In-situ TEM observation of the evolution of helium bubbles in Mo during He+ irradiation and post-irradiation annealing

The evolution of helium bubbles in purity Mo was investigated by in-situ transmission electron microscopy (TEM) during 30 keV He⁺ irradiation (at 673 K and 1173 K) and post-irradiation annealing (after 30 keV He⁺ irradiation with the fluence of 5.74×10¹⁶ He⁺/cm² at 673 K). Both He⁺ irradiation and subsequently annealing induced the initiation, aggregation, and growth of helium bubbles. Temperature had a significant effect on the initiation and evolution of helium bubbles. The higher the irradiation temperature was, the larger the bubble size at the same irradiation fluence would be. At 1173 K irradiation, helium bubbles nucleated and grew preferentially at grain boundaries and showed super large size, which would induce the formation of microcracks. At the same time, the geometry of helium bubbles changed from sphericity to polyhedron. The polyhedral bubbles preferred to grow in the shape bounded by {100} planes. After statistical analysis of the characteristic parameters of helium bubbles, the functions between the average size, number density of helium bubbles, swelling rate and irradiation damage were obtained. Meanwhile, an empirical formula for calculating the size of helium bubbles during the annealing was also provided.     

氦氢离子协同注入对锆膜形貌及物相结构的影响

 采用磁控溅射法制备了Zr-Mo膜，随后在低能静电加速器上分别采用剂量为2.80×10¹⁷~1.12 ×10¹⁸ions·cm^-2的He⁺、H⁺离子辐照Zr-Mo膜，利用光学透镜、扫描电镜、原子力显微镜和X射线衍射研究He⁺、H⁺离子协同注入效应对Zr-Mo膜微观结构的影响。实验结果表明：原始Zr-Mo膜表层晶粒清晰可见，尺寸约为200nm；辐照效应可导致Zr-Mo膜表层产生微观损伤区域，在注He⁺基础上注H⁺导致Zr-Mo膜出现更为严重的损伤现象；离子注入的表面溅射效应可使膜面晶粒边界逐渐刻蚀退让，导致膜面更加光滑、细致；He⁺、H⁺ 离子协同注入可使Zr-Mo膜晶格发生畸变，注入期间未使Zr-Mo膜发生吸H相变生成氢化物。     

Defects in H implanted GaAs studied by ion-beam and low-energy positron techniques

Ion-beam and low-energy positron-beam techniques have been used to study damage and implanted ion distributions and their annealing behavior in semi-insulating GaAs after the room temperature implantation of 3 × 10¹⁵−1 × 10¹⁷ 60 keV H⁺ cm^-2. The redistribution of the implanted H during annealing was observed to be connected to the migration of implantation-induced defect-complexes. A huge increase in the displaced atom concentration in the region of the H concentration was observed after annealings. A monovacancy overlayer, dissociation of H-vacancy complexes, and formation of stable vacancy-H agglomerates were observed in the different parts of the slowing-down region of the implanted H.     

Comparison between MeV Ni and He ion-implanted planar optical waveguides in quartz

Optically polished crystalline quartz samples were implanted at room temperature by 2.6 MeV Ni⁺ ions with a dose of 9×10¹⁴ ions/cm² and 2.0 MeV He⁺ ions with a dose of 1.5×10¹⁶ ions/cm², respectively. A comparison of the MeV Ni⁺ ion-implanted planar waveguide formation was made with the MeV He⁺ ion-implanted one. The prism-coupling method was carried out to measure the dark modes in the quartz waveguides by using model 2010 prism coupler. Five modes were observed in the Ni⁺ implanted waveguide while 15 modes were found in the He⁺ ion-implanted one. Reflectivity calculation method was applied to fitting the refractive index profile. TRIM’98 (transport of ions in matter) code was used to simulate the damage profile in quartz by MeV Ni⁺ and He⁺ ions implantation, respectively. It is found that the refractive index profile in MeV Ni⁺ ions implanted waveguide is somewhat different in shape from that in MeV He⁺ ions implanted waveguide.     

调幅W(Mo)/Cu纳米多层膜He+离子辐照响应行为

用磁控溅射技术制备不同调幅波长 (L) 的W(Mo)/Cu纳米多层膜,所制膜系在60 keV氦离子 (He⁺) 辐照条件下注入不同剂量: 0, 1×10¹⁷ He⁺/cm², 5×10¹⁷ He⁺/cm². 用X射线衍射仪 (XRD) 和高分辨透射电子显微镜(TEM)表征W(Mo)/Cu纳米多层膜辐照前后微观结构. 研究结果表明: 1) He⁺离子轰击引起温升效应是导致沉积态亚稳相β-W 转变成稳态 α-W相的主因, 而与调幅波长无明确关联; 2) 纳米多层结构中W(Mo) 和Cu膜显现出的辐照耐受性与调幅波长相关, 调幅波长越小, 抗He⁺的辐照性能越强; 3) 在5×10¹⁷ He⁺/cm²注入条件下, 观察到He团簇/泡在纳米结构W(Mo) 和Cu膜中的积聚行为存在明显差异: 在W (Mo) 膜中He团簇/泡的分布与晶粒取向相关, He团簇/泡倾向于沿W (211) 晶面分布; 而Cu膜非晶化且He团簇/泡在其体内呈均匀分布. 关键词： W(Mo)/Cu纳米多层膜 +辐照')" href="#">He⁺辐照 He团簇/泡 相转变     

Photoluminescence study of proton-implanted InP1−xAsx:Yb

Photoluminescence (PL) studies of low-energy (60 keV, H⁺₂), proton-implanted InP_1-xAs_x (0 x 17) crystals doped with Yb are reported. In the implanted samples we observed remarkable intensity reduction of all the PL lines. After annealing, the PL spectra did not recover to their preirradiation values indicating high thermal stability of the generated damage. We have not seen any influence of hydrogen or lattice defects on the shape of the Yb intra-4f-shell luminescence. We show that hydogen-implantation-induced defects stabilize surfaces of InP and InPAs compounds, preventing their decomposition during capless thermal annealing up to 650°C. It is suggested that this enhanced surface stabilization is due to the presence of defects saturated with hydrogen atoms which are bound tightly to the phosphorus atoms.     

VIOLET LIGHT-EMISSION FROM Ge+-IMPLANTED SiO2 FILMS ON Si SUBSTRATE

Germanium ions were implanted into SiO₂ films which were thermally grown on crystalline Si at an energy of 60 keV and with doses of 1×10¹⁵ and 1×10¹⁶ cm^-2.Under an ultraviolet excitation of ～5.0 eV,the implanted f ilms annealed at various temperatures exhibit intense violet luminescence with a peak at 396 nm.It is ascribed to the T₁→S₀ transition in GeO,which was formed during implantation and annealing process.     

Surface defects,stress evolution,and laser damage enhancement mechanism of fused silica under oxygen-enriched condition

Oxygen ions (O⁺) were implanted into fused silica at a fixed fluence of 1×10¹⁷ ions/cm² with different ion energies ranging from 10 keV to 60 keV. The surface roughness, optical properties, mechanical properties and laser damage performance of fused silica were investigated to understand the effect of oxygen ion implantation on laser damage resistance of fused silica. The ion implantation accompanied with sputtering effect can passivate the sub-/surface defects to reduce the surface roughness and improve the surface quality slightly. The implanted oxygen ions can combine with the structural defects (ODCs and E' centers) to reduce the defect densities and compensate the loss of oxygen in fused silica surface under laser irradiation. Furthermore, oxygen ion implantation can reduce the Si-O-Si bond angle and densify the surface structure, thus introducing compressive stress in the surface to strengthen the surface of fused silica. Therefore, the laser induced damage threshold of fused silica increases and the damage growth coefficient decreases when ion energy up to 30 keV. However, at higher ion energy, the sputtering effect is weakened and implantation becomes dominant, which leads to the surface roughness increase slightly. In addition, excessive energy aggravates the breaking of Si-O bonds. At the same time, the density of structural defects increases and the compressive stress decreases. These will degrade the laser laser-damage resistance of fused silica. The results indicate that oxygen ion implantation with appropriate ion energy is helpful to improve the damage resistance capability of fused silica components.     

Nd L-shell x-ray emission induced by light ions

The L-shell x-ray of Nd has been obtained for 300-600 keV He²⁺ ions impacting, and compared with that produced by H⁺ and H₂⁺ ions. The threshold of projectile kinetic energy for L-shell ionization of Nd is crudely verified in the energy region of about 300-400 keV. It is found that the energy of the distinct L-subshell x-rays has a blue shift. The relative intensity ratios of Lβ_{1, 3, 4} and Lβ_{2, 15} to Lα_{1, 2} x-ray are enlarged compared to the atomic data, and they decrease with the increase of the incident energy, and increase with increasing the effective nuclear charge of the incident ions. That is interpreted by the multiple ionization of outer-shells induced by light ions.     

100keV质子与低高能质子在绝缘微孔中输运特性的对比分析

为研究中能区带电粒子在绝缘微孔中传输的物理图像,利用MATLAB程序和蒙特卡罗方法建立理论模型,得到入射能量为10 keV,100 keV和1 MeV的质子,以-1?倾斜角入射到微孔后,出射粒子角分布、沉积电荷斑分布,以及粒子在微孔内的运动轨迹等传输特性.研究结果表明,在10 keV的低能区,微孔内壁沉积电荷的导向效应是主要的传输机制.在1 MeV的高能区,进入表面以下多次随机非弹性碰撞是主要的输运机制.在100 keV的中能区,无电荷斑时,主要是以进入表面以下的随机二体碰撞为传输机制;在电荷斑累积过程中,增强的库仑排斥力逐渐抑制入射质子在微孔内壁表面发生电子俘获;当达到充放电平衡后,主要传输机制为电荷斑辅助的近表面镜面散射行为.这一特性加深了对中能区质子在微孔中输运行为的认识,有助于对百keV质子微束的控制和应用.     

30 keV He~(2+)在不同倾斜角度的聚碳酸酯微孔膜中的传输过程

本文测量了30 keV的He~(2+)入射倾斜角度分别为-0.5~?,-1~?,-1.5~?和-2.5~?的聚碳酸酯纳米微孔膜后,出射粒子角度分布、电荷态分布以及相对穿透率随时间的演化.当微孔膜倾斜角度在-0.5~?,-1~?和-1.5~?时,出射的He~(2+)离子始终保持在入射束流方向,出射的He~0原子出射方向由微孔孔道方向逐渐转移到入射束流方向,在实验过程中观测到明显的电荷交换,这一现象与之前发现的导向效应不同,微孔内部沉积的电荷斑和微孔内表面原子的短程集体散射作用,克服入射离子的横向动量,使入射离子在微孔内表面以上以类似镜面掠射的方式出射,并发生时间演化效应,主要传输机制为电荷斑辅助的表面以上的类似镜面掠射行为.而当倾斜角度在-2.5~?时,出射的He~(2+)离子始终保持在入射束流方向,出射的He~0原子始终保持在微孔孔道方向,沉积的电荷斑很难克服入射离子的横向动量,没有时间演化效应,主要传输机制为微孔内表面以下的多次随机非弹性碰撞过程.这一物理图像使中能离子入射不同倾斜角度的微孔膜物理认识更加深入和完整.     

Planar waveguides in neodymium-doped calcium niobium gallium garnet crystals produced by proton implantation

In this work, the fabrication and optical properties of a planar waveguide in a neodymium-doped calcium niobium gallium garnet(Nd:CNGG) crystal are reported. The waveguide is produced by proton(H~+) implantation at 480 ke V and a fluence of 1.0×10~(17) ions/cm~2. The prism-coupling measurement is performed to obtain the dark mode of the waveguide at a wavelength of 632.8nm. The reflectivity calculation method(RCM) is used to reconstruct the refractive index profile. The finite-difference beam propagation method(FD-BPM) is employed to calculate the guided mode profile of the waveguide.The stopping and range of ions in matter 2010(SRIM 2010) code is used to simulate the damage profile induced by the ion implantation. The experimental and theoretical results indicate that the waveguide can confine the light propagation.     

Ti~+离子注入结合热退火法制备TiO_2纳米薄膜研究

利用金属蒸发真空多弧离子源(MEVVA源)注入机将Ti+离子注入到高纯石英玻璃衬底中,离子注入的加速电压为20 k V,注入剂量为1.5×1017和3×1017ions/cm2,将注入样品在氧气气氛下进行热退火处理,制备了TiO2纳米薄膜。采用光吸收谱、拉曼光谱、X射线光电子能谱、扫描电子显微镜和透射电子显微镜对注入样品进行了测试和表征,分析了TiO2薄膜的形成机理。在热退火过程中衬底中离子注入的Ti原子向外扩散到衬底表面被氧化形成了TiO2。TiO2的形成、晶粒尺寸和晶体结构依赖于热退火温度,而形成TiO2薄膜的厚度主要受离子注入剂量和热退火时间的影响。实验结果表明,该方法制备的TiO2纳米薄膜将有望应用于制备具有光催化、自清洁等特殊性能的自清洁玻璃。     

中能高浓度氦离子注入对钨微观结构的影响

采用15 keV, 剂量1×10¹⁷/cm², 温度为600 ℃氦离子注入钨, 分别以块体钨研究氦离子对钨的表面损伤; 以超薄的钨透射电镜样品直接注入氦离子, 研究该条件下钨的微观结构变化, 以了解氦离子与钨的相互作用过程; 采用扫描电子显微镜、聚焦离子束扫描显微镜、透射电子显微镜、高分辨透射电子显微镜等分析手段研究氦离子注入对钨表面显微结构的影响及氦泡在钨微观结构演化中的作用.     

FORMATION OF A BURIED LAYER OF ALUMINIUM NITRIDE BY HIGH DOSE N2+ IMPLANTATION INTO ALUMINIUM

Aluminium films with various thickness between 700 nm and 1μm were deposited on Si (100) substrates, and 400 keV N₂⁺ ions with doses ranging from 4.3×10¹⁷ to 1.8×10¹⁸ N/cm² were implanted into the alu-minium films on silicon, Rutherford Backscattering (RBS) and channeling, secondary ion mass spectroscopy (SIMS), Fourier transform infrared spectra (FTIR), X-ray diffraction (XRD), transmission electron microscopy (TEM) and spreading resistance probes (SRP) were used to characterize the synthesized aluminium nitride. The experiments showed that when the implantation dose was higher than a critical dose N_c, a buried stoichiometric AlN layer with high resistance was formed, while no apparent AlN XRD peaks in the as-implanted samples were observed; however, there was a strong AlN(100) diffraction peak appearing after annealing at 500 ℃ for 1h. The computer program, Implantation of Reactive Ions into Silicon (IRIS), has been modified and used to simulate the formation of the buried AlN layer as N₂⁺ is implanted into aluminium. We find a good agreement between experimental measurements and IRIS simulation.     

氦、氘对纯铁辐照缺陷的影响

在核聚变堆的辐照环境中, 核嬗变产物氢、氦对结构材料的抗辐照性能将产生很大的影响. 本实验采用离子注入和电子辐照模拟研究了氦和氘对具有体心立方结构的纯铁的影响. 采用离子加速器在室温分别对纯铁注入氦离子和氘离子, 经500℃时效1 h后在高压电镜下进行电子辐照.结果表明: 室温注氦和室温注氘的纯铁在500℃时效后分别形成间隙型位错环和空位型位错环. 在电子辐照下, 间隙型位错环吸收间隙原子而不断长大, 而空位型位错环吸收间隙原子不断缩小. 通过计算位错环的变化速率发现, 空位型位错环比间隙型位错环吸收了更多的间隙原子, 即室温注氘纯铁的位错偏压比室温注氦纯铁的偏压参量大, 这意味着相同实验条件下空位型位错环对辐照肿胀的贡献大于间隙型位错环对辐照肿胀的贡献. 利用氦-空位复合体和氘-空位复合体的结构, 分析了注氦和注氘后在纯铁中形成不同类型位错环的原因. 关键词： 氦 氘 辐照损伤 位错环     

Hydrogen isotopic replacement and microstructure evolution in zirconium deuteride implanted by 150 keV protons

Zirconium tritiated(ZrT_x) is an alternative target material for deuteron–triton(D-T) reaction neutron generator. The isotopic replacement and microstructure evolution induced by hydrogen isotope implantation could significantly affect the performance of the target film. In this work, the zirconium deuteride film deposited on Mo/Si substrate was implanted by 150 ke V protons with fluence from 1×10~(16) to 1×10~(18) protons/cm~2. After implantation, the depth profiles of retained hydrogen(H) and deuterium(D) in these target films were analyzed by elastic recoil detection analysis(ERDA), and time of flight-secondary ion mass spectrometry(To F-SIMS). Additionally, the microstructure evolution was also observed by x-ray diffraction(XRD) and scanning electron microscope(SEM). The D concentration in the Zr Dx film decreased versus the proton implantation fluence. An analytical model was proposed to describe the hydrogen isotopic trapping and exchange as functions of incident protons fluence. Additionally, the XRD analysis revealed that no new phase was formed after proton implantation. Furthermore, circular flakings were observed on the ZrD_x surface from SEM images at fluence up to 1×10~(18) protons/cm~2, and this surface morphology was considered to associate with the hydrogen atoms congregation in Mo/Si boundary.     

Refractive index profiles of ion implanted waveguides in thulium sodium yttrium tungstate

Planar waveguides were first formed in thulium sodium yttrium tungstate (Tm:NaY(WO₄)₂) crystals by the implantation of MeV He, P and Ni ions with certain doses at room temperature, respectively. The refractive index profiles of the three ion implanted waveguides were found different to some extent. The present data show that He⁺ ion implanted waveguides in Tm:NaY(WO₄)₂ should be the typical barrier type one, while a combination of radiation damage and radiation enhanced diffusion may be responsible for the refractive index profiles of the MeV Ni⁺ and P⁺ ion implanted waveguides in Tm:NaY(WO₄)₂.     

表面粗糙度对面向等离子体钨材料溅射的影响

依据钨材料表面溅射的实验现象,建立钨材料表面粗糙模型,模拟了高能H⁺、He⁺粒子辐照下的钨材料表面的溅射行为过程,并与基于离子输运的双群模型计算得到的结果作了比较。结果表明,随着钨材料表面粗糙程度的增加,溅射率降低;对一定的粗糙表面,相同能量的不同入射粒子,质量越大粒子溅射率越高,这些结果为分析聚变装置中心等离子体杂质水平和评价偏滤器寿命等提供了一定的理论支撑。     

Optical properties of He+-implanted and diamond blade-diced terbium gallium garnet crystal planar and ridge waveguides

Terbium gallium garnet (Tb₃Ga₅O₁₂, TGG) crystal can be used to fabricate various magneto-optical devices due to its optimal Faraday effect. In this work, 400-keV He⁺ ions with a fluence of 6.0×10¹⁶ ions/cm² are irradiated into the TGG crystal for the planar waveguide formation. The precise diamond blade dicing with a rotation speed of 2×10⁴ rpm and a cutting velocity of 0.1 mm/s is performed on the He⁺-implanted TGG planar waveguide for the ridge structure. The dark-mode spectrum of the He⁺-implanted TGG planar waveguide is measured by the prism-coupling method, thereby obtaining the relationship between the reflected light intensity and the effective refractive index. The refractive index profile of the planar waveguide is reconstructed by the reflectivity calculation method. The near-field light intensity distribution of the planar waveguide and the ridge waveguide are recorded by the end-face coupling method. The He⁺-implanted and diamond blade-diced TGG crystal planar and ridge waveguides are promising candidates for integrated magneto-optical devices.