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1.
李宝祥  韩尧 《发光学报》1993,14(1):53-60
本文研究了单掺(Sm3+,Ce3+、Gd3+.Sb3+、双掺(Sm3++Ce3+、Sm3++Gd3+,Sm3++Sb3+)和兰掺(Sm3++Gd3++Ce3+)约四十余种不同玻璃的发射谱和激发谱.探讨了玻璃成份和掺杂离子浓度对Sm3+发光性质的影响以及Ce3+,Gd3+、Sb3+、Ce3++Gd3+对Sm3+的敏化作用。  相似文献   

2.
共沉淀法合成Sm3+掺杂的Sr2CeO4的荧光光谱   总被引:4,自引:0,他引:4  
以(NH4)2C2O4为沉淀剂,用Sr,Ce和Sm的硝酸盐为反应物,制备了Sr2CeO4:Sm的前驱体。将此前驱体烧结后,得到了Sm掺杂的Sr2CeO4白色荧光材料。其荧光光谱强度与烧结温度和Sm^3+的掺杂浓度密切相关,当烧结温度为1050℃以及Sm^3+的掺杂浓度为1mol%时,峰值为470nm的宽带以及Sm^3+在608和654nm的线谱发射最强。同直接在高温固相反应下得到的样品进行比较,其发射光谱强度大大提高。  相似文献   

3.
Understanding the luminescence of ZnO is very important for some applications. In spite of the many studies carried out, there are still some points concerning the origin of some of the luminescence emissions in ZnO crystals that require additional study; in particular, the role of extended defects remains to be a matter of controversy. We present here a cathodoluminescence analysis of the defects generated by Vickers indentation in hydrothermal HTT crystals. Special emphasis was paid to the luminescence band peaking around 3.3 eV. The origin of this band is a matter of controversy, since it has been related to different causes, extended defects being one of the candidates for this emission. The CL images were acquired around crystal defects. It is observed that the 3.3 eV emission is enhanced around the crystal defects; though it is also observed, but weaker, out of the defect regions, which suggests that there exist two luminescence emissions peaking very close to 3.3 eV. The two emissions, one related to structural defects and the other to the LO phonon replica of the free excitonic band, appear very close each other and their relative intensity should determine the shape of the spectrum.  相似文献   

4.
Ca(9)Lu(PO(4))(7):Ce (3+) and Ca (9)Lu (PO (4))(7):Pr (3+) polycrystalline materials were synthesized by solid state reaction at high temperature. The materials were characterized by powder x-ray diffraction (XRPD). The luminescence spectroscopy and the excited state dynamics of these compounds were investigated upon excitation with UV/VUV synchrotron radiation. Both materials showed efficient and fast 5d-4f emission upon direct VUV excitation into the 5d levels but only Ca(9)Lu(PO(4))(7):Ce (3+) revealed luminescence upon excitation across the bandgap. The decay kinetics of the 5d-4f emission upon VUV intra-center excitation is characterized by a decay time of 29?ns for Ce (3+) and 17 ns for Pr (3+) with no significant build-up after the excitation pulse. For the both compounds, no significant temperature dependence of the 5d-4f emission lifetime was observed within the range 8-300?K.  相似文献   

5.

Congruent Sr x Ba 1 m x Nb 2 O 6 (SBN, x=0.61) doped with Ce or Cr ions exhibits enhanced photorefractive properties and new spectral features like increased red sensitivity. Here special emphasis is placed on the luminescence features of doubly doped Ce+Cr SBN crystals. The luminescence excitation and emission spectra combined with the absorption of the impurities allow to draw conclusions about the origin of the charge carriers und their recombination. The well separated thermo-luminescence peaks detected and their spectral line shape in emission point to specific recombination processes following the thermal liberation of light-induced electron trapping centers: Nb 4+ polarons and VIS-centers created at low temperature under light irradiation. The thermal activation energy for the hopping motion of Nb 4+ polarons and of VIS-centers are estimated to be 0.18 - 0.02 v eV and 0.30 - 0.05 v eV respectively. Possible excitation and recombination mechanisms in SBN:Ce+Cr are discussed.  相似文献   

6.
Y_2SiO_5:Ce~(3+)(YSO:Ce)具有高密度、不吸潮以及良好的光输出和快速衰减的特性,是一种重要的闪烁材料。研究采用高温固相法制备Y_2SiO_5:Ce~(3+)+0.2%(YSO:Ce)。在低温及室温下,对闪烁体YSO:Ce的时间分辨发射光谱、激发光谱以及衰减曲线进行了测量和分析。YSO:Ce主要有两类发射,一是晶体的缺陷发射,发射中心在320 nm;二是掺杂的Ce~(3+)的5d→4f发射,发射中心在440 nm。只有当激发能量(E_x)大于材料带隙宽度(E_g)时才能够激发出晶体缺陷发射,对应慢速的激发发射过程,且低温时发射强度较大,当温度升高时有温度猝灭,在室温下时间分辨发射光谱中几乎观察不到晶体缺陷发射。对于发射中心位于440 nm Ce~(3+)的5d→4f能级发射,在60~300 nm范围内能够观察到多个激发峰,其中能量小于材料禁带宽度的激发是属于Ce~(3+)5d能级的直接激发带,对应快速的激发发射过程。在低温时能够观测到发光中心位于392和426 nm分立的发射峰,对应Ce~(3+)的5d→4f(~2F_(5/2),~2F_(7/2))的发射。当温度升高到室温时,光谱宽化,无法观测到分立的发射峰。在温度200和300 K时,当激发光的能量大于带隙宽度,衰减曲线有明显的上升沿,说明有能量传递给Ce~(3+)。  相似文献   

7.
采用高温熔融法制备了一系列Ce3+/Sm3+共掺透明微晶玻璃,并研究了其发光特性。在微晶玻璃中Ce3+呈现出基于4f-5d跃迁的较强的宽带蓝光发射,通过调节Ce3+/Sm3+离子的掺杂浓度,Ce3+/Sm3+离子共掺微晶玻璃发光的色度逐渐发生变化,当CeO2/Sm2O3掺杂的量比为1:1时,制得的微晶玻璃发光色坐标为(0.315, 0.296)。通过光谱和荧光衰减曲线,研究了Ce3+离子到Sm3+离子的能量传递,在SAZKNGC0.6S0.6微晶玻璃中,Ce3+离子向Sm3+离子传递能量效率约为20%。结果表明,Ce3+/Sm3+共掺微晶玻璃是白光LED的一种潜在基质材料。  相似文献   

8.
研究了ZnS粉末材料中Mn2+中心和Sm3+中心之间的相互作用.通过测量单独由Mn2+或Sm3+掺杂及Mn2+,Sm3+同时掺杂的ZnS粉末材料的发射光谱、激发光谱、发光衰减以及选择激发发光光谱,证实了Mn2+和Sm3+之间存在偶极子-偶极子相互作用的无辐射能量传递.同时还计算了能量传递几率和传递效率.  相似文献   

9.
A series of K3Gd1-x-y(PO4)2:xCe^3+, yTb^3+ phosphors are synthesized by the solid-sate reaction method. X-ray diffraction and photoluminescence spectra are utilized to characterize the structures and luminescence properties of the as-synthesized phosphors. Co-doping of Ce^3+ enhances the emission intensity of Tb^3+ greatly through an efficient energy transfer process from Ce^3+ to Tb^3+. The energy transfer is confirmed by photoluminescence spectra and decay time curves analysis. The efficiency and mechanism of energy transfer are investigated carefully. Moreover, due to the non- concentration quenching property of K3Tb(PO4)2, the photoluminescence spectra of K3Tb1-x(PO4)2:xCe^3+ are studied and the results show that when x = 0.11 the strongest Tb^3+ green emission can be realized.  相似文献   

10.
单斜结构纳米CePO4的控制合成与发光性能研究   总被引:1,自引:0,他引:1  
利用水热法,调节反应体系中PO3-4/Ce3+摩尔比,低温控制合成了单斜结构CePO4纳米棒及花状纳米团簇.用XRD,FE-SEM,DSC-TG和荧光光谱分析了产物的相结构、晶粒尺寸、形貌及发光性能.结果显示,随PO3-4/Ce3+摩尔比的增加,单斜结构CePO4的合成温度降低,其形貌由棒状演变为花状纳米团簇.当PO3-4/Ce3+摩尔比较低时,得到CePO4纳米棒;当PO3-4/Ce3+摩尔比较高时,得到花状纳米团簇.产物的荧光光谱分析显示一维纳米棒的光致发光性能优于花状纳米团簇.原料H3PO4可重复利用,降低了合成CePO4的成本.  相似文献   

11.
二维六方氮化硼(hBN)的点缺陷最近被发现可以实现室温下的单光子发射,而成为近年的研究热点.尽管其具有重要的基础和应用研究意义,hBN中发光缺陷的原子结构起源仍然存在争议.本文采用基于密度泛函理论的第一性原理计算,研究hBN单层中一种B空位附近3个N原子被C替代的缺陷(CN)3VB.在hBN的B空位处,3个N原子各自带一个在平面内的悬挂键及相应的未配对电子,而通过C替换可以消除未配对的电子.系统研究了(CN)3VB缺陷的几何结构、电子结构以及光学性质,结果表明,缺陷可以由一个对称的亚稳态经过原子结构弛豫变成1个非对称的、3个C原子连在一起的基态结构.缺陷的形成在hBN中引入了一些由缺陷悬挂σ键及重构的π键贡献的局域缺陷态.这些缺陷态可以导致能量阈值在2.58 eV附近的可见光内部跃迁.本文的工作有助于进一步理解hBN中点缺陷的构成及光学性质,为实验上探讨发光点缺陷的原子结构起源及其性质提供理论依据.  相似文献   

12.
149Sm nuclear resonant inelastic scattering was carried out in a charge density wave compound SmNiC2. We have investigated temperature dependences of the Sm partial phonon density of states and recoil-free fraction at the Sm site and the average sound velocity estimated from the Sm partial density of states. The Sm partial density of states exhibits temperature dependence, suggesting that the phonon modes between 20 and 25 meV may correlate with the charge density wave. Temperature dependence of the recoil-free fraction is difficult to prove the correlation with either the charge density wave or ferromagnetic ordering. The average sound velocity obtained by the Sm partial phonon density of states exhibits temperature dependence, agreeing qualitatively with very recent elastic constant measurements.  相似文献   

13.
硼酸盐玻璃中某些稀土离子的浓度效应及其能量传递过程   总被引:2,自引:0,他引:2  
本文系统地报道了硼酸盐玻璃中Ce3+、Sm33+、Eu3+、Ga3+、Tb3+、Dy3+浓度效应,观察到Eu3+、Gd3+、Tb3+在硼酸盐玻璃中随浓度增加其发光强度增强,而Ce3+、Sm3+、Dy3+当其浓度增加到一定数值后,发光强度反而减弱,初步探讨了不同浓度效应的原因.本文还观察到硼玻璃中某些稀土离子对Eu3+、Tb3+离子发光的敏化作用,及讨论了Gd3+和Eu3+、Tb3+之间的能量传递过程,计算其能量传递的效率和几率.估计了能量传递的规律机理.  相似文献   

14.
许武  张新夷 《发光学报》1983,4(4):14-22
前一阶段我们比较系统地研究了ZnS:Mn2+,Sm3+材料中Mn2+中心和Sm3+中心之间的能量传递。通过测量ZnS:Mn2+、ZnS:Sm3+和ZnS:Mn2+,Sm3+三种材料的发射光谱、激发光谱、选择激发发光光谱,证实了Mn2+中心和Sm3+中心之间存在偶极—偶极相互作用的无辐射能量传递。为了进一步研究Mn2+中心和Sm3+中心之间的相互作用及其物理特点,我们又仔细测量了上述三种不同类型材料的分时光谱,这不仅可以更清楚地了解激发停止后Mn2+中心和Sm3+中心之间的相互作用,而且有效地解决了Mn2+中心发射光谱和Sm3+中心某些特征光谱线交叠引起的测量发光衰减的困难。  相似文献   

15.
Self consistent charge and spin polarized local spin-density approximation functional theory calculations based on the discrete variational method have been performed for RCo5(R=Y, La, Ce, Pr, Nd, Sm, Gd, and Tb) compounds. The partial density of states of the Pr atom in the PrCo6Co12 cluster is established to be strikingly similar to that of the Ce atom in the CeCo6Co12 cluster, supporting the suggestion that the Pr atom is valence fluctuating. The radii <r4f> and <r4f2> of the 4f electrons of the R atom from La to Tb, except Ce, show the lanthanide contraction. The crystalline electric field (CEF) parameter A02 at the R site is calculated using a real charge distribution ρ(R) in the cluster, except for Pr and Nd, and is in agreement with that evalu ated based on the single-ion model. This result shows that the CEF parameter A02 is mainly determined by the near electronic structure. There exists a hybridization in a certain degree between the light rare-earth R-4f and Co-3d orbitals in some single-electron-molecular-orbitals, which are n ear the Fermi energy level and occupied by electrons. For light rare-earths the R-4f electrons in R Co6Co12(R=Y, La, Ce, Pr, Nd, and Sm) clu sters are not localized entirely and a small amount of the R-4f electrons have itinerant properties.  相似文献   

16.
Ln(BO_3,PO_4)[Ln=La,Y]基质中Ce~(3+)、Tb~(3+)、Gd~(3+)的光谱   总被引:2,自引:0,他引:2  
研究了硼磷酸镧和硼磷酸钇基质中Ce3 +、Tb3+、Gd3+的发射光谱和激发光谱。结果表明 :La(BO3,PO4 ) :Ce ,Tb体系中加入钆后 ,Ce3+的发射降低 ,Tb3+的发射增强 ;Y(BO3,PO4 ) :Ce ,Tb体系中加入钆后 ,Ce3+和Tb3 +的发射均增强 ,且前者增加的幅度高于后者。因此在La(BO3,PO4 ) :Ce ,Tb ,Gd体系中Gd3+离子起着能量传递中间体和敏化剂的作用 ;在Y(BO3,PO4 ) :Ce,Tb ,Gd体系中Gd3 +离子只起敏化剂作用 ,并且阻碍Ce3+→Tb3+的能量传递。与Y(BO3,PO4 ) :Ce,Tb ,Gd相比 ,La(BO3,PO4 ) :Ce,Tb ,Gd对紫外吸收强 ,2 5 4nm激发下发出的光绿色纯度高 ,强度大 ,更适合做荧光灯中的绿粉  相似文献   

17.
Ln(BO3,PO4)[Ln=La,Y]基质中Ce^3+、Tb^3+、Gd^3+的光谱   总被引:3,自引:0,他引:3  
研究了硼磷酸镧和硼磷酸钇基质中Ce^3 、Tb^3 、Gd^3 的发射光谱和激发光谱。结果表明:La(BO3,PO4):Ce,Tb体系中加入钆后,Ce^3 的 发射降低,Tb^3 的发射增强,Y(BO3,PO4):Ce,Tb体系中加入钆后,Ce^3 和Tb^3 的发射均增强,且前者增加的幅度高于后者。因此在La(BO3,PO4):Ce,Tb,Gd体系中Gd^3 离子起着能量传递中间体和敏化剂的作用;在Y(BO3,PO4):Ce,Tb,Gd体系中Gd^3 离子只起敏化剂作用,并且阻碍Ce^3 →Tb^3 的能量传递。与Y(BO3,PO4):Ce,Tb,Gd相比,La(BO3,PO4):Ce,Tb,Gd对紫外吸收强,254nm激发下发出的光绿色纯度,强度大,更适合做荧光灯中的绿粉。  相似文献   

18.
本文研究了单掺(Sm~(3+),Ce~(3+)、Gd~(3+).Sb~(3+)、双掺(Sm~(3+)+Ce~(3+)、Sm~(3+)+Gd~(3+),Sm~(3+)+Sb~(3+))和兰掺(Sm~(3+)+Gd~(3+)+Ce~(3+))约四十余种不同玻璃的发射谱和激发谱.探讨了玻璃成份和掺杂离子浓度对Sm~(3+)发光性质的影响以及Ce~(3+),Gd~(3+)、Sb~(3+)、Ce~(3+)+Gd~(3+)对Sm~(3+)的敏化作用。  相似文献   

19.
Low temperature(77 K)photoluminescence measurements have been performed on different GaAs substrates to evaluate the GaAs crystal quality.Several defect-related luminescence peaks have been observed,including 1.452 eV,1.476 eV,1.326 eV peaks deriving from 78 meV Ga_(As) antisite defects,and 1.372 eV,1.289 eV peaks resulting from As vacancy related defects.Changes in photoluminescence emission intensity and emission energy as a function of temperature and excitation power lead to the identification of the defect states.The luminescence mechanisms of the defect states were studied by photoluminescence spectroscopy and the growth quality of GaAs crystal was evaluated.  相似文献   

20.
那镓  李有谟 《发光学报》1987,8(1):18-24
本文报道Ce3+掺杂和Ce3+—Tb3+、Ce3+—Eu3+共掺杂的六方NaLnF4(Ln=La,Gd或Y)发光体的研究结果:氟配位环境使Ce3+在300nm附近发射并有很低的猝灭浓度;阳离子缺陷发光中心可能形成于NaGdF4基质中并被Ce3+—Gd3+共同敏化;Ce3+的发光可以因Tb3+掺杂而增强,反过来Ce3+亦会使Tb3+的5D3/5D4发射强度比减小;Ce3+含量增加使Eu3+的5D2/5D1及5D2/5D0发射强度比减小,这与Ce3+的2F5/2→2F7/2跃迁和Eu3+的5D2→D1跃迁能级差匹配而产生共振能量传递有关。  相似文献   

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