308nm准分子激光对C60薄膜的刻蚀特性研究

测量在空气和真空中３０８ｎｍ准分子激光对Ｃ６０薄膜的刻蚀速率和刻蚀阈值，讨论了环境中氧气对刻蚀特性的影响。     

C60薄膜的准分子激光刻蚀及形貌分析

报道了准分子ＸｅＣｌ（３０８ｎｍ）紫外激光刻蚀Ｃ６０膜的实验研究及对刻蚀薄膜的形貌分析。基于形貌分析的结果提出其刻蚀机理。     

新型物理喷束淀积技术制备富勒烯薄膜

建立了一套新型物理喷束淀积装置，并且成功地进行了薄膜制备工作，所制备的薄膜包括Ｃ６０，Ｃ７０，ＰＶＫ，ＰＶＫ／Ｃ６０等薄膜，并测量了物理喷束淀积技术制备得的Ｃ６０薄膜，ＰＶＫ／Ｃ６０混合膜的吸收光谱，荧光光谱，时间分辨率荧光光谱，与Ｃ６０等薄膜的高真空蒸发膜的相应光谱进行了比较，结果表明，物理喷束淀积可以制备具有很好质量的高抗光损伤薄膜，薄膜的荧光衰减特性与蒸发膜有很大差别。采用该法制备的ＰＶＫ／     

掺富勒烯聚苯乙烯薄膜的吸收光谱研究

研究了Ｃ６０和Ｃ７０分别在溶液，聚苯乙烯薄膜两种不同状态下的吸收特性，实验结果表明，Ｃ６０在聚苯乙烯薄膜中的吸收峰相对于在正己烷中峰位红移２～１０ｎｍ，并且发现随着Ｃ６０浓度的增大，薄膜中观察到有形状规则的针状固体物质出现，Ｃ７０在聚苯乙烯薄膜中吸收峰同在甲苯中峰位基本重合，我们认为：Ｃ６０在聚苯乙烯薄膜中是以“微晶”形式存在，而Ｃ７０在聚苯乙烯薄膜中以比Ｃ６０更小的颗粒存在或以单分子形式存在。同     

C60外延薄膜的生长

我们研究了各种淀积参数（衬底温度，沉积速度和薄膜厚度）对Ｃ６０薄膜在云母及ＮａＣｌ衬底上成膜的影响，并在云母（００１）新鲜解理面上成功地制备出了高质量的Ｃ６０外延薄膜，此外，我们还对Ｃ６０薄膜可能的生长过程，薄膜与衬底的取向关系及其缺陷结构进行了一定的讨论。     

离子注入对C60薄膜结构的影响

利用高能离子注入技术系统地研究了不同剂量、不同种类离子注入对Ｃ６０薄膜结构的影响，并利用Ｒａｍａｎ光谱对其结构进行分析．结果表明：中等能量的离子注入会影响Ｃ６０薄膜的结构，使Ｃ６０分子薄膜产生聚合和非晶碳化现象，但上述现象的出现与注入离子的剂量大小有关，并存在一注量阈值，只有在此阈值之上，Ｃ６０薄膜结构才发生改变，研究表明这与注入离子同Ｃ６０分子之间互作用方式有关     

PVK/C_(60)组合体系薄膜的拉曼光谱和荧光光谱研究

我们采用物理喷束淀积技术制备了Ｃ６０、Ｃ７０及聚乙烯咔唑ＰＶＫ／Ｃ６０的混合和分层薄膜，拉曼光谱的测量表明，这种技术所制备的富勒烯薄膜中，富勒烯的笼型结构仍保持完整，而在ＰＶＫ／Ｃ６０组合薄膜中，拉曼光谱及荧光光谱测量表明：在ＰＶＫ和Ｃ６０分子之间存在激发传递过程，在混合膜中，这种激发传递过程要明显强于分层组合薄膜。     

空气对C60薄膜拉曼谱的影响

采用拉曼光谱方法和光学二次谐波方法，观察蒸镀在石英玻璃上的Ｃ６０薄膜在空气中的变化，根据实验中观察的Ｃ６０薄膜１４６９ｃｍ＾－１拉曼谱的演变情况，结合二次谐波的测量结果，初步推断Ｃ６０分子发生了聚合反应和氧化反应。     

C60/C70薄膜在空气中的光致聚合

在空气中用２５３．７ｎｍ紫外光照射Ｃ６０／Ｃ７０薄膜８ｈ,红外光谱测试表明,Ｃ６０／Ｃ７０薄膜产生了光致聚合和氧化。     

准分子激光等离子体开关控制脉宽研究

 利用准分子激光等离子体技术，在紫外预电离XeCl准分子激光器上获得了最短1.58 ns的短脉冲激光输出。实验中分析了聚焦到薄膜表面的光束能量密度对所产生的等离子体密度的影响，并对不同等离子体密度及维持时间情况下脉冲压缩效果进行了讨论，给出了激光器谐振腔在稳定腔及非稳腔两种工作方式下的实验结果。激光器在稳定腔工作时，脉宽可压缩至2.87 ns；采用非稳腔结构时，在脉冲能量不变情况下减小聚焦光斑面积，提高入射到薄膜表面的能量密度，得到了最短1.58 ns的短脉冲激光输出。该技术适用于任何其它准分子器件。     

Pulsed laser deposition—UV laser sources and applications

Progress in material research and processing industry is fueled by the technique of pulsed laser deposition (PLD). High energy excimer lasers enable this technique since every material is amenable to their high photon energies. Spectral properties, temporal pulse and laser beam parameters of state of the art excimer lasers will be compared with frequency converted Nd:YAG lasers. Both quality and longevity of the deposited layers strongly depend on the degree of accuracy achieved in the thin film ablation and subsequent deposition process.     

Pulsed laser deposition of oxide thin films

The pulsed laser deposition (PLD) process was studied in detail during oxide thin film growth by constructing a sophisticated PLD chamber combined with an energy-stable excimer laser. It was revealed that the transmitting laser energy at the entrance view port decreased exponentially with deposition runs, roughly by A e^−0.02x%, where A is the original transmission and x is the run number, and transmission loss could become considerable (up to 90%) in 100 deposition runs. In addition, area of the focused spot on the target was found a function of charging high voltage, which is a parameter of excimer laser operation, even through a slit forming rectangular sharp-edge beam profile. Laser energy density is one of the most important parameter governing grown film properties, and therefore accurate laser energy and spot area calibration is vital for reproducible film growth. In course of this study, the importance of spot area as well as the energy density is discussed in the view of deposition rate.     

Laser-driven metal exchange and preparation of metal phthalocyanine

Two types of laser-driven dry processes for the preparation of metal phthalocyanine are reported. In the first one, laser-driven metal exchange, the excimer laser beam was focused on a copper target, and ablated copper atoms were injected onto a thin film of dilithium phthalocyanine (Li₂Pc). The central metal atoms of Li₂Pc were partially exchanged by copper atoms, and the blue thin film of copper phthalocyanine (CuPc) was obtained after removal of the residual Li₂Pc by the hydrochloric acid treatment. In the second one, direct synthesis using the component organic molecule, CuPc was prepared by the implantation of laser-ablated copper atoms onto a thin film of 1,3-diiminoisoindoline (D I I I).     

Silicon nanowires synthesized by vapor–liquid–solid growth on excimer laser annealed thin gold film

The fabrication of Si nanowires has been demonstrated using excimer laser annealed thin gold film as the catalyst and vapor–liquid–solid (VLS) growth. Au nanoparticles with mean diameters of 12, 13 and 15 nm were formed by excimer laser annealing (ELA) of Au film with thickness of 2.5, 5 and 10 nm, respectively. The results show that the silicon nanowires (SiNWs) with desired diameter can be obtained by controlling the Au film thickness and laser power density.     

光激励C2HCl3原子团对铜薄膜的微细刻蚀

本文主要讨论在由O₂携带的C₂HCl₃气氛中,利用准分子激光对铜薄膜印刷板进行微细刻蚀的机理和实验研究结果。     

用于薄膜沉积的XeCl激基激光器研制

以镀制半导体薄膜、巨磁薄膜、金刚石及其它薄膜,外延生长及后续的光刻,激光与物质的相互作用、等离子体研究为目的,设计、研制了脉冲放电激励的XeCl激基激光器.试验结果表明:激光脉宽18ns,单脉冲能量150mJ,矩形光斑大小2cm×1cm,束散角3mrad,最高重复频率5HZ.与同类激光器相比,具有结构简单、造价低廉、性能稳定等特点.     

Cerium oxide nanoparticles protect primary mouse bone marrow stromal cells from apoptosis induced by oxidative stress

The sintering of a silver (Ag) nanoparticle film by laser beam irradiation was studied using a CW DPSS laser. The laser sintering of the Ag nanoparticle thin film gave a transparent conductive film with a thickness of ca. 10 nm, whereas a thin film sintered by conventional heat treatment using an electronic furnace was an insulator because of the formation of isolated silver grains during the slow heating process. The laser sintering of the Ag nanoparticle thin film gave a unique conductive network structure due to the rapid heating and quenching process caused by laser beam scanning. The influences of the laser sintering conditions such as laser scan speed on the conductivity and the transparency were studied. With the increase of scan speed from 0.50 to 5.00 mm/s, the surface resistivity remarkably decreased from 4.45 × 10⁸ to 6.30 Ω/sq. The addition of copper (Cu) nanoparticles to silver thin film was also studied to improve the homogeneity of the film and the conductivity due to the interaction between the oxidized surface of Cu nanoparticle and a glass substrate. By adding 5 wt% Cu nanoparticles to the Ag thin film, the surface resistivity improved to 2.40 Ω/sq.     

Silicon carbide synthesis with energy pulses

Polycrystalline SiC layers were synthesized through nanosecond pulse heating of thin carbon films deposited on single-crystalline silicon wafers. The samples were submitted to electron beam irradiation (25 keV, 50 ns) at various current densities in vacuum (10^–4mbar) and to XeCl excimer laser pulses (308 nm, 15ns) in air. Rutherford backscattering spectrometry (RBS) showed that in the e-beam annealed samples mixing of the elements at the interface starts at current densities of about 1200 A/cm². The mixed layer thickness increases almost linearly with current density. From the RBS spectra a composition of the intermixed layers close to the SiC compound was deduced. Transmission electron microscopy (TEM) and electron diffraction studies clearly evidenced the formation of SiC polycrystals. Using the XeCl excimer laser, intermixing of the deposited C film with the Si substrate was observed after a single 0.3 J/cm² pulse. Further analysis evidenced the formation of SiC nanocrystals, embedded in a diamond film.