride. The interactions of armchair and zigzag linking edges with oxygen are looked at in detail. The results of the calculations indicate that the linking edges are highly reactive to oxygen atoms and predict that oxygen molecules can accordingly be adsorbed dissociatively. Furthermore, because oxygen atoms cooperatively interact with the heterostructures, the process can lead to opening of the linking edges, thus splitting the two materials.     

Pt(3) and Pt(4) clusters on graphene monolayers supported on a Ni(111) substrate: Relativistic density-functional calculations

Density-functional theory including spin-orbit coupling and corrections for dispersion forces has been used to investigate the structural and magnetic properties of Pt(3) and Pt(4) clusters deposited on a graphene layer supported on a Ni(111) substrate. It is shown that the strong interaction of the Pt atoms with the Ni-supported graphene stabilizes a flat triangular and a slightly bent rhombic structure of the clusters. Pt atoms are located nearly on top of the C atoms of the graphene layer, slightly shifted towards the bridge positions because the Pt-Pt distances are larger than the C-C distances of the graphene sheet lattice-matched to the Ni support. The strong interaction with the substrate leads to a substantial reduction of both the spin and orbital moments of the Pt atoms, not only compared to the clusters in the gas-phase, but also compared to those adsorbed on a freestanding graphene layer. The trends in the magnetic moments and in the magnetic anisotropy of the cluster/substrate complex have been analyzed and it is demonstrated that the anisotropy is dominated by the Ni support.     

Optical Properties of CdS Quantum Dots on Graphene

Hybrid systems based on graphene and semiconductor quantum dots are prospective materials for optoelectronics and photonics. In this work, electronic structure and dielectric properties of small particles of cadmium sulfide on the surface of graphene were studied using the density functional theory. The optical spectrum of this hybrid structure depends on the orientation of the nanoparticle relative to graphene due to the interaction between electrons of sulfur atoms on the surface of the CdS particle and π-orbitals of carbon atoms.     

Electronic structures and transport properties of fluorinated boron nitride nanoribbons

By applying the nonequilibrium Green's functions and the density-functional theory, we investigate the electronic structures and transport properties of fluorinated zigzag-edged boron nitride nanoribbons. The results show that the transition between half-metal and semiconductor in zigzag-edged boron nitride nanoribbons can be realized by fluorination at different sites or by the change of the fluorination level. Moreover, the negative differential resistance and varistor-type behaviors can also be observed in such fluorinated zigzag-edged boron nitride nanoribbon devices. Therefore, the fluorination of zigzag-edged boron nitride nanoribbons will provide the possibilities for a multifunctional molecular device design.     

Electronic structure and magnetic properties of hexagonal and cubic forms of aluminum nitride doped with <Emphasis Type="Italic">sp</Emphasis> impurities (B,C, O)

A comparative study of the band structure and magnetic properties of the hexagonal and cubic modifications of aluminum nitride doped with boron, carbon, and oxygen in the nitrogen sublattice has been performed using the ab initio FLAPW-GGA method. Preliminary conclusions on the comparative chemical activity of these phases are drawn from estimates for the energies of substitution of nitrogen atoms by dopants. It has been shown that the doping with boron and nitrogen leads to transition of hexagonal AlN into a magnetic state with high spin polarization of near-Fermi electrons, but for cubic AlN, this effect is absent.     

Boron‐Double‐Ring Sheet,Fullerene, and Nanotubes: Potential Hydrogen Storage Materials

Similar to carbon‐based graphene, fullerenes and carbon nanotubes, boron atoms can form sheets, fullerenes, and nanotubes. Here we investigate several of these novel boron structures all based on the boron double ring within the framework of density functional theory. The boron sheet is found to be metallic and flat in its ground state. The spherical boron cage containing 180 atoms is also stable and has I symmetry. Stable nanotubes are obtained by rolling up the boron sheet, and all are metallic. The hydrogen storage capacity of boron nanostructures is also explored, and it is found that Li‐decorated boron sheets and nanotubes are potential candidates for hydrogen storage. For Li‐decorated boron sheets, each Li atom can adsorb a maximum of 4 H₂ molecules with g_d=7.892 wt %. The hydrogen gravimetric density increases to g_d=12.309 wt % for the Li‐decorated (0,6) boron nanotube.     

半导体/石墨烯复合光催化剂的制备及应用

首先分析了石墨烯和半导体光催化剂的特点,以及二者复合后可能具有的优越性质,接着介绍了石墨烯和半导体复合光催化剂的制备方法,归纳了石墨烯增强半导体光催化的机理,然后阐述了复合光催化剂在降解有机污染物、光催化分解水产氢、光催化还原CO2制有机燃料和光催化灭菌四个典型的应用,最后对半导体/石墨烯复合光催化剂未来的发展趋势提出了展望.