SIN+ GaAs结构中的Franz-Keldysh振荡的傅里叶变换研究

利用傅里叶变换(FT)方法,对Franz-Keldysh振荡(FKO)的理论线性作了详细的数值模拟,并 用光调制反射谱(PR)测量了一组本征层(I层)厚度不同的表面-本征层-n型重掺杂层(SIN⁺)结构的GaAs样品的FKO. PR谱的FT分析表明,一部分样品的FT谱,包括其实部、虚 部和模,与理论线性符合得比较好,由此求出轻空穴(LH)和重空穴(HH)的约化质量平方根之 比μ_l/μ_h对不同样品在0805—0816之间,同时也可以求出 关键词： Franz-Keldysh振荡 傅里叶变换 GaAs     

显微光谱研究半绝缘GaAs带边以上E0+Δ0光学性质

通过显微光致发光技术和显微拉曼(Raman)技术研究了半绝缘GaAs (SI-GaAs)晶体的带边附近的发光. 在光荧光谱中，观察到在高于GaAs带边0.348eV处有一个新的荧光峰. 结合Raman谱指认此发光峰来源于GaAs的E₀＋Δ₀能级的非平衡荧光发射. 同时, 通过研究E₀＋Δ₀能级的偏振、激发光强度依赖关系，以及温度依赖关系说明E₀＋Δ₀能级与带边E₀共享了共同的导带位置Γ₆，同时这也说明在GaAs中主要是导带的性质决定了材料的光学行为.同时，通过与n-GaAs和δ掺杂GaAs相比较，半绝缘GaAs晶体的E₀＋Δ₀能级的发光峰更能反映GaAs电子能级高临界点E₀＋Δ₀的能量位置和物理性质. 研究结果说明显微光致发光技术是研究半导体材料带边以上能级光学性质的一种非常有力的研究工具. 关键词： 半绝缘GaAs 显微光致发光 自旋轨道分裂     

虚阴极产生微波的一些基本特性

用Vlasov-Poisson方程对相对论电子束在单板、双板间的传播过程进行了数值模拟,给出了单板模型空间电荷积累最大的位置,不同位置上的电流J、电子数密度n、电场E的振荡频率随入射电子数密度n₀、入射速度v₀的变化关系,双板模型空间电荷积累最大的位置,J、n、E的振荡频率随入射流J₀及两板间距离的变化关系。虚阴极位置的数值结果与稳态理论给出的结果相近,它的振荡频率符合经验公式(1~√2π)ω_peb。单板时入射电子数密度按速度服从高斯分布,能散△E_n/E_n < 10%时的数值结果给出与单能情况基本相同的结论。     

ZnO/p-Si异质结的深能级及其对发光的影响

利用深能级瞬态谱(DLTS)和光致发光谱(PL),研究了ZnO/pSi异质结的两种不同温度(850℃,1000℃)退火下的深能级中心。发现850℃退火的样品存在3个明显的深中心,分别为E₁=E_v+0.21eV,E₂=E_v+0.44eV,E₃=E_v+071eV;而1000℃退火样品仅存在一个E₁=E_v+021eV的中心,且其隙态密度要比850℃退火的大。同时,测量了两个样品的PL谱。发现1000℃退火可消除一些影响发光强度的深能级,对改善晶格结构,提高样品的发光强度有利。     

量子限制受主远红外电致发光器件的制备与测量

采用分子束外延技术生长GaAs/AlAs三量子阱,并在中间的GaAs阱中δ-掺杂浅受主杂质Be原子,制作出量子限制受主远红外Teraherz原型电致发光器件.实验上测量得到4.5 K时器件的电致发光谱（EL）和电传输特性（I-V曲线）.在EL发射谱中清楚地观察到222 cm^-1处宽的尖峰,这来源于Be受主奇宇称激发态到其基态的辐射跃迁,而非辐射弛豫过程则使发射谱的信号很弱.另外在I-V曲线中072和186 V的位置出现两个共振隧道贯穿现象,分别对应于中间δ-掺杂量子阱受主能级1s_3/2(Γ₆+Γ₇)到左边非掺GaAs量子阱中HH带,及右边非掺杂GaAs量子阱中HH重空穴带到中间掺杂GaAs量子阱中Be受主杂质原子奇宇称激发态2p_5/2(Γ₆+Γ₇)能级的共振隧穿. 关键词： 量子限制效应 电致发光 共振隧穿效应 δ-掺杂GaAs/AlAs三量子阱     

Effects of an electromagnetic field on intracellular calcium oscillations in a cell with external noise

Intracellular calcium ion concentration oscillation in a cell subjected to external noise and irradiated by an electromagnetic field is considered. The effects of the intensity E₀, the polar angle θ and the frequency omega of the external electric field on steady-state probability distribution and the mean Ca²⁺ concentration, respectively, are investigated by a numerical calculation method. The results indicate that (i) variation of ω cannot affect the intracellular calcium oscillation; (ii) the steady-state probability distribution presents a meaningful modification due to the variations of E₀ and θ, while variation of θ does not affect the steady-state probability distribution under the condition of a small E₀, and E₀ cannot affect the steady-state probability distribution either when θ = π/2; (iii) the mean Ca²⁺ concentration increases as E₀ increases when θ < π/2 and, as θ increases, it first increases and then decreases. However, it does not vary with E₀ increasing when θ = π/2, but it increases with θ increasing when E₀ is small.     

耦合强度和磁场对极化子基态的影响

利用线性组合算符和幺正变换相结合的方法,推导出极化子基态与耦合强度和磁场强度的关系。数值计算表明:当磁场强度给定时,随着耦合常数α的增加,振动频率λ先减小后增大;基态能量E₀单调下降;自陷能E_0tr单调增大;Landau能E_0L先增大,达到最大值后又下降。当耦合强度给定时,随着磁场强度的增大,λ单调增大,且α愈小,λ增加愈快;基态能量E₀随磁场强度的增大而增大;自陷能E_0tr随着磁场强度的增大而略有增加;Landau能E_0L随着磁场强度的增大先增大,达到最大值后,又开始下降。     

试验优化设计Er3+/Yb3+共掺BaGd2ZnO5荧光粉及其上转换发光性质

为得到绿光和红光最大发光强度的Er³⁺/Yb³⁺共掺BaGd₂ZnO₅上转换材料荧光粉, 首先采用试验优化设计中的均匀设计初步寻找Er³⁺/Yb³⁺合理的掺杂浓度; 其次通过二次通用旋转组合设计进一步优化实验, 建立起Er³⁺/Yb³⁺掺杂浓度与绿光和红光发光强度的回归方程; 最后通过遗传算法计算出方程的最优解, 即绿光和红光最大发光强度时对应的Er³⁺/Yb³⁺掺杂浓度. 利用传统的高温固相法分别制备出最优样品. 采用X 射线衍射对得到荧光粉的晶体结构进行了分析, 证明了所有产物均为纯相BaGd₂ZnO₅. 采用980 nm抽运激光作为激发源, 在同样的条件下测量了样品的上转换荧光发射光谱, 从中可见样品有较强的红光发射和绿光发射, 发光中心位于662, 551和527 nm, 分别对应于⁴F_9/2→⁴I_15/2, ⁴S_3/2→⁴I_15/2 及²H_11/2→⁴I_15/2能级跃迁. 研究了绿光和红光最优样品的上转换发光强度与激光器工作电流之间的关系, 通过分析发现红色和绿色上转换发光均为双光子过程. 由归一化的绿色上转换发射光谱可以看出, 激光器工作电流导致的样品温度变化可以忽略不计. 由于能级²H_11/2和⁴S_3/2之间存在热平衡, 并满足玻尔兹曼分布, 由此探讨了绿光最优样品上转换发射光谱中的绿色发射与温度的关系, 计算出²H_11/2和⁴S_3/2之间的能级差为ΔE=926.11 cm^-1. 研究了绿光最优样品的温度效应, 随着温度的升高, 发射强度逐渐变小, 出现了温度猝灭现象. 并计算了样品的激活能, 分别为总体激活能ΔE_总=0.45 eV, 绿光激活能ΔE_绿=0.45 eV, 红光激活能ΔE_红=0.46 eV.     

中低速C3+与He，Ne，Ar原子相互作用过程中单电子转移绝对截面的测量

实验测量了1.7v₀—4.2v₀(v₀为玻尔速度,v₀=2.19×10⁸cm/s)的C³⁺与He,Ne,Ar原子碰撞过程中单电子转移绝对截面.将实验结果与多体经典轨道蒙特卡罗模拟计算结果做了比较,发现测量结果与多体经典轨道蒙特卡罗模拟计算结果在趋势上相符.当入射离子速度在1.7v₀—2 关键词： 离子-原子碰撞 单电子转移 绝对截面     

亮暗屏蔽光伏孤子在LiNbO3晶体中的大自偏转

用数值方法证实了亮、暗屏蔽光伏孤子在有外加电场的LiNbO₃晶体中都可以发生大自偏转,并验证了这种自偏转现象不但与晶体中受主浓度N_A有关而且还与外加电场E₀有关. 在E₀相同的条件下,N_A越小这种自偏转现象越明显,在N_A相同的条件下,E₀越大自偏转现象越明显. 还发现亮、暗屏蔽光伏孤子的自偏转现象不同：亮屏蔽光伏孤子整体都发生明显偏转,暗屏蔽光伏孤子的偏转只是发生在一侧,其极值位置和另一侧几乎不发生偏转. 关键词： 自偏转 空间孤子 光折变效应     

A spectroscopic ellipsometric investigation of new critical points of Zn1−xMnxS epilayers

Zn_1−xMn_xS epilayers were grown on GaAs (1 0 0) substrates by hot-wall epitaxy. X-ray diffraction (XRD) patterns revealed that all the epilayers have a zincblende structure. The optical properties were investigated using spectroscopic ellipsometry at 300 K from 3.0 to 8.5 eV. The obtained data were analyzed for determining the critical points of pseudodielectric function spectra, (E) = ₁(E) + i₂(E), such as E₀, E₀ + Δ₀, and E₁, and three E₂ (Σ, Δ, Γ) structures at a lower Mn composition range. These critical points were determined by analytical line-shapes fitted to numerically calculated derivatives of their pseudodielectric functions. The observation of new peaks, as well as the shifting and broadening of the critical points of Zn_1−xMn_xS epilayers, were investigated as a function of Mn composition by ellipsometric measurements for the first time. The characteristics of the peaks changed with increasing Mn composition. In particular, four new peaks were observed between 4.0 and 8.0 eV for Zn_1−xMn_xS epilayers, and their characteristics were investigated in this study.     

电场下GaAs/Ga1-xAlxAs量子阱中的子带和激子

本文利用有限势垒模型,研究电场对GaAs/Ga_1-xAl_xAs量子阱中子带和激子的影响。对阱宽为105?的GaAs/Ga_0.66Al_0.34As量子阱,电场由0—1.2×10⁵V/cm,我们计算了电子和空穴的子带以及激子的结合能。基于上述计算结果,所得电子-空穴重叠函数和激子峰的能量移动与实验测量符合得较好。 关键词：     

FORMATION AND MAGNETIC PROPERTIES OF Dy2Fe17-xMnxC(x = 0-17) PREPARED BY ARC-MELTING

We report on alloys formed by replacing iron with manganese in the compound Dy₂Fe₁₇C_1.0 Samples were characterized by X-ray diffraction and magnetic measure-ments, The 2:17-type structure can be crystallized in the whole range of manganese substitution. The Curie temperature of the series of Dy₂Fe_17-xMn_xC_1.0(x= 0-17) drops down considerably from 515K for x = 0 to about 20K for compounds with high manganese concentration, and the compensation point was observed in a narrow range of x≈4-6. The rapid decrease of the magnetization shows that the manganese substitution is not a simple magnetic dilution to the transition-metal sublattice mo-ment, it indicates that the moment of Mn may be antiparallel to that of Fe. The field dependence of the magnetization of Dy₂Fe_17-xMn_xC_1.0 may indicate the existence of the nonlinear magnetic structure for the samples with high Mn conoentrations.     

Degradation behavior of electrical properties of GaInAs (1.0 eV) and GaInAs (0.7 eV) sub-cells of IMM4J solar cells under1-MeV electron irradiation

In this work the degradation effects of the Ga_(0.7)In_(0.3)As(1.0 eV) and Ga_(0.42)In_(0.58)As(0.7 eV) sub-cells for IMM4J solar cells are investigated after 1-MeV electron irradiation by using spectral response and photoluminescence(PL) signal amplitude analysis, as well as electrical property measurements. The results show that, compared with the electrical properties of traditional single junction(SJ) GaAs(1.41 eV) solar cell, the electrical properties(such as Isc, Voc, and Pmax)of the newly sub-cells degrade similarly as a function of log ?, where ? represents the electron fluence. It is found that the degradation of Voc is much more than that of Isc in the irradiated Ga_(0.42)In_(0.58)As(0.7 eV) cells due to the additional intrinsic layer, leading to more serious damage to the space charge region. However, of the three types of SJ cells with the gap widths of 0.7, 1.0, and 1.4 eV, the electric properties of the Ga_(0.7)In_(0.3)As(1.0 eV) cell decrease largest under each irradiation fluence. Analysis on the spectral response indicates that the Jsc of the Ga_(0.7)In_(0.3)As(1.0 eV) cell also shows the most severe damage. The PL amplitude measurements qualitatively confirm that the degradation of the effective minority carrier life-time(τeff) in the SJ Ga_(0.7)In_(0.3)As cells is more drastic than that of SJ GaAs cells during the irradiation. Thus,the output current of Ga_(0.7)In_(0.3)As sub-cell should be controlled in the irradiated IMM4J cells.     

应变层异质结ZnS/ZnSe、ZnS/ZnSxSe1-x和ZnSe/ZnSxSe1-x价带带阶的研究

采用基于原子球近似下线性Mufin-Tin轨道(LMTO-ASA)的平均键能计算方法,研究了以ZnS_xSe_1-x为衬底,沿(001)方向外延生长的应变层异质结ZnS/ZnSe、ZnS/ZnS_xSe_1-x和ZnSe/ZnS_xSe_1-x的价带带阶值ΔE_v(x).研究表明,ΔE_v(x)值随衬底合金组分x单调变化。且两者的关系是非线性的。在此计算结果与其它理论计算和实验结果符合较好。     

On the parameters for electrocaloric effect predicted by indirect method

The influences of specific heat capacity C_P, temperature step △T, electric field step △ E, and initial electric field E₁ on predicted electrocaloric (EC) temperature △ T of monodomain BaTiO₃ are examined by combining the Maxwell equation and phenomenological theory. Since the procedure is similar to indirect measurement of the EC effect, the results can serve as a reference for experiments. The results suggest that (i) it is reasonable to use zero-field C_P, (ii) optimized △ T should be 2 K, (iii) it is better to keep △ E<E_C, and (iv) E₁<E_C. Here, E_C is the coercive field of material.     

Preparation and magnetic properties of the Sb-doped Bi---Pb---Sr---Ca---Cu---O superconductors

Two groups of samples were prepared by the wet method with nominal composition Bi_x1Pb_x2Sb_x3Sr₂Ca₃Cu₄O_z. In the first group x₁ + x₂ + x₃ = 2. Here x₁ ranges from 1.2 to 1.6 with x₂ varying from 0.72 to 0.12. The second group is characterized by x₁ + x₂ = 2. Here x₁ was chosen to be 1.4 and 1.6 while x₃ ranges from 0.08 to 0.16. The results show: (i) high Sb content reduces the transition temperature; (ii) for small Sb contents the transition temperature is relatively constant but the transition becomes sharper, (iii) the best sample (with x₁ = 1.4, x₂ = 0.48 and x₃ = 0.12) exhibits a very sharp transition with a peak in the imaginary component of the ac susceptibility at 108.4 K; abd (iv) the transition of lightly Sb-doped material is strongly influenced by small external magnetic fields.     

Magnetic entropy change and magnetic properties of LaFe_(11.5)Si_(1.5) after controlling the Curie temperature by partial substitution of Mn and hydrogenation

Magnetic properties and magnetic entropy changes of La(Fe_(1-x)Mn_x)_(11.5)Si_(1.5)H_y compounds are investigated. Their Curie temperatures are adjusted to room temperature by partial Mn substitution for Fe and hydrogen absorption in 1-atm(1 atm = 1.01325×10~5Pa) hydrogen gas. Under a field change from 0 T to 2 T, the maximum magnetic entropy change for La(Fe_(0.99)Mn_(0.01))_(11.5)Si_(1.5)H_(1.61)is-11.5 J/kg. The suitable Curie temperature and large value of ?S_m make it an attractive potential candidate for the room temperature magnetic refrigeration application.     

Magnetic properties and percolation threshold in diluted B-spinel ZnCr2xAl2−2xS4: a study through high-temperature expansions

By making use of high-temperature series expansions (HTSE) of the correlation functions, we study the thermal and disorder variation of the short-range order (SRO) in the particular B-spinel ZnCr_2xAl_2−2xS₄. We developed the HTSE for the q-dependent static structure factor S(q) to the order 6 in reciprocal temperature including both the nearest- and next-nearest-neighbour interactions J₁ and J₂, respectively. Respecting the experimental fact that the broad diffuse peak of the neutron is situated at the particular wave vector q₀=[0 0 0.79] and is insensitive to the temperature for a given ratio of dilution x, we have estimated the thermal variation of J₁ and J₂ in the case of the pure compound.

The bond percolation threshold x_p of the ZnCr_2xAl_2−2xS₄ is determined by studying the disorder variation of the correlation length ξ. The x_p is considered as the concentration at which ξ vanishes. The obtained values are x_p=0.27 when only J₁ is considered and 0.23 when both J₁ and J₂ are taken into account.     

Ga含量对Mn2-xNiGa1+x结构和磁性的影响

系统研究了铁磁性形状记忆合金Mn_{2 -x}NiGa_1+x的结构、磁性和有序化转变. 研究表明: 随着Ga含量的增加, Mn_{2 -x}NiGa_1+x的母相结构由Hg₂CuTi 型逐渐转变到Cu₂MnAl型Heusler结构. 母相的晶格常数先增加后降低, 当x=0.3时达到最大值. 0.3 ≤x ≤0.8时, 材料除呈现Heusler结构的主相之外, 还出现了Ni₂In型六角相. 过渡金属中3d电子之间交换相互作用的减弱, 导致Mn_2-xNiGa_1+x主相的居里温度由Mn₂NiGa的590 K逐渐降低至Ga₂MnNi的220 K左右; 当x=0.6–0.8时, Ni₂In型六角相的居里温度与主相的居里温度出现分离. Ga对Mn的替代引起合金中原子间耦合作用的变化, 导致低温下Mn_{2 -x}NiGa_1+x的饱和磁化强度先增加后降低, 即x≤0.4时呈上升趋势, x>0.4时急剧下降. 差热分析结果显示, 随着x从0增加到1, 样品熔化温度逐渐降低, B2相到Heusler相的转变温度先降低后增加.