微通道板碘化铯膜层抗潮解超薄保护膜层北大核心CSCD

碘化铯膜层对紫外光以及X射线具有很高的光电转换效率,但在空气中容易发生潮解。介绍了微通道板碘化铯膜层抗潮解超薄保护膜层的制备与保护效果。使用扫描式电子显微镜(scanning electron microscope,SEM)对碘化铯薄膜光阴极微通道板的镀膜深度和厚度进行测试,采用氧化铝作为碘化铯薄膜光阴极的保护膜层,并分别制备了厚度为2 nm、5 nm和10 nm的氧化铝保护膜层。在空气中存放不同时间后,碘化铯薄膜光阴极微通道板表面未发生明显潮解变化,其增益约为8800,暗计数率约为4.1 counts·s^(−1)·cm^(−2)。试验证明,氧化铝能够作为微通道板碘化铯膜层抗潮解超薄保护膜层。     

KBaPO4:Eu3+红色发光材料的光谱特性

采用高温固相法制备了KBaPO4:Eu3+红色发光材料,研究了Eu3+掺杂浓度、电荷补偿剂等对材料发光性质的影响,并利用X射线衍射及光谱等技术对材料的性能进行了表征.研究结果显示:在400 nm近紫外光激发下,材料呈多峰发射,分别由Eu3+的5D0→7FJ(J=0,1,2,3,4)能级跃迁产生,主峰位于621 nm;监...     

原电池法室温制备Ba_(1-x)Ca_xMoO_4固溶体薄膜

在含Ca_~(2+)和Ba~(2+)的碱性溶液中,通过原电池法在室温条件下制备了Ba_(1-x)Ca_xMoO_4多晶固溶体薄膜。通过X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)和荧光分析(FA)对所制备的薄膜进行了分析表征,研究了Ba摩尔分数对薄膜的晶相结构、表面形貌和发光性能的影响。结果表明,原电池法制备的Ba_(1-x)Ca_xMoO_4薄膜致密、均匀、结晶完好,为四方相结构。随着初始溶液中Ba含量的增加,所得Ba_(1-x)Ca_xMoO_4固溶体薄膜的形貌逐渐从CaMoO_4微晶的球形转变为BaMoO_4微晶的四方锥形。在290nm紫外光的激发下,制备的薄膜均在350nm和495nm附近呈现两个宽的发射带,其中495nm的蓝光发射明显强于350nm的紫光发射。初始溶液中的Ba/Ca的量比对所制备的Ba_(1-x)Ca_xMoO_4固溶体薄膜的发射光谱的形状和发射波长影响甚微,但对其发射强度有明显影响。     

磁控溅射制备的AlN薄膜的结构、组分及性能分析

采用DC磁控溅射法,分别在p-Si(111)和玻璃基片上沉积AlN薄膜。利用X射线衍射(XRD)、X射线能谱仪(EDS)、原子力显微镜(AFM)、台阶仪\紫外/可见分光光度计和傅里叶变换红外光谱仪(FTIR)分析了薄膜的结构组分、表面形貌、膜厚、光学性能和红外吸收特性。结果表明:溅射电流对AlN薄膜的生成有很大的影响,当电流增加到0.40A时,薄膜中出现明显的h-AlN(100)和AlN(110)衍射峰;样品的最大高度都小于30nm;样品在250-1000nm波长范围内具有较高的透射率,当溅射电流为0.4A时,薄膜的禁带宽度约为5.94eV;在677.12cm-1处出现强烈的吸收峰。     

溅射功率对多层膜质量的影响

用磁控溅射技术制备薄膜，用X射线衍射研究在基片和靶间距离固定的情况下不同的溅射功率对薄膜结构的影响。结果表明：过低的溅射功率下淀积的薄膜有畸变的X射线衍射特征峰，特征峰强度小，半峰全宽大。而比较高溅射功率得到的薄膜有比较尖锐的X射线衍射特征峰，强度高和半峰全宽非常窄。研究表明，X射线衍射特征峰强度小和半峰全宽大的薄膜结构疏松，而强度高和半峰全宽非常窄的薄膜结构致密。     

KBaPO4∶Eu3+红色发光材料的光谱特性

采用高温固相法制备了KBaPO4:Eu3+红色发光材料,研究了Eu3+掺杂浓度、电荷补偿剂等对材料发光性质的影响,并利用X射线衍射及光谱等技术对材料的性能进行了表征.研究结果显示:在400 nm近紫外光激发下,材料呈多峰发射,分别由Eu3+的5D0→7FJ(J=0,1,2,3,4)能级跃迁产生,主峰位于621 nm|监测621 nm发射峰,所得激发光谱由O2-→Eu3+电荷迁移带(200~350 nm)和f-f高能级跃迁吸收带(350~450 nm)组成,主峰位于400 nm|改变Eu3+掺杂浓度,KBaPO4∶Eu3+材料的发射强度随之改变,Eu3+浓度为5 mol%时,强度最大|依据Dexter理论,得知引起浓度猝灭的原因为电偶极-电偶极相互作用|添加电荷补偿剂,可增强KBaPO4∶Eu3+材料的发射强度,其中以添加Li+,Cl-时,材料发射强度提高最明显.     

白光LED用红色荧光粉CaSnO3:Eu3+的制备及光学性质

采用水热法制备了CaSnO3:Eu3+红色荧光粉,利用X射线粉末衍射、场发射扫描电镜和荧光光谱对CaSnO3:Eu3+粉末进行了表征.实验结果表明,这种新型的荧光粉可以被紫外光280 nm、近紫外光395 nm和蓝光465nm有效地激发,发射主峰位于614nm.光谱分析结果表明,Eu3+离子在晶体结构中占据了非反演对称...     

ZnSe/SiO2复合薄膜光学常数与荧光光谱的研究

采用溶胶-凝胶工艺与原位生长技术,制备了ZnSe/SiO2复合薄膜.X射线衍射分析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1:1.01-1:1.19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌,结果表明复合薄膜表面既存在尺寸约为400nm的ZnSe晶粒,也存在尺寸小于100nm的ZnSe晶粒.利用椭偏仪测量了薄膜椭偏角Ψ,Δ与波长λ的关系,采用Maxwell-Garnett有效介质理论对薄膜的光学常数、厚度、气孔率、ZnSe的浓度进行了数据拟合.利用荧光光谱分析了薄膜的光致发光,结果表明在波长为395nm的激发光下,487nm的发射峰对应着闪锌矿型ZnSe的带边发射,同时也观测到薄膜中ZnSe晶体增强的自由激子发射及伴随着ZnSe晶体缺陷而产生的辐射发光.     

Sr_3Gd(PO_4)_3∶Tm~(3 )的真空紫外光谱特性

研究了Sr3Gd(PO4)3∶Tm3 和GdPO4∶Tm3 样品的结构特性、光谱特性。GdPO4∶Tm3 为单斜晶系,基质掺入铥离子后结构没有明显变化。GdPO4∶Tm3 在164和210nm附近有强烈的吸收峰。位于164nm附近的强烈的吸收峰是归因于基质的吸收引起,210nm附近的吸收峰则归因于Gd3 的8S7/2—6GJ的能级跃迁。在164nm真空紫外光激发下,样品于453及363nm处有较强的发射峰,发射主峰位于453nm,属于Tm3 的1D2→3H4(22,123cm-1)跃迁的典型发射。由于阳离子质量的不同,Sr3Gd(PO4)3∶Tm3 在166nm附近的激发峰高于GdPO4∶Tm3 的同位置的激发峰,其在363nm处的发射有明显减弱,而在453nm处的蓝色发射有显著的增强。     

Sr3Gd(PO4)3:Tm3+的真空紫外光谱特性

研究了Sr3Gd(PO4)3 : Tm3 和GdPO4 : Tm3 样品的结构特性、光谱特性.GdPO4 : Tm3 为单斜晶系,基质掺入铥离子后结构没有明显变化.GdPO4:Tm3 在164和210 nm附近有强烈的吸收峰.位于164 nm附近的强烈的吸收峰是归因于基质的吸收引起,210 nm附近的吸收峰则归因于Gd 的8S7/2-6GJ的能级跃迁.在164 nm真空紫外光激发下,样品于453及363 nm处有较强的发射峰,发射主峰位于453nm,属于Tm3 的1D2→3H4(22,123 cm-1)跃迁的典型发射.由于阳离子质量的不同,Sr3Gd(PO4)3:Tm3 在166 nm附近的激发峰高于GdPO4: Tm3 的同位置的激发峰,其在363 nm处的发射有明显减弱,而在453 nm处的蓝色发射有显著的增强.     

等离子体增强化学气相沉积法制备含氢类金刚石膜的紫外Raman光谱和X射线光电子能谱研究

利用脉冲辉光放电的方法,在硅片上采用不同的沉积工艺制备了含氢类金刚石膜层,并采用Raman光谱和X射线光电子能谱(XPS)对膜层进行表征.用Raman光谱仪在波长为325 nm的紫外光源的激励下观察膜层的键结构.紫外Raman光谱对含氢类金刚石膜是非常有用的,它能有效避免可见光Raman光谱测量时的荧光干扰,清晰地得到膜层的D峰和G峰.同时利用XPS分析得到膜层的sp3键含量,并与Raman光谱所得数据进行比较.通过Raman光谱和XPS分析可以发现,在紫外光源的激励下,膜层的G峰峰位向高频移方向移动,G峰峰位、I(D)/I(G),G峰半高宽和sp3键含量之间存在一定的关系.     

ZnO薄膜表面和边缘的发光特性

研究了分子束外延方法生长的ZnO薄膜的光学特性,首先测量样品反射光谱,然后重点研究其光致发光光谱。实验中通过改变激发光的强度,以及采用波导配置和不同的实验几何配置等手段,观察到了ZnO薄膜中起源于激子-激子散射和电子-空穴等离子体复合发光的受激辐射,同时观察到两种配置下自发辐射谱中存在巨大的差异。通过对实验数据和理论计算结果的分析,初步认为造成了从ZnO薄膜表面和侧面得到的PL谱之间的显著区别原因有两种:一是非对称薄膜波导的吸收损耗造成的波长选择效应,二是薄膜波导对掠出射光的类似薄膜微腔的微腔效应。     

基于AAO的CuCl2纳米花瓣状薄膜的发光特性研究

利用直接沉积法在多孔阳极氧化铝（AAO）材料表面沉积CuCl22H2O水溶液制备纳米花状薄膜,并利用场发射扫描电镜对其形貌进行表征,结合X射线光电子能谱等技术鉴定其成分,结果表明纳米花状薄膜为CuCl2。在室温条件下,测量了样品的光致发光光谱特性,观察到表面有纳米花状CuCl2薄膜的AAO,其激发中心在290 nm,发射中心在415 nm,与基底AAO位置完全相同,但发光强度从127 cd提高到183 cd;对比宏观CuCl2粉末、AAO薄膜的激发和发射光谱,分析认为生长有纳米花状CuCl2的AAO薄膜发光强度提高的原因是该层表面的纳米结构形貌。     

Luminescence mechanism of ZnO thin film investigated by XPS measurement

The effects of annealing environment on the luminescence characteristics of ZnO thin films that were deposited on SiO₂/Si substrates by reactive RF magnetron sputtering were investigated by X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL). An analysis of the O 1s peak of ZnO film revealed that the concentration of oxygen vacancies increased with the annealing temperature from 600 °C to 900 °C under an ambient atmosphere. The PL results demonstrated that the intensity of green light emission at 523 nm also increased with temperature. Under various annealing atmospheres, the analyses of PL indicated that only one emission peak (523 nm) was obtained, indicating that only one class of defect was responsible for the green luminescence. The green light emission was strongest and the concentration of oxygen vacancies was highest when the ZnO film was annealed in ambient atmosphere at 900 °C. The results in this investigation show that the luminescence mechanism of the emission of green light from a ZnO thin film is associated primarily with oxygen vacancies. PACS 81.15.Cd; 81.40.Ef; 78.55.-m; 78.55.Et     

The effect of argon gas pressure on structural,morphological and photoluminescence properties of pulsed laser deposited KY<Subscript>3</Subscript>F<Subscript>10</Subscript>:Ho<Superscript>3+</Superscript> thin films

KY₃F₁₀:Ho³⁺ thin films were deposited by a pulsed laser deposition technique with Nd–YAG laser radiation (λ = 266 nm) on (100) silicon substrate. The XRD and FE-SEM results show improved crystalline structure for the film deposited at a pressure of 1 Torr. The AFM results show that the RMS roughness of the films increases with rise in argon gas pressure. The EDS elemental mapping shows Y-excess for all the films deposited under all pressures, and this is attributed to its higher mass and low volatility as compared to K and F. XPS analysis further confirmed Y-excess in the deposited films. Green PL emission at 540 nm was investigated at three main excitation wavelengths, namely 362, 416 and 454 nm. The PL emission peaks increase with rise in background argon gas pressure for all excitation wavelengths. The highest PL intensity occurred at excitation of 454 nm for all the thin films. In addition, faint red (near infrared) emission was observed at 750 nm for all the excitations. The green emission at 540 nm is ascribed to the ⁵F₄–⁵I₈ and ⁵S₂–⁵I₈ transitions, and the faint red emission at 750 nm is due to the ⁵F₄–⁵I₇ and ⁵S₂–⁵I₇ transitions of Ho³⁺.     

Structure and luminescence of CsI:Eu columnar films

Europium doped columnar films of CsI are produced by vacuum condensation. Eu²⁺ ions in the CsI:Eu films lead to the formation of a narrow (0.18 eV), intense luminescence band with a maximum at 456 nm, which is excited by x-rays, as well as by photons of various energies. The spectral and kinetic characteristics of the emission depend on the amount of activator and on the conditions under which the film is prepared and stored. The nature of the luminescence centers is determined by structural formations that contain divalent europium ions.     

基于微孔硅阵列的像素化γ-CuI闪烁转换屏的研制及性能表征

以微孔硅阵列为模板,高纯CuI粉末为原料,采用压力注入法,成功制备了具有单分散微柱结构的像素化CuI闪烁转换屏。扫描电子显微镜(SEM)与X射线衍射(XRD)的测试结果表明,所制备的转换屏中CuI微柱连续、致密,微柱柱径约为2.5μm、间隔约为1.5μm、柱长约为80μm,并具有良好的γ相晶体结构。在X射线激发下,所制备的像素化γ-CuI闪烁转换屏具有峰值波长位于680nm附近的红光慢发射带;掺碘后,该发射带被较大幅度的抑制,同时出现了峰值波长位于432nm的快发光峰;当碘掺杂含量达到10Wt%时,峰值波长位于680nm附近的红光慢发射带被完全抑制,只存在峰值波长位于432nm的快发光峰。采用刃边法测量了所制备的像素化γ-CuI闪烁屏的空间分辨率,结果显示其分辨率可达38lp·mm-1,表明该闪烁屏除拥有超快时间响应特性外,兼具很高的空间分辨本领,在X射线成像方面具有独特的应用价值。     

Cold white light generation through the simultaneous emission from Ce3+, Dy3+ and Mn2+ in 90Al2O3·2CeCl3·3DyCl3·5MnCl2 thin film

The photoluminescence of a CeCl₃, DyCl₃ and MnCl₂ doped aluminum oxide film deposited by ultrasonic spray pyrolysis was characterized by excitation, emission and decay time spectroscopy. A nonradiative energy transfer from Ce³⁺ to Dy³⁺ and Mn²⁺ is observed upon UV excitation at 278 nm (peak emission wavelength of AlGaN-based LEDs). Such energy transfer leads to a simultaneous emission of these ions in the blue, green, yellow and red regions, resulting in white light emission with CIE1931 chromaticity coordinates, x=0.34 and y=0.23, which correspond to cold white light with a color temperature of 4900 K.     

Er3+掺杂新型GeS2-In2S3-CsI玻璃上转换光谱性质研究

用熔融淬冷法制备了掺Er³⁺的80GeS₂-10In2S₃-10CsI(mol%)硫卤玻璃样品,测试了样品的热学稳定性、喇曼光谱、吸收光谱以及上转换光谱,分析了Er³⁺离子在该玻璃中的上转换发光机理.应用Judd-Ofelt理论计算分析了Er3+离子在该样品中的强度参量Ωt(t=2,4,6)、自发辐射跃迁几率A、荧光分支比β以及辐射寿命τrad等光谱参量.在980 nm LD泵浦激发下,首次在该种玻璃中观察到强烈的绿光(526 nm、549 nm),分别对应于2H11/2→4I15/2和4S3/2→4I15/2的跃迁,其中549 nm处绿光较强.549 nm处上转换荧光寿命为0.34 ms,量子效率为69%.同时研究了绿光(526 nm、549 nm)上转换发光强度随泵浦激发功率的变化,其发光曲线拟合斜率分别为1.71和2.03,表明绿光是双光子吸收过程.研究结果表明：掺Er³⁺的80GeS₂-10In2S₃-10CsI硫卤玻璃是一种上转换绿光激光器的潜在基质材料.     

Control of emission peaks of X-ray phosphor using dye-silica nanoparticles

Simple method yielding new emission peaks to the X-ray phosphor and its mechanism were investigated using concentrated-dye-molecule-doped silica nanoparticles (dye-silica nanoparticles) and X-ray phosphors. The dye-silica nanoparticles were coated on the sheet of the X-ray phosphor using 20 wt% polyvinyl alcohol solution. The fluorescence of the dye-silica nanoparticle coated onto X-ray phosphor was successfully observed by X-ray irradiation. The fluorescent cascade from the X-ray-irradiated phosphor could be used in the excitation of the dye-silica nanoparticles by coating on the calcium tungstate (X-ray phosphor). The observed new fluorescence was based on the extent of the overlapping of wavelengths between the emission of the X-ray phosphor and the excitation of the dye-silica nanoparticles. The fluorescent peak of the calcium tungstate as the X-ray phosphor shifted from 434 to 425 nm. The dye-silica particle-calcium tungstate hybrid material showed new emission peaks from 543 to 601 nm due to the addition of fluorescein, rhodamine red-X, or cy5. The new emission peaks changed by the content of dye and the size of the silica nanoparticles. The fluorescence intensity ratio of the new fluorescence peaks at 543 nm against that of the X-ray phosphor depended on the fluorescent cascade from the X-ray-irradiated X-ray phosphor. It can closely match the overall emission of the phosphorous intensity screens to the sensitivity of the film allowing lower dose X-rays to obtain the same image clarity.