基于Ni电极和ZrO_2/SiO_2/ZrO_2介质的MIM电容的导电机理研究

研究了基于Ni电极和原子层淀积的ZrO_2/SiO_2/ZrO_2对称叠层介质金属-绝缘体-金属(MIM)电容的电学性能.当叠层介质的厚度固定在14nm时,随着SiO_2层厚度从0增加到2nm,所得电容密度从13.1 fF/μm~2逐渐减小到9.3fF/μm~2,耗散因子从0.025逐渐减小到0.02.比较MIM电容的电流-电压(I-V)曲线,发现在高压下电流密度随着SiO_2厚度的增加而减小,在低压下电流密度的变化不明显,还观察到电容在正、负偏压下表现出完全不同的导电特性,在正偏压下表现出不同的高、低场I-V特性,而在负偏压下则以单一的I-V特性为主导.进一步对该电容在高、低场下以及电子顶部和底部注入时的导电机理进行了研究.结果表明,当电子从底部注入时,在高场和低场下分别表现出普尔-法兰克(PF)发射和陷阱辅助隧穿(TAT)的导电机理;当电子从顶部注入时,在高、低场下均表现出TAT导电机理.主要原因在于底电极Ni与ZrO_2之间存在镍的氧化层(NiO_x),且ZrO_2介质层中含有深浅两种能级陷阱(分别为0.9和2.3 eV),当电子注入的模式和外电场不同时,不同能级的陷阱对电子的传导产生作用.     

高性能涂层材料La2Zr2O7的反射偏振光谱特性

稀土锆酸盐(RE₂Zr₂O₇, RE为稀土元素)体系材料具有热导率低、高温相结构稳定、抗化学腐蚀和价格相对低廉等优势,近年来在热障涂层、环境障涂层和核防护涂层等领域得到广泛而深入的应用,获得了广泛关注。然而,目前对该涂层材料的研究主要还是集中在热学、力学及电学性能等,对光学性能特别是反射光的偏振特性研究则鲜见报道。以锆酸镧(La₂Zr₂O₇)为代表,系统研究了稀土锆酸盐光学偏振特性,特别分析了材料表面属性与光学偏振特性的对应关系。实验中利用固相反应法分别合成制备了La₂Zr₂O₇粉体和致密块体材料,并利用XRD(X-ray diffraction), Raman spectra和SEM (scanning electron microscope)等分析表征其微观结构,结果显示制备的La₂Zr₂O₇材料为立方焦绿石相结构。在光学性能分析中,分别用自然光和线偏振光作为探测光源,在不同探测角下研究其反射光偏振特性。研究表明,对于自然光入射,La₂Zr₂O₇块体和粉体材料的线偏振度（DOLP）与入射光波长呈现显著的依赖关系,随着波长的增加,DOLP呈现出先增大后减小的趋势。值得注意的是在红外波段,DOLP迅速降低并接近于0,表明该材料在红外波段表现出良好的偏振隐身特性。研究还发现,在自然光入射时,致密块体材料的DOLP分别在波长~720和~773 nm出现极大值,且峰值波长对探测角度不敏感,粉体材料在~714和~774 nm附近也出现两个峰。在线偏振光入射,块体材料在大角度探测角下,DOLP在~720和~763 nm出现两个峰,与自然光入射光不同的是,同一个探测角下两个峰的峰值大小基本相同,粉体材料则在~720和~755 nm附近出现两个峰,且峰值强度减弱,说明涂层材料的粗糙度对反射光的偏振特性有一定影响,研究进一步显示,两个峰值对应的波长与探测角无显著依赖关系。本研究结果为稀土锆酸盐涂层材料的偏振光谱学的开发、应用和设计提供理论和实验支撑。     

Energy Spectra,g Factors and Their Pressure-Induced and/or Thermal Shifts of SrTiO3:Cr3+ and SrTiO3:Mn4+ III: R-Line Thermal Shifts of SrTiO3:Mn4+

By taking into account all the irreducible representations and their components in the electron-phonon interaction (EPI) as well as all the levels and the admixtures of basic wavefunctions within d³ electronic configuration, the values of the parameters in the expressions of thermal shift (TS) from EPI for the ground level, R level and R line of SrTiO₃:Mn⁴⁺ have been evaluated; the R-line TS and various contributions to it have been calculated in the low-temperature region. It is found that all the three terms of R-line TS from EPI relevant to the lattice vibration are red shifts. The Raman term is the largest, the neighbor-level term is the second, and the optical-branch term is very small over the range of T≤80 K. The contribution to R-line TS from thermal expansion has been approximately neglected in this work. The very strong EPI relevant to its lattice vibration for SrTiO₃:Mn⁴⁺ causes its R-line TS to be an unusually large red-shift. Only by taking into account the strong softening of the low-frequency acoustic modes of the lattice vibration at low temperatures, can we successfully explain the variation of R-line TS of SrTiO₃$:Mn⁴⁺ with temperature.     

High efficiency giant magnetoresistive device based on two-dimensional MXene (Mn2NO2)

Due to the unique electronic structure of half-metals, characterized by the conductivity of majority-spin and the band gap of minority-spin, these materials have emerged as suitable alternatives for the design of efficient giant magnetoresistive (GMR) devices. Based on the first-principles calculations, an excellent GMR device has been designed by using two-dimensional (2D) half-metal Mn₂NO₂. The results show that Mn₂NO₂ has sandwiched between the Au/nMn₂NO₂ (n = 1, 2, 3)/Au heterojunction and maintains its half-metallic properties. Due to the half-metallic characteristics of Mn₂NO₂, the total current of the monolayer device can reach up to 1500 nA in the ferromagnetic state. At low voltage, the maximum GMR is observed to be 1.15 × 10³¹ %. Further, by increasing the number of layers, the ultra-high GMR at low voltage is still maintained. The developed device is a spintronic device exhibiting the highest magnetoresistive ratio reported theoretically so far. Simultaneously, a significant negative differential resistance (NDR) effect is also observed in the heterojunction. Owing to its excellent half-metallic properties and 2D structure, Mn₂NO₂ is an ideal energy-saving GMR material.     

Electrical properties of ZrO2-In2O3-Y2O3 and its application to a membrane for gas separation

Electrical properties of In₂O₃-doped yttria-stabilized zirconia (In-YSZ) were investigated. The solubility limit of In₂O₃ in YSZ (10 mol% Y₂O₃) is 17.5 mol%. The total conductivity depended on the concentration of In₂O₃. The activation energy of In-YSZ was higher than that of YSZ. From the oxygen partial pressure (P_o2) dependence of the total conductivity of In-YSZ, the electronic conductivity increased with increasing In₂O₃ concentration at low oxygen partial pressures and at high temperature. From the results, we discussed the applicability of In-YSZ to a membrane for hydrogen production from direct water splitting at high temperature.     

Theoretical Calculations of Thermal Shifts of Ground-StateZero-Field-Splitting for Ruby

By taking into account all the irreducible representations and their components in the electron-phonon interaction (EPI) as well as all the levels and the admixtures of wavefunctions within d³ electronic configuration, the thermal shifts (TS) of the ground-state zero-field-splitting (GSZFS) due to EPI for ruby have microscopic-theoretically been calculated; the contribution to TS of GSZFS from thermal expansion has also been calculated. The results are in very good agreement with experiments. It is found that the contributions from the first-order perturbation of the second-order term in EPI Hamiltonian are dominant in the Raman term and optical-branch term for TS of GSZFS; the different between the TS due to EPI of t₂^{3 4}A₂±(1/2) e₂ (G₂) level and the TS due to EPI of t₂^{3 4}A₂±(3/2) e₂ (G₁) level gives rise to the TS due to EPI of GSZFS, which is very small in comparison with the TS due to EPI of G₂ or G₁ level. Among various terms in TS of GSZFS, Raman term is the largest one and the signs of the Raman term and optical-branch term are opposite to the sign of the thermal-expansion term; the optical-branch term plays an important role in TS of GSZFS and increases rapidly with temperature; all various contributions to TS of GSZFS have to be taken into account, since the subtle balance among them determines the total result. The comparison between the features of TS of GSZFS and those of TS of R₁ and R₂ lines has been made. For TS of GSZFS, the contribution from thermal expansion is especially important; the neighbor-level term is insignificant.     

ScF3，NaScF4，(NH4)2NaScF6的可控合成与上转换发光性能的研究

钪基氟化物化学性质稳定、声子能量低、无辐射弛豫概率较低,是一种新型高效的基质材料,并且Sc3+半径较小,能与多种氨羧络合剂形成稳定的螯合物,因而具有更加奇特的物理和化学性质,近年来,成为许多科学家研究的热点。以聚乙烯二胺(PEI)作为表面活性剂,采用水热法在反应温度为200 ℃时成功制备了ScF₃∶Yb3+/Er3+,NaScF₄∶Yb3+/Er3+,(NH₄)₂NaScF₆∶Yb3+/Er3+纳米上转换发光材料。通过X射线衍射仪(XRD)、透射电镜(TEM)、扫描电镜(SEM)和荧光光谱仪对所制备样品的晶相、形貌和发光特性进行了研究,结果显示：通过改变反应物NH₄F和Ln3+的比例(NH₄F/Ln3+=1∶1,2∶1,2.5∶1,3∶1,4∶1,6∶1,10∶1,20∶1,30∶1,40∶1,50∶1)实现了对样品产物、晶相、形貌的控制。当NH₄F/Ln3+为2.5∶1时,生成了纯立方相的ScF₃;在NH₄F/Ln3+为4∶1时,生成了六角相的NaScF₄;在NH₄F/Ln3+为40∶1时,生成了一种纯立方相的新型基质材料(NH₄)₂NaScF₆,样品结晶度高,形貌均一,有正方形片状和足球状多面体;在980 nm红外激光的激发下,不同NH₄F/Ln3+比例生成的样品发光呈现桔黄→桔红→绿→黄绿等多种颜色的变化。实验表明仅改变NH₄F一种原料的用量,就可以生成ScF₃∶Yb3+/Er3+,NaScF₄∶Yb3+/Er3+和(NH₄)₂NaScF₆∶Yb3+/Er3+ 三种不同的产物,说明NH₄F的用量对产物的生成有决定性的作用,对晶相的转换、颜色的调控亦有重要影响。     

Non-Fermi liquid regimes in U1−xMxPd2Al3(M=Y,Th)

The temperature-composition (T–x) phase diagram and NFL characteristics in the electrical resistivity ρ(T), specific heat C(T), and magnetic susceptibility χ(T) at low temperatures for the systems U_1−xM_xPd₂Al₃ (M=Y,Th) are described. The T–x phase diagram, the NFL characteristics, and the underlying mechanism for the NFL behavior are distinctly different for M=Y³⁺ and Th⁴⁺, apparently reflecting the difference in valence of the M atom substituents, and suggesting that U is tetravalent in these two systems.     

基于Au/TiO_2/FTO结构忆阻器的开关特性与机理研究

采用简单的一步水热法在FTO导电玻璃上外延生长了锐钛矿TiO_2纳米线,制备了具有Au/TiO_2/FTO器件结构的锐钛矿TiO_2纳米线忆阻器,系统研究了器件的阻变开关特性和开关机理.结果表明,Au/TiO_2/FTO忆阻器具有非易失的双极性阻变开关特性.同时,在103s的时间内,器件在0.1 V的电阻开关比始终保持在20以上,表明器件具有良好的非易失性.此外,器件在低阻态时遵循欧姆导电特性,而在高阻态时则满足陷阱控制的空间电荷限制电流传导机制,同时提出了基于氧空位导电细丝形成与断开机制的阻变开关模型.研究结果表明Au/TiO_2/FTO忆阻器将是一种很有发展潜力的下一代非易失性存储器.     

氘化对KH2PO4晶体微观缺陷影响的正电子湮没研究

采用传统降温法从不同程度氘化(x=0, 0.51, 0.85)的生长溶液中生长氘化KH₂PO₄(KDP) 晶体, 利用正电子湮没技术(正电子寿命谱和多普勒展宽谱)、结合X射线衍射谱(XRD) 结构分析, 对KDP晶体氘化生长的微观缺陷进行了研究, 讨论了氘化程度对晶体内部微观结构特性、缺陷类型和浓度的影响. XRD结果显示晶胞参数a, b值随氘含量的增加而增加, c值无明显变化; 正电子寿命谱结果发现随着氘化浓度的提高, KDP晶体内部中性填隙缺陷以及氧缺陷不断增加, 引起晶体晶格畸变; 氢空位、K空位、杂质替位缺陷不断发生缔合反应形成复合缺陷, 缺陷浓度不断减少; 团簇、微空洞等大尺寸缺陷也在不断发生聚合反应, 缺陷浓度表现为不断减少. 多普勒实验结果表明随着氘化程度的提升, 晶体内部各类缺陷表现为同步变化. 实验结果表明, KDP晶体在低浓度氘化生长(50%以内)下缺陷反应较弱, 而在高浓度氘化(50%以上)下的缺陷反应显著增强.     

LiCoO2: formation, structure, lithium and oxygen nonstoichiometry, electrochemical behaviour and transport properties

The formation, structure and transport properties of LiCoO₂ are described. LiCoO₂ exhibits two crystal structures, depending on both the preparation method and synthesis temperature. High temperature lithium cobalt oxide (HT-LiCoO₂) has a hexagonal layered structure, while the low temperature oxide (LT-LiCoO₂) has a cubic spinel-related structure. The dependence of the morphological characteristics (grain size, size distribution, crystallinity) of LiCoO₂ on synthesis method as well as their effect on the electrochemical properties are extensively reviewed. As the electrochemical properties and the electrical conductivity strongly depend on the structure of the oxide, primary attention is given to lithium cobalt oxide with defect structure and lithium and oxygen nonstoichiometry.     

SrZn2(PO4)2:Sn2+,Mn2+荧光粉的发光性质及其能量传递机理

采用高温固相法制备了SrZn₂(PO₄)₂:Sn²⁺(SZ₂P:Sn²⁺), SrZn₂(PO₄)₂:Mn²⁺(SZ₂P:Mn²⁺), SrZn₂ (PO₄)₂:Sn²⁺, Mn²⁺(SZ₂P:Sn²⁺, Mn²⁺) 荧光粉. 通过X射线衍射、激发和发射光谱详细研究了荧光粉的物相和发光性质. 在SrZn₂(PO₄)₂ 基质中, Sn²⁺离子发射光谱是峰值位于461 nm宽带谱, 归属于Sn²⁺离子的³P₁→¹S₀能级跃迁, SZ₂P:Mn²⁺激发光谱由基质吸收带(200–300 nm)和位于352, 373, 419, 431和466 nm的一系列激发峰组成, 分别对应Mn²⁺离子的⁶A₁(⁶S)→⁴E(⁴D), ⁶A₁(⁶S)→⁴T₂(⁴D), ⁶A₁(⁶S)→[⁴A₁(⁴G), ⁴E(⁴G)], ⁶A₁(⁶S)→⁴T₂(⁴G)和⁶A₁(⁶S)→⁴T₁(⁴G)能级跃迁, 因此, SZ₂P:Sn²⁺ 的发射光谱与SZ₂P:Mn²⁺的激发光谱有较大范围的重叠. 结果表明Sn²⁺对Mn²⁺发光有明显的敏化作用. 基于Dexter电多极相互作用能量传递公式和Reisfeld近似原理分析, 荧光粉SZ₂P:Sn²⁺, Mn²⁺中Sn²⁺-Mn²⁺离子之间的能量传递机理属于电四极-电四极相互作用引起的共振能量传递, 并计算出Sn²⁺-Mn²⁺离子之间能量传递临界距离R_c ≈ 1.78 nm. 通过改变Sn²⁺, Mn²⁺离子掺杂浓度, 实现了荧光粉发光颜色的调节, 在254 nm短波紫外激发下荧光粉发出较强的蓝白光. 研究结果表明SZ₂P:Sn²⁺, Mn²⁺荧光粉有望应用于紧凑型节能灯照明领域, 随着半导体紫外芯片技术的发展, 有潜力应用于未来的白光发光二极管照明领域.     

N_2-H_2容性耦合等离子体电非对称效应的particle-in-cell/Monte Carlo模拟

H_2-N_2混合气体电容性耦合射频放电在有机低介电系数材料刻蚀中具潜在研究意义.采用paxticle-incell/Monte Carlo模型模拟了双频(13.56 MHz/27.12 MHz)电压源分别接在结构对称的两个电极上的H_2-N_2容性耦合等离子体特征,研究了其电非对称效应.模拟结果表明,通过调节两谐波间的相位角θ,可以改变其电场、等离子体密度、离子流密度的轴向分布及离子轰击电极的能量分布.当相位角θ为0°时,低频电极(晶片)附近主要离子(H_3~+)的密度最小,离子(H_3~+,H_2~+,H~+)轰击低频电极的流密度及平均能量最高;当θ从0°变化90°时,低频电极的自偏压从-103V到106V近似线性增加,轰击电极的离子流密度变化约±18%,H~+离子轰击低频电极的最大能量约减小2.5倍,轰击电极的平均能量约变化2倍,表明氢离子能量和离子流几乎能独立控制.     

Formation of Li2O in a chemically Li-intercalated V2O5 xerogel

We studied the electronic structure of a chemically Li-intercalated V₂O₅ xerogel. The technique used in the study was V 2p and O 1s X-ray absorption spectroscopy (XAS). The V ions in the as-prepared V₂O₅ xerogel are mostly in a pentavalent V⁵⁺ state. The spectra show that the V ions are partially reduced to V⁴⁺ and V³⁺ states upon Li intercalation. The results also show that low Li intercalation (x<1) affects mostly O 2p–V 3d mixed states, whereas for higher Li intercalation (x>1), this mechanism saturates and leads to Li₂O formation.     

Al~(3+)/Mo~(6+)双离子取代ZrV_2O_7中Zr~(4+)/V~(5+)实现近零膨胀

采用固相烧结法制备了Zri_(1-x)Al_(2-x)V_(2-x)Mo_xO_7(0≤x≤0.9),并通过调整Al~(3+)/Mo~(6+)对ZrV_2O_7中的Zr~(4+)/V~(5+)离子替代量来实现近零膨胀,对于较小的x值(x≤0.3),材料保持了与ZrV_2O_7相同的立方相结构.随着Al~(3+)/Mo~(6+)替代量的增加,(Al/Zr)~-和(Mo/V)~+之间的库仑相互作用逐渐加强,这种库仑相互作用导致材料中未发生畸变的立方相晶体结构逐渐减少.当x≥0.7时,材料中立方相晶体结构完全消失.在425-750 K温度区间内,Zr_(0.5)Al_(0.5)M_(0.6)O_7展示出近零膨胀性质(-0.39×l0~(-6)K~(-1)).Zr_(0.5)Al_(1.5)V_(1.5)Mo_(0.5)O_7的低热膨胀性能可能与Al~(3+)/Mo~(6+)对ZrV_2O_7中Zr~(4+)/V~(5+)部分替代引起部分晶体结构发生的畸变及其对未替代部分的晶格结构的影响有关.     

Perpendicular magnetic anisotropy of Pd/Co2MnSi/NiFe2O4/Pd multilayers on F-mica substrates

Pd/Co₂MnSi(CMS)/NiFe₂O₄(NFO)/Pd multilayers were fabricated on F-mica substrate by magnetron sputtering.The best PMA performance of the multilayer structure Pd(3 nm)/CMS(5 nm)/NFO(0.8 nm)/Pd(3 nm)was obtained by adjusting the thickness of the CMS and NFO layers.F-mica substrate has a flatter surface than glass and Si/SiO₂ substrate.The magnetic anisotropy energy density(K_eff)of the sample deposited on F-mica substrates is 0.6711 Merg/cm³(1 erg=10^-7 J),which is about 30%higher than that of the multilayer films deposited on glass(0.475 Merg/cm³)and Si/SiO₂(0.511 Merg/cm³)substrates,and the R_Hall and H_C are also significantly increased.In this study,the NFO layer prepared by sputtering in the high purity Ar environment was exposed to the high purity O₂ atmosphere for 5 min,which can effectively eliminate the oxygen loss and oxygen vacancy in NFO,ensuring enough Co-O orbital hybridization at the interface of CMS/NFO,and thus effectively improve the sample PMA.     

Electrical characterization of low temperature deposited TiO2 films on strained-SiGe layers

Thin films of titanium dioxide have been deposited on strained Si_0.82Ge_0.18 epitaxial layers using titanium tetrakis-isopropoxide [TTIP, Ti(O-i-C₃H₇)₄] and oxygen by microwave plasma enhanced chemical vapor deposition (PECVD). The films have been characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). Dielectric constant, equivalent oxide thickness (EOT), interface state density (D_it), fixed oxide charge density (Q_f/q) and flat-band voltage (V_FB) of as-deposited films were found to be 13.2, 40.6 Å, 6×10¹¹ eV⁻¹ cm⁻², 3.1×10¹¹ cm⁻² and −1.4 V, respectively. The capacitance–voltage (C–V), current–voltage (I–V) characteristics and charge trapping behavior of the films under constant current stressing exhibit an excellent interface quality and high dielectric reliability making the films suitable for microelectronic applications.     

快速吸附与脱附的声表面波H2S传感器

本文主要研究了基于SnO₂/CuO薄膜的声表面波（SAW）传感器（室温下,工作频率约为147.8 MHz）检测H₂S气体的特性。以36°YXLiTaO₃为基片制作声表面波器件,通过采用射频磁控溅射法在其表面淀积SnO₂/CuO的复合薄膜制作出H₂S气体传感器。由场发射电子扫描电镜观察薄膜,薄膜连续均匀且表面分布大量微气孔,因而具有良好的吸附性。然后本文在85℃～205℃范围内对传感器的吸附和脱附速率、灵敏度及选择性等进行了实验研究。实验结果表明,所制备的传感器在较低温度下同时具备快速吸附和脱附特性,工作在190℃时气体吸附和脱附速率最快,检测20ppm H₂S的响应和恢复时间分别为30s、15s;工作在160℃时,传感器检测20ppmH₂S的灵敏度最高,工作频率变化约230 kHz,且对于低浓度2 ppm H₂S,频率变化可达45 kHz。同时,传感器也表现出良好的重复性和选择性。     

Yb-In_2O_3纳米管的制备及其对甲醛的优异气敏性能

采用单管静电纺丝的方法成功制备了纯的与Yb掺杂的In_2O_3纳米管(Yb-In_2O_3).利用扫描电子显微镜和X射线衍射对样品的结构和形貌进行了表征,制作了基于纯In_2O_3和Yb-In_2O_3纳米管的气敏元件.研究表明,Yb-In_2O_3纳米管气敏元件在230℃下对100 ppm甲醛的灵敏度为69.8,是纯In_2O_3纳米管气敏元件对同浓度甲醛灵敏度(18.4)的3.8倍,其对100 ppm甲醛的响应恢复时间分别为4 s和84 s.并且,基于Yb-In_2O_3纳米管的气敏元件对100 ppb甲醛的灵敏度达到2.5.此外,该气敏元件还具有出色的选择性及稳定性,具备良好的实际应用前景.     

微波低温制备Mg2Si0.4Sn0.6-yBiy热电材料的传输机理

德拜弛豫理论表明, 在频率为2.45 GHz的外加交变电磁场的作用下, 微波对极性分子的极化过程约为10^-10 s, 因此利用微波固相反应可以在短时低温条件下制备出纳米粉体材料. 本文以MgH₂代替Mg粉, 利用微波固相反应在低温下制备了Mg₂Si_0.4Sn_0.6-yBi_y (0 ≤y ≤q 0.03)固溶体, 并结合单带抛物线计算模型对其热电传输机理进行了分析. 研究结果表明: 利用该工艺可以有效抑制Mg的挥发和MgO 的生成, 在400 ℃保温15 min内即可完成MgH₂与Si粉和Sn粉的固相反应, 获得片层间距为100 nm的超细化学计量比产物; 杂质Bi的引入可以有效增加载流子浓度, 并引起晶格畸变, 在晶格畸变和样品特有的纳米片层结构的协同作用下, 声子得到有效散射, 样品具有最低的热导率1.36 W·m^-1·K^-1. 较低的有效掺杂率和复杂的能带结构具有降低能带态密度有效质量和减小载流子弛豫时间的双刃效应, 使得本征激发提前, 在600 K样品取得最大ZT值为0.66.