Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process

The first demonstration, to our knowledge, of the creation of ultrabroadband superluminescent light-emitting diodes using multiple quantum-dot layer structure by rapid thermal-annealing process is reported. The device exhibits a 3 dB emission bandwidth of 146 nm centered at 984 nm with cw output power as high as 15 mW at room temperature corresponding to an extremely small coherence length of 6.6 microm.     

High power 1.5 μm integrated superluminescent light source with tilted ridge waveguide

In order to further suppress the F–P lasing and increase the superluminescent power, the tilted ridge waveguide was introduced to the integrated superluminescent device [monolithic integration of the superluminescent diode (SLD) with semiconductor optical amplifier (SOA)[. By this means, high power 1.5 m integrated superluminescent light source has been fabricated without anti-reflection (AR) coating. The F–P oscillations between the two cleaved facets were suppressed successfully compared with the device without ridge waveguide. More than 200 mW peak pulsed power was obtained under quasi-CW condition (0.1 ms pulse width, 10% duty cycle) by co-operation of the two integrated sections. The spectral FWHM is 25 nm.     

Integrated optical Ti:Er:LiNbO3 distributed Bragg reflector laser with a fixed photorefractive grating

For the first time to the authors' knowledge, an integrated optical distributed Bragg reflector laser with a fixed photorefractive grating in LiNbO(3) is demonstrated. Sample preparation, grating fabrication, and laser characteristics are reported. The device is pumped by a fiber pigtailed laser diode (lambda(p) approximately 1480 nm) through the Bragg grating in a double-pass configuration, yielding an emission in the backward direction at lambda=1531.7nm . The laser threshold is 40 mW; as much as 5 mW of output power has been obtained at 110 mW of launched pump power in cw operation.     

大功率短波长InAlGaAs/AlGaAs量子点超辐射发光管

为了满足超辐射发光管的短波长应用,采用InAlGaAs/AlGaAs量子点有源区和干法刻蚀工艺制备了短波长弯曲波导超辐射发光管。在1.6A脉冲电流注入下,器件峰值输出功率为29mW,中心波长为880nm,光谱半高宽为20.3nm。比较了干法刻蚀工艺和湿法腐蚀工艺对超辐射发光管器件性能的影响。在1.6A脉冲电流注入下,湿法腐蚀制备的器件峰值输出功率仅为7mW。与湿法腐蚀相比,干法刻蚀可以精确控制波导形状和参数,降低波导损耗,有效增大器件输出功率。     

Diode-pumped Nd:YAG laser emitting at 899 nm and below

We present what is, to the best of our knowledge, the first diode-pumped Nd:YAG laser emitting at 899 nm and below, based on the (4)F(3/2) - (4)I(9/2) transition, generally used for a 946 nm emission. A power of 630 mW at 899 nm has been achieved in cw operation and 16 mW at 884 nm with a fiber-coupled laser diode emitting 9 W at 808 nm. Intracavity second-harmonic generation in cw mode has also been demonstrated with a power of 100 mW at 450 nm by using a LiB(3)O(5) nonlinear crystal.     

Highly efficient, low-cost femtosecond Cr3+ :LiCAF laser pumped by single-mode diodes

We describe efficient continuous-wave (cw) and cw mode-locked operations of a Cr3+ :LiCAF laser, pumped by inexpensive single spatial mode laser diodes. Up to 280 mW of cw output power was obtained with 570 mW of absorbed pump power, with a corresponding slope efficiency of 54%. Continuous tuning between 765 and 865 nm was demonstrated using a fused silica prism. A semiconductor saturable absorber mirror was used to initiate and sustain stable, self-starting, mode-locked operation. In cw mode locking, the laser produced 72 fs (FWHM) duration pulses, and 1.4 nJ pulse energy, at an average output power of 178 mW. Electrical to optical conversion efficiencies of 7.8% in mode-locked operation and 12.2% in cw operation were demonstrated.     

Passively Mode-Locked Quasi-Three-Level Nd:LuVO4Laser with Semiconductor Saturable Absorber Mirror

We demonstrate a passively a Z-folded resonator. Using device, we achieve stable cw average output power under cw mode-locked Nd：LuVO4 laser operating on the quasi-three-level at 916nm with a semiconductor saturable absorber mirror （SESAM） as the passive mode-locking mode locking with 6.7ps pulse duration at repetition rate of 133 MHz and 88mW the pump power of 17.1 W.     

GaAlAs/GaAs非均匀阱宽多量子阱超辐射发光管材料制备及表征

超辐射发光二极管(SLD)具有不同于半导体激光器和普通发光二极管的优异性能。为了制备高功率半导体超辐射发光管,并且得到比较大的光谱宽度、大的单程增益和抑制电流饱和,我们研究设计了具有850nm辐射波长的GaAlAs/GaAs非均匀阱宽多量子阱超辐射发光二极管结构,采用分子束外延(MBE)方法进行了材料制备。同时利用X射线双晶衍射,变温(10～300K)光致发光(PL)等方法检测分析了外延薄膜的结构和光电特性。在光致发光谱线中我们得到了发射波长850nm的谱峰,谱峰范围跨跃800～880nm,双晶回摆曲线结果显示了设计的结构得到实现。在注入电流140mA时,器件输出光谱的半峰全宽可以达到26nm,室温下连续输出功率达到6mW。     

Diode-pumped Nd:GAGG-LBO laser at 531 nm

We report a green laser at 531 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1062 nm Nd:GAGG laser under in-band diode pumping at 808 nm. A LiB₃O₅ (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 18.5 W, as high as 933 mW of cw output power at 531 nm is achieved. The fluctuation of the green output power was better than 3.5% in the given 4 h.     

AlGaAs短波长超辐射集成光源

设计了一种新型半导体集成光源－－ＡｌＧａＡｓ短波长超辐射集成光源。器件为单量子阱、增益导引的氧化物条形结构，采用直接耦合方式将超辐射发光与光放器集成在一起，在脉冲条件下获得了输出功率为５７ｍＷ的超辐射，谱线宽度ＦＷＨＭ为２０ｎｍ，放大器的增益为２１ｄＢ。     

Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAlGaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quantum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.     

Dual‐wavelength monolithic Y‐branch distributed Bragg reflection diode laser at 671 nm suitable for shifted excitation Raman difference spectroscopy

A dual‐wavelength monolithic Y‐branch distributed Bragg reflection (DBR) diode laser at 671 nm is presented. The device is realized with deeply etched surface DBR gratings by one‐step epitaxy. A maximum optical output power of 110 mW is obtained in cw‐operation for each laser cavity. The emission wavelengths of the device are 670.5 nm and 671.0 nm with a spectral width of 13 pm (0.3 cm⁻¹) and a mean spectral distance of 0.46 nm (10.2 cm⁻¹) over the whole operating range. Together with a free running power stability of ± 1.1% this most compact diode laser is ideally suited as an excitation light source for portable shifted excitation Raman difference spectroscopy (SERDS).     

InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm

According to the InAs/GaAs submonolayer quantum dot active region, we demonstrate a bent-waveguide superluminescent diode emitting at a wavelength of around 970 nm. At a pulsed injection current of 0.5 A, the device exhibits an output power of 24 mW and an emission spectrum centred at 971 nm with a full width at half maximum of 16 nm.     

Optical and continuous-wave characteristics of V-grooved quantum well wire lasers confined by a p-n junction array

Role of the side-wall quantum wells in a V-grooved quantum well wire (QWW) is briefly reviewed by temperature-dependent photoluminescence, and then continuous-wave (cw) characteristics of QWW lasers confined by a p-n junction array are reported. In terms of the effectiveness in current confinement, very high power operation (over 11 mW) and a single longitudinal mode operation up to 8mW are achieved. Room-temperature threshold currents are measured to be 32.5 mA (pulsed) and 47.8 mA (cw) for a 200 m long uncoated cavity. The current- and temperature-tuning rates of the oscillation wavelength are as low as 0.038 nm/mA and 0.17 nm/°C, respectively.     

A novel structure of visible semiconductor lasers

Terraced substrate inner current stripe lasers emitting in the range of 750–780 nm are developed with very simple fabrication processes. The lasers have good performance of cw room temperature, linear light-current output over 30 mW per facet and maintain stable fundamental transverse and longitudinal mode of 2–4 times current threshold. The current threshold of 25 mA under cw room temperature operation has been achieved.     

Efficient cw sodium dimer Raman laser operation in a high-temperature sapphire cell

cw Raman lasing of Na₂ molecules generated in a heated, sealed-off, all-sapphire cell is demonstrated. Being not damaged by highly corrosive alkaline vapours, this type of cell enables operation without buffer gas in contrast to the normal heatpipe operation of these lasers. This allows us to study Raman lasers in alkaline vapours in new regimes and under ideal conditions. With an argon ion pump laser at 488 nm, Raman laser operation at 525 nm with more than 10% efficiency and thresholds below 0.2 mW for a cell without buffer gas (length 9 cm) have been obtained so far. The low thresholds, being a factor of 10 less than for comparable heatpipe operation, gives us the chance to use low-power diode lasers as pump sources and to realize compact reliable Raman laser systems. Received: 17 May 1999 / Published online: 25 August 1999     

Diode-pumped cw Nd:YAG three-level laser at 869 nm

We report for the first time (to our knowledge) a diode-pumped Nd:YAG laser emitting at 869 nm based on the (4)F(3/2)-(4)I(9/2) transition, generally used for a 946 nm emission. Power of 453 mW at 869 nm has been achieved in cw operation with a fiber-coupled laser diode emitting 35.4 W at 809 nm. Intracavity second-harmonic generation in the cw mode has also been demonstrated with power of 118 mW at 435 nm by using a BiB(3)O(6) nonlinear crystal. In our experiment, we used a LiNbO(3) crystal lens to complement the thermal lens of the laser rod, and we obtained good beam quality and high output power stability.     

Continuous-wave, single-frequency, solid-state blue source for the 425-489 nm spectral range

We report a new source of cw, single-frequency radiation in the blue, offering extended tunability and practical powers in a compact, all-solid-state design. The device is based on a green-pumped, cw, singly resonant optical parametric oscillator using MgO-doped stoichiometric lithium tantalate (MgO:sPPLT) as the nonlinear material. By internal second-harmonic generation of the resonant near-infrared signal radiation in a 5 mm BiB(3)O(6) crystal, we generate nearly 450 mW of cw, single-frequency blue power over a tunable range of 425-489 nm with a linewidth of 8.5 MHz and a Gaussian spatial beam profile. The demonstrated wavelength coverage can be further extended by using alternative gratings for the MgO:sPPLT crystal.     

1.55 μm InGaAsP/InP tapered stripe superluminescent diodes with potential optical sensor system applications

We proposed a structure of a 1.55 μm InGaAsP/InP superluminescent diode (SLD) to suppress the lasing action and fabricated laterally tilted multi-quantum well planar buried heterostructure separate confinement heterostructure SLD by using MOCVD and LPE equipments. The fabricated SLD is laterally tilted by 15°. The output power of SLD was 11 mW for 200 mA under pulse driving. The full-width at half-maximum was 42 nm at 200 mA.