Cr掺杂ZnO纳米线电子性质和磁性质

本文采用第一性原理密度泛函理论系统的研究了Cr原子单掺杂和双掺杂两种尺寸ZnO纳米线的电子性质和磁性质.所有掺杂纳米线的形成能都比纯纳米线的形成能低,表明掺杂增强了纳米线的稳定性.研究发现Cr原子趋于替代纳米线表面的Zn原子.所有掺杂纳米线都显示了金属性.纳米线的总磁矩主要来源于Cr原子3d轨道的贡献.由于杂化,相邻的O原子和Zn原子也产生了少量自旋.在超原胞内,Cr和O原子磁矩反平行排列,表明它们之间是反铁磁耦合.表面双掺杂纳米线铁磁态能量比反铁磁态能量低149 meV,表明Cr掺杂ZnO纳米线可能获得室温铁磁性.     

C掺杂ZnO纳米线的磁性研究

运用第一性原理方法研究了C掺杂ZnO纳米线的电子性质和磁性质.研究发现C原子趋于替代纳米线表面的O原子.所有掺杂纳米线显示了半导体特性.纳米线的总磁矩主要来源于C原子2p轨道的贡献.由于杂化,相邻的Zn原子和O原子也产生了少量自旋.在超原胞内,C、Zn和O原子磁矩平行排列,表明它们之间是铁磁耦合.铁磁态和反铁磁态的能量差达到了186meV,表明C掺杂ZnO纳米线可能存在室温铁磁性,在自旋电子学领域有很大应用前景.     

Co掺杂闪锌矿ZnO的磁性和光学性质

采用自旋极化密度泛函理论方法对Co掺杂闪锌矿ZnO的能带结构、态密度、磁学和光学属性进行了研究.计算结果显示:Co掺杂闪锌矿ZnO的基态是反铁磁态,具有金属性特征;而铁磁态具有半金属性特征.铁磁耦合在费米能级附近出现了明显的自旋劈裂现象,表现出明显的不对称性和强烈的Co 3d和O 2p杂化效应.磁矩主要来源于Co 3d轨道电子以及部分近邻耦合的O 2p轨道电子,大小与Co原子的掺杂位置有关.光学性质计算结果显示,Co掺杂闪锌矿ZnO在可见光范围内都有较强的光吸收能力,吸收峰在高能区发生了红移现象.理论计算结果表明,Co掺杂闪锌矿ZnO或许是一种优异的磁光材料.     

过渡金属掺杂氧化锌团簇的物性研究

本文采用第一性原理密度泛函理论研究了过渡金属（TM）原子Cr和Fe单掺杂和双掺杂(ZnO)12团簇的结构和磁性质。我们考虑了替代掺杂和间隙掺杂。结果表明Cr 和 Fe间隙掺杂团簇结构最稳定。团簇磁矩主要来自TM原子3d态的贡献,4s 和4p 态也贡献了一小部分磁矩。由于轨道杂化,相邻的Zn和O原子上也产生少量自旋。最近邻TM原子间的磁性耦合,主要由两个TM原子之间的直接短程铁磁耦合和TM和O原子之间通过p-d杂化产生的反铁磁耦合这两种相互作用的竞争来决定。不同TM原子掺杂团簇的总磁矩与TM原子种类以及掺杂位置有关,说明在(ZnO)12团簇中掺杂不同TM原子在可调磁矩的磁性材料的领域有潜在应用价值。     

Mn掺杂ZnO纳米线磁性质的第一性原理研究

本文采用第一性原理方法系统研究了Mn原子单掺杂和双掺杂ZnO纳米线的稳定性和磁性质.所有掺杂纳米线的束缚能都为负值,表明掺杂增强了纳米线的稳定性.表面掺杂纳米线显示了直接带隙半导体特性,而中间掺杂纳米线显示了间接带隙半导体特性.纳米线的总磁矩主要来源于Mn原子3d轨道的贡献.由于杂化,相邻的O原子和Zn原子也产生了少量自旋.在超原胞内,Mn原子和O原子磁矩平行排列,表明它们之间是铁磁耦合.     

Co掺杂(ZnO)12团簇的结构和磁性质

采用第一性原理密度泛函理论系统地研究Co原子单掺杂和双掺杂(ZnO)₁₂团簇的结构和磁性质.考虑三种掺杂方式:替代掺杂,外掺杂和内掺杂.首先比较各种掺杂团簇的稳定性.结果表明,不管是单掺杂还是双掺杂,外掺杂团簇都是最稳定结构.在结构优化的基础上,对掺杂的(ZnO)₁₂团簇进行磁性计算.发现团簇磁矩主要来自Co-3d态的贡献,4s和4p态也贡献了一小部分磁矩.由于轨道杂化,相邻的Zn和O原子也产生少量自旋.Co原子之间的磁性耦合由直接的Co-Co反铁磁耦合和Co和O原子之间通过p-d杂化产生的铁磁耦合这两种相互作用的竞争决定.研究发现外双掺杂团簇存在铁磁耦合,在纳米量子器件有潜在的应用价值.     

Cr掺杂ZnS纳米管结构和磁性质（英文）

采用第一性原理密度泛函理论系统研究Cr原子单掺杂和双掺杂单壁Zn S纳米管的结构和磁性质.研究发现掺杂纳米管的形成能比纯纳米管的形成能低,说明掺杂过程是放热的.单掺杂纳米管的总磁矩主要来自Cr原子3d态的贡献.结果表明Cr原子掺杂单壁Zn S纳米管趋向于铁磁态.但铁磁态和反铁磁态的能量差仅为0.036 e V.为获得室温铁磁性,我们用一个C原子替代掺杂体系中的一个S原子.计算发现铁磁态的能量比反铁磁态低0.497e V.表明此掺杂体系可能获得室温铁磁性.     

钒掺杂硫化锌团簇稳定性和磁性质研究

本文采用密度泛函理论研究了V原子单掺杂和双掺杂(ZnS)12团簇的几何结构和能量稳定性.我们考虑了三种掺杂方式:替代掺杂,外掺杂和内掺杂.单掺杂时,替代掺杂团簇是最稳定结构,而对于双掺杂,外掺杂团簇是最稳定结构.团簇磁矩主要来自V-3d态的贡献,4s和4p态也贡献了一小部分磁矩.由于轨道杂化,相邻的Zn和S原子上也产生少量自旋.结果显示V原子间的磁性耦合是短程相互作用.相邻V原子之间的磁性耦合由直接的V-V反铁磁耦合和两个V和S原子之间通过p-d杂化产生的铁磁耦合这两中相互作用的竞争来决定.     

钒掺杂硫化锌团簇稳定性和磁性质研究

本文采用密度泛函理论研究了V原子单掺杂和双掺杂(ZnS)12团簇的几何结构和能量稳定性。我们考虑了三种掺杂方式：替代掺杂,外掺杂和内掺杂。单掺杂时,替代掺杂团簇是最稳定结构,而对于双掺杂,外掺杂团簇是最稳定结构。团簇磁矩主要来自V-3d态的贡献,4s和4p态也贡献了一小部分磁矩。由于轨道杂化,相邻的Zn和S原子上也产生少量自旋。结果显示V原子间的磁性耦合是短程相互作用。相邻V原子之间的磁性耦合由直接的V-V反铁磁耦合和两个V和S原子之间通过p-d杂化产生的铁磁耦合这两中相互作用的竞争来决定。     

Cr掺杂ZnSe团簇稳定性和磁性质

本文采用密度泛函理论研究了Cr原子单掺杂和双掺杂(ZnSe)_(12)团簇的结构、电子性质和磁性质.考虑了三种掺杂方式:替代掺杂,外掺杂和内掺杂.单掺杂时,外掺杂团簇是最稳定结构,而对于双掺杂,内掺杂团簇是最稳定结构.团簇磁矩主要来自Cr-3d态的贡献,4s和4p态也贡献了一小部分磁矩.由于轨道杂化,相邻的Zn和Se原子上也产生少量自旋.结果显示Cr原子间的磁性耦合是短程相互作用.     

氮掺杂(1120) ZnO 薄膜磁性质研究

采用基于密度泛函理论(DFT)和局域密度近似(LDA)的第一性原理分析了氮掺杂(1120) ZnO 薄膜的磁性质.首先,研究了一个N原子掺杂ZnO薄膜的磁性质,结果表明N 2p,O 2p和Zn 3d 发生自发自旋极化.其次,研究了二个N原子掺杂ZnO薄膜的磁性质,9个不同几何结构的计算结果表明N原子之间具有FM耦合稳定性,而且具体分析了N掺杂ZnO铁磁稳定性的产生原因.最后,讨论了氮 关键词： 第一性原理 半导体 铁磁性     

Al表面的"类液"结构及其自扩散通道

应用分子动力学方法,采用嵌入势模型在熔点下和熔点上对Al(001),(110)和(111)表面的原子结构和自扩散现象进行研究.发现这些表面的第一层原子在低于熔点时,Al(110)面在700±10 K,Al(001)面在 860±10 K,Al(111)面在 930±10 K呈现明显自扩散且最终转变为"类液"结构,而其余各层仍保留有序状态.对这种"类液"结构进行均方位移、结构有序参数、径向分布函数和z向粒子密度分析,发现其结构和扩散行为与熔化的Al表面不同,并能在一定温度区间稳定存在.在"类液 关键词： 表面结构 分子动力学 自扩散     

Adsorption behavior of iron phthalocyanine on a Ag（110） surface

An investigation on the growth behavior of FePc on a Ag(110) surface is carried out by using scanning tunneling microscopy(STM).At an FePc coverage of 3.5 ML,an ordered superstructure(densely packed) with a lateral shift is observed.The densely packed superstructure can be attributed to the substrate commensuration and the intermolecular van der Waals attractive interaction.The in-plane lateral shift in the superphase is specifically along the direction of [10] azimuth.The results provide a new perspective to understanding the intermolecular and the molecule-substrate interactions.     

On the constituent counting rule for hard exclusive processes involving multi-quark states

At high energy,the cross section at finite scattering angle of a hard exclusive process falls off as a power of the Manderstam variable s.If all involved quark-gluon compositions undergo hard momentum transfers,the fall-off scaling is determined by the underlying valence structures of the initial and final hadrons,known as the constituent counting rule.In spite of the complication due to helicity conservation,it has been argued that when applied to exclusive process with exotic multiquark states,the counting rule is a powerful way to determine the valence degrees of freedom inside hadron exotics.In this work,we demonstrate that for hadrons with hidden flavors,the naive application of the constituent counting rule is problematic,since it is not mandatory for all components to participate in hard scattering at the scale s1/2.We illustrate the problems in the viewpoint based on effective field theory.We clarify the misleading results that may be obtained from the constituent counting rule in exclusive processes with exotic candidates such as Z_c~±(cd/cu),Z_b~±(bd/bdu),X(3872),etc.     

Atomistic simulation of fccben bcc phase transition in single crystal Al under uniform compression

By molecular dynamics simulations employing an embedded atom model potential, we investigate the fcc-to-bcc phase transition in single crystal Al, caused by uniform compression. Results show that the fcc structure is unstable when the pressure is over 250 GPa, in reasonable agreement with the calculated value through the density functional theory. The morphology evolution of the structural transition and the corresponding transition mechanism are analysed in detail. The bcc (011) planes are transited from the fcc (111) plane and the (111) plane. We suggest that the transition mechanism consists mainly of compression, shear, slid and rotation of the lattice. In addition, our radial distribution function analysis explicitly indicates the phase transition of Al from fcc phase to bcc structure.     

D* D1 and D D'*(2600) interactions and the charged charmonium-like state Z(4430)

The D^*D₁(2420) and DD'^*(2600) interactions are studied in a one-boson-exchange model. Isovector bound state solutions with spin parity J^P=1⁺ are found from the D^*D₁(2420) interaction, which may be related to the observed charged charmonium-like state Z(4430). There is no bound state solution found from the DD'^*(2600) interaction.     

第一性原理研究hcp-C3碳体环材料的力学性质

为探索新型高强度材料, 使用第一性原理方法研究了hcp-C3碳体环材料的晶体结构、电子性质与力学性质. 结构计算与电子性质分析表明, 基于特殊的分子结构, 碳体环结构中出现了变形的sp³杂化形式. 这使得hcp-C3碳体环结构中力学特性具有明显的方向依赖性. 力学性质计算表明, 沿着[0001]晶向, 碳体环结构的弹性模量达到1033 GPa, 抗拉强度达到124.17 GPa, 抗压强度达到381.83 GPa, 沿[2110]晶向的抗压强度达到了458.34 GPa, 从而显示了hcp-C3碳体环材料优秀的力学性质. hcp-C3碳体环材料可作为新型的高强度材料而使用.     

Structural and optical investigation of nonpolar α-plane GaN grown by metalben organic chemical vapour deposition on r-plane sapphire by neutron irradiation

Nonpolar (1120) α-plane GaN films are grown by metal-organic chemical vapour deposition (MOCVD) on r-plane (1102) sapphire. The samples are irradiated with neutrons under a dose of 1 × 10¹⁵ cm^-2. The surface morphology, the crystal defects and the optical properties of the samples before and after irradiation are analysed using atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD) and photoluminescence (PL). The AFM result shows deteriorated sample surface after the irradiation. Careful fitting of the XRD rocking curve is carried out to obtain the Lorentzian weight fraction. Broadening due to Lorentzian type is more obvious in the as-grown sample compared with that of the irradiated sample, indicating that more point defects appear in the irradiated sample. The variations of line width and intensity of the PL band edge emission peak are consistent with the XRD results. The activation energy decreases from 82.5 meV to 29.9 meV after irradiation by neutron.     

Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate

The anisotropic strain of a nonpolar (1120) a-plane GaN epilayer on an r-plane (1102) sapphire substrate, grown by low-pressure metal-organic vapour deposition is investigated by Raman spectroscopy. The room-temperature Raman scattering spectra of nonpolar a-plane GaN are measured in surface and edge backscattering geometries. The lattice is contracted in both the c- and the m-axis directions, and the stress in the m-axis direction is larger than that in the c-axis direction. On the surface of this sample, a number of cracks appear only along the m-axis, which is confirmed by the scanning electron micrograph. Atomic force microscopy images reveal a significant decrease in the root-mean-square roughness and the density of submicron pits after the stress relief.