Concurrent doping effect of Ti and nano-diamond on flux pinning of MgB2

Nano-diamond and titanium concurrently doped MgB₂ nanocomposites have been prepared by solid state reaction method. The effects of carbon and Ti concurrent doping on J_c–H behavior and pinning force scaling features of MgB₂ have been investigated. Although T_c was slightly depressed, J_c of MgB₂ have been significantly improved by the nano-diamond doping, especially in the high field region. In the mean time, the J_c value in low field region is sustained though concurrent Ti doping. Microstructure analysis reveals that when nano-diamond was concurrently doped with titanium in MgB₂, a unique nanocomposite in which TiB₂ forms a thin layer surrounding MgB₂ grains whereas nano-diamond particles were wrapped inside the MgB₂ grains. Besides, nano-diamond doping results in a high density stress field in the MgB₂ samples, which may take responsibility for the Δκ pinning behavior in the carbon-doped MgB₂ system.     

The upper critical field in two-band layered superconductors

The upper critical field of clean MgB₂ is investigated using the two-band layered Ginzburg--Landau (GL) theory. The calculated results are fitted to the experimental data of clean MgB₂ crystal very well in a broad temperature range. Based on the GL theory for clean superconductors, a phenomenological theory for dirty superconductor is proposed. Selecting appropriate parameters, two-band layered GL theory is successfully applied to the crystal of Mg(B_1-xC_x)₂ and the neutron irradiation samples of MgB₂.     

Iron doping effect on superconducting properties of MgB2

Iron-doped MgB₂ bulks are prepared by hybridized diffusion method using nano-powder and macro-powder of pure iron as iron source. The doping effect on superconductivity transition temperature, T_c, and critical current J_c have been investigated. It is found that both T_c and J_c of MgB₂ show quite different features depending on the particle size of the dopant powders. It is demonstrated that different from iron bulk or large size powders, iron nano-powders are active dopant for MgB₂ which suppresses both T_c and J_c of MgB₂.     

The superconducting properties of Cu-doped MgB2 bulks prepared by a high-energy milling method

The Cu-doped MgB₂ bulks were prepared by a high-energy milling and subsequent sintering method. Compared to the pure and Cu-doped bulks prepared only by sintering, the critical current density (J_c) of the milled Cu-doped samples was improved with a slight decrease in critical transition temperature (T_c). Using the phase analysis and microstructure observation, it has been found that the MgB₂ grains in the milled Cu-doped sample was refined with the high-energy milling and thus provided more grain boundary pinning, which was contributed to the improvement of J_c at high field.     

MgB2 coated superconducting tapes with high critical current densities fabricated by hybrid physical-chemical vapor deposition

The MgB₂ coated superconducting tapes have been fabricated on textured Cu (0 0 1) and polycrystalline Hastelloy tapes using coated conductor technique, which has been developed for the second generation high temperature superconducting wires. The MgB₂/Cu tapes were fabricated over a wide temperature range of 460-520 °C by using hybrid physical-chemical vapor deposition (HPCVD) technique. The tapes exhibited the critical temperatures (T_c) ranging between 36 and 38 K with superconducting transition width (ΔT_c) of about 0.3-0.6 K. The highest critical current density (J_c) of 1.34 × 10⁵ A/cm² at 5 K under 3 T is obtained for the MgB₂/Cu tape grown at 460 °C. To further improve the flux pinning property of MgB₂ tapes, SiC is coated as an impurity layer on the Cu tape. In contrast to pure MgB₂/Cu tapes, the MgB₂ on SiC-coated Cu tapes exhibited opposite trend in the dependence of J_c with growth temperature. The improved flux pinning by the additional defects created by SiC-impurity layer along with the MgB₂ grain boundaries lead to strong improvement in J_c for the MgB₂/SiC/Cu tapes. The MgB₂/Hastelloy superconducting tapes fabricated at a temperature of 520 °C showed the critical temperatures ranging between 38.5 and 39.6 K. We obtained much higher J_c values over the wide field range for MgB₂/Hastelloy tapes than the previously reported data on other metallic substrates, such as Cu, SS, and Nb. The J_c values of J_c(20 K, 0 T) ∼5.8 × 10⁶ A/cm² and J_c(20 K, 1.5 T) ∼2.4 × 10⁵ A/cm² is obtained for the 2-μm-thick MgB₂/Hastelloy tape. This paper will review the merits of coated conductor approach along with the HPCVD technique to fabricate MgB₂ conductors with high T_c and J_c values which are useful for large scale applications.     

利用电泳法在金属基底上制备MgB2超导厚膜

利用电泳技术在高熔点金属基底Ta，Mo和W上制备MgB₂超导厚膜.厚膜中的MgB2晶粒结合紧密，粒度小于1μm，呈随机取向生长.电阻测量表明沉积在Ta，Mo，W上的MgB₂厚膜的超导起始转变温度分别为36.5K，34.8K，33.4K，对应的转变宽度为0.3K，1.5K和2.0K.三种基底上制备的MgB₂厚膜的临界电流密度在不同温度下随外磁场的变化情况 基本相同，MgB₂/Mo厚膜的临界电流密 关键词： 2超导厚膜')" href="#">MgB₂超导厚膜 电泳 金属基底     

超导材料NbS2上临界磁场的理论分析

根据两带Ginzburg-Landau 理论计算了层状超导材料NbS₂的上临界磁场, 以及上临界磁场各向异性参数随温度的变化情况, 并将NbS₂与MgB₂, NbSe₂上临界磁场的各向异性进行比较. 所得计算结果与已有实验数据符合得很好, 充分说明了NbS₂的超导电性具有两能隙特征. NbS₂上临界磁场各向异性参数在5.0 K附近逐渐变小, 这与MgB₂和NbSe₂有相似之处. 但NbS₂的上临界磁场各向异性参数大约为7.3, 明显大于MgB₂和NbSe₂. 计算结果还表明, NbS₂较大能隙所对应能带的有效质量比约为54, 另一能带的有效质量基本为各向同性.     

MgB2混合态热导率的反常增强

测量了MgB₂多晶样品的混合态热导率，磁场强度为0—7 T，温度范围为5—45 K .实验结果显示MgB₂热导率在低场下迅速上升，高场下趋于饱和，这与MgB₂的 二能隙电子结构有关.对实验结果的分析指出，低温强场下MgB₂多晶样品热导率的显著增强无法完全 用电子热导来解释，并对此进行了讨论. 关键词： 2')" href="#">MgB₂ 热导率 混合态     

钛离子辐照对MgB2超导薄膜的载流能力和磁通钉扎能力的影响

利用混合物理化学气相沉积法(hybrid physical-chemical vapor deposition, HPCVD)可以制备出高性能的MgB₂超导薄膜, 再对薄膜进行钛(Ti)离子辐照处理.经过辐照处理后的样品被掺入了Ti元素, 与未处理的干净MgB₂样品相比,其超导转变温度没有出现大幅度的下降, 而在外加磁场下的临界电流密度得到了明显的提高,同时样品的上临界磁场也得到了提高. 在温度5 K, 外加垂直磁场为4 T的情况下, Ti离子辐照剂量为1× 10¹³/cm²的样品的临界电流密度达到了1.72× 10⁵ A/cm², 比干净的MgB₂要高出许多,而其超导转变温度仍能维持在39.9 K的较高水平.     

Effects of nano-carbon doping and sintering temperature on microstructure and properties of MgB2

We fabricated nano-carbon (NC) doped MgB₂ bulks using an in situ process in order to improve the critical current density (J_c) under a high magnetic field and evaluated the correlated effects of the doped carbon content and sintering temperature on the phase formation, microstructure and critical properties. MgB_2−xC_x bulks with x = 0 and 0.05 were fabricated by pressing the powder into pellets and sintering at 800 °C, 900 °C, or 1000 °C for 30 min.We observed that NC was an effective dopant for MgB₂ and that part of it was incorporated into the MgB₂ while the other part remained (undoped), which reduced the grain size. The actual C content was estimated to be 68–90% of the nominal content. The NC doped samples exhibited lower T_c values and better J_c(B) behavior than the undoped samples. The doped sample sintered at 900 °C showed the highest J_c value due to its high doping level, small amount of second phase, and fine grains. On the other hand, the J_c was decreased at a sintering temperature of 1000 °C as a result of the formation of MgB₄ phase.     

Crystal orientation dependence of the critical current density in a-axis- and c-axis-oriented MgB2 films

We have investigated the critical current density for MgB₂ films having various crystal orientations prepared by using a hybrid physical-chemical vapor deposition system. An enhancement of the critical current density is clearly presented in MgB₂ films with an a-axis or a b-axis orientation rather than a c-axis orientation. X-ray diffraction patterns reveal a suppression of c-axis orientations while a (100) orientation becomes dominant, and the surface morphology of the a-axis-oriented film shows that the orientation of the c-axis-oriented MgB₂ grains parallel to the plane of the substrate. As the a-axis orientation becomes more dominant in the MgB₂ films, the field performance of the critical current density clearly becomes better. These results suggest that the synthesis of MgB₂ with high ab-plane orientations is one of the keys to enhancing the critical current density in MgB₂.     

Influence of shock-wave pressure up to 65 GPa on the crystal structure and superconducting properties of MgB2

The influence of shock-wave pressure treatment up to 65 GPa on the crystal structure and the superconducting transition temperature of a polycrystalline MgB₂ sample has been investigated. X-ray diffraction measurements have revealed that the shock-wave pressure does not result in any irreversible structural phase transitions in the MgB₂, except for microdistortions formed in the crystal structure of the shock-wave pressure-treated MgB₂ sample. This conclusion is in agreement with the results of superconducting transition temperature measurements of a MgB₂ sample performed before and after its shock-wave pressure treatment.     

Microwave absorption studies of MgB2 superconductor

Microwave absorption studies have been carried out on MgB₂ superconductor using a standard X-band EPR spectrometer. The modulated low-field microwave absorption signals recorded for polycrystalline (grain size ∼ 10 μm) samples suggested the absence of weak-link character. The field dependent direct microwave absorption has been found to obey a ✓H dependence with two different slopes, which indicated a transition from strongly pinned lattice to flux flow regime.     

Higher borides and oxygen-enriched Mg–B–O inclusions as possible pinning centers in nanostructural magnesium diboride and the influence of additives on their formation

The study of high pressure (2 GPa) synthesized MgB₂-based materials allows us to conclude that higher borides (with near MgB₁₂ stoichiometry) and oxygen-enriched Mg–B–O inclusions can be pinning centers in nanostructural magnesium diboride matrix (with average grain sizes of 15–37 nm). It has been established that additions of Ti or SiC as well as manufacturing temperature can affect the size, amount and distribution of these inclusions in the material structure and thus, influence critical current density. The superconducting behavior of materials with near MgB₁₂ stoichiometry of matrix is discussed.     

Enhanced critical current density of MgB2 thin films deposited at low temperatures by ZnO seed impurity

We report a facile method to enhance the critical current density (J_c) of superconducting MgB₂ thin films. MgB₂ thin films were deposited on zinc acetate dehydrate (Zn(CH₃COO)₂2H₂O) spin-coated Al₂O₃ (000l) substrates by using a hybrid physical-chemical vapor deposition system at low temperatures. Synthesis of MgB₂ at low temperatures can reduce the substitution of Zn into the Mg site, hence avoiding the reduction of superconducting critical temperature. MgB₂ thin films grown on ZnO-buffered layers showed a significant enhancement of J_c in the magnetic field due to the creation of additional pinning sources, namely point defects and grain boundaries. Broad peaks were observed in the magnetic field dependence of the flux pinning force density, indicating competition of different pinning sources.     

Ultraviolet photovoltaic characteristic of MgB2 thin film

Fast photoelectric effects have been observed in MgB₂ thin film fabricated by chemical vapour deposition. The rise time was $\sim $10 ns and the full width at half-maximum was \sim185\,ns for the photovoltaic pulse when the film was irradiated by a 308\,nm laser pulse of 25\,ns in duration. X-ray diffraction and the scanning electron microscope revealed that the film was polycrystalline with preferred c-axis orientation. We propose that nonequilibrium electron--hole pairs are excited in the grains and grain boundary regions for MgB₂ film under ultraviolet laser and then the built-in electric field near the grain boundaries separates carriers, which lead to the appearance of an instant photovoltage.     

A possible role of amorphous regions at grain-boundary vertex points as linear defects on flux pinning in MgB2 films with columnar grain structure

We measured the transport properties of MgB₂ films having columnar grain structure with their axis normal to the substrate. When an external magnetic field was applied parallel to the grain axis, an enhanced critical current density has been observed, and this result has been ascribed to flux pinning induced by grain boundaries. The shape of the angular dependence of critical current density and its magnetic field dependence showed a quite similar resemblance to those of YBa₂Cu₃O_x films containing columnar defects, implying a possible existence of linear defects in MgB₂ films of columnar structure. We propose that the amorphous regions at the vertex points of three or more grain boundaries observed in microstructural studies correspond to the linear defects and these linear defects anchor the end points of the flux line dislocations of Frank-Read sources, by which the shear in the flux line lattice is actuated. This assumed mechanism is found to reasonably explain the magnetic field dependence of the flux pinning force density of MgB₂ films with columnar grain structure.     

Enhancement of Jc by Hf-doping in the superconductor MgB2: A hyperfine interaction study

Measurements of the critical current density (J_c) by magnetisation and the upper critical field (H_c2) by magnetoresistance have been performed for hafnium-doped MgB₂. There has been a remarkable enhancement of J_c as compared to that by ion irradiation without any appreciable decrease in T_c, which is beneficial from the point of view of applications. The irreversibility line extracted from J_c shows an upward shift. In addition, there has been an increase in the upper critical field which indicates that Hf partially substitutes for Mg. Hyperfine interaction parameters obtained from time differential perturbed angular correlation (TDPAC) measurements revealed the formation of HfB and HfB₂ phases along with the substitution of Hf. A possible explanation is given for the role of these species in the enhancement of J_c in MgB₂ superconductor.     

Enhanced superconducting properties of Eu2O3-doped MgB2

Bulk polycrystalline samples of Eu₂O₃-doped MgB₂ have been synthesized by a standard solid state reaction route and their structural and superconducting properties have been investigated. As a function of Eu₂O₃ content we have found a significant increase in the critical current density (J_c) and the irreversibility field (H_irr) in the magnetic field range 0–6 T. The XRD results reveal the presence of MgO and EuB₆ secondary phases along with the main hexagonal phase of MgB₂. The strain values and the lattice distortions have been found to increase almost linearly with the nominal Eu₂O₃ content. The observed significant improvement in J_c(H) and H_irr in the Eu₂O₃-doped MgB₂ samples, thus is mainly attributed to the lattice distortions introduced by Eu₂O₃ doping.     

Non-resonant microwave absorption studies of superconducting MgB2 and MgB2 + MgO

Non-resonant microwave absorption (NRMA) studies of superconducting MgB₂ and a sample containing ∼10% by weight of MgO in MgB₂ are reported. The NRMA results indicate near absence of intergranular weak links in the pure MgB₂ sample. A linear temperature dependence of the lower critical field H _c1 is observed indicating a non-s wave superconductivity. However, the phase reversal of the NRMA signal which could suggest d wave symmetry is also not observed. In the MgB₂ + MgO sample, much larger low field dependent absorption is observed indicating the presence of intergranular weak links. The hysteretic behavior of NRMA is compared and contrasted in the two samples. In the pure MgB₂ sample, a large hysteresis is observed between the forward and the reverse scans of the magnetic field indicating strong pinning of flux lines. This hysteresis saturates a few degrees below T _c while in the MgB₂ + MgO sample, a much slower increase of hysteresis with decreasing temperature is observed, a signature of weaker pinning.