动力学研究AlN/α-Al2Ｏ3（0001）薄膜生长初期的吸附与扩散

采用基于第一性原理的从头计算分子动力学方法,计算了300—800℃下AlN吸附过程与系统能量、动力学轨迹以及扩散系数.研究表明,吸附过程由物理吸附、化学吸附和表面稳定态三个阶段组成,在吸附成键过程中,温度越高,粒子平均表面扩散能力增强.N原子的扩散系数大于Al原子的扩散系数,尤其是在物理吸附阶段.在较高温度条件下（大于700℃）,N的解吸附作用明显增强,不利于AlN的稳定吸附生长,500—700℃之间的温度有利于AlN在α-Al₂Ｏ₃（0001）表面的稳定吸附生 关键词： 2Ｏ₃（0001）表面')" href="#">α-Al₂Ｏ₃（0001）表面 扩散 吸附生长 从头计算分子动力学     

温度对GaN(0001)表面生长吸附SrO、BaO和TiO_2影响的理论研究

采用基于第一性原理的从头计算分子动力学方法,模拟了300、400、500、600和700℃下SrO、BaO和TiO_2分子在GaN(0001)表面吸附的动力学过程,研究了温度对原子运动轨迹、吸附能、界面电荷分布、稳定吸附方位和扩散系数的影响.温度不同,O-Ga成键时间不同,SrO分子中的O原子与GaN基底成键的Ga原子不同; TiO_2分子中O原子与GaN表面Ga原子成键的顺序也不同.温度对SrO、BaO和TiO_2分子在GaN(0001)表面的最终吸附形态和吸附方位有显著的影响.温度对不同吸附体系吸附能的影响也不相同;小分子在GaN(0001)基片表面优先吸附的顺序依次为TiO_2、SrO和BaO分子.数据分析显示SrO和BaO分子的最优生长温度是600℃,TiO_2分子的最优生长温度是500℃.     

Cs/GaN(0001)吸附体系电子结构和光学性质研究

采用基于第一性原理的密度泛函理论平面波超软赝势方法计算了 1/4ML Cs原子吸附 (2 × 2) GaN(0001) 表面的吸附能、能带结构、电子态密度、电荷布居数、功函数和光学性质. 计算发现, 1/4ML Cs 原子在 GaN(0001) 表面最稳定吸附位为 N 桥位, 吸附后表面仍呈现为金属导电特性, Cs原子吸附GaN(0001)表面后主要与表面 Ga 原子发生作用, Cs6s 态电子向最表面 Ga 原子转移, 引起表面功函数下降. 研究光学性质发现, Cs 原子吸附 GaN(0001) 表面后, 介电函数虚部、吸收谱、反射谱向低能方向移动.     

NH3在TaC(0001)表面吸附和解离的第一性原理研究

采用自旋极化密度泛函理论(DFT)并结合周期平板模型的方法,研究了NH₃在TaC表面的吸附和分解反应机理.表面能计算结果显示,以Ta为终止的TaC(0001)面为最稳定的表面;NH₃分子通过其孤对电子优先吸附在顶位top位,而NH₂和H最稳定吸附位置为三重hcp位,NH和N吸附在三重fcc位.过渡态结果表明氮原子的复合反应脱附为整个反应的限速步骤.电子结构计算结果表明,NH3分子及其片段通过其N原子的2p_z轨道与底物Ta的5d_z2轨道混合吸附于表面.随着脱氢反应的进行,电荷转移现象变得逐渐明显,吸附质和底物之间的电荷转移在加速NH₃脱氢催化过程中发挥重要作用.     

过渡金属Cu、Cr掺杂TiO2表面氧化性气体NO2光学气敏传感特性

采用密度泛函理论（DFT）体系广义梯度近似（GGA）第一性原理平面波超软赝势方法,分析锐钛矿型TiO₂（101）表面吸附NO₂分子光学气敏传感的微观机理.结果表明：Cu和Cr原子易于掺入TiO₂（101）表面,掺杂表面能稳定地吸附NO₂分子且吸附后光学性质发生显著变化.表面吸附NO₂分子后,Cu掺杂TiO₂（101）表面对分子的吸附能最大,吸附后结构更稳定,分子与表面的距离最短.通过分析差分电荷密度和电荷布居数发现,NO₂分子与基底表面间发生电荷转移,转移电子数目：Cu掺杂表面 > Cr掺杂表面 > 无掺杂表面.对比吸收光谱和反射光谱发现,在Cu掺杂表面吸附分子后,光学性质变化最明显,说明表面与吸附分子间氧化还原能力是决定光学气敏传感性能的核心因素.在过渡金属中,Cu与Cr都有4s价电子结构,其4s电子降低了材料表面氧空位的氧化性,增加了其还原性.对于氧化性气体,可以提升表面与分子的氧化还原作用,而Cu的4s电子更加活泼,从而光学气敏传感特性更加明显.因此,Cu掺杂的TiO₂对氧化性气体是一种较好的光学气敏传感材料.     

锐钛矿相TiO2(101)表面对有机分子不同官能团微观吸附的机制

挥发性有机化合物(VOCs)严重危害了生态环境和人体健康,因此对具有典型官能团的VOCs气体进行灵敏检测具有重要意义.文章研究了具有典型官能团的VOCs气体C₂H₂、C₂H₄、HCOOH、CH₃OH、HCHO和CH₃COCH₃分子在锐钛矿相TiO₂(101)表面吸附的传感特性.结果表明：具有氧空位缺陷的表面对极性分子吸附时,偶极矩越大,吸附体系越稳定;对非极性分子吸附时,C原子成键饱和程度越低,吸附体系越稳定.分析发现,差分电荷密度和电荷布局体现出偶极矩大小和C原子成键饱和程度对气体分子得失电子能力的影响.对于极性分子,气体分子官能团中O原子得到电子的能力为OCH₃COCH₃>OHCHO>OCH₃OH>OHCOOH;对于非极性分子,官能团中C原子得到电子的能力为CC₂H₂>CC     

H2O在SrTiO3-(001)TiO2表面上吸附和解离的密度泛函理论研究

利用密度泛函理论研究了0.25单层（ML）,0.5ML,0.75ML和1ML吸附率下H₂O在SrTiO₃-（001）TiO₂表面上的吸附行为.比较了不同吸附率下分子吸附和解离吸附的稳定性,利用微动弹性带（nudged elastic band）方法计算了H₂O的解离势垒.结果表明：在低吸附率（0.25ML和0.5ML）时,H₂O表现为解离吸附;在0.75ML吸附率下,分子吸附和解离吸附同时存在;而在全吸附（吸附率为1ML）时,分子吸附更稳定.基于对H₂O分子与表面之间以及H₂O分子之间的电荷转移和相互作用的分析,讨论了吸附率对H₂O吸附和解离的影响. 关键词： 2O')" href="#">H₂O 吸附 3-（001）TiO₂表面')" href="#">SrTiO₃-（001）TiO₂表面 密度泛函理论     

内掺过渡金属富勒烯衍生物Ni@C20H20几何结构、成键和电磁性质的密度泛函计算研究

采用密度泛函理论中的广义梯度近似对Ni@C₂₀H₂₀的几何结构、成键和电磁性质进行密度泛函计算研究.结构优化发现位于偏离笼子中心三种位置处的Ni原子优化之后均回到笼子中心.结合能和能隙分析表明C₂₀H₂₀的中心位置是Ni原子热力学和动力学最稳定的位置.成键分析表明：Ni原子位于C₂₀H₂₀中心时,和C原子之间几乎没有相互作用,保持自己的孤立状态.电磁分析表明：原子磁矩为2关键词： 20H₂₀')" href="#">C₂₀H₂₀ 20H₂₀')" href="#">Ni@C₂₀H₂₀ 几何结构 成键 电磁性质 密度泛函理论     

N2H4在NiFe(111)合金表面吸附稳定性和电子结构的第一性原理研究

采用基于色散校正的密度泛函理论进行了第一性原理研究, 详细分析了肼(N₂H₄)在Ni₈Fe₈/Ni(111)合金表面稳定吸附构型的吸附稳定性和电子结构及成键性质. 通过比较发现, 肼分子以桥接方式吸附在表面的两个Fe原子上是最稳定的吸附构型, 其吸附能为-1.578 eV/N₂H₄. 同时发现, 肼分子在这一表面上吸附稳定性的趋势为: 桥位比顶位吸附更有利, 且在Fe原子上比在Ni原子上的吸附作用更强. 进一步分析了不同吸附位点上稳定吸附构型的电子结构、电荷密度转移以及电子局域化情况. 结果发现: 相同吸附位点的电子态密度图基本一致, 并且N原子的p轨道和与之相互作用的表面原子的d轨道之间存在态密度上的重叠; 吸附后电荷密度则主要从肼分子转移到表面原子之上; 在电子局域化函数切面图中也发现吸附后电子被局域到肼分子的N原子和相邻的表面原子之间. 这些电子结构的表征都充分说明肼分子与表面原子之间通过电荷转移形成了强烈的配位共价作用.     

Zn吸附到含有氧空位(VO)以及羟基(-OH)的锐钛矿相TiO2(101)表面电子结构的第一性原理计算

基于密度泛函理论的第一性原理平面波超软赝势方法, 计算了Zn吸附到TiO₂(101)清洁表面、含有氧空位(V_O)的缺陷表面以及既含有氧空位(V_O)又含有羟基(-OH)表面的能量、Mulliken重叠布居数以及电子结构, 并找到了Zn在每种表面的最稳定结构(分别为模型(c), 模型(aI)以及模型(aII)). 通过对三种表面稳定结构的分析、对比发现: 首先, Zn原子吸附到清洁TiO₂(101)表面上, 主要与表面氧相互作用, 形成Zn–O共价键; 其次, 当Zn原子吸附到缺陷表面时, 吸附能减小到-1.75 eV, 说明Zn更容易吸附到氧空位上(模型(aI)); 最后, 纵观表面模型的能带结构以及态密度图发现, -OH的引入并没有引进新的杂质能级, Zn吸附此表面, 即Zn-TiO₂-V_O-OH, 使得禁带宽度缩短到最小(1.85 eV), 从而有望提高TiO₂的光催化活性. 关键词： 密度泛函理论 氧空位 羟基 Zn原子     

CO和O2分子与TiO2(110)表面负载Pt单原子的相互作用

Pt单原子在低温CO氧化反应中具有很高的催化活性. 利用扫描隧道显微术与密度泛函理论,研究了Pt单原子在还原性TiO₂(110)表面的吸附行为及其与CO和O₂分子的相互作用. 研究发现在80 K低温下,TiO₂表面的氧空位缺陷是Pt单原子的最优吸附位. 将CO和O₂分子分别通入Pt单原子吸附后的TiO₂表面,研究相应的吸附构型. 实验表明在低覆盖度下,单个Pt原子会俘获一个CO分子,CO分子同时与表面次近邻的五配位Ti原子(Ti_5c)成键,进而形成非对称的Pt-CO 复合物构型. 将样品从80 K升温到100 K后,TiO₂表面的CO分子会迁移到Pt-CO处形成Pt-(CO)₂的复合结构. 对于O₂分子,单个Pt原子同样会吸附一个O₂分子,O₂分子也会与最近邻或次近邻的Ti_5c原子成键形成两种Pt-O₂构型. 这些结果在单分子尺度上揭示了CO和O₂与Pt单原子的相互作用,呈现了CO与O₂反应中的初始状态.     

Water adsorption on the Be(0001) surface: from monomer to trimer adsorption

In this paper, the density functional theory has been used to perform a comparative theoretical study of water monomer, dimer, trimer, and bilayer adsorptions on the Be(0001) surface. In our calculations, the adsorbed water molecules are energetically favoured adsorbed on the atop sites, and the dimer adsorption is found to be the most stable with a peak adsorption energy of ～437 meV. Further analyses have revealed that the essential bonding interaction between the water monomer and the metal substrate is the hybridization of the water 3a₁-like molecular orbital with the (s, p_z) orbitals of the surface beryllium atoms. While in the case of the water dimer adsorption, the 1b₁-like orbital of the H₂O molecule plays a dominant role.     

表面桥氧空位对甲醛在二氧化钛表面吸附的影响

Oxygen vacancy (O_v) has significant influence on physical and chemical properties of TiO₂ systems,especially on surface catalytic processes.In this work,we investigate the effects of O v on the adsorption of formaldehyde (HCHO) on TiO₂(110) surfaces through firstprinciples calculations.With the existence of O_v,we find the spatial distribution of surface excess charge can change the relative stability of various adsorption configurations.In this case,the bidentate adsorption at five-coordinated Ti (Ti_5c) can be less stable than the monodentate adsorption.And HCHO adsorbed in O_v becomes the most stable structure.These results are in good agreement with experimental observations,which reconcile the long-standing deviation between the theoretical prediction and experimental results.This work brings insights into how the excess charge affects the molecule adsorption on metal oxide surface.     

SiO2-羟基表面上金属原子的第一性原理研究

采用第一性原理方法研究了SiO₂-羟基表面上几种金属原子的吸附性质，发现In和Ga在SiO₂-羟基表面上的结合很弱，而Fe，Co， Ni在该表面上与Si，O形成强的化学键.等势能面和扩散势垒计算表明In (Ga)的扩散激活能只有0.1—0.3 eV，表明这两种原子容易在表面上扩散.这些结果可以定性地解释纳米合成中的一些实验现象. 关键词： 第一性原理 表面扩散 结合能 金属原子     

Adsorption of water molecule on (001) and (110) surfaces of MgH2

First principle calculations have been performed to explore the adsorption characteristics of water molecule on (001) and (110) surfaces of magnesium hydride. The stable adsorption configurations of water molecule on the surfaces of MgH₂ were identified by comparing the total energies of different adsorption states. The (110) surface shows a higher reactivity with H₂O molecule owing to the larger adsorption energy than the (001) surface, and the adsorption mechanisms of water molecule on the two surfaces were clarified from electronic structures. For both (001) and (110) surface adsorptions, the O p orbitals overlapped with the Mg s and p orbitals leading to interactions between O and Mg atoms and weakening the O–H bonds in water molecule. Due to the difference of the bonding strength between O and Mg atoms in the (001) and (110) surfaces, the adsorption energies and configurations of water molecule on the two surfaces are significantly different.     

锐钛矿型TiO2(101)面原子几何及弛豫结构的第一性原理计算

采用平面波超软赝势方法计算了锐钛矿型TiO₂(101)面的表面能和表面原子弛豫结构.首先对TiO₂(101)面的6种不同的表面原子终止结构的体系总能量进行了计算,结果表明终止原子为两配位的O原子、次层为五配位的Ti原子的表面结构最为稳定.针对该表面研究了表面能和原子弛豫与模型中原子层数和真空厚度的关系,当原子层数为12层,真空厚度为0.4nm时,表面能收敛度小于0.01J/m².研究发现:表面上两配位的O原子向里移动约0.0012nm,五配 关键词： 第一性原理 2')" href="#">TiO₂ 表面结构 弛豫     

Adsorption of CO, CO2 and NO molecules on a BaTiO3 (0 0 1) surface

Since the development of Scanning Tunnelling Microscopy (STM) technique, considerable attention has been devoted to various molecules adsorbed on various surfaces. Also, a new concept emerged with molecules on surfaces considered as nano machines by themselves. In this context, a thorough knowledge of surfaces and adsorbed molecules at an atomic scale are thus particularly invaluable. The present work describes the first Density Functional Theory (DFT) study of adsorption of CO, CO₂ and NO molecules on a BaTiO₃ surface following a first preliminary calculation of O and O₂ adsorption on the same surface. In the previously considered work, we found that a (0 0 1) surface with BaO termination is more stable than the one with TiO₂-termination. Consequently, we extended our study to CO, CO₂ and NO molecules adsorbed on a (0 0 1) surface with BaO termination. The present calculation was performed on a (1 × 1) cell with one monolayer of adsorbed molecules. Especially, a series of cases implying CO molecules adsorbed in various geometrical configurations has been examined. The corresponding adsorption energy varies in the range of −0.17 to −0.10 eV. The adsorption energy of a CO₂ molecule directly located above an O surface atom (called O_s) is of the order of −0.18 eV. The O-C distance length is then 1.24 Å and the O-C-O and O-C-O_s angles are 134.0° and 113.0°, respectively. For NO adsorption, the most important induced structural changes are the followings: (i) the N-O bond is broken when a NO molecule is absorbed on a Ba-O_s bridge site. In that case, N and O atoms are located above an O and a Ba surface atom, respectively, whereas the O-Ba-O_s and N-O_s-Ba angles are 106.5° and 63.0°, respectively. The N-O distance is as large as 2.58 Å and the adsorption energy is as much as −2.28 eV. (ii) In the second stable position, the NO molecule has its N atom adsorbed above an O_s atom, the N-O axis being tilted toward the Ba atom. The N-O_s-Ba angle is then 41.1° while the adsorption energy is only −0.10 eV. At last, the local densities of states around C, O as well as N atoms of the considered adsorbed molecules have also been discussed.     

Comparative study of adsorption characteristics of Cs on the GaN(0001) and GaN(000) surfaces

The adsorption characteristics of Cs on GaN(0001) and GaN(000) surfaces with a coverage from 1/4 to 1 monolayer have been investigated using the density functional theory with a plane-wave ultrasoft pseudopotential method based on first-principles calculations.The results show that the most stable position of the Cs adatom on the GaN(0001) surface is at the N-bridge site for 1/4 monolayer coverage.As the coverage of Cs atoms at the N-bridge site is increased,the adsorption energy reduces.As the Cs atoms achieve saturation,the adsorption is no longer stable when the coverage is 3/4 monolayer.The work function achieves its minimum value when the Cs adatom coverage is 2/4 monolayer,and then rises with Cs atomic coverage.The most stable position of Cs adatoms on the GaN(000) surface is at H3 site for 1/4 monolayer coverage.As the Cs atomic coverage at H3 site is increased,the adsorption energy reduces,and the adsorption is still stable when the Cs adatom coverage is 1 monolayer.The work function reduces persistently,and does not rise with the increase of Cs coverage.     

Comparative study of adsorption characteristics of Cs on the GaN （0001） and GaN （0001） surfaces

The adsorption characteristics of Cs on GaN （0001） and GaN （0001） surfaces with a coverage from 1/4 to 1 monolayer have been investigated using the density functional theory with a plane-wave uttrasoft pseudopotential method based on first-principles calculations. The results show that the most stable position of the Cs adatom on the GaN （0001） surface is at the N-bridge site for 1/4 monolayer coverage. As the coverage of Cs atoms at the N-bridge site is increased, the adsorption energy reduces. As the Cs atoms achieve saturation, the adsorption is no longer stable when the coverage is 3/4 monolayer. The work function achieves its minimum value when the Cs adatom coverage is 2/4 monolayer, and then rises with Cs atomic coverage. The most stable position of Cs adatoms on the GaN （000i） surface is at H3 site for 1/4 monolayer coverage. As the Cs atomic coverage at H3 site is increased, the adsorption energy reduces, and the adsorption is still stable when the Cs adatom coverage is 1 monolayer. The work function reduces persistently, and does not rise with the increase of Cs coverage.