Y-Cu共掺杂ZnO电子结构与光学性质的第一性原理计算

采用基于密度泛函理论(DFT)的第一性原理平面波赝势法研究了本征ZnO、Y和Cu单掺杂ZnO、Y-Cu共掺杂ZnO的电子结构和光学性质. 计算结果表明, 在本文的掺杂浓度下, Y和Cu单掺杂可以提高ZnO的载流子浓度, 从而改善ZnO的导电性, Y-Cu共掺时ZnO半导体进入简并状态, 呈现金属性. Y 掺杂ZnO可以提高体系在紫外区域的吸收, 而Cu掺杂ZnO在可见光和近紫外区域发生吸收增强现象, 其中由于Y离子和Cu离子之间的协同效应, Y-Cu共掺杂ZnO时体系对可见光和近紫外区域的光子能量吸收大幅增加, 因此Y-Cu共掺杂ZnO可以用于制作光电感应器件.     

Mn掺杂GaN的电子结构及光学性质

采用基于密度泛函理论(DFT)的第一性原理平面波赝势法(PWP)计算Mn掺杂GaN(Ga1-xMnN)晶体的电子结构及光学性质,详细讨论掺杂后电子结构的变化.计算表明,Mn掺杂GaN使得Mn 3d与N 2p轨道杂化,产生自旋极化杂质带,Ga1-xMnxN表现为半金属性,非常适于自旋注入,说明该种材料是实现自旋电子器件的理想材料.另结合实验结果分析掺杂后体系的光学性质,发现吸收谱在1.3 eV处出现吸收峰,吸收系数随Mn2+浓度增加而增大.分析表明,该峰是源于Mn2+离子e态与t2态间的带内跃迁.     

电场和应力作用下氮钝化扶手型氧化锌纳米带的电子结构和磁特性

采用密度泛函理论(DFT)方法,在LDA+U水平下详细研究了电场和应力作用下氮钝化扶手型氧化锌纳米带(NA8-ZnONRs)的电子结构和磁特性。对体系的电子结构和磁性进行详细的计算,结果表明：本征扶手型氧化锌纳米带(A8-ZnONRs)是无磁性P型半导体。氮钝化后NA8-ZnONRs具有铁磁金属性,其磁性主要来源于N2p轨道(2.56μ_B)和O2p轨道(0.69μ_B)电子的自旋极化,总磁矩为3.21μ_B。NA8-ZnONRs体系对X方向电场有较强的响应,通过调节X方向电场的幅度,可以有效调节体系的磁矩。在X方向电场作用下体系仍具有铁磁金属性,磁性也主要来源于N2p和O2p轨道电子的自旋极化。施加X方向应力作用后,体系仍表现为铁磁金属性。与NA8-ZnONRs纳米带磁矩相比,体系的总磁矩均发生了较大幅度的增长,表明体系对应力作用具有较明显的相应。但随着应力幅度的调节,总磁矩的变化较平坦。表明施加应力可以有效调节体系的磁矩,但在较小应力范围内,体系对应力变化的相应不明显。     

Co-Y共掺杂ZnO光电性质的第一性原理计算

采用基于密度泛函理论(DFT)的第一性原理平面波赝势法研究了本征ZnO、Co和Y单掺杂ZnO、Co-Y不同配位共掺杂ZnO的电子结构和光学性质。计算结果表明,在本文的掺杂浓度下,Co和Y单掺杂可以提高ZnO的载流子浓度,从而改善ZnO的导电性,Co-Y共掺时ZnO半导体进入简并状态,呈现金属性。Co掺杂ZnO会在可见光和近紫外区域发生吸收增强现象,而Y掺杂ZnO可以提高体系在紫外区域的吸收,其中由于Co离子和Y离子之间的协同效应,Co-Y共掺ZnO时体系对可见光和近紫外区域的光子能量吸收大幅增加,因此Co-Y共掺杂ZnO可以用于制作光电感应器件。     

Co-Y共掺杂ZnO光电性质的第一性原理计算

采用基于密度泛函理论(DFT)的第一性原理平面波赝势法研究了本征ZnO、Co和Y单掺杂ZnO、Co-Y不同配位共掺杂ZnO的电子结构和光学性质。计算结果表明,在本文的掺杂浓度下,Co和Y单掺杂可以提高ZnO的载流子浓度,从而改善ZnO的导电性,Co-Y共掺时ZnO半导体进入简并状态,呈现金属性。Co掺杂ZnO会在可见光和近紫外区域发生吸收增强现象,而Y掺杂ZnO可以提高体系在紫外区域的吸收,其中由于Co离子和Y离子之间的协同效应,Co-Y共掺ZnO时体系对可见光和近紫外区域的光子能量吸收大幅增加,因此Co-Y共掺杂ZnO可以用于制作光电感应器件。     

铜(Ⅱ)氮氧自由基配合物铁磁耦合机理的理论研究

用密度泛函理论结合对称性破损态方法对氮氧双自由基以及铜(Ⅱ)-氮氧自由基配合物的磁耦合常数进行了计算.结果表明铜(Ⅱ)-氮氧自由基配合物为铁磁耦合.对配合物磁轨道进行了分析,表明体系的铁磁耦合作用主要来自于Cu离子的轨道与自由基的π^*轨道正交.自旋密度分布分析显示:在氮氧自由基与金属铜两个自旋耦合片的自旋耦合主要来自于中心Cu离子的轨道电子向氮氧自由基上的π^*轨道的电子转移,这一电子特征的变化引起的自旋离域在Cu离子和氮氧自由基片的铁磁耦合中起到了重要的作用.     

砷掺杂的ZnO纳米线的发光特性

在GaAs基底上制备了高质量的直径为10～100 nm、长度约几个微米的As掺杂ZnO纳米线. 扫描电镜、EDX分析及透射电镜分析显示, ZnO纳米线具有较好的晶态结构. 对As掺杂前后的ZnO纳米线进行光学特性测量, 结果表明, ZnO纳米线在385 nm处有较强的紫外发光峰, 在505 nm左右有较弱的蓝绿发光峰; As掺杂较大地改变了ZnO纳米线的发光性质, 使本征发光峰移到393 nm处, 蓝绿发光强度有了很大程度的提高.     

草酸根桥联双核铜(Ⅱ)体系的磁耦合机理

应用密度泛函理论,采用对称性破损方法分析了草酸根桥联双核铜(Ⅱ)体系的磁耦合机理。在该双核体系中,两铜(Ⅱ)原子的自旋布居大小相等,符号相反,磁中心间的作用为反铁磁耦合。草酸根桥配体向磁中心的电子转移使得铜(Ⅱ)原子的自旋显著离域,这种离域有利于反铁磁耦合,草酸根桥配体中的碳原子上出现自旋极化。当铜(Ⅱ)原子的配位环境由平面四方形向四面体或四方锥变化时,反铁磁耦合的强度减弱。体系的沿前轨道主要由铜(Ⅱ)原子d轨道和配体原子p轨道构成,这种构成利于草酸根桥配体与磁中心之间的电子转移。     

氧桥联稀土钆双核配合物磁学性质的密度泛函理论研究

采用密度泛函理论结合对称性破损态方法,选用氧桥联稀土钆双核配合物为研究对象,通过与实验值比较,探讨了不同泛函与基组对计算磁耦合常数的影响.结果表明,在B3LYP/TZV水平下(Gd为SARC-TZV),相对论效应采用DHK2方法,计算结果与实验测量值-0.022 5cm~(-1)最接近.不同体系测试结果显示,可在该水平下预测新合成稀土钆双核配合物的磁学性质.Mulliken自旋密度分析可知磁中心Gd以自旋极化为主.键级分析表明,2个磁中心之间的磁耦合作用通过桥联氧原子的超交换作用实现.分子磁轨道分析显示2个磁中心间存在较强的轨道相互作用,其磁轨道主要是由钆原子的4f_z~3,4f_z~2_x轨道和桥联氧原子的2pz轨道组成.     

对嘧啶的邻、间、对位双自由基体系的自旋耦合规律的研究

采用量子化学abinitio法和密度泛函方法对不同取代位置的嘧啶自旋耦合规律进行研究 .两种方法比较 ,用UHF方法计算导致自旋污染严重 ,而用UB3LYP方法计算 ,自旋污染则减少了许多 .计算结果得到了双自由基之间磁性耦合的拓扑规则 :共轭体系中 ,两个自由基之间以偶数个碳 (或氮 )原子耦合 ,则有效交换积分Jij<0 ,体系具有低自旋基态 ,表现为反铁磁耦合 ;两个自由基之间以奇数个碳 (或氮 )原子耦合 ,则有效交换积分Jij>0 ,体系具有高自旋基态 ,表现为铁磁耦合 .自由基性质和铁磁耦合单元的不同位置对自旋耦合的影响较大 ,这些结论为有机磁性材料的分子设计与实验合成提供了理论依据 .     

Defect formation and magnetic properties of carbon-doped ZnO nanowires by the first principles

Theoretical calculation based on density functional theory (DFT) and local density approximation (LDA) with Hubbard parameters has been carried out in studying defect formation energy, transition energy and ferromagnetism of carbon-doped ZnO nanowires (NW). The formation and ionization characteristics of the defects [C_O (B), C_O (S), C_Zn (B), V_O (B), V_Zn (B), I_O (oct) and I_Zn (oct)] in ZnO NW are analyzed in the text. Ferromagnetic (FM) and antiferromagnetic (AFM) coupling between C atoms are also investigated by 9 different configurations. The FM and AFM stability are explained by the interaction of C energy level. In addition, the vacancies [V_O (B) and V_Zn (B)] and interstitials [I_O (oct) and I_Zn (oct)] affecting the FM coupling are also investigated. It is found that magnetic moment of C 2p can be mediated by these defects.     

Energy Stabilities,Magnetic Properties,and Electronic Structures of Diluted Magnetic Semiconductor Zn1-xMnxS(001) Thin Films

We investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn_1-xMn_xS(001) thin films with different Mn doping concentrations using the total energy density functional theory. The energy stability and density of states of a single Mn atom and two Mn atoms at various doped configurations and different magnetic coupling state were calculated. Different doping configurations have different degrees of p-d hybridization, and because Mn atoms are located in different crystal-field environment, the 3d projected densities of states peak splitting of different Mn doping configurations are quite different. In the two Mn atoms doped, the calculated ground states of three kinds of stable configurations are anti-ferromagnetic state. We analyzed the 3d density of states diagram of three kinds of energy stability configurations with the two Mn atoms in different magnetic coupling state. When the two Mn atoms are ferromagnetic coupling, due to d-d electron interactions, density of states of anti-bonding state have significant broadening peaks. As the concentration of Mn atoms increases, there is a tendency for Mn atoms to form nearest neighbors and cluster around S. For such these configurations, the antiferromagnetic coupling between Mn atoms is energetically more favorable.     

Enhanced ultraviolet emission from ZnS-coated ZnO nanowires fabricated by self-assembling method

A simple chemical route for ZnS-coated ZnO nanowires with preferential (002) orientation is reported. Sodium sulfide and zinc nitrate were employed to supply S and Zn atoms at 60 degrees C to form ZnS-coated ZnO nanowires structures. Electron diffraction measurement shows that the ZnO/ZnS core-shell nanostructure is single crystalline. Interesting features are found in the photoluminescence (PL) spectra of ZnS-coated ZnO nanostructures. After coating, the UV emission of nanorods is dramatically enhanced at the expense of the green emission. The core/shell structure with higher band gap shell material and reduced surface states should be responsible for this PL enhancement.     

Systematic approach to design organic magnetic molecules: strongly coupled diradicals with ethylene coupler

The intramolecular magnetic coupling constant (J) values of diradical systems linked with two monoradicals through a coupler (para-substituted phenyl acetylene (Model I), meta-substituted phenyl acetylene (Model II), ethylene (Model III)) were investigated by unrestricted density functional theory calculations. We divided eight monoradicals into α-group and β-group according to Mulliken spin density values of the connected atoms. The overall trends in the strength of magnetic interactions of diradicals were found to be identical in three different model systems. The diradicals with para-substituted phenyl acetylene coupler resulted in almost twice stronger intramolecular magnetic coupling interactions of the corresponding diradicals as compared to the meta-substituted one with opposite magnetism. NN-Ethylene-PO (nitronyl nitroxide radical coupled to phenoxyl radical via ethylene coupler) was calculated to have the strongest magnetic coupling constant with ferromagnetism, and to be even stronger (more than twice) than NN-ethylene-NN (nitronyl nitroxide diradical with ethylene coupler), which was reported to have strong antiferromagnetic interactions in a previous experiment. It was found that the spin density values of the connected atoms are closely related to the determination of magnetic interactions and J values. The spin states of the ground state in diradical systems were explained by means of the spin alternation rule.     

Fe/Cr超晶格的电子结构和磁性质

应用密度泛函全势线性缀加平面波(FLAPW)方法研究了Fem/Crn (m=3, 4; n=1, 3, 4)超晶格的电子结构和磁性质. 结果表明, Fe3/Cr1和Fe3/Cr3体系的基态中, Fe层间存在铁磁耦合; 而Fe4/Cr4体系基态中, 存在反铁磁耦合; Cr层的磁矩方向交替变化, 交界面上的Fe和Cr间存在反铁磁耦合.     

Size-dependent alternation of magnetoresistive properties in atomic chains

Spin-polarized electronic and transport properties of carbon atomic chains are investigated when they are capped with magnetic transition-metal (TM) atoms like Cr or Co. The magnetic ground state of the TM-C(n)-TM chains alternates between the ferromagnetic (F) and antiferromagnetic (AF) spin configurations as a function of n. In view of the nanoscale spintronic device applications the desirable AF state is obtained for only even-n chains with Cr; conversely only odd-n chains with Co have AF ground states. When connected to appropriate metallic electrodes these atomic chains display a strong spin-valve effect. Analysis of structural, electronic, and magnetic properties of these atomic chains, as well as the indirect exchange coupling of the TM atoms through non-magnetic carbon atoms are presented.     

Ferromagnetism induced by intrinsic defects and boron substitution in single-wall SiC nanotubes

On the basis of density functional theory (DFT) methods, we study the magnetic properties and electronic structures of the armchair (4, 4) and zigzag (8, 0) single-wall SiC nanotubes with various vacancies and boron substitution. The calculation results indicate that a Si vacancy could induce the magnetic moments in both armchair (4, 4) and zigzag (8, 0) single-wall SiC nanotubes, which mainly arise from the p orbital of C atoms surrounding Si vacancy, leading to the ferromagnetic coupling. However, a C vacancy could only bring about the magnetic moment in armchair (4, 4) single-wall SiC nanotube, which mainly originates from the polarization of Si p electrons, leading to the antiferromagnetic coupling. In addition, for both kinds of single-wall SiC nanotubes, magnetic moments can be induced by a boron atom substituting for C atom. When two boron atoms locate nearest neighbored, both kinds of single-wall Si(C, B) nanotubes exhibit antiferromagnetic coupling.     

C-doped ZnO nanowires: electronic structures, magnetic properties, and a possible spintronic device

Electronic structures, magnetic properties, and spin-dependent electron transport characteristics of C-doped ZnO nanowires have been investigated via first-principles method based on density functional theory and nonequilibrium techniques of Green's functions. Our calculations show that the doping of carbon atoms in a ZnO nanowire could induce strong magnetic moments in the wire, and the electronic structures as well as the magnetic properties of the system sensitively depend on partial hydrogenation. Based on these findings, we proposed a quasi-1d tunneling magnetic junction made of a partially hydrogenated C-doped ZnO nanowire, which shows a high tunneling magnetoresistance ratio, and could be the building block of a new class of spintronic devices.     

Magnetic properties of diruthenium(II,III) carboxylate compounds with large zero-field splitting and strong antiferromagnetic coupling

The magnetic properties of mixed-valent compounds of general formula Ru2Cl(mu-O2CR)4 [R = CH2-CH3 (1), C(Me)=CHEt) (2)] have been studied in the 2-300 K temperature range. This magnetic study also includes a revision of the magnetic properties of the complex Ru2Cl(mu-O2CCMePh2)4 (3). Compounds 1-3 show a linear structure and a strong antiferromagnetic coupling between the diruthenium units through the chlorine atoms according to previous studies. Two fitting models to explain the magnetic properties of these complexes that incorporate a large zero-field splitting together with a strong antiferromagnetic coupling are described. These models consider that each diruthenium unit (S = 3/2) is magnetically coupled to the nearest diruthenium unit and ignores the longer distance magnetic coupling. The fitting models were found to be successful in fitting the magnetic data of the linear diruthenium(II,III) complexes. The zero-field splitting, D, and the antiferromagnetic coupling, zJ, vary from 37.8 to 48.0 cm-1 and from -7.43 to -13.30 cm-1, respectively, for complexes. The D values are similar to those calculated for the nonlinear diruthenium(II,III) compounds and confirm the validity of the proposed fitting models.