Temperature dependence of compositional changes of SiO2 surface during ion and electron bombardment |
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| Authors: | E Žilinskas H Skorobogatas L Pranevicius A Sakalas |
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| Institution: | Kaunas Polytechnical Institute, Kaunas, Lithuanian SSR, USSR;Vilnius State University, Vilnius 232000, Lithuanian SSR, USSR |
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| Abstract: | The influence of ion (Ar+ 0.5 keV, 2 microA/cm2) and electron (2 keV, 2 mA/cm2) bombardment on the elemental composition of SiO2 was investigated in the temperature range of 270–790 K. Elemental composition was controlled by AES. It was found that both ion and electron bombardment resulted in an increasing amount of Si92 (elemental silicon) and in decreasing amounts of both O510 and Si78 (silicon bound to oxygen). The temperature influence on the composition of SiO2 is negligible under ion bombardment while the amount of Si92 strongly increases under electron bombardment at temperatures exceeding 600 K. The mechanism of temperature dependence is discussed. |
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