Coercive field behavior of permalloy antidot arrays based on self-assembled template fabrication

High-density magnetic antidot arrays have been fabricated by deposition of Fe₂₀Ni₈₀ thin films on self-assembled nanoporous alumina membranes (NAM) with high-order hexagonal symmetry. The magnetic properties induced by the size and the geometry configuration of the holes introduced in a Fe₂₀Ni₈₀ thin film are discussed based on hysteresis loops measured as a function of temperature. The precursor NAMs have pore diameters ranging between 35 and 95 nm (55 and 75 nm after the film deposition) and a lattice parameter of 105 nm. An enormous increase of coercitivity, as compared with the corresponding continuous films, was observed for temperatures between 2 and 300 K. This effect depends on the size and surface density of holes in the Fe₂₀Ni₈₀ antidot arrays. Rutherford backscattering spectrometry (RBS) measurements were performed in order to better clarify the magnetic material that was eventually deposited within the NAM pores.     

Perpendicularly oriented barium ferrite thin films with low microwave loss,prepared by pulsed laser deposition

Barium ferrite(Ba M) thin films are deposited on platinum coated silicon wafers by pulsed laser deposition(PLD).The effects of deposition substrate temperature on the microstructure,magnetic and microwave properties of Ba M thin films are investigated in detail.It is found that microstructure,magnetic and microwave properties of Ba M thin film are very sensitive to deposition substrate temperature,and excellent Ba M thin film is obtained when deposition temperature is 910℃ and oxygen pressure is 300 m Torr(1 Torr = 1.3332×10~2Pa).X-ray diffraction patterns and atomic force microscopy images show that the best thin film has perpendicular orientation and hexagonal morphology,and the crystallographic alignment degree can be calculated to be 0.94.Hysteresis loops reveal that the squareness ratio(M_r/M_s) is as high as 0.93,the saturated magnetization is 4004 Gs(1 Gs = 10~4T),and the anisotropy field is 16.5 kOe(1 Oe = 79.5775 A·m~(-1)).Ferromagnetic resonance measurements reveal that the gyromagnetic ratio is 2.8 GHz/kOe,and the ferromagnetic resonance linewith is108 Oe at 50 GHz,which means that this thin film has low microwave loss.These properties make the Ba M thin films have potential applications in microwave devices.     

Microwave magnetic properties of soft magnetic thin films

We review our works that focus on the microwave magnetic properties of metallic,ferrite and granular thin films.Soft magnetic material with large permeability and low energy loss in the GHz range is a challenge for the inforcom technologies.GHz magnetic properties of the soft magnetic thin films with in-plane anisotropy were investigated.It is found that several hundreds of permeability at the GHz frequency was achieved for Co100-xZrx and Co90Nb10 metallic thin films because of their high saturation magneti...     

High pyroelectric Ba0.65Sr0.35TiO3 thin films with Ba0.65Sr0.35RuO3 seeding-layer for monolithic ferroelectric bolometer

Ba_0.65Sr_0.35TiO₃ (BST) thin films were deposited by RF sputtering with a very thin Ba_0.65Sr_0.35RuO₃ (BSR) seeding-layer on Pt/Ti/SiO₂/Si substrate. The crystallization of BST thin films and the surface morphology of BSR seeding-layer were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. XRD patterns show that the BSR seeding-layer affected the orientation of BST thin film, which is highly a-axis textured. It was also found that the BSR seeding-layer had a marked influence on the dielectric properties of BST thin films. Comparing with BST thin films directly deposited on Pt electrode, the dielectric relaxation can be suppressed and dielectric constant increased due to a possible reduction of interface oxygen vacancies at BST/BSR interface. Moreover, J–V measurement indicates that the leakage current density of BST thin films on BSR seeding-layer were greatly reduced compared with that of BST thin films directly on Pt electrodes. The pyroelectric coefficient of BST thin films with BSR seeding-layer is 7.57 × 10⁻⁷ C cm⁻² K⁻¹ at 6 V/μm at room temperature (RT). Our results reveal that high pyroelectric property of BST thin film could be achievable using BSR seeding-layer as a special buffer.     

The effect of hydrogen on copper nitride thin films deposited by magnetron sputtering

Copper nitride thin films were deposited on Si (1 0 0) wafers by reactive magnetron sputtering at various H₂/N₂ ratios. X-ray diffraction measurements show that the films are composed of Cu₃N crystallites with anti-ReO₃ structure and exhibit preferred orientation of [1 0 0] direction. Although the relative composition of the films has obviously changes with the H₂/N₂ ratios, the orientations of the films keep almost no changes. However, the grain size, lattice parameter and composition of the films are strongly dependent on the H₂/N₂ ratios. The copper nitride films prepared at 10% H₂/N₂ ratios show poor stability and large weight gain compared to the copper nitride films prepared at 0% H₂/N₂ ratios.     

Enhanced magnetic properties of Nd–Fe–B thin films crystallized by heat treatment

Nd₂Fe₁₄B Φ phase crystallites were formed in Nd_16.7Fe_65.5B_17.8 thin films prepared by RF sputtering with subsequent heat treatment. The 2 μm-thick films were deposited onto 0.1 mm Mo sheets at an average substrate temperature (T_s) of 365°C. The enhanced magnetic properties of the magnetically anisotropic thin films were investigated using different heating rates (h_r) of 10°C, 20°C, 50°C and 100°C/min in an annealing experiment. Transformation from the amorphous phase to the crystalline phase is clearly manifested by the formation of fine crystallites embedded as a columnar matrix of Nd₂Fe₁₄B phase. High-resolution scanning electron microscope data of the cross-section of the annealed films show columnar stacking of Nd₂Fe₁₄B crystallites with sizes <500 nm. Transmission electron microscope observations revealed that the microstructure of these films having out-of-plane magnetization consists of uniformly distributed Φ phase with grain size around 400 nm together with small Nd rich particles. This grain size of Φ phase is comparable to the single domain particle diameter of Nd₂Fe₁₄B. Significant change in _iH_c, 4πM_r and 4πM_s with h_r was confirmed. Annealing conditions with a heating rate of 50°C/min to an annealing temperature (T_a) of 650°C for 30 min was consequently found to give optimum properties for the NdFeB thin films. The resulting magnetic properties, considered to be the effect of varying h_r were _iH_c= 1307–1357 kA/m, 4πM_r=0.78–1.06 T and 4πM_s=0.81–1.07 T.     

The effect of rare earth substitution on the magnetic properties of Ni0.5Zn0.5MxFe2−xO4 (M: rare earth)

Variation of the complex permeability with frequency of Ni_1−xZn_xFe₂O₄ (x=0.5, 0.6 and 0.7) prepared by a combustion method has been measured over a wide range of frequency, up to 1.8 GHz. Zn content improves permeability but moves the onset of resonance to lower frequencies.

The influence on some properties of samples prepared by the insertion of small amounts of Ruthenium, Yttrium and rare-earth cations into the Ni_0.5Zn_0.5M_xFe_2−xO₄ ferrite has been also investigated. Relative losses and Curie temperature of all the samples have been measured. Ferrites substituted with Ru and Gd improve microwave behavior compared to non-substituted samples.     

Brillouin light scattering in CMR manganite films

Thin films of La_0.7A_0.3MnO₃ (A=Ce, Ca, and Sr) and La_0.55Ho_0.15Sr_0.3MnO₃ manganites have been investigated by Brillouin light scattering at room temperature. The phonon spectra for the Ce-doped sample showed an interesting three-peak structure at frequency shifts of 11.4, 13.8 and 16.1 GHz, with negligible dispersion and in-plane anisotropy. For a fixed scattering angle, the phonon spectrum of the other samples showed a broad peak at a smaller frequency (<10 GHz). It is shown that the observed phonon frequency decreases with increasing ionic character of the La–Mn bonds resulting from the replacement of part of the atoms of La by Ce, Ca, Sr and Ho.     

Temperature dependence of ESR anisotropy in La7/8Sr1/8MnO3

We report X-ray diffraction, DC-susceptibility, electron spin resonance (ESR), and dilatometry measurements carried out on an La_7/8Sr_1/8MnO₃ single crystal. Thermal expansion was measured along different crystallographic axes using a three-terminal dilatometer. The sharp anomalies observed in the temperature dependence of Δl/l allowed us to locate the Jahn–Teller transition at T_JT=285(1) K. ESR experiments were carried out in the paramagnetic regime from 220 to 570 K, at 9.4 GHz. We measured the ESR line width ΔH_pp(T) with the magnetic field parallel to the crystallographic directions [1 0 0] and [0 0 1], referred to the orthorhombic (Pbnm) axes. We correlate the temperature dependence of ΔH_pp with the structural changes of the lattice.     

Hydroxyapatite coating on porous silicon substrate obtained by precipitation process

Hydroxyapatite Ca₁₀(PO₄)₆(OH)₂ (HAP) is known as a bioactive and biocompatible material, HAP coatings were used to improve the biocompatible of substrate by many researcher, In this work, HAP thin films on porous silicon (PS) substrates have been prepared by aqueous precipitation method with rapid thermal annealing (RTA) processes. The HAP films had been prepared under the annealing temperature ranging from 300 to 1000 °C. By the measurement of X-ray diffraction (XRD), it was found that for the crystallinity optimization, the heat-treatment at 850–950 °C for 1 h would be favorable. Atomic force microscopy (AFM) and scanning electron microscope (SEM) measurements reveal a dense and smooth surface of the HAP film, and tightly adherence of the coating on porous silicon substrate after sintered. Thus, by this method, porous silicon could be increased its bioactivity and so that could be used in the biomedical area.     

Magnetic anisotropic properties in Fe3O4 and CoFe2O4 ferrite epitaxy thin films

Epitaxial thin films of Fe₃O₄ and CoFe₂O₄ on MgO (0 0 1) substrates were grown by molecular beam epitaxy at low temperature growth process. Magnetization and hysteresis loop of both films were measured to investigate magnetic anisotropic properties at various temperatures. Anomalous magnetic properties are found to be correlated with crystalline, shape, and stress anisotropies. The Fe₃O₄ film below Verwey structural transition has a change in crystal structure, thus causing many anomalous magnetic properties. Crystalline anisotropy and anomalous magnetic properties are affected substantially by Co ions. The saturation magnetization of Co–ferrite film becomes much lower than that of Fe₃O₄ film, being very different from the bulks. It indicates that the low temperature growth process could not provide enough energy to have the lowest energy state.     

Scaling behavior of mixed-state hall effect in MgB2 thin films

The Hall resistivity (ρ_xy) and the longitudinal resistivity (ρ_xx) in c-axis-oriented superconducting MgB₂ thin films have been investigated in extended fields up to 18 T. We have observed a scaling behavior between the Hall resistivity and the longitudinal resistivity, , where the exponent (β) is observed to be independent of the temperatures and the magnetic fields. For a wide magnetic field region from 1 to 18 T and a wide temperature region from 10 to 28 K, a universal power law with β = 2.0 ± 0.1 was observed in c-axis-oriented MgB₂ thin films. These results can be well interpreted by using recent models.     

A comparison of FePt thin films with HfO2 or MnO additive

The influence of oxide additives on the magnetic and structural properties of FePt L1₀ thin films has been studied. FePt films with HfO₂ additive grown on a 5 nm MgO buffer showed a primarily random texture for both as-deposited and annealed samples. The average grain size was limited to 10 nm and the perpendicular coercivity was 1.3 kOe for a 10 nm thick FePt +20% HfO₂ film annealed at 650°C for 10 min. In direct contrast, MnO additive neither limited grain size nor L1₀ ordering in annealed FePt films. A 10 nm thick FePt+20% MnO film grown on a 5 nm MgO buffer showed a unique discontinuous microstructure composed of clusters of (0 0 1) textured L1₀ grains after being annealed at 650°C for 10 min. The average size of the grains making up these clusters was 50 nm and the perpendicular coercivity of the film exceeded 7 kOe.     

Film thickness dependence of the magnetic resonance in Fe–SiO2 nanocomposites

The magnetic properties of Fe–SiO₂ nanogranular composite thin films were studied as a function of film thickness and Fe concentration, f, using ferromagnetic resonance at X-band (9.4 GHz) and Q-band (35 GHz). Films with an Fe volume percent ranging from 17% to 70% were fabricated from a mosaic target using RF sputtering techniques. Film thickness was varied between 10 and 200 nm. From measurements made at room temperature with the external field applied parallel and perpendicular to the film plane, it was possible to determine an almost linear dependence of the effective anisotropy field with Fe concentration. Small differences observed between X- and Q-band, specially at low f, were attributed to the effects that the different fields applied during the experiment cause on the magnetic state of the sample. No systematic change of the effective field or the g value was observed in films of different thickness. The absorption line width, on the other hand, was found to depend on film thickness indicating a larger distribution of particle shape and size with increasing film thickness. A maximum in the line width was observed around f30–35% and is probably caused by the transition from single domain ferromagnetic clusters to superparamagnetic particles.     

Giant magnetoimpedance in FM/SiO2/Cu/SiO2/FM films at GHz frequencies

We study the magnetic properties at high frequency of new structures of the tri-layer samples. The magnetoimpedance effect was analyzed in FM/i/Cu/i/FM sandwiched layers, where the ferromagnetic layer (FM) is, in fact, a multilayered film [F (10 nm)+Cu (1 nm)]×50 and F is the amorphous ferromagnetic alloy Fe_73.5Cu₁Nb₃Si_13.5B₉ and i is an isolating layer produced by magnetron sputtering. The effect of, both, the probe current frequency (in the range 10 MHz–1.8 GHz) and the dimensions of the magnetic and non-magnetic layers of the MI response were investigated. A comparison between samples with and without the isolating layer is discussed. MI ratios of 220% were obtained for samples at 180 MHz with a ferromagnetic and Cu width layers of 2 and 1 mm, respectively.     

Formation of high quality gallium nitride thin films on Ga-diffused Si(1 1 1) substrate

High quality gallium nitride thin films have been successfully grown on the Ga-diffused Si(1 1 1) substrates through ammoniating Ga₂O₃ thin films deposited by r.f. magnetron sputtering. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), atomic force microscope (AFM) and photoluminescence (PL) were used to characterize the synthesized samples. The analyses reveal that the formed films are high quality polycrystalline hexagonal gallium nitride. The as-formed GaN films show a flat surface topography with RMS roughness varied from 29 to 48 Å. The strong near-band-edge-emission peak around 368 nm was observed at room temperature. This is a novel method to fabricate GaN thin films based on the direct reaction between Ga₂O₃ and NH₃ on the Ga-diffused Si(1 1 1) substrates.     

High-temperature ferromagnetism in Zn1−xMnxO semiconductor thin films

Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in Zn_1−xMn_xO thin films grown on Al₂O₃ and MgO substrates. The magnetic properties depended on the exact Mn concentration and the growth parameters. In well-characterized single-phase films, the magnetic moment is 4.8 μ_B/Mn at 350 K, the highest moment yet reported for any Mn doped magnetic semiconductor. Anomalous Hall effect shows that the charge carriers (electrons) are spin-polarized and participate in the observed ferromagnetic behavior.     

镧掺杂BaSnO3薄膜的电学和光学特性

利用射频磁控溅射法在(LaAlO₃)_0.3(SrAl_0.5Ta_0.5O₃)_0.7 (001)单晶基底上生长了镧掺杂BaSnO₃外延薄膜. 通过Hall效应和热电势测量证实了镧掺杂BaSnO₃薄膜具有n型简并半导体特征, 并且基于载流子浓度和Seebeck系数计算出电子的有效质量为0.31m₀ (m₀为自由电子质量). 镧掺杂BaSnO₃薄膜在可见波段具有良好的透明性(透过率大于73%). 基于介电模型对薄膜的透过率曲线进行拟合, 从拟合结果中不仅得到了薄膜的厚度为781.2 nm, 能带宽度为3.43 eV、 带尾宽度为0.27 eV和复光学介电常数随波长的变化规律, 而且也强力地支持了基于电学参数计算电子有效质量的正确性.     

The influence of the geometry of micro-patterned thin films on the effective permeability and resonance frequency by domains development

For the application in high-frequency micromagnetic devices, the permeability and resonance frequency of ferromagnetic components is of high interest. It is dominantly influenced by different factors, the external field and direction and the domain distribution, shape and orientation. By the use of micromagnetic simulation, the domain pattern in films was determined and the effective permeability was calculated. The results of the calculations were compared with the domain shape of patterned microstructures of thin FeCoTaN-films, which were deposited onto oxidised silicon substrates by reactive r.f.-magnetron sputtering by employing 6-in Fe₃₇Co₄₆Ta₁₇ targets. To achieve a high-frequency suitability, the films have to be annealed in a static magnetic field of 50 mT between 400 and 500 °C, which are typical temperatures used in CMOS processes, to induce an in-plane uniaxial anisotropy needed for the high-frequency performance. Magnetic softness was obtained by producing amorphous or nanocrystalline films, and additionally, by aspiring low magnetocrystalline anisotropies for, e.g., certain Fe/Co fractions. The unpatterned films with a lateral dimension of 5×5 mm² were measured in a strip line permeameter in a frequency range up to 5 GHz and exhibited ferromagnetic resonance frequencies between 2 and 2.5 GHz within a low-loss permeability spectrum (low width of imaginary part of permeability). For possible integrations in passive microelectronic components the films were patterned to a few tenths of micrometers by near ultra-violet lithography and plasma beam etching, and then consequently annealed to obtain the static and dynamic magnetic properties. To influence the amount of closure domains, designs were conceived to influence the domain formation by creating additional internal boundaries. As a result, the ferromagnetic resonance frequency and the effective permeability are strongly driven by internal and external boundaries.     

Low-temperature AC conductivity of Bi2Sr2CaCu2O8+δ

We report measurements of anamolously large dissipative conductivities, σ₁, in Bi₂Sr₂CaCu₂O_8+δ at low temperatures. We have measured the complex conductivity of Bi₂Sr₂CaCu₂O_8+δ thin films at 100–600 GHz as a function of doping from the underdoped to the overdoped state. At low temperatures there exists a residual σ₁ which scales with the T=0 superfluid density as the doping is varied. This residual σ₁ is larger than the possible contribution to σ₁ from a thermal population of quasiparticles (QP) at the d-wave gap nodes.