Formation of Ohmic contacts to n-GaAs using ion beam mixing of Tellurium

Ohmic contacts were formed on n-GaAs using thin evaporated layers of Te followed by bombardment of 100 keV Ar⁺ ions. The specific contact resistance _c showed a strong dependence on the ion dose in the range 10¹⁴ to 10¹⁶ ions cm^–2, with higher doses leading to progressively lower specific contact resistance. The substrate temperature during ion bombardment was varied in the range from 25 to 200° C and was found to have only a minor effect on the resultant values of _c. Elevated temperature aging of the Ohmic contacts at 200° C resulted in a progressive increase in the specific contact resistance, independent of either the ion dose or the substrate temperature used for ion beam mixing. Rutherford backscattering studies (RBS) indicate that the Ohmic contact behaviour was due to the in-diffusion of Te and subsequent formation of a heavily doped n ⁺ layer at the Te-GaAs interface.     

Speed and shape of large-amplitude solitary waves in ion-beam plasma system

Large-amplitude solitary waves are investigated in ion-beam plasma system. The Sagdeev’s pseudopotential is determined in terms of the ion speedu. It is found that there exists a critical value ofu ₀, the value ofu at (u′)² = 0, beyond which the solitary waves cease to exist. The critical value also depends on σ (the ion temperature) or σ_b (the ion beam temperature). One of the author (PC) is grateful to UGC, India for the financial support under SAP(No F.510/8/DRS/2004(SAP-1)).     

Saturable absorbers for passive Q-switching of erbium lasers emitting in the region of 3 μm

The phototropic properties of Fe:ZnSe, Co:ZnSe, and Co:ZnS single crystals have been investigated. It is shown that these crystals can be used to advantage as the saturable absorbers in solid-state erbium lasers emitting in the region of the 3-μm range. The absorption cross sections of the ground states of the Co²⁺ ion in the ZnSe (σ_GSA = 11·10⁻²⁰ cm²) and ZnS (σ_GSA = 5.6·10⁻²⁰ cm²) crystals and of the Fe²⁺ ion in the ZnSe (σ_GSA = 50·10⁻²⁰ cm²) crystal at λ = 2.79 μm were determined experimentally. It has been established that the above-indicated crystals in the excited state absorb light weakly. The use of these crystals as passive Q switches made it possible to realize, for the first time, the regime of Q-switching of a Cr,Er:YSGG laser emitting at a wavelength of 2.79 μm. Single pulses with an energy of 60 mJ and a duration of 170 nsec were obtained in the regime of passive Q-switching. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 747–751, November–December, 2005.     

Implantation of the 111In/Cd Probe as InO− Ion for Radioisotope Tracer Studies

A radioisotope ion implanter has been developed using a cesium-sputtering, negative ion source, which offers versatility and sustained operation. Employing the molecular ¹¹¹In¹⁶O⁻ ion, μCi activities of the radioisotope probe ¹¹¹In/Cd have been implanted into different material hosts. The implanted tracer activity has been shown to be sufficient for LTNO, NMRON and PAC. A new NMRON resonance for ¹¹¹InAg was observed at 75.08 MHz. In₂O₃ powder performed well as the radioisotope carrier in the ion source, with the ratio of radioisotope and parasitic ion current being typically 4 × 10⁻⁴.     

New data for the 197Au(γ, nX) and 197Au(γ, 2nX) reaction cross sections

The results from experimental and theoretical studies of the total and partial cross sections of photoneutron reactions on the ¹⁹⁷Au isotope were analyzed. The cross sections for reactions σ(γ, nX) = σ(γ, n) + σ(γ, np) + … + σ(γ, 2nX) = σ(γ, 2n) + σ(γ, 2np) + … were evaluated in the energy range 7 ≤ E _γ ≤ 30 MeV using an approach free of the shortcomings of experimental photoneutron multiplicity sorting methods. The total photoneutron reaction cross sections σ^exp(γ, xn) = σ^exp(γ, nX) + 2σ^exp(γ, 2nX) + … = σ^exp(γ, n) + σ^exp(γ, np) + 2σ^exp(γ, 2n) + 2σ^exp(γ, 2np) + … were used as the initial experimental data. The contributions from the cross sections σ(γ, nX) and σ(γ, 2nX) to the cross sections σ^exp(γ, xn) were separated using the multiplicity transition functions F ₁ ^theor = σ^theor(γ, 1nX)/σ^theor(γ, xn) and F ₂ ^theor = σ^theor(γ, 2nX)/σ^theor(γ, xn), calculated within an updated version of the pre-equilibrium model of photonuclear reactions. New evaluated data for both partial reaction cross sections, i.e., σ^eval (γ, 1nX) = F ₁ ^theorσ^exp(γ, xn) and σ^eval(γ, 2nX) = F ₂ ^theorσ^exp(γ, xn), were obtained. The cross sections σeval(γ, nX) and σ^eval.(γ, 2nX) evaluated using the theoretically calculated functions F _1,2^theor are consistent with the Livermore data, but substantially contradict the Saclay data.     

Comparison of superconducting and electronic properties of σ-and A-15 phase Nb−Al

For both, the σ-phase and the A-15 phase structure of Nb−Al binary alloys the superconducting properties were investigated in connection with measurements of normal state electronic properties like resistance and NMR-frequency and line width. The A-15 phase shows a transition temperature ofT _c ≈17.5 K. The σ-phase shows only weak transitions at the same temperature which can be explained by A-15 inclusions in a non-superconducting σ-matrix. The Al²⁷-Knight shift at room temperature is reduced from 0.162% for pure Al to (0.024±0.002)% and (0.026±0.0025)% for the A-15 and the σ-phase, respectively. The corresponding temperature coefficients differ in sign: positive for the A-15 and negative for the σ-phase; this may have a relation to the different superconducting properties. The NMR line width and the resistance show no different behaviour for the two phases. In general, the electronic properties seems to be less important for the occurance of superconductivity in the Nb−Al system than the lattice structures.     

Investigation of weak damage in Al0.25Ga0.75As/GaAs by using RBS/C and Raman spectroscopy

The weak damage induced by 0.8 MeV Si ion implantation in the Al_0.25Ga_0.75As films epitaxially grown on GaAs substrates was studied by using Rutherford backscattering spectrometry/channeling (RBS/C) and Raman spectroscopy. RBS/C spectra measured from the implanted samples showed rather low damage level induced by the ion implantation with ion dose from 1×10¹⁴ to 5×10¹⁵ cm⁻². The Raman spectra were measured on these samples. Two kinds of phonon modes, GaAs-like and AlAs-like, are observed, which indicate the existence of multiple phonon vibrational modes in the epitaxial Al_0.25Ga_0.75As films on the GaAs substrate. Compared with the unimplanted sample, the Raman photon peaks for the implanted sample shift gradually to lower energy with the increase of the implantation dose. The strains induced in the implanted layer were also evaluated from the Raman spectra. The result from high resolution double crystal X-ray diffractometry (HRXRD) also verified the evolution of the strains in the implanted layers.     

Temperature dependence of compositional changes of SiO2 surface during ion and electron bombardment

The influence of ion (Ar⁺ 0.5 keV, 2 microA/cm²) and electron (2 keV, 2 mA/cm²) bombardment on the elemental composition of SiO₂ was investigated in the temperature range of 270–790 K. Elemental composition was controlled by AES. It was found that both ion and electron bombardment resulted in an increasing amount of Si₉₂ (elemental silicon) and in decreasing amounts of both O₅₁₀ and Si₇₈ (silicon bound to oxygen). The temperature influence on the composition of SiO₂ is negligible under ion bombardment while the amount of Si₉₂ strongly increases under electron bombardment at temperatures exceeding 600 K. The mechanism of temperature dependence is discussed.     

Absolute cross section of p(<Superscript>7</Superscript>Be,γ)<Superscript>8</Superscript>B using a novel approach

The absolute cross section σ (E) of the radiative capture reaction p(⁷Be,γ)⁸B at the center-of-mass energy E = 992 keV has been measured using a radioactive ⁷Be ion beam and a windowless gas target system filled with H₂ gas. The ⁸B residual nuclides were detected with a recoil separator consisting of momentum and velocity filters and a ΔE-E detector telescope. The ⁸B yield was observed concurrently with the ⁷Be + p elastic scattering yield, relating σ(E) to the Rutherford scattering cross section. The resulting value, σ(E) = 0.41 ± 0.11 μb, leads to an S(E) factor at zero energy of S(0) = 16 ± 4 eV b, in fair agreement with recommended values. Received: 8 February 2000     

AES analysis of nitridation of Si(100) by 2–10 keV N+2 ion beams

Ion beam nitridation of Si(100) as a function of N⁺₂ ion energy in the range of 2–10 keV has been investigated by in-situ Auger electron spectroscopy (AES) analysis and Ar⁺ depth profiling. The AES measurements show that the nitride films formed by 4–10 keV N⁺₂ ion bombardment are relatively uniform and have a composition of near stoichiometric silicon nitride (Si₃N₄), but that formed by 2 keV N⁺₂ ion bombardment is N-rich on the film surface. Formation of the surface N-rich film by 2 keV N⁺₂ ion bombardment can be attributed to radiation-enhanced diffusion of interstitial N atoms and a lower self-sputtering yield. AES depth profile measurements indicate that the thicknesses of nitride films appear to increase with ion energy in the range from 2 to 10 keV and the rate of increase of film thickness is most rapid in the 4–10 keV range. The nitridation reaction process which differs from that of low-energy (< 1 keV) N⁺₂ ion bombardment is explained in terms of ion implantation, physical sputtering, chemical reaction and radiation-enhanced diffusion of interstitial N atoms.     

高能氮离子轰击对四面体非晶碳膜的表面改性和摩擦系数影响的研究

利用过滤阴极真空电弧技术制备了sp³键含量不小于80%的四面体非晶碳(ta-C)膜.利用冷阴极潘宁离子源产生不同能量的氮离子对制备的ta-C薄膜进行轰击,通过X射线光电子能谱和原子力显微镜对薄膜表面结构与形貌进行分析研究.研究表明,随着氮离子的轰击能量的增大,薄膜中的CN键结构略有增大,形成了轻N掺杂;同时,在薄膜表层发生了sp³键结构向sp²键结构的转化;薄膜的表面粗糙度在经过氮离子轰击后从0.2 nm减小至0.18 nm,然后随着轰击能 关键词： 四面体非晶碳 X射线光电子能谱 摩擦系数     

D.C. conductivity of transparent conductive ZnO:Al films in the temperature range 80–360 K

An experimental study of the temperature dependence of the d.c. conductivity σ as a function of temperature T in the range from 80–360 K on nanocrystalline ZnO:Al films (Al³⁺ 2%) of thickness 500 nm prepared on glass microscope slides by a dip — coating method is presented. The electrical conductivity σ, which at room temperature varied between 0.1 to 2.7 S/cm, increased almost linearly with T for all the samples. Measurements of the Hall coefficient at room temperature and in a magnetic field of 1.2 T, gave R_H=0.53 cm³C⁻¹, from which a carrier concentration of n=1.18×10¹⁹ cm⁻³ and a carrier mobility of μ=1.40 cm²/Vs were deduced. Paper presented at the Patras Conference on Solid State Ionics — Transport Properties, Patras, Greece, Sept. 14–18, 2004.     

The origin of thermal hadron production

Multihadron production in high energy collisions, from e⁺e^- annihilation to heavy ion interactions, shows remarkable thermal behaviour, specified by a universal “Hagedorn” temperature. We argue that this hadronic radiation is formed by tunneling through the event horizon of colour confinement, i.e., that it is the QCD counterpart of Hawking-Unruh radiation from black holes. It is shown to be emitted at a universal temperature T_H ≃ (σ/2 π)^1/2, where σ denotes the string tension. Since the event horizon does not allow information transfer, the radiation is thermal “at birth”.     

Tails in harnesses

We consider space- and time-uniformd-dimensional random processes with linear local interaction, which we call harnesses and which may be used as discrete mathematical models of random interfaces. Their components are rea random variablesa _s ^t , wheres ∈ Z ^d andt=0, 1, 2.,... At every time step two events occur: first, every component turns into a linear combination of itsN neighbors, and second, a symmetric random i.i.d. “noise”v is added to every component. For any σ ∈Z _d ⁺ define Δ_σ a′ _s as follows. If σ=(0,...,0), σ=(0,...,0), Δ_σ a _s ^t =a _s ^t . Then by induction, wheree _i is thed-dimensional vector, whoseith component is one and other components are zeros. Denote |σ| the sum of components of σ. Call a real random variable ϕ symmetric if it is distributed as −ϕ. For any symmetric random variable ϕpower decay or P-decay is defined as the supremum of thoser for which therth absolute moment of ϕ is finite. Convergence a.s., in probability and in law whent→∞ is examined in terms of P-decay(v): Ifd=1, σ=0 ord=2, σ=(0,0), Δ_σ a _s ^t diverges. In all the other cases: If P-decay(v)<(d+2)/(d+|σ|), Δ_σ a _s ^t diverges; if P-decay(v)>(d+2)/(d+|σ|), Δ_σ a _s ^t , converges and P-decay(ν) For any symmetric random variable ϕexponential decay or E-decay is defined as the supremum of thoser for which the expectation of exp(|x|^r) is finite. Let E-decay(v)>0. Whenever Δ_σ a _s ^t converges (that is, ifd>2 or |σ|>0: Ifd>2, E-decay(lima _s ^t )=min(E-decay(v),d+2/2); if |σ|=1, E-decay (lim Δ_σ a _s ^t )=min(E-decay(ν),d+2); if |σ| ⩾, E-decay (lim Δ_σ a _s ^t )=E-decay(ν).     

AES investigations of Ar+ ion retention in Si during Ar sputtering

Argon retention in silicon has been studied by AES in the energy range between 1 and 15 keV at bombardment fluences up to ∼10¹⁸ ions/cm². AES data of implanted argon in silicon near the surface region, as obtained during sputtering, can be interpreted qualitatively by a simple model of ion collection. Discrepancies between calculated and measured saturation values of collected argon ions indicate that during implantation at high fluences addition surface effects become important and that the simple model of ion collection has to account for this. Quantitative AES correlated with RBS indicates pronounced concentration gradients of argon in silicon near surface regions.     

Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films

In the present work, post-annealing is adopted to investigate the formation and the correlation of Sb complexes and Zn interstitials in Sb-ion implanted ZnO films, by using Raman scattering technique and electrical characterizations. The damage of Zn sublattice, produced by ion bombardment process is discerned from the unrecovered E2 (L) peak in annealed high Sb+ dose implanted samples. It is suggested that the Zn sublattice may be strongly affected by the introduction of Sb dopant because of the formation of SbZn-2VZn complex acceptor. The appearance of a new peak at 510 cm 1 in the annealed high dose Sb+ implanted samples is speculated to result from (Zn interstitials-O interstitials) Zni-Oi complex, which is in a good accordance with the electrical measurement. The p-type ZnO is difficult to obtain from the Sb+ implantation, however, which can be realized by in-situ Sb doping with proper growth conditions instead.     

Nuclear matter properties in relativistic mean-field model with σ- ω coupling

The σ-ω coupling is introduced phenomenologically in the linear σ-ω model to study the nuclear matter properties. It is shown that not only the effective nucleon mass M^* but also the effective σ meson mass m _σ ^* and the effective ω meson mass m _ω ^* are nucleon-density-dependent. When the model parameters are fitted to the nuclear saturation point, with the nuclear radius constant r ₀ = 1.14 fm and volume energy a ₁ = 16.0 MeV, as well as to the effective nucleon mass M ^* = 0.85M, the model yields m _σ ^* = 1.09m _σ and m _ω ^* = 0.90m _ω at the saturation point, and the nuclear incompressibility K ₀ = 501 MeV. The lowest value of K₀ given by this model by adjusting the model parameters is around 227 MeV. Received: 23 March 2001 / Accepted: 8 June 2001     

Nitrogen implantation in GaAs1−xPx (x=0.4; 0.65)

Nitrogen ions were implanted in GaAs_1−xP_x (x=0.4; 0.65) at room temperature at various doses from 5×10¹² cm⁻² to 5×10¹⁵ cm⁻² and annealed at temperatures from 600°C up to 950°C using a sputtered SiO₂ encapsulation to investigate the possibility of creating isoelectronic traps by ion implantation. Photoluminescence and channeling measurements were performed to characterize implanted layers. The effects of damage induced by optically inactive neon ion implantation on photoluminescence spectrum were also investigated. By channeling measurements it was found that damage induced by nitrogen implantation is removed by annealing at 800°C. A nitrogen induced emission intensity comparable to the intensity of band gap emission for unimplanted material was observed for implanted GaAs_0.6P_0.4 after annealing at 850°C, while an enhancement of the emission intensity by a factor of 180 as compared with an unimplanted material was observed for implanted GaAs_0.35P_0.65 after annealing at 950°C. An anomalous diffusion of nitrogen atoms was found for implanted GaAs_0.6P_0.4 after annealing at and above 900°C.     

Determination of nonlinear σ-ω-ρ model parameters in the relativistic mean-field theory by nuclear-matter properties

The parameters of the σ-ω-ρ model in the relativistic mean-field theory with nonlinear σ-meson self-interaction are determined by nuclear-matter properties, which are taken as those extracted by fits to data based on nonrelativistic nuclear models. The values of the relevant parameters are C _σ ²∼ 94, C _ω ²∼ 32, C _ρ ²∼ 26, b∼ - 0.09, c∼ 1, and the σ-meson mass m _σ∼ 370 MeV, while the value of the calculated nuclear- surface thickness is t∼ 1.4 fm. The field system is shown to be stable, since the σ-meson self-interaction energy is a lower bound in this whole parameter region with positive c. On the other hand, the effective nucleon mass M^* is larger than 0.73M, if the symmetry incompressibility K_s is assumed to be negative and the nuclear-matter incompressibility K₀ is kept less than 300 MeV. Received: 27 June 2001 / Accepted: 5 October 2001     

Ion mixing in Al,Si, and their oxides

The redistribution of thin metallic markers due to ion irradiation was studied by backscattering spectrometry in Al, Al₂O₃, Si, and SiO₂. Marker species were selected for their similar masses and different chemical reactivities with the host media and included Ti, Fe, W, Pt, and Au. It was found that the marker signals are Gaussian and that the variance ² of the marker atom distributions increases linearly with the dose of the irradiation, is insensitive to the temperature of irradiation in the range of 80–300 K, and depends linearly on the nuclear stopping power of the incident ions. The absolute values of ² for Ti, Fe, W, Pt, and Au markers in Al and Al₂O₃, W, and Pt in SiO₂ and W in Si is, within±50 %, of 6.5×10³Å² for 300 keV, 8×10¹⁵ Xe ions/cm². These observations suggest that collisional cascade mixing is a dominant mechanism in this type of impurity-matrix combinations. Only Au and Pt in Si mix at a larger rate: ² for Pt is about 3 and for Au about 5 times larger than ² for all other markers. Lower threshold displacement energies and/or the contribution of processes other than cascade mixing are possible considered reasons. In polycrystalline Al, a rapid migration of Au and Pt atoms throughout the Al layer, similar to grain boundary diffusion, is observed.