New red Y0.85Bi0.1Eu0.05V1−yMyO4 (M=Nb, P) phosphors for light-emitting diodes

The Y_0.85Bi_0.1Eu_0.05V_1−yM_yO₄ (M=Nb, P) as new near-ultraviolet excited phosphors were synthesized and their luminescence properties under 365 nm excitation were investigated in detail. It indicated that by doping small amount of P⁵⁺ into V⁵⁺ sites, the excitation intensity of charge transfer (CT) band of Bi–O (330–400 nm) was greatly improved. By substituting Nb⁵⁺ for V⁵⁺, both the CT bands of Bi–O and Eu–O (240–320 nm) were significantly enhanced. As a result, the emission intensity of Y_0.85Bi_0.1Eu_0.05V_1−yM_yO₄ (M=Nb, P) could be improved about 90% by doping 5 mol% P⁵⁺ and 110% by doping 5 mol% Nb⁵⁺. Comparing with the commercial Y₂O₂S:Eu³⁺ phosphors, the Y_0.85Bi_0.1Eu_0.05V_0.95M_0.05O₄ (M=Nb, P) phosphors exhibited excellent color purity and much higher brightness. The results showed that these Y_0.85Bi_0.1Eu_0.05V_1−yM_yO₄ (M=Nb, P) phosphors could be considered as promising red phosphors for application in LED.     

Broadly tunable parametric line emission from β-barium borate on pumping with picosecond pulses

Tunable line emission (LE) over a large wavelength region (340–980 nm) is obtained by pumping thick crystals of β-barium borate (BBO) with picosecond pulses at 532 nm. Phenomena of group velocity dispersion, diffraction and phase matching take place simultaneously such that the radiation shows specific features that are characteristic of (i) strongly coupled fundamental and harmonic fields, (ii) amplified phase matched superfluorescence, (iii) conical emission and (iv) four wave mixing.     

Absorption coefficients of O3 at CO2 laser wavelengths

The O₃ absorption coefficients for the rotational lines P(12)–P(28) of the 9.4 μm emission band of the CO₂ laser are presented. Measurements were made in O₃–air dilute mixtures (20–600 ppm) at 25°C and a total pressure of 1013.25 h Pa using a frequency stabilized cw CO₂ laser and values have been determined with greater precision than in previously reported studies.     

Band bending at the Si(1 1 1)–SiO2 interface induced by low-energy ion bombardment

Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(1 1 1)–SiO₂ interface after sub-keV Ar⁺ ion bombardment. The band bending of about 0.5 eV resembles that for Si(1 0 0)–SiO₂, and both interfaces exhibit two kinetic regimes for the evolution of band bending upon annealing due to defects healing. The healing takes place about an order of magnitude more quickly at the (1 1 1) interface, however, probably because of less fully saturated bonding and higher compressive stress.     

Method for independent control of particle size and distance in rhodium epitaxy on TiO2(110)-(1×2) surface An STM study

A method for independent control of the particle size and distance is presented for rhodium epitaxy on TiO₂(110)-(1×2) surface. The real space imaging of the surface morphology was performed by scanning tunneling microscopy. The amount of the deposited rhodium was checked by Auger electron spectrometry. The method consists of two steps: (i) evaporation of 0.001–0.050 ML equivalent of rhodium at room temperature with a post-annealing at 1100 K (“seeding”); (ii) post-deposition of rhodium for growing of the Rh nanoparticles formed in step (i) (“growing”). The mechanism of this procedure is based on the large difference of the surface diffusion coefficient between Rh adatoms and Rh nanocrystallites larger than 1–2 nm. In the first step the average distance between the metal particles is controlled in the range 5–200 nm, the second step determines the particles size (2–50 nm). This work demonstrates that the diffusion processes of metal nanoparticles of different sizes and the growing modes of the crystallites can be studied in detail by application of seeded surfaces.     

Depth dependence of photoluminescence and chemical bonding in porous silicon

Porous silicon (PS) is studied by stepwise peeling of the surface layer to clarify the non-uniformity in the photoluminescence (PL) and correlate it with the in-depth chemical bonding and structure of the 30 μm thick layer. The PL intensity grows by an order of magnitude after the peeling off of the first 10 μm and decreases five times in the next 5 μm while the peak maximum position shifts from 730 to 800 nm. X-ray photoelectron spectroscopy (XPS) measurements show that Si–Si and Si–O bonds are present both on the surface and below, and the preferential oxidation state of silicon changes from 3+ and 4+ on the surface to 1+ and 2+ below 10 μm. Using Raman spectroscopy silicon nanocrystals are shown to exist. Their mean size can be estimated at about 3 nm. These results show that the strongest PL comes from a region in the PS layer where silicon nanocrystallites are surrounded by oxides with a low level of oxidation and not from the strongly oxidized surface layer.     

Simultaneous laser-induced fluorescence and sub-Doppler polarization spectroscopy of the CH radical

The first application of polarization spectroscopy (PS) to the CH radical is demonstrated. In particular, we report on the simultaneous application of laser-induced fluorescence (LIF) and sub-Doppler PS to CH. The conventional experimental setup for PS was supplemented with a second detection system in order to collect the LIF emission. At the same time a Fabry–Perot etalon and molecular iodine were utilized to obtain a precise relative and absolute frequency scale, respectively. CH was investigated in a low pressure methane–oxygen flame. The R₂(5) transition of the B–X (0, 0) band corresponding to a wavelength around 387.3 nm was scanned while fluorescence emission was collected in the spectral region around 431 nm from the B–X (0, 1), A–X (1, 1) and A–X (0, 0) bands. The saturation behavior of both techniques is investigated as well as line broadening effects due to the pump laser pulse energy or rather fluence. Saturation fluence for LIF was found to be more than one order of magnitude higher as compared to PS.     

Study on electroluminescence processes in dye-doped organic light-emitting diodes

Electroluminescence (EL) mechanism of dye-doped organic light-emitting diodes (OLEDs) was investigated by using three familiar fluorescent dyes, i.e., 5,12-Dihydro-5,12-dimethylquino [2,3-b]acridine-7,14-dione (DMQA), 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB), and 5,6,11,12-tetraphenylnaphthacene (Rubrene). EL spectra of the doped devices with structure of indium tin oxide (ITO)/N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′- diamine (NPB) (40 nm)/tris-(8-hydroxyquinolate)-aluminum (Alq₃) (x nm, x=0–40 nm)/dye: Alq₃ (weight ratio≈1%, 2 nm)/Alq₃ (48−x nm)/MgAg indicated that direct carrier trapping (DCT) process dominated light emission of devices. As a result, investigation of carrier-recombination site via doping, which is conventionally applied in OLEDs, is questionable since the doping site and the dopant itself may significantly influence the carrier-recombination process in the doped devices.     

Chemical and structural modifications of laser treated iron surfaces: investigation of laser processing parameters

This study focuses on the chemical, morphological and structural characterization of iron surfaces treated by laser in ambient air. Incorporation of nitrogen over a 1–2 μm thickness (10–30 at.% at the profile maximum) and superficial oxidation on 200–400 nm depth have been evidenced by nuclear reaction analyses. X-ray diffraction at grazing incidence has shown the formation of FeO and Fe₃O₄ oxide phases as well as γ-Fe(N), and ε-Fe_xN for a sufficiently high amount of nitrogen incorporated. Treatments performed with different laser beams indicate that the parameter playing the major role in surface modification processes is the wavelength. Nitrogen incorporation has been found to occur via the interaction of reactive N, present in the laser-induced plasma, and the iron molten bath. The nitriding process is promoted in the IR wavelength range. Oxidation takes place by chemical reaction during the cooling step, and is furthered in the case of UV treatment.     

Study of effects of Mn in CdS nanocrystals

Mn²⁺-doped CdS nanocrystals have been synthesized by adopting an aqueous solution precipitation method. These nanocrystals have been studied using X-ray diffraction (XRD), X-ray fluorescence (XRF), optical absorbance, photoluminescence (PL), DC electrical conductivity measurements and positron annihilation lifetime spectroscopy (PALS). The system has been found to be in the hexagonal phase. PL spectra have been studied on most prominent exciton peaks within the wavelength range (586–731 nm). The emission intensity is found to increase on increasing Mn²⁺ ion concentration (0–5%). Electrical conductivity lies within 0.819×10⁻⁶ to 1.69×10⁻⁶ Ω⁻¹ m⁻¹ and the system shows power law dependence for n=3–3.77. The Cd vacancies concentration has been found to decrease on increasing Mn%.     

Optical properties of InGaN/GaN double quantum wells with varying well thickness

The optical properties and recombination kinetics of the InGaN/GaN double quantum well (DQW) structures with different well thickness (L_w) have been studied by means of photoluminescence (PL), time-resolved PL, and cathodoluminescence (CL) measurements. With increasing quantum well thickness up to 4 nm, the PL emission energy decreases and the blueshift of the PL emission energy increases with increasing excitation density. On the other hand, the PL emission energy of the DQWs with L_w=16 nm is higher than that of the DQWs with L_w=4 nm, and is independent of the excitation density. With increasing L_w from 1 to 4 nm, the PL decay times increase. In contrast, the decay times of 16 nm DQWs are faster than those of 4 nm DQWs. These different results for 16 nm DQWs such as the blueshift of the emission energy, the decrease of the excitation density dependence, and the increase of recombination rate can be ascribed to the relaxation of the piezoelectric field. We also observed the inhomegeneity in the CL spectra of the DQWs with L_w=1 nm on 1 μm scale.     

Effects of substitution of Ti for Fe in BiFeO3 films prepared by sol–gel process

Ti substituted BiFe_1−xTi_xO_3+δ films have been prepared on indium–tin oxide (ITO)/glass substrates by the sol–gel process. The films with x=0.00–0.20 were prepared at an annealing temperature of 600 °C. X-ray diffraction patterns indicate that all films adopt R3m structure and the films with x=0 and 0.10 show pure perovskite phase. Cross-section scanning shows the thickness of the films is about 300 nm. Through 0.05 Ti substitution, the 2P_r increases to 8.30 μC/cm² from 2.12 μC/cm² of the un-substituted BiFeO₃ film and show enhanced ferroelectricity at room temperature. The 2P_r values are 2.63 and 0.44 μC/cm² for the films with x=0.01 and 0.2, respectively. Moreover, the films with x=0.05 and 0.10 show enhanced dielectric property since the permittivity increases near 150 at the same measuring frequency. Through the substitution of Ti, the leakage conduction is reduced for the films with x=0.05–0.20.     

Surface structure evolution during Sb adsorption on Si(1 1 1)–In(4×1) reconstruction

The Sb adsorption process on the Si(1 1 1)–In(4×1) surface phase was studied in the temperature range 200–400 °C. The formation of a Si(1 1 1)–InSb (2×2) structure was observed between 0.5 and 0.7 ML of Sb. This reconstruction decomposes when the Sb coverage approaches 1 ML and Sb atoms rearrange to and (2×1) reconstructions; released In atoms agglomerate into islands of irregular shapes. During the phase transition process from InSb(2×2) to Sb (θ_Sb>0.7 ML), we observed the formation of a metastable (4×2) structure. Possible atomic arrangements of the InSb(2×2) and metastable (4×2) phases were discussed.     

Trajectory-property relationships in MOD-derived YBCO films

A study of the physical and chemical changes during processing in MOD-derived YBCO films was performed. Fully processed films were 70–85% of theoretical density. The sintering rate increased substantially in the compositional range F/Ba = 1.8–1.5. The activation energy for sintering decreased above a P(H₂O) dependent threshold temperature. XRD indicated this temperature/composition threshold also corresponded to YBCO nucleation, suggesting ex situ YBCO forms in contact with a melt. The ramp rate and P(H₂O) were used to control F/Ba trajectories, which were correlated to performance. The nucleation of YBCO was strongly dependent on processing conditions. Nucleation temperature was varied by at least 60 °C in the study. The optimal YBCO nucleation temperature in the 300–800 nm films was around 725 °C. a-axis grains dominated the microstructures of films where YBCO nucleated at <700 °C. Large second phases, but no a-axis grains, were found when the nucleation temperature was >750 °C.     

Coating zinc oxide submicron crystals on poly(methyl methacrylate) chips and spheres via ultrasound irradiation

Ultrasound irradiation is used for anchoring zinc oxide submicron crystals with a main diameter and length of 280 nm and 470 nm, respectively, onto the surface of poly(methyl methacrylate) PMMA chips (2 mm diameter), and zinc oxide crystals with a mean diameter and length of 150 nm and 230 nm, respectively, onto the surface of the PMMA spheres (1–10 μm). The zinc oxide crystals were obtained by sonochemical irradiation of a mixture containing the PMMA, zinc (II) acetate dihydrate, ethanol, water, and 24 wt.% aqueous ammonia for 2 h, yielding a PMMA–zinc oxide composite. By controlling the atmosphere and reaction conditions, we could achieve well-adhered zinc oxide crystals on the surface of poly(methyl methacrylate). The resulting zinc oxide–PMMA composite was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), energy-dispersive X-ray analysis (EDX), high-resolution scanning electron microscopy (HRSEM), and photoluminescence (PL) spectroscopy. The zinc oxide-deposited PMMA chips (loaded with 0.03–1.0 wt.% ZnO) were successfully homogenized in melt by extrusion and then injection molded into small, disc-shaped samples. These samples were analyzed with respect to their directional spectral optical properties in UV, Vis and IR spectroscopy.     

Green and red up-conversion emissions of Er–Yb Co-doped TiO2 nanocrystals prepared by sol–gel method

In this paper, green and red up-conversion emissions of Er³⁺–Yb³⁺ co-doped TiO₂ nanocrystals were reported. The phase structure, particle size and optical properties of Er³⁺–Yb³⁺ co-doped TiO₂ nanocrystals samples were characterized by using X-ray diffraction (XRD), transmission electron microscopy (TEM), UV–vis–NIR absorption spectra and photoluminescence (PL) spectra. Green and red up-conversion emissions in the range of 520–570 nm (²H_11/2, ⁴S_3/2→⁴I_15/2) and 640–690 nm (⁴F_9/2→⁴I_15/2) were observed for the Er³⁺–Yb³⁺ co-doped TiO₂ nanocrystals. The visible up-conversion mechanism and temperature dependence of up-conversion emission for Er³⁺ in TiO₂ nanocrystals were discussed in detail.     

Microstructured silicon surfaces for field emission devices

Enhanced field emission of electrons from silicon surfaces was obtained by surface microstructuring, by means of electrochemical oxidation in organic solutions containing HF. Morphological characterisations showed the formation of cylindrical rods, randomly distributed with relative spacing of a few microns. They are originated at the top of silicon pyramids and have typical diameter in the 100 nm range. Variable length in the 1–50 μm range was obtained, by adjusting the process parameters. Electron field emission properties were characterised for several samples, prepared in different conditions: the emission threshold was found to be strongly correlated with the overall charge exchanged during electrochemical oxidation. In the most favourable conditions, the threshold field for the emission of an electron current I_th = 10⁻¹⁰ A was 11.1 V/μm.     

Structural and optical properties of thermally evaporated Bi2Te3 films

Bi₂Te₃ films were prepared by thermal evaporation technique. X-ray diffraction analysis for as-deposited and annealed films in vacuum at 150 °C were polycrystalline with rhombohedral structure. The crystallite size is found to increase as the film thickness increases and has values in the range 67–162 nm. The optical constants (the refractive index, n, and absorption index, k) were determined using transmittance and reflectance data in the spectral range 2.5–10 μm for Bi₂Te₃ films with different thicknesses (25–99.5 nm). Both n and k are independent on the film thickness in the investigated range. It was also found that Bi₂Te₃ is a high refractive index material (n has values of 4.7–8.8 in the wavelength range 2.5–10 μm). The allowed optical transitions were found to be direct optical transitions with energy gap  eV. The optical conductivities σ₁ = ƒ(hν) and σ₂ = f(hν) show distinct peaks at about 0.13 and 0.3 eV, respectively. These two peaks can be attributed to optical interband transitions.     

Luminescence from γ-irradiated humic acid

This study was conducted to investigate the ultraweak delayed radiochemiluminescence (RCL) spectra, kinetics and spectroscopic properties of humic acids (HAs) after γ-radiation exposure (absorbed doses of 1−10 kGy, Co-60) in model systems.

The kinetics and spectral distribution of RCL (340–650 nm) were measured using the single photon counting (SPC) method and cut-off filters.

The intensity of fluorescence (λ_ex=390, 440, 490 and 540 nm) covering the spectral range 400–580 nm was heavily dependent on the λ_ex and slightly increased with the absorbed dose of γ-radiation.

Absorption spectra (the range 240−800 nm) and color coefficients E_2.6/4 and E_4/6 of irradiated solutions indicated that post-radiative degradation/polymerization processes take place in the HA, changing their macromolecule size or properties.

Comparison of FTIR spectra and elemental analysis proved an increased O and decreased C atoms in irradiated samples. The data indicate on the radiolysis-induced degradation of native HA into fulvic-like acids with higher hydrophilicity and lower molecular size.     

Study of δ-doped GaAs layers by micro-Raman spectroscopy on bevelled samples

Si δ-doped GaAs layers were studied by micro-Raman spectroscopy. The spectra were recorded along the bevelled structure using the light of Ar⁺-ion laser (514.5 nm line) with high power density. The observed changes in the Raman spectra are discussed in the sense of coupling present between LO phonon and photoexcited electron–hole plasma and plasma of electrons arising from ionised Si atoms. Plasmon-LO-Phonon modes of the coupling of photoexcited plasma in δ-doped GaAs layers were observed for the first time. The minimal thickness of cap layer was estimated in the range of 10–19 nm depending on the doping concentration.