Propagation and collision of compacton-like kinks in Klein—Gordon lattice system

We study the propagation and collision of the compacton-like kinks in the system of an anharmonic lattice with a double well on-site potential by a direct algebraic method and numerical experiments. It is found that the localization of the compacton-like kinks is related to the nonlinear coupling parameter Cnl and the potential barrier height V0 of the double well potential. The velocity of the propagation of the compacton-like kinks is determined by the linear coupling parameter Cl, the nonlinear coupling parameter Cnl and the localization parameter q. Numerical experiments demonstrate that appropriate Cl is not detrimental to a stable propagation of the compacton-like kinks. However, the collision of compacton-like kinks and anti-kinks in the lattice with comparatively small Cl leads to the emergence of a discrete stationary breather and small amplitude nonlinear oscillation background, while moderate Cl results in the emergence of two deformed kinks with radiating oscillations and lower propagation velocities.     

Lattice Model with Traveling Compactons

We introduce a purely anharmonic lattice model with specific double-well on-site potential, which admits traveling compacton-like solitary wave solutions by the inverse method with the help of Mathematica. By properly choosing the shape of the solitary wave solution of the system, we can calculate the parameters of the specific on-site potential. We also found that the localization of the compacton is related to the nonlinear coupling parameter Cn1 and the potential parameter Vo of the on-site potential, and the velocity of the propagation of the compacton is determined by the localization parameter q and the potential parameter Vo. Numerical calculation results demonstrate that the narrow compacton is unstable while the wide compacton is stable when they move along the lattice chain.     

Moving and Interaction of Compact-like Pulses in Klein-Gordon Lattice System

We study the moving and interaction of the compact-like pulses in the system of an anharmonlc lattice with a double well on-site potential by a direct algebraic method and numerical experiments. It is found that the localization of the compact-like pulse is rClated to the nonlinear coupling parameter Cnl and the potential barrier height Vo of the double well potential. The velocity of the moving compact-like pulse is determined by the linear coupling parameter Cl, the localization parameter q (the nonlinear coupling parameter Cnl) and the potential barrier height Vo.Numerical experiments demonstrate that appropriate Cl is not detrimental to a stable moving of the compact-like pulse.However, the head on interaction of two compact-like pulses in the lattice system with comparatively small Cl leads to the appearance of a discrete stationary localized mode and small amplitude nonlinear oscillation background, while moderate Cl results in the emergence of two moving deformed pulses with damping amplitude and decay velocity and radiating oscillations, and biggish Cl brings on the appearing of four deformed kinks with radiating oscillations and different moving velocities.     

Controlling the collision between two solitons in the condensates by a double-barrier potential

We present an analytical solution of two solitons of Bose-Einstein condensates trapped in a double-barrier potential by using a multiple-scale method.In the linear case,we find that the stable spots of the soliton formation are at the top of the barrier potential and at the region of barrier potential absence.For weak nonlinearity,it is shown that the height of the barrier potential has an important effect on the dark soliton dynamical properties.Especially,in the case of regarding a double-barrier potential as the output source of the solitons,the collision spots between two dark solitons can be controlled by the height of the barrier potential.     

Effect of a barrier potential on soliton dynamical characteristics in condensates

By using the multiple-scale method, this paper analytically studies the effect of a barrier potential on the dynamical characteristics of the soliton in Bose--Einstein condensates. It is shown that a stable soliton is exhibited at the top of the barrier potential and the region of the absence of the barrier potential. Meanwhile, it is found that the height of the barrier potential has an important effect on the dark soliton dynamical characteristics in the condensates. With the increase of height of the barrier potential, the amplitude of the dark soliton becomes smaller, its width is narrower, and the soliton propagates more slowly.     

Novel Woods-Saxon stochastic resonance system for weak signal detection

We propose a joint exponential function and Woods–Saxon stochastic resonance(EWSSR)model.Because change of a single parameter in the classical stochastic resonance model may cause a great change in the shape of the potential function,it is difficult to obtain the optimal output signal-to-noise ratio by adjusting one parameter.In the novel system,the influence of different parameters on the shape of the potential function has its own emphasis,making it easier for us to adjust the shape of the potential function.The system can obtain different widths of the potential well or barrier height by adjusting one of these parameters,so that the system can match different types of input signals adaptively.By adjusting the system parameters,the potential function model can be transformed between the bistable model and the monostable model.The potential function of EWSSR has richer shapes and geometric characteristics.The effects of parameters,such as the height of the barrier and the width of the potential well,on SNR are studied,and a set of relatively optimal parameters are determined.Moreover,the EWSSR model is compared with other classical stochastic resonance models.Numerical experiments show that the proposed EWSSR model has higher SNR and better noise immunity than other classical stochastic resonance models.Simultaneously,the EWSSR model is applied to the detection of actual bearing fault signals,and the detection effect is also superior to other models.     

Linear and Nonlinear Anderson Localization in a Curved Potential

Disorder induced localization in the presence of nonlinearity and curvature is investigated. The time-resolved three-dimensional expansion of a wave packet in a bent cigar shaped potential with a focusing Kerr-like interaction term and Gaussian disorder is numerically analyzed. A self-consistent analytical theory, in which randomness, nonlinearity and geometry are determined by a single scaling parameter, is reported, and it is shown that curvature enhances localization.     

Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination.     

Transmission and Dwell Time Oscillations Caused by Coexistence of Tunneling and Propagating in a Trapezoidal Barrier

Abstract A refined one of our exactly solvable trapezoidal barrier potential model [Thin Solids Films, 414 （2002） 136）] for metal-insulator-metal tunnel junctions has Seen presented. According to the refined model, the longitudinal kinetic energy （ExL） and the effective mass （m^＊L） of the electron8 in the electrode on the left of the barrier distinguish from that on the right. It is found that as ExL is greater than the shorter side of the resultant trapezoidal barrier potential, there will be a coexistence of the tunneling and propagating in the barrier. The results demonstrate that the damped oscillating electron waves localized in the propagating barrier subregion lead to the oscillation and enhancement in the transmission coefficient DT and dwell time TD. For the barrier height φ1=2.6 eV and φ2 = 1.4 eV, the width d=22 A and ExL = 1.0 eV, DT and TD have a maximum of 0.054 and 0.58x10^-15 s at V = 2.04 V and 2.18 V, respectively. This suggests that a real tunneling may be a hybrid.     

A Calculation Approach to Elastic Constants of Crystallines at High Pressure and Finite Temperature

Elastic constants of Na and Li metals are calculated successfully for temperatures up to 350K and pressures up to 30GPa using a scheme without involving any adjustable parameter.Elastic constants are assumed to depend only on an effective pair potential that is only determined by the average interatomic distance.Temperature has an effect on elastic constants by way of charging the equilibrium.The elastic constants can be obtained by fitting the relationship between total energy and strain tensor using the new set of lattice parameters obtained by calculating displacement of atoms at the finite temperature and at a fixed pressure.The relationship between the effective pair potential and the interatiomic distance is fitted by using a series of data of cohesive energy corresponding to lattice parameters.     

Effect of Tunneling Current on Schottky Barrier Height in ZnO Varistors at Low Temperature

On the basis of the Schottky barrier and thermionic emission models, the temperature dependence of barrier height in ZnO varistors is investigated by the I - V characteristics in a wide temperature range from 93 K to 373 K. The obtained barrier height decreases with reducing temperature, which is ascribed to the contribution of tunneling current in measured current. From the proposed equivalent circuit, it is suggested that two current components coexist. One is thermionic emission current, which reflects the thermionic emission barrier height. The other is tunneling current, which appears even at low voltage, especially in low temperature ranges, and thus makes the barrier height obtained from measured current vary with temperature.     

Schottky Barrier Height Inhomogeneity of Ti／n—GaAs Contact Studied by the I—V—T Technique

The current-voltage characteristics of Ti/n-GaAs Schottky diodes measured over a temperature range of 78-299K have been interpreted on the basis of thermionic emission across an inhomogeneous Schottky contact.The experiment shows that the apparent barrier height (φap) increases from 0.437eV at 78K to 0.698eV at room temperature.the plot of φap versus 1/T does not exhibit a simple linear relationship over the whole temperature range,indicating that the barrier height distribution is more complicated than the frequently observed single Gaussian distribution.A new multi-Gaussian distribution model is developed.Our experimental results can be explained by a double Gaussian distribution of the barrier heights.The weight,the mean barrier height,and the standard deviation of the two Gaussian functions are 0.00001 and 0.99999,0.721 and 0.696,0.069 and 0.012eV,respectively.     

Double folding model calculation applied to fusion reactions

The interaction potential between a spherical and a deformed nucleus is calculated within the double-folding model for deformed nuclei. We solve the double folding potential numerically by using the truncated multipole expansion method. The shape, separation and orientation dependence of the interaction potential, fusion cross section and barrier distribution of the system ¹⁶O+¹⁵⁴Sm are investigated by considering the quadrupole and hexadecapole deformations of ¹⁵⁴Sm. It is shown that the height and the position of the barrier depend strongly on the deformation and the orientation angles of the deformed nucleus. These are quite important quantities for heavy-ion fusion reactions, and hence produce great effects on the fusion cross section and barrier distribution.     

Electrical Characteristics of Co/n-Si Schottky Barrier Diodes Using I-V and C-V Measurements

Electrical characteristics of Co/n-Si Schottky barrier diodes are analysed by current- voltage （I- V） and capacitancevoltage （C- V） techniques at room temperature. The electronic parameters such as ideality factor, barrier height and average series resistance are determined. The barrier height 0. 76 eV obtained from the C - V measurements is higher than that of the value 0. 70 eV obtained from the I - V measurements. The series resistance Rs and the ideality factor n are determined from the d ln（ I） /dV plot and are found to be 193.62 Ω and 1.34, respectively. The barrier height and the Rs value are calculated from the H（I） - I plot and are found to be 0.71 eV and 205.95Ω. Furthermore, the energy distribution of the interface state density is determined from the forward bias I - V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density Nss ranges from 6.484×10^11 cm^-2eV^-1 in （Ec - 0.446） eV to 2.801×10^10 cm^-2eV^-1 in （Ec - 0.631） eV, of the Co/n-Si Schottky barrier diode. The results show the presence of a thin interracial layer between the metal and the semiconductor.     

Electronic transport for armchair graphene nanoribbons with a potential barrier

This paper studies the electronic transport property through a square potential barrier in armchair-edge graphene nanoribbon (AGNR). Using the Dirac equation with the continuity condition for wave functions at the interfaces between regions with and without a barrier, we calculate the mode-dependent transmission probability for both semiconducting and metallic AGNRs, respectively. It is shown that, by some numerical examples, the transmission probability is generally an oscillating function of the height and range of the barrier for both types of AGNRs. The main difference between the two types of systems is that the magnitude of oscillation for the semiconducting AGNR is larger than that for the metallic one. This fact implies that the electronic transport property for AGNRs depends sensitively on their widths and edge details due to the Dirac nature of fermions in the system.     

Bloch oscillation and Landau\ben Zener tunnelling in a modulated optical lattice in a photovoltaic photorefractive crystal

We theoretically study the beam dynamical behaviour in a modulated optical lattice with a quadratic potential in a photovoltaic photorefractive crystal.We find that two different Bloch oscillation patterns appear for the excitation of both broad and narrow light beams.One kind of optical Landau–Zener tunnelling also appears upon the Bloch oscillation and can be controlled by adjusting the parameter of the optical lattice.Unlike the case of linear potential,the energy radiation due to Landau–Zener tunnelling can be confined in modulated lattices of this kind.For high input intensity levels,the Landau–Zener tunnelling is suppressed by the photovoltaic photorefractive nonlinearity and a symmetry breaking of beam propagation from the modulational instability appears.     

Transport properties through double-magnetic-barrier structures in graphene

We study electrons tunneling through a double-magnetic-barrier structure on the surface of monolayer graphene.The transmission probability and the conductance are calculated by using the transfer matrix method.The results show that the normal incident transmission probability is blocked by the magnetic vector potential and the Klein tunneling region depends strongly on the direction of the incidence electron.The transmission probability and the conductance can be modulated by changing structural parameters of the barrier,such as width and height,offering a possibility to control electron beams on graphene.     

Localized self-trapping in two-dimensional molecular lattice with interaction between Wannier-Mott excitons and phonon lattice

We investigate the interactions of lattice phonons with Wannier-Mott exciton, the exciton that has a large radius in two-dimensional molecular lattice, by the method of continuum limit approximation, and obtain that the self-trapping can also appear in two-dimensional molecular lattice with a harmonic and nonlinear potential. The exciton effect on molecular lattice does not distort the molecular lattice but only makes it localized and the localization can also react, again through phonon coupling, to trap the energy and prevents its dispersion.     

Thermal activation of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height

This paper investigates the thermal activation behaviour of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height by numerical simulation. The analytical Gaussian distribution model predicted that the I--V--T curves may intersect with the possibility of the negative thermal activation of current, but may be contradictory to the thermionic emission mechanism in a Schottky diode. It shows that the cause of the unphysical phenomenon is related to the incorrect calculation of current across very low barriers. It proposes that junction voltage V_j, excluding the voltage drop across series resistance from the external bias, is a crucial parameter for correct calculation of the current across very low barriers. For correctly employing the thermionic emission model, V_j needs to be smaller than the barrier height Ф. With proper scheme of series resistance connection where the condition of V_j > Ф is guaranteed, I--V--T curves of an inhomogeneous Schottky diode with a Gaussian distribution of barrier height have been simulated, which demonstrate normal thermal activation. Although the calculated results exclude the intersecting possibility of I--V--T curves with an assumption of temperature-independent series resistance, it shows that the intersecting is possible when the series resistance has a positive temperature coefficient. Finally, the comparison of our numerical and analytical results indicates that the analytical Gaussian distribution model is valid and accurate in analysing I--V--T curves only for small barrier height inhomogeneity.     

Electron tunnelling phase time and dwell time through an associated delta potential barrier

The electron tunnelling phase time τP and dwell time τD through an associated delta potential barrier U(x) = ξδ(x) are calculated and both are in the order of 10^-17～10^-16s. The results show that the dependence of the phase time on the delta barrier parameter ξ can be described by the characteristic length lc = h^2/meξ and the characteristic energy Ec=meξ^2/h^2 of the delta barrier, where me is the electron mass, lc and Ec are assumed to be the effective width and height of the delta barrier with lcEc=ξ, respectively. It is found that TD reaches its maximum and τD = τp as the energy of the tunnelling electron is equal to Ec/2, i.e. as lc =λDB, λDB is de Broglie wave length of the electron.