共查询到19条相似文献,搜索用时 286 毫秒
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以Ⅱ-Ⅵ族无机半导体ZnO为电子传输层,PPV为空穴传输层和发光层,得到的电致发光器件比单层PPV器件的发光亮度和效率都高.器件结构为ITO/PPV/ZnO/Al的电致发光光谱同单层PPV器件的光谱基本相同,但是启亮电压明显比单层器件低,最大亮度大约比单层器件高6倍左右,同时工作电流也比单层器件小.通过PPV层自吸收现象可判断出发光区域在PPV/ZnO界面处.电流-电压曲线表明,这种器件具有空间电荷限制电流特性,即J∝Vn,这里n大约为2,这器件的电流主要受到空穴的限制. 相似文献
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联苯乙烯类蓝色发光材料DPVBi的合成及发光性质研究 总被引:6,自引:0,他引:6
合成了联苯乙烯类蓝色有机发光材料DPVBi[4,4′-二(2,2-二苯乙烯基)-1,l′-联苯],用^1H-NMR,IR,元素分析等方法对其结构进行了表征。以DPVBi作发光层制备了电致发光器件,其结构为:ITO/CuPc/NPB/DPVBi/Alq3/LiF/Al,研究了器件的电致发光性质。器件最高亮度达4 373cd/cm^2,最大流明效率为1.24 lm/w,在20mA/cm^2电流密度驱动下的亮度为434cd/cm^2,CIE色坐标为x=0.15,y=0.16,器件的蓝色发光具有较好的色纯度。重点对器件发光色度的稳定性进行了研究,结果表明,随电流密度(4~4 000mA/cm^2)的变化,器件色度具有很好的稳定性。 相似文献
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ZnS:Mn、Cu粉末直流电致发光器件直流和交流电致发光一致性的研究 总被引:1,自引:1,他引:0
本文研究了粉末直流电致发光(DCEL)器件在直流(DC)和交流(AC)电压下光电特性的关联和区别及其物理机制.实验发现,在DC和AC条件下DCEL器件的阻抗特性之间没有任何有规律的关联,而AC条件下的激发电流IA和亮度BA以及DC条件下的亮度BD和发光效率ηD四个参量之间则表现出某种程度的一致性,但AC条件下的发光效率ηA与上述四个参量之间却表现出某种相反和相对立的关系.DCEL器件的光电特性具有强烈非线性和对电压方向的非对称性.正半周(或DC条件下)DCEL器件是在高电场和低电流激发下的发光.对发光起主要作用的是电场强度.在负半周时则是低电场和大电流激发下的发光.对发光起主要作用的是激发电流而不是电场强度.在AC条件下依材料、工艺、形成条件和工作电压的不同,DCEL器件可能更多地显示出正半周,负半周或两半周综合的光电特性.上述观点可以解释本文的实验结果. 相似文献
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制备了结构为ITO/MoO3(50 nm)/NPB(40 nm)/TCTA(10 nm)/CBP:14%GIr1(30 nm)/TCTA(x)/CBP:2%R-4B(10 nm)/BCP(10 nm)/Alq3(40 nm)/LiF(1 nm)/Al(100 nm)的红绿磷光有机电致发光器件,GIr1和R-4B分别为红、绿磷光染料。通过在红绿间插入较薄间隔层TCTA的方法,调节载流子、激子在红绿发光层中的分布,并结合TCTA和BCP对发光层内载流子和激子的有效阻挡作用,研究了载流子调控层TCTA在不同厚度下对器件发光性能的影响。结果表明,TCTA为1 nm时,器件的发光性能得到了很好的提升。电压为6 V时,TCTA为1 nm器件的电流密度、亮度、最大电流效率分别为0.509 mA/cm2、69.91 cd/m2和13.72 cd/A,而TCTA为0 nm器件的电流密度、亮度、最大电流效率分别为1.848 mA/cm2、215.7 cd/m2和11.67 cd/A。 相似文献
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以铱配合物红色磷光体为掺杂剂,制备了基于TPBi材料的红色电致磷光器件,其结构为ITO/CuPc/NPB/TPBi:Btp2Ir(acac)/ TPBi/Alq/LiF/Al.取得了在x=0.62,y=0.35的色度下,效率最高达2.43cd/A;电流密度为20mA/cm2时,亮度431cd/m2;电流密度为400mA/cm2时,亮度4798 cd/m2的结果.讨论了不同的发光层厚度影响器件色度和
关键词:
三线态
红光掺杂剂
有机电致磷光
T-T湮没 相似文献
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用在含有2%铝的锌中降阻的ZnS晶体制成发光二极管,在反向偏压下可以得到较亮的蓝色电致发光.比较两类二极管(E和C)的电致发光和阴极射线发光光谱.并且连同电子探针的分析,电致发光的电流-电压特性、亮度-电流特性测量,解释了蓝色电致发光的产生;它与富铝区有关,富铝区提供了Vzn-Al复合体形成蓝色发光中心并且提供了施主,降低了电阻. 相似文献
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Performance of La2O3/InAlN/GaN metal—oxide—semiconductor high electron mobility transistors 下载免费PDF全文
We report on the performance of La2O3/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors(MOSHEMTs) and InAlN/GaN high electron mobility transistors(HEMTs).The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device,while the gate leakage current in the reverse direction could be reduced by four orders of magnitude.Compared with the HEMT device of a similar geometry,MOSHEMT presents a large gate voltage swing and negligible current collapse. 相似文献
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利用水热法制备了垂直于衬底的定向生长的ZnO纳米棒,利用扫描电子显微镜及光致发光的方法对其形貌及光学特性进行了表征,利用场发射性能测试装置对ZnO纳米棒的场发射性能进行了测试.结果表明:利用水热法在较低的温度(95 ℃) 下生长了具有较好形貌和结构的ZnO纳米棒,并表现出了较好的场发射特性,当电流密度为1 μA/cm2时,开启电场是2.8 V/μm,当电场为6.4 V/μm时,电流密度可以达到0.67 mA/cm2,场增强因子为3360.稳定性测试表明,在5 h内,4.5 V/μm的电场下,其波动不超过25%.将制备的ZnO纳米棒应用到有机/无机电致发光中,其中ZnO纳米棒为电子传输层,m-MTDATA(4,4',4″-tris{N,(3-methylphenyl)-N-phenylamino}-triphenylamine) 为空穴传输层,得到了ZnO的342 nm的紫外电致发光,此发光较ZnO纳米棒光致发光的紫外发射有约40 nm的蓝移.
关键词:
ZnO纳米棒
场发射
水热法
有机/无机复合电致发光 相似文献
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Shunri Oda Kenji Akagi Hiroshi Kukimoto Tadahisa Nakayama 《Journal of luminescence》1978,16(3):323-330
Bright blue and green cathodoluminescence from low resistivity ZnS crystals has been observed under the excitation of low-energy electron beams of several tens of volts; i.e., 40 fL at 50 V. Properties of the surface of the crystals are studied by the dependence of current and brightness on applied voltage and by the spectra of cathodoluminescence and photoluminescence. 相似文献
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两种非晶碳化硅薄膜发光二极管 总被引:1,自引:0,他引:1
利用硅烷与甲烷的混合气在射频电场下的等离子体反应,淀积不同导电类型的非晶碳化硅薄膜,制成了p-i-n结注入型和均匀材料的碰撞电离型两种大面积发光二极管。本文报导这两种非晶发光器件的结构设计及光谱特性,并对器件的发光机现进行了讨论。 相似文献
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Reduced Graphene Oxide decorated with Manganese Cobalt Oxide as Multifunctional Material for Mechanically Rechargeable and Hybrid Zinc–Air Batteries 下载免费PDF全文
Adnan Qaseem Fuyi Chen Chuanzhou Qiu Abdelaziz Mahmoudi Xiaoqiang Wu Xiaolu Wang Roy L. Johnston 《Particle & Particle Systems Characterization》2017,34(10)
Spinel MnCo2O4 nanoparticles on nitrogen‐doped reduced graphene oxide (MnCo2O4/NGr) are synthesized for advanced zinc–air batteries with remarkable cyclic efficiency and stability. The synthesized MnCo2O4/NGr exhibits good oxygen‐reduction reaction (ORR) activity with half‐wave potential E 1/2 of 0.85 V (vs reversible hydrogen electrode (RHE)), comparable to commercial Pt/C with E 1/2 of 0.88 V (vs RHE) along with superior oxygen electrode activity ΔE = 0.91 V for the ORR/OER (oxygen‐evolution reaction) in alkaline media. Durability tests confirm that MnCo2O4/NGr is more stable than Pt/C in alkaline environment. MnCo2O4/NGr functions with stable discharge profile of 1.2 V at 20 mA cm?2, large discharge capacity of 707 mAh g?1Zn at 40 mA cm?2 and a high energy density of 813 Wh kg?1Zn in a mechanically rechargeable zinc–air battery. The electrically rechargeable MnCo2O4/NGr zinc–air battery displays hybrid behavior with both Faradaic and oxygen redox charge–discharge characteristics, operating at higher voltage and providing higher power density and excellent cyclic efficiency of 86% for over 100 cycles compared to Pt/C with efficiency of around 60%. Moreover, hybrid zinc–air battery operates with a stable and energy efficient profile at different current densities. 相似文献
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Improving the field-emission properties of carbon nanotubes by magnetically controlled nickel-electroplating treatment 下载免费PDF全文
A novel magnetically controlled Ni-plating method has been developed to improve the field-emission properties of carbon nanotubes (CNTs). The effect of the magnetic field and Ni-electroplating on CNT field-emission properties was investigated, and the results are demonstrated using scanning electron microscopy, J-E and the duration test. After treatment, the turn-on electric field declines from 1.55 to 0.91 V/μm at an emission current density of 100 μA/cm2, and the emission current density increases from 0.011 to 0.34 mA/cm2 at an electric field of 1.0 V/μm. Both the brightness and uniformity of the CNT emission performance are improved after treatment. 相似文献
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The influence of the hydrogen annealing treatment on the reliability of Ti/HfOx /Pt capacitors is investigated by analyzing bias temperature instability (BTI). As compared to the N2‐annealed sample, in the case of hydrogen‐annealed samples, both the set/reset voltages and currents are reduced from 6.5 V/–1.6 V to 3.8 V/–1.2 V and from 4 mA/170 nA to 800 µA/30 nA at 0.1 V, respectively. Of particular interest is the dramatic reduction in the set voltage variation from 3.3 V to 1.8 V. In addition, in BTI experiments, the current shift at the high resistance state (HRS) is reduced from 1.5 µA to 40 nA under a bias stress of –1 V/1000 s and from 40 µA to 0.5 µA under a temperature stress of 120 °C/1000 s. These results show that the hydrogen annealing treatment is very effective in improving the reliability of RRAM cells because it reduces the leakage current under bias temperature stress. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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Field emission in diamond and graphite-like polycrystalline films is investigated experimentally. It is shown that the emission
efficiency increases as the nondiamond carbon phase increases; for graphite-like films the threshold electric field is less
than 1.5 V/μm, and at 4 V/μm the emission current reaches 1 mA/cm2, while the density of emission centers exceeds 106 cm−2. A general mechanism explaining the phenomenon of electron field emission from materials containing graphite-like carbon
is proposed.
Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 56–60 (10 July 1998) 相似文献
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介绍了一种具有高阈值电压和大栅压摆幅的常关型槽栅AlGaN/GaN金属氧化物半导体高电子迁移率晶体管。采用原子层淀积(ALD)方法实现Al2O3栅介质的沉积。槽栅常关型AlGaN/GaN MOS-HEMT的栅长(Lg)为2 μm,栅宽(Wg)为0.9 mm(0.45 mm×2),栅极和源极(Lgs)之间的距离为5 μm,栅极和漏极(Lgd)之间的距离为10 μm。在栅压为-20 V时,槽栅常关型AlGaN/GaN MOS-HEMT的栅漏电仅为0.65 nA。在栅压为+12 V时,槽栅常关型AlGaN/GaN MOS-HEMT的栅漏电为225 nA。器件的栅压摆幅为-20~+12 V。在栅压Vgs=+10 V时,槽栅常关型AlGaN/GaN MOS-HEMT电流和饱和电流密度分别达到了98 mA和108 mA/mm (Wg=0.9 mm), 特征导通电阻为4 mΩ·cm2。槽栅常关型AlGaN/GaN MOS-HEMT的阈值电压为+4.6 V,开启与关断电流比达到了5×108。当Vds=7 V时,器件的峰值跨导为42 mS/mm (Wg=0.9 mm,Vgs=+10 V)。在Vgs=0 V时,栅漏间距为10 μm的槽栅常关型AlGaN/GaN MOS-HEMT的关断击穿电压为450 V,关断泄露电流为0.025 mA/mm。 相似文献