高频加热磁镜装置等离子体离子能量分布的测量

利用圆柱形低能离子静电分析器,对穿过高频加热磁镜装置逸出锥的逃逸离子和电荷交换生成的中性粒子的能量进行了测量,得到了等离子体离子的能量分布、离子回旋共振条件、以及发生离子回族共振时等离子体离子平均温度与加热净功率之间的线性关系。当加热净功率为100kW时,等离子体离子平均温度约为45eV。每1kW加热净功率大约提高离子温度0.4eV。     

高速图像采集系统与中性粒子计数系统的实现以及对RTX的初步研究

在HL-2A装置实验中，高速图像采集系统在实验期间完成了对等离子体放电图像的实时采集与显示，提供对放电状态的监视，可以作为分析实验结果的直观参照。中性粒子计数系统主要在实验期间完成对等离子体辐射出的中性粒子数量的计数，以便提供对离子能量计算所需要的数据。     

HT-6M装置H模放电的中性粒子研究

HT-6M托卡马克通过边界欧姆加热实现了改善约束的H模，利用中性粒子测量方法成功地研究了等离子体H模放电的中性粒子变化．观察到边界欧姆加热H模放电期间从等离子体逃逸的中性粒子比纯欧姆加热明显减少；约束改善后等离子体中心热区的中性原子密度下降，得到了反映等离子体约束改善的中性粒子特征．实验结果与其他诊断进行了比较和讨论 关键词：     

局部热力学平衡状态下的等离子体电导率计算

在ZollwegLiebermann模型(ZL模型)的基础上,结合高温条件下的量子机理作用,考虑了电子与中性粒子的碰撞关系,最终得出修正后的电导率模型,并对局部热力学平衡状态下的水中放电等离子体的粒子数密度及电导率进行了模拟计算.计算结果表明压力为定值的情况下,水中放电等离子体的总粒子数密度随温度变化呈下降趋势,温度达到15000 K时,一次电离达最大值.电导率随温度增加总体呈上升趋势,温度低于12000 K时,电子与中性粒子的碰撞起主导作用,而温度高于25000 K时,电子与离子的碰撞起主导作用.     

局部热力学平衡状态下的等离子体电导率计算

在Zollweg & Liebermann模型（Z&L模型）的基础上,结合高温条件下的量子机理作用,考虑了电子与中性粒子的碰撞关系,最终得出修正后的电导率模型,并对局部热力学平衡状态下的水中放电等离子体的粒子数密度及电导率进行了模拟计算.计算结果表明压力为定值的情况下,水中放电等离子体的总粒子数密度随温度变化呈下降趋势,温度达到15000 K时,一次电离达最大值.电导率随温度增加总体呈上升趋势,温度低于12000 K时,电子与中性粒子的碰撞起主导作用,而温度高于25000 K时,电子与离子的碰撞起主导作用.     

低温等离子体对材料的表面改性

 冷等离子体对材料的表面改性,通过放电等离子体来优化材料的表面结构,是一种非常先进的材料表面改性方法。冷等离子体的特殊性能可以对金属、半导体、高分子等材料进行表面改性,该技术已广泛应用于电子、机械、纺织等工程领域。等离子体是“物质的第四态”,它是由许多可流动的带电粒子组成的体系。等离子体的状态主要取决于它的化学成分、粒子密度和粒子温度等物理化学参量,其中粒子的密度和温度是等离子体的两个最基本参量。实验室中采用气体放电方式产生的等离子体主要由电子、离子、中性粒子或粒子团组成。     

利用离子声波朗道阻尼测量氧化物阴极放电中的离子温度

作为等离子体重要参数之一, 特别是在低温等离子体中离子温度的测量一直较为困难. 在磁化线性等离子体装置氧化物阴极脉冲放电条件下, 利用栅网激发离子声波, 通过测量波幅在朗道阻尼作用下随空间的演化, 利用阻尼长度是离子温度和电子温度的函数, 计算得到离子温度为0.3 eV. 测量值与国外类似装置利用光谱诊断所得结果基本相同.     

HT—6M装置中性束注入加热初步实验

一、引 言 在受控核聚变领域中,中性束注入是加热高温等离子体最有效方法之一。目前,几乎所有托卡马克实验中所获得高的温度,都是在有中性束注入情况下实现的。而用中性束注入加热托卡马克等离子体在国内尚属首次。 中性束注入系统的关键是离子源引出高能离子束,经过中性化室将高能离子束转变成高能中性束,并注入到装置中去加热等离子体,以提高等离子体的离子温度。 该系统涉及技术领域广,工程量大,经过多年艰苦努力,HT-6M装置中性束注入系统,终于进入实验阶段。本文介绍当50kW中性束注入HT-6M装置后,等离子体温度净增约80eV。     

基于EAST束发射光谱的中性束衰减特征研究

中性束注入(NBI)是托卡马克装置重要的辅助加热与电流驱动手段,中性原子的离化是决定中性束的加热(能量和粒子沉积剖面)和电流驱动效率的关键环节。通常情况下,利用背景等离子体参数与中性束参数模拟计算快的中性粒子与等离子体的离化,即中性束沉积过程,进而分析托卡马克中性束加热和电流驱动效果。束发射光谱是高能中性粒子注入等离子体后,与等离子体的电子、离子发生碰撞激发,中性粒子退激发过程中产生的一系列特征谱线,其束发射光谱强度受等离子体密度、温度、束能量、束密度等因素影响,可以利用束发射光谱强度变化研究中性束的衰减特性。在EAST托卡马克上通过实验测量中性束粒子与等离子体碰撞激发的光谱强度,分析得到了中性束在不同等离子体密度以及不同中性束能量下的衰减特性,并采用主动束光谱仿真与数值分析软件(SOS)进行了相应的模拟计算,研究表明实验测量与模拟计算结果两者具有较好的一致性,这验证了通过实验测量束发射光谱获取中性束衰减特征的可行性。     

红外激光和远红外激光的汤姆逊散射

在受控热核反应的研究中,等离子体的离子温度是实现受控“点火”的一个极重要的参数.应用红宝石激光的汤姆逊散射可以正确地测量等离子体的电子温度和电子密度.但要用来测量离子温度的话,则由于散射角太小,杂散光太大,在技术上变得非常困难.只有应用电荷交换的中性粒子能谱分析的方法才可以测量离子温度.可是,在较高的粒子密度或等离子体装置较大的情况下,由于等离子体的线度大于中性粒子的平均自由程,这种方法也就无法测量等离子体内部的离子温度.如果使用光谱分析的方法,由于存在杂质辐射,在技术上是很困难的.并且分辨率很差.因此,迄今为…     

振镜法测量等离子体离子温度

 离子温度是托卡马克等离子体一个重要参数，介绍了一套振镜扫描装置，该装置主要由0.5m单色仪和安装在出射狭缝前的振动的石英镜片组成，时间分辨率小于10ms，系统测量误差小于20eV。测量了HT-6M托卡马克CV(227.1nm)谱线的线形，并由谱线的多普勒展宽得出欧姆加热和离子回旋共振加热（ICRH）下的离子温度，结果表明ICRH期间离子温度由200eV升高到300eV。这套装置广泛应用在中小型托卡马克上。     

离子能量和沉积温度对离子束沉积碳膜表面形貌的影响

利用质量分离的低能离子束沉积技术,得到了非晶碳膜.所用离子能量为50—200eV,衬底温度从室温到800℃.在沉积的能量范围内,衬底为室温时薄膜为类金刚石,表面非常光滑;而600℃下薄膜主要是石墨成分,表面粗糙.沉积能量大于140eV,800℃时薄膜表面分立着高度取向的、垂直衬底表面、相互平行的开口碳管.用高分辨电子显微镜看到了石墨平面的垂直择优取向,离子的浅注入和应力是这种优先取向的主要机理. 关键词： 非晶碳 表面形貌 质量分离低能离子束     

Cathodoluminescence from gallium nitride implanted with arsenic or phosphorus

Phosphorus and arsenic impurities have been introduced into single crystal thin films of gallium nitride by ion implantation. New luminescence bands are observed at 2.85 eV for the phosphorus implant and at 2.58 eV for the arsenic implant. There is some evidence for charge carrier compensation. A band at 2.2 eV is associated with implantation damage and high temperature annealing.     

Surface defects created by low energy (20 < E < 240 eV) ion bombardment of Ge(001)

Surface defects created on Ge(001) exposed to low energy Xe ions are characterized by in situ scanning tunneling microscopy (STM). The temperature of the sample during ion bombardment is 165 C and ion energies range from 20 to 240 eV. The ion collisions create defects (vacancies and adatoms) which nucleate and form vacancy and adatom islands. For fixed total vacancy creation, the vacancy island number density increases with increasing ion energy: the vacancy island number density is 1.6 × 10⁻²⁰ cm⁻² for 40 eV ion bombardment and increases to 4.4 × 10⁻²⁰ cm⁻² for 240 eV ion bombardment. The increased nucleation rate for vacancies is attributed to clustering of defects. The sputtering yield of Ge(001) is also measured by STM. The sputtering yield for 20 eV ions is approximately 10⁻³ per ion but the net yield for surface defects (sum of adatoms and vacancies) is an order of magnitude higher, 10⁻², due to adatom-vacancy pair creation.     

Nucleus-electron model for states changing from a liquid metal to a plasma and the Saha equation

We extend the quantal hypernetted-chain (QHNC) method, which has been proved to yield accurate results for liquid metals, to treat a partially ionized plasma. In a plasma, the electrons change from a quantum to a classical fluid gradually with increasing temperature; the QHNC method applied to the electron gas is in fact able to provide the electron-electron correlation at an arbitrary temperature. As an illustrating example of this approach, we investigate how liquid rubidium becomes a plasma by increasing the temperature from 0 to 30 eV at a fixed normal ion density 1.03x10(22)/cm(3). The electron-ion radial distribution function (RDF) in liquid Rb has distinct inner-core and outer-core parts. Even at a temperature of 1 eV, this clear distinction remains as a characteristic of a liquid metal. At a temperature of 3 eV, this distinction disappears, and rubidium becomes a plasma with the ionization 1.21. The temperature variations of bound levels in each ion and the average ionization are calculated in Rb plasmas at the same time. Using the density-functional theory, we also derive the Saha equation applicable even to a high-density plasma at low temperatures. The QHNC method provides a procedure to solve this Saha equation with ease by using a recursive formula; the charge population of differently ionized species are obtained in Rb plasmas at several temperatures. In this way, it is shown that, with the atomic number as the only input, the QHNC method produces the average ionization, the electron-ion and ion-ion RDF's, and the charge population that are consistent with the atomic structure of each ion for a partially ionized plasma.     

HL—1M中性束注入系统研制及中性束加热初步实验

ＨＬ－１Ｍ 中性束注入系统是在国家“八六三计划”的支持下,由中俄合作研制的。介绍了中性束注入系统及其各个子系统的性能参数及调试结果,给出了中性束加热的初步实验结果     

Subthreshold sputtering at high temperatures

The sputtering of tungsten from a target at a temperature of 1470 K during irradiation by 5-eV deuterium ions in a steady-state dense plasma is discovered. The literature values of the threshold for the sputtering of tungsten by deuterium ions are 160–200 eV. The tungsten sputtering coefficient measured by the loss of weight is found to be 1.5×10^?4 atom/ion at a deuterium ion energy of 5 eV. Previously, such a sputtering coefficient was usually observed at energies of 250 eV. The sputtering is accompanied by a change in the target surface relief, i.e., by the etching of the grain boundaries and the formation of a wavy structure on the tungsten surface. The subthreshold sputtering at a high temperature is explained by the possible sputtering of adsorbed tungsten atoms that are released from the traps around the interstitial atoms and come to the target surface from the space between the grains. The wavy structure on the surface results from the merging of adsorbed atoms into ordered clusters.     

Ab initio calculations of thermal conductivity of metals with hot electrons

Warm dense matter (WDM) is a state of a substance with a solid-state density and temperature from 1 to 100 eV. Researchers believe that such a state exists in the cores of giant planets. Investigation of WDM is important for some applications, such as surface treatment on the nanometer scale, laser ablation, and the formation of the plasma sources of the X-ray radiation into the inertial synthesis. In this study, the conductivity and the thermal conductivity are calculated based on density functional theory and the Kubo-Greenwood theory. This approach was already used to simulate the transport properties in a broad range of densities and temperatures, and its efficiency has been demonstrated. The conductivity and the thermal conductivity of aluminum and gold are investigated. Both the isothermal state, when the electron temperature equals the ion temperature, and the two-temperature state, when the electron temperature exceeds the ion temperature, are considered. The calculations were performed for a solid body and liquid in the range of electron temperatures from 0 to 6 eV.     

Characteristics of the NASA Lewis Bumpy Torus Plasma Generated with Positive Applied Potentials

Experimental observations have been made during steady-state operation of the NASA Lewis Bumpy Torus experiment at input powers up to 150 kW in deuterium and helium gas, and with positive potentials applied to the midplane electrodes. This steady-state ion heating method utilizes a modified Penning discharge operated in a bumpy torus confinement geometry such that the plasma is acted upon by a combination of strong electric and magnetic fields. Experimental investigation of a deuterium plasma revealed electron temperatures from 14 to 140 eV and ion kinetic temperatures from 160 to 1785 eV. At least two distinct modes of operation exist, each of which is associated with a characteristic range of background pressure and electron temperature. Experimental data show that the average ion residence time in the plasma is virtually independent of the magnetic field strength.     

Angular distribution of electron temperature and density in a laser-ablation plume

The angular distribution of electron temperature and density in a laser-ablation plume has been studied for the first time. The electron temperature ranges from 0.1 to 0.5 eV and is only weakly dependent on the angle in the low-intensity range studied here. In contrast, the typical ion energy is about 2 orders of magnitude larger, and its angular distribution is more peaked about the target normal. The derived values of the electron density are in agreement with the measured values of ion density.