Magnetoresistance of Fe3O4/Au/Fe3O4 and Fe3O4/Au/Fe spin-valve structures

A detailed study of the in-plane magnetotransport properties of spin valves with one and two Fe₃O₄ electrodes is presented. Fe₃O₄/Au/Fe₃O₄ spin valves exhibit a clear anisotropic magnetoresistance in small magnetic fields but no giant magnetoresistance (GMR). The absence of GMR in these structures is due to simultaneous magnetization reversal in the two Fe₃O₄ layers. By contrast, a negative GMR effect is measured on Fe₃O₄/Au/Fe spin valves. The negative GMR is attributed to an electron spin scattering asymmetry at the Fe₃O₄/Au interface or an induced spin scattering asymmetry in the Au interfacial layers.     

Electronic and photovoltaic properties of p-Si/C70 heterojunction diode

Electronic and photovoltaic properties of p-Si/C₇₀ heterojunction diode have been investigated. The ideality factor n and barrier height φ_b values of the diode were found to be 1.86 and 0.69 eV, respectively. The diode indicates a non-ideal current–voltage behaviour due to the ideality factor being higher than unity. This behaviour results from the effect of series resistance and the presence of an interfacial layer. The series resistance R_S and ideality factor n values were determined using Cheng's method and the obtained values are 2.21×10⁵ Ω and 1.86, respectively. The device shows photovoltaic behaviour with a maximum open-circuit voltage of 0.22 V and a short-circuit current of 0.35 μA under 6 mW/cm² light intensity.     

A self-driven photodetector based on a SnS2/WS2 van der Waals heterojunction with an Al2O3 capping layer

Photodetectors based on two-dimensional (2D) materials have attracted considerable attention because of their unique properties. To further improve the performance of self-driven photodetectors based on van der Waals heterojunctions, a conductive band minimum (CBM) matched self-driven SnS₂/WS₂ van der Waals heterojunction photodetector based on a SiO₂/Si substrate has been designed. The device exhibits a positive current at zero voltage under 365 nm laser illumination. This is attributed to the built-in electric field at the interface of the SnS₂ and WS₂ layer, which will separate and transport the photogenerated carriers, even at zero bias voltage. In addition, the Al₂O₃ layer is covered by the surface of the SnS₂/WS₂ photodetector to further improve the performance, because the Al₂O₃ layer will introduce tensile stress on the surface of the 2D materials leading to a higher electron concentration and smaller effective mass of electrons in the films. This work provides an idea for the research of self-driven photodetectors based on a van der Waals heterogeneous junction.     

A field-effect WSe2/Si heterojunction diode

It is significant to develop a heterogeneous integration technology to promote the application of two-dimensional (2D) materials in silicon roadmap. In this paper, we reported a field-effect WSe₂/Si heterojunction diode based on ambipolar 2D WSe₂ and silicon on insulator (SOI). Our results indicate that the device exhibits a p-n diode behavior with a rectifying ratio of ～ 300 and an ideality factor of 1.37. As a photodetector, it has optoelectronic properties with a response time of 0.13 ms, responsivity of 0.045 A/W, detectivity of 4.5×10¹⁰ Jones and external quantum efficiency (EQE) of 8.9 %. Due to the ambipolar behavior of the WSe₂, the rectifying and optoelectronic properties of the heterojunction diode can be modulated by the gate electrical field, enabling various potential applications such as logic optoelectronic devices and neuromorphic optoelectronic devices for in-sensor computing circuits. Thanks to the process based on the mature SOI technique, our field-effect heterojunction diode should have obvious advantages in device isolation and integration.     

Structural and lithium intercalation studies of Mn(0.5−x)CaxTi2(PO4)3 phases (0≤x≤0.50)

Materials from the Mn_(0.5−x)Ca_xTi₂(PO₄)₃ (0≤x≤0.50) solid solution were obtained by solid-state reaction in air at 1000 °C. Selected compositions were investigated by powder X-ray diffraction analysis, ³¹P nuclear magnetic resonance (NMR) spectroscopy and electrochemical lithium intercalation. The structure of all samples determined by Rietveld analysis is of the Nasicon type with the R space group. Mn²⁺/Ca²⁺ ions occupy only the M1 sites in the Ti₂(PO₄)₃ framework. The divalent cations are ordered in one of two M1 sites, except for the Mn_0.50Ti₂(PO₄)₃ phase, where a small departure from the ideal order is observed by XRD and ³¹P MAS NMR. The electrochemical behaviour of Mn_0.50Ti₂(PO₄)₃ and Mn_(0.5−x)Ca_xTi₂(PO₄)₃ phases was characterised in Li cells. Two Li ions can be inserted without altering the Ti₂(PO₄)₃ framework. In the 0≤y≤2 range, the OCV curves of Li//Li_yMn_0.50Ti₂(PO₄)₃ cells show two main potential plateaus at 2.90 and 2.50–2.30 V. Comparison between the OCV curves of Li//Li_(1+y)Ti₂(PO₄)₃ and Li//Li_yMn_0.50Ti₂(PO₄)₃ shows that the intercalation occurs first in the unoccupied M1 site of Mn_0.50Ti₂(PO₄)₃ at 2.90 V and then, for compositions y>0.50, at the M2 site (2.50–2.30 V voltage range). The effect of calcium substitution in Mn_0.50Ti₂(PO₄)₃ on the lithium intercalation is also discussed from a structural and kinetic viewpoint. In all systems, the lithium intercalation is associated with a redistribution of the divalent cation over all M1 sites. In the case of Mn_0.50Ti₂(PO₄)₃, the stability of Mn²⁺ either in an octahedral or tetrahedral environment facilitates cationic migration.     

(NH4)2SO4，NH4NO3和(NH4)2SO4/NH4NO3混合气溶胶吸湿质量增长因子的快速测量方法

气溶胶颗粒的吸湿性决定了其尺寸、浓度、化学组成以及相态,从而显著影响着全球气候、大气异相化学以及人类健康。运用在线、原位、连续扫描衰减全反射傅里叶变换红外光谱（ATR-FTIR）技术, 结合线性湿度（RH）控制系统,实现了RH连续变化条件下气溶胶FTIR-ATR光谱的快速测量。根据水弯曲振动谱带（~1 640 cm-1）峰面积随RH的变化,得到了(NH₄)₂SO₄,NH₄NO₃和(NH₄)₂SO₄/NH₄NO₃混合气溶胶的质量增长因子（MGFs）、潮解点（DRH）和风化点（ERH）。与气溶胶的E-AIM模型预测值相比较,实验结果表现出良好的一致性,证实该方法是一种测量大气气溶胶MGFs,ERH和DRH的快速测量方法。     

单根SnO_2纳米线器件的电输运性能及其机理研究

为探究常态环境下氧空位对单根SnO_2纳米线电输运性能的影响,采用化学气相沉积法合成了SnO_2纳米线,通过光刻微加工技术构筑了Au/单根SnO_2纳米线/Au二端纳米器件.将单根SnO_2纳米器件进行氢化处理,测试其在空气与真空中的伏安特性曲线,发现单根SnO_2纳米线在空气和真空环境中呈现异常不同的电输运特性:在空气中,加偏压注入电子会使通过纳米器件的电流减小,Au电极与SnO_2纳米线之间的接触势垒增大;抽真空后,在偏压的影响下,通过纳米器件的电流增大,Au/SnO_2交界面的接触方式由肖特基接触转变成欧姆接触.实验分析表明,影响单根SnO_2纳米线电输运特性行为的因素与纳米线表面的氧原子吸附与脱吸附所引起的氧空位浓度的变化有关.为进一步分析氧空位浓度变化的作用,利用第一性原理计算方法计算了氧空位浓度对SnO_2纳米线电输运性能的影响,通过分析体系的能带结构、态密度及Au/SnO_2接触界面的I-V曲线和透射谱,发现随着氧空位浓度的增大,SnO_2纳米线的带隙变小.同时,氧空位缺陷使Au/SnO_2接触界面处电子透射率增大,体系电输运能力变强.该研究结果将为集成纳米功能器件的设计提供一种新思路.     

Electronic conduction properties of Au/C60/p-Si and C60/Au/p-Si sandwich structures: I–V and transducer characteristics

Gold-fullerite [C₆₀]-silicon (p-type) sandwich structures have been fabricated in order to investigate intrinsic cross-sectional and planar electronic conductive properties, in particular the C₆₀/p-Si p–n heterojunction. The turn-on voltage of this p–n heterojunction lies in the range 0.25–0.27 V. The I–V characteristics of the Au/C₆₀/p-Si structure are mostly defined by the bulk specific resistance of the fullerite crystal film itself (6×10⁷ Ω cm). I–V curves in the C₆₀/Au/p-Si structure are shown to be ohmic. Au/C₆₀/p-Si sandwiches irradiated with swift (300 MeV) heavy ions, (⁸⁴Kr¹⁴⁺) to a total fluence 10¹⁰ ion/cm² yield structures which are sensitive to ambient air pressure, specifically in the case of a transverse contact configuration, and if one of the contacts is located on the irradiated part of the fullerite film. The sandwich-structure sensitivity to pressure is 5×10⁻⁶ Pa⁻¹. This exceeds the sensitivity of conventional silicon pressure transducers by almost three orders of magnitude.     

在永磁体强磁场中Mn1.2Fe0.8P1-xSix系列化合物热磁发电研究

研究了处于永磁体强磁场中Mn_1.2Fe_0.8P_1-xSi_x 系列化合物的热磁发电性能, 采用高性能球磨和固相烧结合成方法制备了Mn_1.2Fe_0.8P_1-xSi_x 系列化合物, 并对该系列化合物的物相结构、磁性和热磁发电性能进行了测量. 结果表明: Mn_1.2Fe_0.8P_0.37Si_0.63和Mn_1.2Fe_0.8P_0.35Si_0.65化合物是具有Fe₂P型六角结构的一级相变软磁性材料, 两者居里温度分别为334 K和348 K, 处于工业余热温区. 根据一级相变磁性材料在居里温度磁化强度发生突变这一特性, 研制热磁发电演示装置, 测量了Mn_1.2Fe_0.8P_0.37Si_0.63和Mn_1.2Fe_0.8P_0.35Si_0.65这两种材料铁磁相变产生感应电流大小与线圈匝数、热磁发电材料质量、表面积、表面上温度梯度的关系. 研究结果表明, Mn_1.2Fe_0.8P_1-xSi_x系列化合物具有很好的热磁发电性能, 有望成为热磁发电候选材料.     

CuHg_2Ti型Ti_2Cr基合金的电子结构、能隙起源和磁性研究

利用第一性原理计算方法,研究了CuHg2Ti结构下Ti2CrK(K=Sb,Ge,Sn,Sb,Bi)系列合金的电子结构、能隙起源和磁性.研究发现:Ti2CrK(K=Si,Ge)合金是普通半导体材料;Ti2CrK(K=Si,Bi)合金是亚铁磁性半金属材料,其半金属性能隙受到Sb和Bi原子s态的直接影响;Ti2CrSn合金是完全补偿的亚铁磁性半导体.基于Ti2CrSn合金两个自旋方向上的能隙起源不同,通过Si和Ge替换掺杂同族Sn元素调制能隙的宽度,获得了完全补偿亚铁磁性自旋无能隙材料;通过Fe和Mn替换掺杂过渡族Cr元素获得了一系列半金属材料.Ti2Cr1-xFexSn和Ti2Cr1-xMnxSn合金都具有亚铁磁性.所研究的这些半金属性合金的分子磁矩Mtotal与总的价电子数Zt服从Mtotal=Zt-18规则.     

(Cu,N)共掺杂TiO2/MoS2异质结的电子和光学性能:杂化泛函HSE06

在密度泛函理论的基础上,系统地研究了Cu/N（共）掺杂的TiO₂/MoS₂异质结体系的几何结构、电子结构和光学性质.计算发现,TiO₂/MoS₂异质结的带隙相比于纯的TiO₂（101）表面明显变小,Cu/N（共）掺杂TiO₂/MoS₂异质结体系的禁带宽度也明显地减小,这导致光子激发能量的降低和光吸收能力的提高.通过计算Cu/N（共）掺杂TiO₂/MoS₂的差分电荷密度,发现光生电子与空穴积累在掺杂后的TiO₂（101）表面和单层MoS₂之间,这表明掺杂杂质体系可以有效地抑制光生电子-空穴对的复合.此外,我们计算了在不同压力下TiO₂/MoS₂异质结的几何、电子和光学性质,发现适当增加压力可以有效提高异质结的光吸收性能.本文结果表明,Cu/N（共）掺杂TiO₂/MoS₂异质结和对TiO₂/MoS₂异质结加压都能有效地提高材料的光学性能.     

异常双钙钛矿A_2BB′O_6氧化物的多铁性

异常钙钛矿结构氧化物是多铁性材料家族中研究得最为广泛的体系之一.本文从ABO_3钙钛矿结构出发,引入了异常A_2BB′O_6双钙钛矿材料,首先简要介绍了传统及异常A_2BB′O_6双钙钛矿氧化物的结构特点;然后讨论了A_2BB′O_6多铁性材料的研究进展,包括A位为Mn,Ni等过渡金属离子的极性磁体多铁性材料和A_2CoMnO_6(A=Lu,Y,Yb,Lu)以及Mn_2FeSbO_6等第II类多铁性材料;最后,在以上基础上展望了异常A_2BB′O_6双钙钛矿多铁性研究中存在的问题及新型多铁性材料研究的方向.     

基于熔融玻璃的预沉积法生长毫米级单晶MoS2及WS2-MoS2异质结

MoS₂是一种具有优异光电性能和奇特物理性质的二维材料,在电子器件领域具有巨大的应用潜力.高效可控生长出大尺寸单晶MoS₂是该材料进入产业应用所必须克服的重大难关,而化学气相沉积技术被认为是工业化生产二维材料的最有效手段.本文介绍了一种利用磁控溅射预沉积钼源至熔融玻璃上,通过快速升温的化学气相沉积技术生长出尺寸达1 mm的单晶MoS₂的方法,并通过引入WO₃粉末生长出了二硫化钼与二硫化钨的横向异质结(WS₂-MoS₂).拉曼和荧光光谱仪测试表明所生长的样品具有较好的晶体质量.利用转移电极技术制备出了背栅器件样品并对其进行了电学测试,在室温常压下开关比可达10~5,迁移率可达4.53 cm~2/(V·s).这种低成本高质量的大尺寸材料生长方法为二维材料电子器件的大规模应用找到了出路.     

Co掺杂对Mn$lt;sub$gt;3$lt;/sub$gt;Sn$lt;sub$gt;1-$lt;em$gt;x$lt;/em$gt;$lt;/sub$gt;Co$lt;sub$gt;$lt;em$gt;x$lt;/em$gt;$lt;/sub$gt;C$lt;sub$gt;1.1$lt;/sub$gt;化合物的磁性质、熵变以及磁卡效应的影响

利用固态反应法制备了Mn₃Sn_1-xCo_xC_1.1 （x=0.05,0.1,0.2） 系列化合物,研究了Co掺杂对其磁性质、相变、熵变的影响. 随着Co掺杂量的增加,样品的居里温度由283 K先降到212 K （Mn₃Sn_0.9Co_0.1C_1.1） 后又升到332 K （Mn₃Sn_0.2Co_0.8C_1.1）,相变类型由一级相变逐渐转变为二级相变. 增大Co的掺杂量,Mn₃Sn_1-xCo_xC_1.1化合物的熵变峰值逐渐减小,磁熵变温区由9 K展宽到300 K. 当Co掺杂量为0.2时,相对制冷量达到最高,为103 J/kg （磁场强度为1.6 MA/m）. 由于室温附近良好的磁致冷效应,该类材料在磁制冷领域可能具有重要的应用前景. 关键词： 磁性质 相变 磁卡效应 相对制冷量     

Thermoelectric power of Y(Mn1−xAlx)2

Electrical resistivity and thermoelectric power of Y(Mn_1−xAl_x2 and (Y_1−xSc_x)Mn₂ were measured from 2 to room temperature. Anomalous behavior of the thermoelectric power of YMn₂ disappears rapidly with the increase of Al content in Y(Mn_1−xAl_x)₂. Based upon spin fluctuations of the itinerant antiferromagnetism of the samples, the anomaly of the thermoelectric power is discussed.     

铌镁酸铅-钛酸铅铁电阴极电子发射特性

研究了铌镁酸铅-钛酸铅铁电材料的铁电、介电性能对阴极发射阈值电压的影响, 以及铁电阴极发射电流与激励脉冲电压和抽取电压之间的关系, 并分析了其发射机理. 结果表明, 室温介电常数高、极化强度变化量大的弛豫铁电体0.9Pb(Mg_1/3Nb_2/3)O₃-0.1PbTiO₃具有较小的发射阈值电压; 铁电阴极电子发射与快极化反转和等离子体的形成有关; 由极化反转所致电子发射的自发射电流随激励脉冲电压的增大呈幂律增长关系, 其发射电流开始于激励脉冲电压的下降沿; 在抽取电压较大时, 发射电流随抽取电压的增大呈线性增长关系, 说明大电流主要取决于抽取电压; 其发射电流开始于激励脉冲电压的上升沿, 与“三介点”处的场增强效应和等离子体的形成有关; 当抽取电压为2500 V 时, 得到的发射电流幅值为210 A, 相应的电流密度为447 A/cm².     

金衬底调控单层二硫化钼电子性能的第一性原理研究

基于密度泛函的第一性原理研究了金衬底对单层二硫化钼电子性能的调控作用. 从结合能、能带结构、电子态密度和差分电荷密度四个方面进行了深入研究. 结合能计算确定了硫原子层在界面的排布方式, 并指出这种吸附结构并不稳定. 能带结构分析证实了金衬底与单层二硫化钼形成肖特基接触, 并出现钉扎效应. 电子态密度分析表明金衬底并没有影响硫原子和钼原子之间的共价键, 而是通过调控单层二硫化钼的电子态密度增加其导电率. 差分电荷密度分析表明单层二硫化钼的导电通道可能在界面处产生. 研究结果可对单层二硫化钼晶体管的建模和实验制备提供指导.     

基于Au/TiO_2/FTO结构忆阻器的开关特性与机理研究

采用简单的一步水热法在FTO导电玻璃上外延生长了锐钛矿TiO_2纳米线,制备了具有Au/TiO_2/FTO器件结构的锐钛矿TiO_2纳米线忆阻器,系统研究了器件的阻变开关特性和开关机理.结果表明,Au/TiO_2/FTO忆阻器具有非易失的双极性阻变开关特性.同时,在103s的时间内,器件在0.1 V的电阻开关比始终保持在20以上,表明器件具有良好的非易失性.此外,器件在低阻态时遵循欧姆导电特性,而在高阻态时则满足陷阱控制的空间电荷限制电流传导机制,同时提出了基于氧空位导电细丝形成与断开机制的阻变开关模型.研究结果表明Au/TiO_2/FTO忆阻器将是一种很有发展潜力的下一代非易失性存储器.     

基于金纳米棒@二氧化硅表面等离子体共振增强的有机太阳能电池

把包裹SiO₂的金纳米棒（Au NRs@SiO₂）掺杂到有机太阳能电池的活性层中,利用表面等离子体共振效应来增强活性层对光的吸收,从而提高有机太阳能电池的能量转换效率。研究了不同掺杂浓度和不同包裹厚度对电池性能的影响。结果表明,掺杂浓度为1.5%时,器件性能最佳,能量转换效率达到4.02%;SiO₂壳层厚度为3 nm时,转换效率达到4.38%,较标准电池提升了29.2%。     

Yb-In_2O_3纳米管的制备及其对甲醛的优异气敏性能

采用单管静电纺丝的方法成功制备了纯的与Yb掺杂的In_2O_3纳米管(Yb-In_2O_3).利用扫描电子显微镜和X射线衍射对样品的结构和形貌进行了表征,制作了基于纯In_2O_3和Yb-In_2O_3纳米管的气敏元件.研究表明,Yb-In_2O_3纳米管气敏元件在230℃下对100 ppm甲醛的灵敏度为69.8,是纯In_2O_3纳米管气敏元件对同浓度甲醛灵敏度(18.4)的3.8倍,其对100 ppm甲醛的响应恢复时间分别为4 s和84 s.并且,基于Yb-In_2O_3纳米管的气敏元件对100 ppb甲醛的灵敏度达到2.5.此外,该气敏元件还具有出色的选择性及稳定性,具备良好的实际应用前景.