气相外延生长的ZnSe单晶薄膜及电致发光

用窄空间外延方法,在GaAs(100)衬底上外延生长了ZnSe(100)单晶薄膜.实验条件是,T衬=550℃,T源=650℃,H2-HCl气流速率为0.4-0.45l/min,生长速率为0.25-0.3μ/h.外延片在700℃的Zn和MnCl2蒸气中处理40-60分钟,以降低ZnSe的电阻率及掺入杂质Mn.利用这一外延层制作了MS结发光二极管,在反向偏压下获得黄色电致发光.     

ZnSe:Cu/CdS核壳量子点的合成及光学性能研究

以CdS为壳层材料对核水溶性ZnSe:Cu量子点进行包覆,得到ZnSe:Cu/CdS核壳结构的量子点。研究了壳层厚度对ZnSe:Cu量子点光学性能的影响,采用TEM、XRD、PL和UV-Vis手段对所得样品进行表征。实验结果表明:量子点为立方闪锌矿结构,分散性好,形状为球形,经壳层修饰后量子点的粒径由2.7 nm增大到4.0 nm。随着包覆CdS壳层数的增加,量子点的发射和紫外吸收谱红移,说明量子点在长大,证明CdS壳层生长在ZnSe:Cu量子点的表面,形成了核壳结构的ZnSe:Cu/CdS量子点。包覆CdS壳层后ZnSe:Cu量子点的发光强度减弱,但稳定性得到了提高。     

气相外延ZnSe单晶薄膜的蓝色电致发光

本文在300℃—700℃温度范围内,在GaAs衬底上气相外延生长了ZnSe单晶薄膜。讨论了衬底温度对外延层电学性质及光学特性的影响。ZnSe外延层经Zn气氛热处理后,发光特性大为改善。用处理后的ZnSe外延膜做成MIS发光二极管,首次得到了室温下气相外延ZnSe单晶薄膜的蓝色电致发光。     

衬底温度对热壁外延ZnSe薄膜质量的影响

用热壁外延法在不同衬底温度条件下生长一系列ZnSe薄膜,并通过X射线衍射、喇曼散射以及光致发光技术对ZnSe薄膜质量作了研究。实验结果表明,随着衬底温度下降,ZnSe薄膜质量逐渐变差;当衬底温度低于300℃时,(100)ZnSe薄膜中有(111)孪晶出现;但同时发现衬底温度大于375℃时,衬底Ga原子对ZnSe外延层扩散严重。     

基于紫外光辐照条件下制备ZnSe/ZnS核壳结构量子点

对传统的水相合成法进行改进,采用更加安全、简便、经济、环保的紫外光辐照方法在室温下合成了ZnSe/ZnS核壳结构量子点。调节pH值、光照时间、反应物配比等实验条件,优化了制备ZnSe/ZnS量子点核壳结构的最佳生长与修饰条件,使其具有良好色散、时间稳定性和发光特性。紫外线照射可以激发自由电子引发化学反应,研究使用了巯基乙酸(TGA)和谷胱甘肽(GSH)作为稳定剂和分散剂,用来控制ZnSe量子点的生长,得到分散均匀的ZnSe量子点。引入的光敏材料是形成ZnS的S源。利用X射线衍射(XRD)、电子显微镜(EM)、能量色散谱仪(EDX)、光致发光光谱(PL)和紫外可见光谱(UV-Vis)对量子点的晶体结构和光学性质进行了表征。结果表明, GSH修饰的ZnSe量子点相比于TGA修饰的ZnSe量子点呈现出更好的稳定性与较少的表面缺陷。ZnS的壳层生长能有效地弥补这一缺陷,但过厚的壳层会导致本征辐射的猝灭。该实验深入探索此类制备方法,并就各类影响因素和合成条件做出细致补充。实验结果结合理论分析得出ZnSe/ZnS核壳结构量子点的最佳合成条件。     

ZnSe pn二极管蓝绿色电致发光

用常压MOCVD方法制备了ZnSe pn结构.由电子束感生电流像表明pn结的存在;用发光和I-V等方法研究了二极管的特性;在77K正向偏压下观测到了以ZnCdSe-ZnSe量子阱为发光层的ZnSe pn二极管蓝绿色电致发光.     

CdSe/ZnSe/ZnS多壳层结构量子点的制备与表征

展示了一种简捷的多壳层量子点合成路线。在含有过量Se源的CdSe体系中直接注入Zn源,"一步法"合成了CdSe/ZnSe量子点;进一步以CdSe/ZnSe为"核",表面外延生长ZnS壳层制备了核/壳/壳结构CdSe/ZnSe/ZnS量子点。相对于以往报道的多壳层结构量子点的制备方法,该方法通过减少壳层的生长步骤有效地简化了实验操作,缩短了实验周期,同时减少对原料的损耗。对量子点进行高温退火处理,能够大幅提高CdSe/ZnSe/ZnS量子点的发光量子产率。透射电镜、XRD以及光谱研究表明:所制备的量子点接近球形,核与壳层纳米晶均为闪锌矿结构,最终获得的CdSe/ZnSe/ZnS量子点的光致发光量子产率达到53％。为了实现量子点的表面生物功能化,通过巯基酸进行了表面配体交换修饰,使量子点表面具有水溶性的羧基功能团,并且能够维持较高的光致发光量子产率。     

分子束外延ZnSe/GaAs材料的拉曼散射研究

用分子束外延(MBE)技术，在GaAa(100)衬底上生长了厚度从0．045μm到1．4μm的ZnSe薄膜。通过室温拉曼光谱的测量对ZnSe薄膜纵光学声子(Longitudinal-opticalphonon)的谱形进行了分析。用拉曼散射的空间相关模型定量分析了一级拉曼散射的型间相关长度与晶体质量之间的关系，结果表明ZnSe外延层的晶体质量随着外延层厚度的减薄是渐渐退化的，这是由于界面失配位错引入外延层所致，理论分析与实验结果相吻合。     

Zn1—xMgxSySe1—y四元半导体合金的拉曼散射光谱研究

用分子束外延方法在GaAs(100)衬底上生长了Zn1-xMgxSySe1-y四元半导体合金薄膜。用X－射线衍射方法确定了外延层的结构和晶格常数。测量了这些样品在平行和垂直两种不同几何配置下的拉曼散射光谱并对其特性做了研究。从实验上观察到了四类不同的晶格振动模：类ZnSe的TO和LO模拟及类ZnS和类MgS的LO模，实验发现：在ZnSe和ZnSSe中加入Mg使得类ZnSe的TO和LO模的振动频率下降；同时，也使类ZnS模的频率随S的增加率减小。     

ZnO-Si不同退火条件对生长ZnSe薄膜的影响

研究了作为缓冲层的ZnO薄膜在不同的退火时间、退火温度下退火对Si衬底上生长ZnSe膜质量的影响。当溅射有ZnO膜的Si(111)衬底的退火条件变化时，从X射线衍射谱（XRD）和光致发光谱（PL）中可见，ZnSe(111)膜的晶体质量有较大的变化。变温的PL谱表明，Si衬底上生长的具有ZnO缓冲层的ZnSe膜的近带边发射峰起源于自由激子发射。     

Boundary Layer Stability¶in Real Vanishing Viscosity Limit

In the previous paper [20], an Evans function machinery for the study of boundary layer stability was developed. There, the analysis was restricted to strongly parabolic perturbations, that is to an approximation of the form u _t +(F(u)) _x =ν(B(u)u _x ) _x $ (ν≪1) with an “elliptic” matrix B. However, real models, like the Navier–Stokes approximation of the Euler equations for a gas flow, involve incompletely parabolic perturbations: B is not invertible in general. We first adapt the Evans function to this realistic framework, assuming that the boundary is not characteristic, neither for the hyperbolic first order system u _t +(F(u)) _x = 0, nor for the perturbed system. We then apply it to the various kinds of boundary layers for a gas flow. We exhibit some examples of unstable boundary layers for a perfect gas, when the viscosity dominates heat conductivity. Received: 27 November 2000/ Accepted: 16 March 2001     

Thermal boundary layer for non-Newtonian fluid

Summary Analytical and numerical solutions for the momentum and thermal boundary layer equations of a non-Newtonian power law fluid are presented. The flow is assumed to be under the influence of an external magnetic fieldB (x) applied perpendicular to the surface and an electric fieldE(x) perpendicular toB(x) and the direction of the longitudinal velocity in the boundary layer. For the power law fluid it is assumed that the shear stress is proportional to then-th power of the velocity gradient andn is called the flow index. The variations of the velocity fieldf′, the temperature field θ, the shear stress on the surfaceτ _W , the displacement thicknessδ ₁ and the momentum thicknessδ ₂ with the magnetic-field parameter γ, the flow indexn, the heat transfer indexS and the Prandtl number Pr are studied. It is found that, if the outer flow velocityU(x) (potential flow) is proportional to the arc lengthx raised to a powerm, then the similarity solution for the thermal boundary layer equation is possible only whenm=1/3, which represents flow past a wedge of included angle π/2. It is established that the temperature of the wedge increases with the increase of γ, Pr,S and the decrease ofn. In general the magnetic field can be used as a heater for the surface of the wedge.     

Peritectic phase growth in directionally solidified Cu-70% Sn alloy

The growth mechanism of the peritectic η phase involving the peritectic reaction and peritectic transformation in Cu-70%Sn alloy was investigated under directional solidification. The results show that a major growth mechanism in thickening of the peritectic η-layer is not the peritectic reaction but the peritectic transformation. The transformation temperature and isothermal time play crucial roles in determining the volume fraction and the thickness of the peritectic η phase. With the increase of the temperature and isothermal time, the volume fraction of the peritectic η phase increases. The regressed data show that the relationship between the thickness of η phase (Δx) and the transformation temperature (T) meets the following equation In Δx=6.5−1673 1 / T. Additionally, there exists a relationship between the thickness of the η phase (Δx) and the isothermal time (t) at the 9 mm solidification distance below the peritectic reaction interface, Δx=0.72t ^1/2, which is consistent with the theoretical model. Supported by the National Science Foundation of China (Grant No. 50395102)     

Effect of Microbubble Gas Saturation on Near-Wall Turbulence and Drag Reduction

The article presents results of an experimental study of the effect of gravitational orientation of the flow along its lower/upper solid boundaries on reduction of turbulent drag and void fraction profiles with injection of gas through a porous channel wall. The shear stress on the wall was measured in the Reynolds number range Re_x = (0.23–1.1) × 10⁷ by floating element transducers; the void fraction profile was determined using a fiber-optic sensor. The void fraction in the inner (near-wall) region of the boundary layer was shown to be a key parameter for turbulent drag reduction. The size of the inner region depends on the gas flow rate, the fluid velocity, the distance downstream of the gas generator, and the gravitational orientation of the wall.     

Electron Transport Properties of Two-Dimensional Electron Gas in BexZn1−xO/ZnO Heterostructures

In this study, we have numerically investigated the conduction band structures, the carrier densities and the electron probability densities of pseudomorphic grown Be_xZn_1?xO/ZnO heterostructures using self-consistent solutions of one-dimensional, non linear Schrödinger–Poisson equations. In the calculations, two-dimensional electron gas (2DEG) formations were observed in the studied heterostructures and the effects of layer thickness and Be-mole fraction (x) of Be_xZn_1?xO barrier layer on 2DEG were described. For possible transistor device applications, 10 nm Be_xZn_1?xO barrier layer structure with x = 0.08 has been suggested. For this structure, we examined the variation of electron mobility with temperature using analytical calculations. Because of the polarization-induced low carrier densities, we found that the background impurity scattering has a strong effect on total electron mobility even at room temperature.     

Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well

We theoretically study the influence of spacer layer thickness fluctuation（SLTF） on the mobility of a twodimensional electron gas（2DEG） in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.     

Laser Acoustic Probing of Two‐Temperature Zone Created by Femtosecond Pulse

We combine theoretical and experimental methods to study the processes induced by fast laser heating of metal foils. These processes reveal themselves through motion of frontal (irradiated) and rear‐side foil boundaries. The irradiated targets are 0.3‐2 micron thick aluminum foils deposited on much thicker (150 microns) glass plate. The instant boundary positions is measured by pump‐probe technique having ∼40‐150 fs time and ∼1 nm spatial resolutions. Ultrashort laser pulse transforms a frontal surface layer with thickness d_T into two‐temperature (T_e ≫ T_i) warm dense matter state. Its quantitative characteristics including its thickness are defined by poorly known coefficients of electron‐ion energy exchange α and electron heat conductivity κ. Fast laser heating rises pressure in the d_T‐layer and therefore produce acoustic waves. Propagation and reflection from the frontal and rear boundaries of these waves causes the displacement Δx (t) of boundary positions. Pressure wave profiles, and hence functions Δx (t), depend on thickness d_T. This is why the experimental detection of Δx (t) opens a way to accurate evaluation of the coefficients α and κ (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Defect-dependent nitride surface layer development upon nitriding of Fe–1 at.% Mo alloy

Upon nitriding of binary Fe–1 at.% Mo alloy in a NH₃/H₂ gas mixture under conditions (thermodynamically) allowing γ′-Fe₄N_{1– x} compound layer growth (nitriding potential: 0.7?atm^?1/2 at 753?K (480?°C) – 823?K (550?°C)), a strong dependency of the morphology of the formed compound layer on the defect density of the specimen was observed. Nitriding of cold-rolled Fe–1 at.% Mo specimens leads to the formation of a closed compound layer of approximately constant thickness, comparable to nitriding of pure iron. Within the compound layer, that is, in the near-surface region, Mo nitrides are present. The growth of the compound layer could be described by a modified parabolic growth law leading to an activation energy comparable to literature data for the activation energy of growth of a γ′-Fe₄N_{1? x} layer on pure iron. Upon low temperature nitriding (i.e. ?793?K (520?°C)) of recrystallized Fe–1 at.% Mo specimens, an irregular, ‘needle-like’ morphology of γ′-Fe₄N_{1? x} nucleated at the surface occurs. This γ′ iron nitride has an orientation relationship (OR) with the matrix close to the Nishiyama–Wassermann OR. The different morphologies of the formed compound layer can be interpreted as consequences of the ease or difficulty of precipitation of Mo as nitride as function of the defect density.     

PtMn层厚度对NiFe/PtMn双层膜交换偏置形成及热稳定性的影响

采用磁控溅射的方法制备了一组以(Ni_0.81Fe_0.19)_1-xCr_x作为缓冲层的NiFe/PtMn双层膜样品，研究了NiFe/PtMn双层膜的形成过程和热稳定性.实验表明，Cr成分的不同会引起NiFe/PtMn双层膜中PtMn层晶粒尺寸的不同，使NiFe/PtMn双层膜的交换偏置场与PtMn层厚度之间呈现不同的变化关系.热稳定性实验表明，PtMn晶粒尺寸较大的样品，出现交换偏置现象所需要的临界厚度较小，热稳定性好，这与Mauri的理论模型一致. 关键词： NiFe/PtMn双层膜 交换偏置场 热稳定性     

硒化锌的气相外延生长

采用改进的气相外延法在(100)GaAs衬底上外延生长了ZnSe单晶膜。最大生长速率为每小时10μm左右。淀积过程的激活能为10kcal/mol。在77K的温度下测量了外延膜的光致发光,4460Å附近可以观察到很强的蓝色发射。外延膜的电阻率～1.1Ω·cm。