栅网与偏压对CHF3电子回旋共振放电等离子体特性的影响

研究了电子回旋共振等离子体增强化学气相沉积系统中栅网的增加和栅网上施加+60V和-60V偏压对CHF3放电等离子体特性的影响.发现在低微波功率下栅网与偏压对等离子体中基团分布的影响较大,而高微波功率下的影响逐渐减小.这是由于低微波功率下等离子体中电子温度较低,基团的分布同时受栅网鞘电场和电子碰撞分解的共同作用;而高微波功率下电子温度较高,栅网鞘电场的作用减弱,基团分布主要取决于电子碰撞分解作用.     

等离子体化学气相沉积氮化镓薄膜中的N2/TMG等离子体发射光谱分析

对电子回旋共振低温等离子体化学气相沉积工艺(ECR-PECVD)沉积GaN薄膜过程中的氮气和三甲基镓有机金属气体(TMG)混合气体等离子体发射光谱进行分析。结果表明TMG 在等离子体自加热条件下就发生离解,N₂/TMG混合气体ECR等离子体主要以Ga气体粒子和亚稳态氮分子为主。发射光谱特征谱线随微波功率变化分析表明：当微波功率高于400 W时,亚稳态氮分子浓度随着微波功率的增加而增加,而高激发态氮分子以及氮分子离子浓度却随着减少。     

高气压微波氢等离子体发射光谱诊断

在2.45GHz,800W级的高气压微波等离子体放电系统中,通过测量不同微波功率和放电气压下氢等离子体的Balmer线系的发射光谱,从测量的谱线总展宽中卷积去掉具有高斯线形的Doppler展宽和仪器展宽得到谱线的Stark展宽,并通过Stark展宽测量氢等离子体的电子数密度和电场强度。结果表明:等离子体的电子数密度和电场强度随着放电气压的升高都是先增大后减小,随着微波功率的增加呈现逐渐增大的趋势。微波功率为800W时,气压在25kPa时电子数密度和电场强度都达到最大值,等离子体的电子数密度和内部的电场强度分别为3.55×1012cm-3及4.01kV/cm。     

栅网与偏压对CHF3电子回旋共振放电等离子体特性的影响

研究了电子回旋共振等离子体增强化学气相沉积系统中栅网的增加和栅网上施加+60V和-60V偏压对CHF₃放电等离子体特性的影响.发现在低微波功率下栅网与偏压对等离子 体中基团分布的影响较大，而高微波功率下的影响逐渐减小.这是由于低微波功率下等离子体中电子温度较低，基团的分布同时受栅网鞘电场和电子碰撞分解的共同作用；而高微波功率下电子温度较高，栅网鞘电场的作用减弱，基团分布主要取决于电子碰撞分解作用. 关键词： 电子回旋共振放电 3分解')" href="#">CHF₃分解 栅网 偏压     

基于发射光谱的微波等离子化学气相沉积中的电子温度诊断

在气压40～80 Pa和微波功率400～800 W条件下,使用光学发射光谱法(OES)对Ar、CH4等气体产生的等离子体进行电子温度诊断。实验结果表明,OES法测试得到的电子温度介于0.75 eV到4 eV之间。在含碳气体的微波同轴线型等离子体中使用OES方法进行诊断是可行的,这些研究结果可以进一步拓展OES方法在等离子体增强化学气相沉积领域中的应用。     

Langmuir单探针诊断电子回旋共振等离子体参数分布特性

本文采用Langmuir单静电探针法,分析诊断了电子回旋共振等离子体的参数分布特性,并分析了微波功率、气压对轴向、径向等离子体空间分布的影响。在微波功率400W~650W范围内等离子体具有较高的密度及良好的径向均匀性。     

射频偏置ECR-PECVD等离子体参数测量

利用双探针对ECR-PECVD装置中基片在射频偏置下的等离子体参数进行了测量。同时测量了在射频偏置下微波功率、磁场电流、进气量等参数对ECR-PECVD等离子体参数的影响。结果表明,在ECR-PECVD等离子体装置中,基片射频偏置对电子温度有影响,而等离子体密度主要由微波功率所决定。     

分子发射光谱法测量微波等离子体气体温度（英文）

通过OH自由基A~2Σ~+→X~2Π_r电子带系分子发射光谱测温法,实现了对氩气、氮气、空气三种大气压微波等离子体气体温度的测量。探究了不同微波功率、不同气体流量下气体温度的变化规律,测量了氮气、空气微波等离子体羽流的轴向温度分布。实验结果表明,不同工作条件下微波等离子体核心温度普遍超过2 000K,空气微波等离子体可超过6 000K;同样工作条件下三种微波等离子体气体温度满足:T_(Ar)T_N_2T_(Air);气体温度总体上随微波功率增加而小幅增加,随气体流量下降而小幅降低;氮气与空气等离子体羽流温度沿轴向迅速降低。为验证分子发射光谱测温法的准确性,以热电偶测温作为比对,对温度较低的介质阻挡放电氩气等离子体进行了温度测量,实验表明,分子发射光谱法与热电偶所测结果十分接近。     

PSII系统中微波ECR等离子体的朗缪尔探针诊断

用朗缪尔探针对一个新颖的双谐振腔多功能PSII系统的微波ECR等离子体进行了诊断,得出了会切场中工作气体压强和微波功率对等离子体密度和电子温度的影响,及真空室内等离子体的分布。     

低压氢等离子体发光光谱

本实验使用2.45 GHz微波(100～200 W)激励产生低压(1～4 kPa)氢等离子体,通过光纤光谱仪探测氢等离子体的发射光谱,并分析了特征谱线分布及谱线强度随压强、功率的变化情况,计算了氢等离子体的电子激发温度.实验结果表明,压强由1 kPa增加至4 kPa,谱线强度减小;功率由100 W增大至200 W,谱线强度增大.随着压强的增大,电子激发温度减小或先减小后增大.     

核磁共振碳谱研究:烷烃化学位移和(CSS)与分子路径指数矢量(VPM)

系统研究了核磁共振碳谱和化学位移规律及其定量构谱关系(QSSR).本文研究了一组十元素分子路径指数矢量VPM,并发现它与烷烃化学位移和CCS有良好线性相关性.采用多元线性回归进行准确估计与预测,结果优良.     

Reduced s-d model with antiferromagnetically coupled impurity spins

An antiferromagnetic equivalent-neighbour Heisenberg interaction H_i between impurity spins is added to the reduced s-d Hamiltonian H_r previously introduced by simplifying the Kondo s-d exchange Hamiltonian H_K. Asymptotic mean-field theory is developed for H_r + H_i, in the presence and absence of external magnetic field, and applied to (La_1−xCe_x)Al₂ alloys. Specific heat c_i(T) and zero-field susceptibility χ_i(0,T) curves for (La_1−xCe_x)Al₂ are depicted. The coupling constants of H_r + H_i and conduction bandwidth are adjusted so that T_c temperatures for x = 0.2, 0.1 are equal to the experimental values. c_i(T) exhibits a jump at T_c and is decreasing for T < T_c. χ_i(0,T) has a first order pole at T_c which corresponds to the maximum of experimental susceptibility and χ_i(0,0) > 0. These results improve those obtained earlier on the grounds of H_r theory.     

Interrelations of discrete Painlevé equations through limiting procedures

We study the discrete Painlevé equations associated to the affine Weyl group which can be obtained by the implementation of a special limits of -associated equations. This study is motivated by the existence of two -associated discrete both having a double ternary dependence in their coefficients and which have not been related before. We show here that two equations correspond to two different limits of a -associated discrete Painlevé equation. Applying the same limiting procedures to other -associated equations we obtained several -related equations most of which have not been previously derived.     

The ΔNγ electromagnetic transition form factors GM(q) and GE(q)

A parameter-free, nonperturbative calculation of the ΔNγ electromagnetic transition amplitudes GM*(q2), GE*(q2), and the resonant multipole ratio REM(q2)≡E1+3/2(q2)/M1+3/2(q2) is performed in terms of the well-known nucleon isovector Sachs form factor GMV. Our methods are fully relativistic with conservation of the electromagnetic current guaranteed. We find that GM*(q2) decreases more rapidly than the nucleon dipole form factor when −q21 GeV2/c2 and that REM(q2) remains small even for very high four-momentum transfer implying that the perturbative QCD prediction REM(q2)→1 is purely asymptotic and is valid only for extremely high |q2|.     

Determination of Hansen Solubility Parameters for the Solid Surface of Cellulose Acetate Butyrate by Inverse Gas Chromatography

The specific retention volumes, , for adsorption of 21 solute probes on the solid surface of cellulose acetate butyrate (CAB) were determined in the temperature range 343.15 to 403.15 K by inverse gas chromatography (IGC). The weight fraction activity coefficients, , and Flory–Huggins interaction parameters, , were evaluated using . Both and values decreased with increase of temperature in all the solutes. Further, the values increased with increase of chain length in n-alkanes, but in the case of alcohols the trend was reversed. values were less than 0.5 in polar solutes and greater than 0.5 in 1-alkanes and alcohols. The Hansen solubility parameters (HSP) were calculated by relating with the cohesive energy of adsorption of the solutes on the surface of CAB. The adsorption model proposed by Snyder and Karger was used to determine the HSP for the CAB. The dispersive, , polar, , and hydrogen bonding components of HSP decreased with increase of temperature and the relative error associated with these parameters increased with increase of temperature. The characterization of the solid surface of CAB in terms of the three solubility parameter components was analyzed and is discussed.     

The Shapovalov Determinant for the Poisson Superalgebras

Abstract

Among simple ?-graded Lie superalgebras of polynomial growth, there are several which have no Cartan matrix but, nevertheless, have a quadratic even Casimir element C ₂: these are the Lie superalgebra of vector fields on the (1|6)-dimensional supercircle preserving the contact form, and the series: the finite dimensional Lie superalgebra of special Hamiltonian fields in 2k odd indeterminates, and the Kac–Moody version of . Using C ₂ we compute N. Shapovalov determinant for and , and for the Poisson superalgebras associated with . A. Shapovalov described irreducible finite dimensional representations of and ; we generalize his result for Verma modules: give criteria for irreducibility of the Verma modules over and