B/N掺杂对于石墨烯纳米片电子输运的影响

选用锯齿(zigzag)型石墨烯纳米片为研究对象, Au作为电极, 分子平面与Au的(111)面垂直, 并通过末端S原子化学吸附于金属表面, 构成两种分子器件: 一种是在纳米片的边缘掺杂N(B)原子, 发现电流-电压具有非线性行为, 但是整流系数较小, 特别是掺杂较多时, 整流具有不稳定性; 另一种是用烷链把两个石墨烯片连接, 在烷链附近和石墨烯片的边缘进行N(B)掺杂, 发现在烷链附近掺杂具有较大的整流, 但是掺杂的原子个数和位置会影响整流性能. 研究表明: 整流主要为正负电压下分子能级的移动方向和空间轨道分布不同导致. 部分体系中的负微分电阻现象主要由于偏压导致能级移动和透射峰形态的改变, 并且在某些偏压下主要透射通道被抑制而引起. 关键词： 石墨烯纳米片 电子输运 整流行为 非平衡格林函数方法     

扫描隧道显微镜在单分子科学中的应用

单分子科学是一门新兴的交叉科学,在当前的科技发展中具有重要意义.扫描隧道显微镜是研究单分子的一种强有力而独特的工具.文章以作者所在研究组近年来在单分子表征、操控和原型器件设计等方面的研究工作进展为例,概述了扫描隧道显微镜在单分子科学中的应用,重点介绍了以下成果:在硫醇分子自组装单层膜上观测到C60分子的本征笼状结构,并发现了一种新颖的由C60分子取向产生的拓扑序;结合实验图像和理论模拟,确定了单个C60分子在Si(111)-7×7表面的吸附取向;通过对金属富勒烯分子Dy@C82进行空间和能量分辨成像及相关理论模拟,确定了金属原子相对碳笼的位置及分子的取向;利用扫描隧道显微镜针尖对吸附在Au(111)表面的单个CoPc分子操作"分子手术",以实现其吸附态和自旋态的量子调控;发现了一种由单电子隧穿和C59N分子的特殊能级结构产生的新的整流机制;发现了一种由针尖电子态和CoPc分子中Co原子轨道的空间对称性匹配产生的负微分电阻效应.     

单分子器件电输运中基于量子干涉效应的调控策略

单分子器件电输运中的量子干涉效应是电子在分子独立的轨道能级内传输时因保持量子相干性,从而在不同能级之间发生相互干涉的现象.这种现象导致了电子在单分子器件内透射概率的增加或减小,在实验中体现为单分子器件电导值的升高或降低.近些年,利用量子干涉效应对不同的单分子器件进行调控在实验中被证实是有效的调控手段,如对单分子开关、单分子热电器件、单分子自旋器件等器件性能的调控.本文介绍了量子干涉效应的相关理论与预测、实验观测与证实,以及其在不同单分子器件上的调控作用.     

碳分子线基态特性理论研究

从第一原理出发，利用密度泛函理论B3LYP系统研究了碳分子线Cn（n=3～10）的电子结构特性．对优化结果分析发现，由于离域效应的作用，当n为奇数时，分子线基态为单重态，反之，当n为偶数时，三重态为其稳定的基态．对其电子结构分析可得，随着n的增加，体系能量逐渐降低；同时本文确定了分子线体系最高占据轨道HOMO能量E^H、最低未占据轨道LUMO能量E^L与n的关系式，即En-2^H〈En^H〈En＋2^H，En-2^L〉En^L〉En＋2^L，因而碳分子线的费米能级会表现出特有的奇偶性．该工作将有利于准确认识分子器件的伏安特性，设计出良好性能的分子器件。     

Rubrene作电子传输层的异质结有机太阳能电池

以Rubrene为电子传输层(ETL),制备了结构为ITO/MoO3(5nm)/Rubrene(50nm)/C60(45nm)/Rubrene(0,3,5.5,9.5nm)/Al(130nm)的有机太阳能电池.与没有ETL的器件相比,含5.5nmRubrene的电池的开路电压、填充因子、功率转换效率分别从0.68V,0.488,0.315%增加到0.86V,0.574,0.490%.实验结果分析表明:热的Al原子直接沉积在C60上,破坏了C60层,形成高功函数的C60/Al阴极,弱化内建电场,降低电池性能;当插入ETL后,C60层得到保护,热的Al原子沉积破坏了Rubrene层,形成了缺陷态能级,提高电池的内建电场,促进了电子的传输.进一步的单电子电池实验表明,缺陷态能级低于C60的最低未占据分子轨道.     

单壁碳纳米管单原子空位缺陷的紧束缚理论研究

文章在紧束缚势模型基础上系统地研究了非手性单壁碳纳米管上单原子空位缺陷结构和电子结构性质．计算表明,单原子空位缺陷会自发地形成5-1DB型缺陷,且该缺陷的局域结构和形成能强烈地依赖于碳纳米管的尺寸、旋度和电学性质．同时作者发现这类缺陷在费米能级以上约0．2eV处产生局域的电子态．     

用肖特基电容电压特性数值模拟法确定调制掺杂Al_xGa_(1-x)N/GaN异质结中的极化电荷

研究发展了用肖特基电容 电压特性数值模拟确定调制掺杂AlxGa1 -xN GaN异质结中极化电荷的方法 .在调制掺杂的Al0 2 2 Ga0 78N GaN异质结上制备了Pt肖特基接触 ,并对其进行了C V测量 .采用三维费米模型对调制掺杂的Al0 2 2 Ga0 78N GaN异质结上肖特基接触的C V特性进行了数值模拟 ,分析了改变样品参数对C V特性的影响 .利用改变极化电荷、n AlGaN层掺杂浓度和肖特基势垒高度对C V曲线不同部分位置和形状影响不同 ,可以精确地求取极化电荷面密度 .通过模拟 ,得到Al0 2 2 Ga0 78N厚度为 45nm的调制掺杂Al0 2 2 Ga0 78N GaN异质结界面附近极化电荷面密度为 6 78× 10 1 2 cm- 2 .     

Tl-2212本征约瑟夫森结型负阻器件及负阻放大器

我们利用Tl—2212超导薄膜制作出了的本征约瑟夫森结型负阻器件．对于4μm长3μm宽的微桥型负阻器件，峰值电压为0．09V，峰值电流为1．44mA．谷值电压为0．75V，谷值电流为1．05mA，线性区间内负阻阻值约为-1400Ω利用这种器件．制作了简单的负阻并联式电流放大器．实验证明它确实对信号具有电流放大作用，放大倍数可以通过改变负载电阻的大小来改变．     

生长在p-GaAs衬底上的ZnO基异质结二极管电致发光(英文)

利用等离子体辅助分子束外延在p型砷化镓衬底上制备了ZnO异质结发光二极管。实验表明:GaAs与ZnO之间的氧化镁绝缘层能够有效改善器件光电性能,I-V特性的研究表明该器件具有良好的整流特性,开启电压为3 V,电致发光光谱由一个紫外发光峰和一个可见发光带构成,其来源分别为ZnO层中近带边缺陷以及深能级缺陷相关的辐射复合。     

Ti，C，N在a-Fe基中的合金化效应及对键合性质的影响

基于第一性原理赝势平面波方法研究了合金元素Ti,C,N对a-Fe基电子结构及键合性质的影响,计算了含Ti,C,N的Fe基固溶体的总能量、结合能,分析了态密度、电荷布居数、交叠布居数和电荷密度,从理论上解释了在Fe基中固溶Ti,C,N后其性能改善的原因．结果表明,随着Fe基固溶体中Ti（0-12．5ac％）,C（0—11．11at％）,N（0—11．11at％）含量增加,结合能略有增加;Ti,C,N的固溶使各Fe基固溶体在费米能级处强烈成键,结合能力增强,并且在费米能级附近出现赝能隙,表明固溶体中金属键与共价键共存;随着Ti,C,N含量的增加,C,N分别与Ti,Fe之间的共价键结合强度加强,部分c,N原子会与Ti原子结合形成TiC,TiN颗粒,起到沉积相颗粒强韧化作用．     

Single C59N molecule as a molecular rectifier

We report a new kind of experimental realization of a molecular rectifier, which is based on a single azafullerene C59N molecule in a double-barrier tunnel junction via the single electron tunneling effect. An obvious rectifying effect is observed. The positive onset voltage is about 0.5-0.7 V, while the negative onset voltage is about 1.6-1.8 V. Theoretical analyses show that the half-occupied molecular orbital of the C59N molecule and the asymmetric shift of the molecular Fermi level when the molecule is charged are responsible for the molecular rectification.     

PuH2分子电子结构的DVM研究

关于钚的氢化物的分子结构和分子光谱公开解密的资料与数据甚少.基于密度泛函理论的全数值自洽场计算方法——离散变分方法(DVM)，数值解相对论的Dirac方程，在自由的钚原子和氢原子波函数的数值基及原子能级基础上计算了全电子的PuH2分子电子结构.得到PuH2分子基态最佳参数为键长Pu—H=0208617nm，键角θ°(H—H)=115.011°，轨道总能量为-19838.6630 a.u.，费米能级EF=-12.571eV. 比较了冻芯与非冻芯全电子计算结果.     

Vacancy defects as compensating centers in Mg-doped GaN

We apply positron annihilation spectroscopy to identify V(N)-Mg(Ga) complexes as native defects in Mg-doped GaN. These defects dissociate in postgrowth annealings at 500-800 degrees C. We conclude that V(N)-Mg(Ga) complexes contribute to the electrical compensation of Mg as well as the activation of p-type conductivity in the annealing. The observation of V(N)-Mg(Ga) complexes confirms that vacancy defects in either the N or Ga sublattice are abundant in GaN at any position of the Fermi level during growth, as predicted previously by theoretical calculations.     

Single molecule vibrationally mediated chemistry

Tunnelling electrons may scatter inelastically with an adsorbate, releasing part of their energy through the excitation of molecular vibrations. The resolution of inelastic processes with a low temperature scanning tunnelling microscope (STM) provides a valuable tool to chemically characterize single adsorbates and their adsorption mechanisms. Here, we present a molecular scale picture of single molecule vibrational chemistry, as resolved by STM. To understand the way a reaction proceed it is needed knowledge about both the excitation and damping of a molecular vibration. The excitation is mediated by the specific coupling between electronic molecular resonances present at the Fermi level and vibrational states of the adsorbate. Thus, the two-dimensional mapping of the inelastic signal with an STM provides the spatial distribution of the adsorbate electronic states (near the Fermi level) which are predominantly coupled to the particular vibrational mode observed. The damping of the vibration follows a competition between different mechanisms, mediated via the creation of electron-hole pairs or via anharmonic coupling between vibrational states. This latter case give rise to effective energy transfer mechanisms which eventually may focus vibrational energy in a specific reaction coordinate. In this single-molecule work-bench, STM provides alternative tools to understand reactivity in the limit of low excitation rate, which demonstrate the existence of state-specific excitation strategies which may lead to selectivity in the product of a reaction.     

PuH3分子的几何构型及基态附近势能特征计算

目前还没有关于PuH₃的分子结构和分子光谱公开解密的资料与数据.基于密度泛函理论的全数值自洽场计算方法——离散变分方法(DVM),数值解相对论Dirac方程,在自由的钚原子和氢原子波函数的数值基及原子能级基础上计算了PuH₃分子的不同几何结构及势能曲线.等边三角棱锥形PuH₃分子基态的数据为:Pu-H键长=2.097726Å,键角θ(H-Pu-H)=119.102Å,H-H距离为3.616817Å,轨道总能量为-19869.834a.u.,费米能级E_f=-16.856eV.分析了反演对称等价的分子态以及非质心坐标对轨道总能量的影响.比较了PuH₂和PuH₃分子参数的全电子计算结果.     

Number statistics of molecules formed from ultracold atoms

We calculate the number statistics of a single-mode molecular field excited by photo-association or via a Feshbach resonance from an atomic Bose-Einstein condensate (BEC), a normal atomic Fermi gas, and a Fermi system with pair correlations (BCS state). We find that the molecule formation from a BEC leads for short times to a coherent molecular state in the quantum optical sense. Atoms in a normal Fermi gas, on the other hand, result for short times in a molecular field analog of a classical chaotic light source. The BCS situation is intermediate between the two and goes from producing an incoherent to a coherent molecular field with an increasing gap parameter. This distinct signature of the initial atomic state in the resulting molecular field makes single molecule counting into a powerful diagnostic tool.     

基于石墨烯电极的Co-Salophene分子器件的自旋输运

采用基于非平衡格林函数结合第一性原理的密度泛函理论的计算方法,研究了基于锯齿型石墨纳米带电极的Co-Salophene分子器件的自旋极化输运性质.计算结果表明,当左右电极为平行自旋结构时,自旋向上的电流明显大于自旋向下的电流,自旋向下的电流在[-1V,1V]偏压下接近零,分子器件表现出优异的自旋过滤效应.与此同时,在自旋向上电流中发现负微分电阻效应.当左右电极为反平行自旋结构时,器件表现出双自旋过滤和双自旋分子整流效应.除此之外,整个分子器件还表现出较高的巨磁阻效应.通过分析器件的自旋极化透射谱、局域态密度、电极的能带结构和分子自洽投影哈密顿量,详细解释该分子器件表现出众多特性的内在机理.研究结果对设计多功能分子器件具有重要的借鉴意义.     

Anodic iridium oxide films: An UPS study of emersed electrodes

Formation of anodic iridium oxide films has been monitored using Ultraviolet Photoemission Spectroscopy (UPS) of the emersed electrodes. The potential dependent valence band spectra clearly show the onset of oxide formation at about 0.6 V versus SCE. The density of states at the Fermi level and the positron of the Fermi level with respect to the maximum of the t_2g band of the oxide indicates a transition from metallic to semiconducting behaviour of the oxide. Protonation of the oxide is associated with increased emission from OH species. A linear correlation between electrode potential and workfunction change is observed for the metal as well as for the oxide. Our results confirm known band theory models and provide a fundamental understanding of the electrochromism of anodic iridium oxide films.     

过渡金属W、Mn、V、Ti掺杂二维材料MoSi2N4的第一性原理计算

本文基于密度泛函理论(DFT)的第一性原理计算了W、Mn、V、Ti替位掺杂二维MoSi₂N₄后的几何结构、电子结构以及光学性质的变化.电子结构分析表明W、Mn、W、Ti替位掺杂二维MoSi₂N₄后的禁带宽度分别为1.806 e V、1.003 e V、1.218 e V和1.373 e V;四种过渡金属掺杂后MoSi₂N₄的带隙类型没有发生改变,均为间接带隙半导体;W掺杂后的杂质能级靠近价带顶,费米能级靠近价带顶,为p型半导体,杂质能级为受主能级;Mn掺杂后的杂质能级靠近导带底,费米能级靠近导带底,为n型半导体;V和Ti掺杂后杂质能级位于费米能级附近,为复合中心;光学性质分析表明,在2 e V～4 e V的能量区间内,W掺杂结构的吸收波长为336 nm,体系发生红移;Mn、V和Ti替位掺杂后的吸收波长分别为320 nm、358 nm和338 nm,且掺杂体系均发生蓝移.     

Effects of electron-vibration coupling in transport through single molecules

Using scanning tunneling spectroscopy, we study the transport of electrons through C(60)?molecules on different metal surfaces. When electrons tunnel through a molecule, they may excite molecular vibrations. A fingerprint of these processes is a characteristic sub-structure in the differential conductance spectra of the molecular junction reflecting the onset of vibrational excitation. Although the intensity of these processes is generally weak, they become more important as the resonant character of the transport mechanism increases. The detection of single vibrational levels crucially depends on the energy level alignment and lifetimes of excited states. In the limit of large current densities, resonant electron-vibration coupling leads to an energy accumulation in the molecule, which eventually leads to its decomposition. With our experiments on C(60)?we are able to depict a molecular scale picture of how electrons interact with the vibrational degrees of freedom of single molecules in different transport regimes. This understanding helps in the development of stable molecular devices, which may also carry a switchable functionality.