Nb/Nb3Sn复合超导材料的高压电子显微镜观察

用1000kV高压电子显微镜观察了单芯和多芯Nb/Nb₃Sn复合材料的显微组织,看到了由Nb₃Sn/Nb₃Sn晶粒重叠而成的叠栅图和Nb基体/Nb₃Sn晶粒重叠而成的叠栅图。 关键词：     

合金元素对Nb3Sn生长动力学的影响

研究了合金元素Zr对Cu-Sn/Nb界面上Nb₃Sn生长动力学的影响。实验表明:在单芯复合材料中加入Zr显著提高了Nb₃Sn层的生长速率,层厚与时间的关系显著超过抛物线规律。这些结果不能仅用内氧化生成的ZrO₂颗粒使晶粒细化来解释,还必须考虑ZrO₂颗粒周围过饱和空位使扩散系数增大等因素。在多芯复合材料中热处理时Cu-Sn基体中Sn量的消耗,显著影响Nb₃Sn的生长。考虑了这一因素的Nb₃Sn生长动力学修正公式能对实验结果进行解释。 关键词：     

极低温下Nb3Sn超导体单晶裂纹动态扩展模拟

研究Nb₃Sn超导体的损伤断裂行为对于揭示超导临界性能弱化背后的力学机制具有重要的意义。采用分子动力学模拟方法,研究了极低温下不含裂纹和含中心裂纹的Nb₃Sn单晶在力学拉伸变形作用下的断裂机制和裂纹扩展行为,同时分析了应变率效应对Nb₃Sn单晶断裂机制与裂纹扩展行为的影响。结果表明：不含裂纹的Nb₃Sn单晶在结构受力后出现滑移,滑移带上位错塞积导致应力集中,应力集中使原子键断裂从而萌生裂纹致使Nb₃Sn单晶断裂;而含中心裂纹的Nb₃Sn单晶则由于裂纹尖端应力集中使得原子键断裂形成微裂纹,裂纹扩展致使Nb₃Sn单晶断裂。Nb₃Sn单晶在不同的应变率下表现出不同的断裂机制,在低应变率下表现为脆性断裂,而在高应变率下表现为韧性断裂。     

高压下Nb3Sn单晶的超导相转变

研究高压下Nb₃Sn单晶的超导相转变行为对探究力学变形诱导的材料超导性能弱化机理有重要意义。通过分子动力学模拟研究了Nb₃Sn单晶在高压下的原子尺度变形和晶体结构变化,在此基础上,建立了高压下Nb₃Sn单晶的超导相转变模型,模型预测结果与实验观测结果吻合较好。结果表明:静水压作用下,Nb₃Sn单晶体发生了明显的晶格畸变,但晶体结构保持完整;压力诱导的费米面上电子态密度的变化在高压下Nb₃Sn单晶体超导相转变中起主导作用。所得研究结果为研究高压下Nb₃Sn多晶体以及复合多晶体的相转变行为奠定了基础,同时有助于进一步认识Nb₃Sn材料超导性能的弱化机理。     

Tl2Ba2Ca2Cu3Oy超导体低场钉扎力的性质

测量了Tl₂Ba₂Ca₂Cu₃O_y超导体多晶样品在不同外磁场和不同温度下的磁滞性质,利用临界态方程求出有效钉扎力随外磁场及温度的变化,有效钉扎力包括晶粒界面处及晶粒内的贡献,发现有效钉扎力有峰效应,峰位置随温度降低向较高磁场移动,峰效应被解释为两种钉扎机制产生的,即两种机制的贡献与外磁场的关系不同,还讨论与这些结果有关的问题。 关键词：     

ITER超导股线的力学性能测试

介绍了Pacman装置的设计原理,用Pacman装置测量了OST公司通过内锡法工艺制备的Nb₃Sn超导股线在12T,4.2K条件下单轴方向的临界电流与应变的关系,应变的范围在-0.8%～+0.6%。用偏量比例模型模拟了临界电流与轴向应变之间的规律,分析了随应变的改变n值的变化,得出了Nb₃Sn超导股线对应变的敏感程度。     

15 T Nb3Sn磁体热处理传热分析及实验研究

大孔径高场磁体是开展超导材料性能研究的必要装置。依托聚变堆主机关键系统综合研究设施项目,中科院等离子体物理研究所将进行15 T高场复合超导磁体研制,磁体高场区由Nb₃Sn密绕线圈构成。热处理是Nb₃Sn线圈研制的关键工艺环节也是磁体研制的难点,要求磁体热处理温度均匀性优于±5℃。针对15 T Nb₃Sn密绕线圈热处理需求,研制了一套真空磁体热处理系统。利用该系统完成了线圈热处理实验,通过传热仿真与实验结果分析,线圈整体温度均匀性优于±3℃,最终各项指标均满足热处理技术要求。     

Nb3Sn扩散薄膜的研究

本文叙述对Nb₃Sn扩散薄膜的一项包括高场临界电流机制,合金元素作用机制等内容在内的综合性实验研究。 关键词：     

柠檬酸掺杂的MgB2超导体钉扎机理的研究

本文研究了柠檬酸掺杂的MgB₂超导材料的J_c-B行为及其钉扎机理.在纯MgB₂多晶样品中,δT_c钉扎起主要作用,而在掺杂的样品中,则是δl钉扎和δT_c钉扎共同作用,并且δl钉扎机理占主要作用,其贡献比重随着掺杂量的增加而增加.从J_c-B行为和钉扎行为的分析都可以得到 关键词： 柠檬酸 2')" href="#">MgB₂ T_c钉扎')" href="#">δT_c钉扎 l钉扎')" href="#">δl钉扎     

YBa2Cu3Oy中氧缺位的磁通钉扎效应

制备了一组不同氧含量(T_cmid>90K)的YBa₂Cu₃O_y单相多晶样品。对其结构、超导电性和磁通钉扎行为的观测结果表明:氧缺位导致临界电流密度J_c和钉扎力密度F_p同时增加,存在一最佳的氧缺位浓度,可使J_c和F_p有最大程度提高。与氧含量y=6.96和6.83时的情况不同,对y=6.94和6.86的样品,其J_c 关键词：     

Experimentelle Bestimmung der Supraleitungsparameter einiger Verbindungen vom β-Wolframtyp aus Magnetisierungsmessungen

A complete analysis of magnetization curves is given for bulk sintered samples of Nb₃Sn with low hysteresis and for finely powdered sintered and melted samples of Nb₃Sn, Nb₃Al, V₃Si and V₃Ga. The Ginzburg-Landau parameterκ and the penetration depthλ of weak magnetic fields is calculated from the temperature dependence of the thermodynamic and upper critical fieldsH _c andH _c2. The slope of theH _c ?T curve is about 360 Oe/°K and approximately the same for all measured samples. There is an extremely high increase of the lower critical fieldH _c1 if the grain size approachesλ. The occurence of field expulsion and partially reversible magnetization curves of sintered Nb₃Sn samples with high sintering temperatures and high pore volumes is explained by means of connections between single grains which have lower transition temperatures.     

Properties of Nb3Ge tapes for high field magnets

A laboratory process for long Nb₃Ge tapes fabrication by chemical vapor deposition (CVD) has been set up. The Nb₃Ge tapes which were fabricated offer the possibility of high current and high field operation at 4.2 K since the values of critical current densities, J_c, measured in high magnetic fields at 20T and 4.2K exceed 5 × 10⁴ A cm^?2 which is the generally accepted criterion for producing a superconducting magnet.     

Upper critical fields of cubic and tetragonal single crystal and polycrystalline Nb3Sn in DC fields to 30 tesla

Measurements of the upper critical field, H_c2(T), in single crystal Nb₃Sn were extended to 30 tesla (300 kG) with dc fields produced by a Hybrid magnet. Observations of H_c2(T) were made for materials which remain in the cubic (c) phase and those which show a martensitic transformation at the tetragonal (t) phase. H_c2(T) measurements of Nb₃Sn for a pure crystal for which the de Haasvan Alphen (DHVA) effect was observed and for polycrystalline (t) phase and (c) phase materials are also reported. Measured values of H_c2(4.2 K) and calculated values of H_c2(0) are: 1) along the [100] direction for our earlier Nb₃Sn, H_c2(4.2 K) = 26 T for the (c) phase and 21.5 T for the (t) phase; H_c2(0) = 29T for the (c) phase and 24 T for the (t) phase; 2) along the [100] direction for the DHVA material H_c2(4.2 K) = 18 T and H_c2(0) = 20 T; 3) for polycrystalline Nb₃Sn (t) phase material H_c2(4.2 K) = 23 T and H_c2(0) = 25 T and for (c) phase material H_c2(4.2 K) = 26 T and H_c2(0) = 29 T. The values of (dH_c2/dT)_T=Tc vary from 2.4T/K for the highest H_c2(T) material to 1.6T/K for the DHVA material. The anisotropy for various Nb₃Sn single crystal materials is small and independent of temperature from T_c to 0.1 T_c. δT_c between the (c) and (t) phase is <0.3 K. Within experimental error excellent fits of H_c2(T) with theory are obtained assuming a dirty or clean Type II superconductor with no Pauli paramagnetic limiting. Experimental details and strong-coupling effects are discussed. When strong-coupling is included, the effects of any paramagnetic limiting would be small and not detectable within our present experimental error. Brief comments also are made concerning H_c2 of V₃Si.     

Asymmetric angular dependence of Jc in coated conductors prior to and after fast neutron irradiation

Angular dependent measurements of J_c were performed on a commercial coated conductor (SuperPower) consisting of a 1 μm thick YBCO layer grown on a MgO IBAD buffer layer. An asymmetric behavior of the angular dependence of J_c (J_c(Ф)) was found with a changing distance between the two peaks at different temperatures and applied magnetic fields. One peak always occurs when the field is oriented parallel to the tape surface, the other smaller peak is located in the perpendicular orientation at high fields, but slightly shifted (by up to 10°) at 77 K and low magnetic fields. This peak shift, the overall J_c(Ф) asymmetry and the influence of fast neutron irradiation on J_c(Ф) are discussed. The spherical defects, introduced by collisions of fast neutrons with the lattice atoms, are randomly distributed, add to the as-grown defect structure and change the critical current anisotropy by altering both peaks.     

High current densities at 20T in long (20m) tapes of CVD-prepared Nb3Ge

Critical current densities J_c as a function of magnetic field have been measured on tapes of chemically vapor deposited (CVD) Nb₃Ge that are up to 20m long. Values of J_c exceed 5 × 10⁴ A/cm² at 20T. Such high critical current densities are encouraging for use of this material in producing a 20T superconducting magnet.     

Angular dependences of critical current density in YBCO thin films with crossed columnar defects

We investigated the dependences of the critical current density J_c on the magnetic field angle θ in YBa₂Cu₃O_7−δ thin films with the crossed configurations of the columnar defects (CDs). To install the crossed CDs, the films were irradiated using the high energetic Xe ions at two angles relative to the c-axis. The additional peak around the c-axis appears in the J_c(θ) for all irradiated films. In lower magnetic fields, the height of the J_c(θ) peak caused by the crossed CDs with the crossing angles θ_i = ±10° was higher than that for the parallel CDs. It is considered that the correlation of the flux pinning by the crossed CDs along the c-axis occurs even in the case of θ_i = ±25°, which was also suggested by the kink behaviors of the scaling parameters of the current–voltage characteristics near 1/3 of the matching field. In higher magnetic fields, on the other hand, the height and width of the J_c(θ) peak for the crossed CD configurations rapidly reduce with increasing the magnetic field compared to the parallel ones. In the crossed CD configurations, the dispersion in the direction of CDs would prevent the correlation of flux pinning along the c-axis in high magnetic fields, which occurs in the parallel CD configurations due to the collective pinning of flux lines including the interstitial flux lines between the directly pinned flux lines by CDs.     

CRITICAL CURRENT DENSITY OF Y-Ba-Cu-Sn-O SUPERCONDUCTORS

The magnetic curves of bulk Y-Ba-Cu-Sn-O have been studied in the temperature range 60-77K and in fields up to 2.4T. The results indicate that J_c varies with the magnetic field as a power law and decreases exponentially with temperature. The critical current density J_c can be improved by the substitution of Sn for Cu.     

Anisotropy of Hc2 in single crystal Nb3Sn and V3Si at high magnetic fields: Limitations of linear chain model

The anisotropy of H_c2 for single crystal Nb₃Sn and V₃Si in the low temperature tetragonal phase was measured in high magnetic fields. At ～ 8K, δ = [H_c2[100]-H_c2[110])/H_c2] ≈0.05 for Nb₃Sn and δ ≈ 0.02 for V₃Si. The data do not show evidence of a highly anisotropic Fermi surface for Nb₃Sn or V₃Si.     

Preparation and critical currents of vapour-deposited Nb3Sn compound

Conclusion The presented results have shown that by optimizing some of the basic technological parameters of the chemical vapour-deposition process it is possible to increase substantially the critical currentI _c and the Nb₃Sn layer thickness of the produced superconductor without any other technological treatment.The critical currentI _c reported byEnstrom et al. [7] concerning the pure reaction atmosphere without doping gases, is about 13 A/mm (per 1 mm of the tape width), in our case it is 62 A/mm in transverse magnetic field of 5 T. We have shown that as far as the Nb₃Sn tape length of the order of 100 m is concerned, it seems more advantageous to work with Nb/Sn chlorides ratio for the region of 0·55 to 0·87 in contrast to the value of 0·33 reported byEnstrom et al. [7]. As we have already mentioned, further increase of theI _c andJ _c values may be achieved by means of doping gases injection into the reaction atmosphere or by additional heat treatment [11] etc.As it is also reported byEnstrom et al. [7], by doping the gaseous ambient with 0·1% CO₂, the increase ofI _c from 13 A/mm to 84 A/mm in the magnetic field of 5 T may be obtained. As the preliminary results of our investigation have shown, an increase from 32 A/mm to 106 A/mm by using the doping gases may be achieved for the tape travelling velocity of 4 m/h, the Nb/Sn chlorides ratio equal to 0·55 and the substrate heating current of the value of 4 A.We expect that by optimizing the technological parameters mentioned above together with following doping and additional heat treatment, we may obtain a substantial increase in theI _c andJ _c values.     

Critical currents of Nb3Sn and V3Ga in transverse magnetic fields up to 150000 oersteds

The quenching curves of some high-field superconductors have been measured for the first time in steady transverse magnetic fields up to 150 kOe. The quenching curves of Nb₃Sn diffusion-layers on single niobium wires show the same slope in the high-field region as they do in lower fields. On the other hand, the quenching curves of “Nb-Sn multiwires” with a synthetic filamentary structure of many interior Nb₃Sn diffusion-layers in the core of this material are nearly horizontal in the high-field region with very high critical current values. The quenching curves of V₃Ga diffusion-layers and of V₃Ga core-wires show an unexpected inversion at about 90 and 100 kOe respectively with increasing critical currents in higher fields.