氢化非晶硅叠层薄膜对单晶硅表面钝化研究

采用等离子体增强化学气相沉积法生长的单层本征氢化非晶硅薄膜对单晶硅片进行钝化,结果表明增加氢稀释比有利于减少薄膜中的缺陷,增强钝化效果,过量的氢稀释比会导致非晶硅在硅片表面的外延晶化生长,降低钝化效果。退火导致非晶硅晶化程度增加,降低了钝化效果,同时退火提升了薄膜的质量,改变了H键合方式,增强了钝化效果。因此,单层氢化非晶硅只有在合适的氢稀释比和退火温度才可以获得最佳钝化效果。为了提高非晶硅薄膜对硅片的钝化效果,采用具有高低氢稀释比的叠层本征非晶硅薄膜对硅片进行钝化。因此将高氢稀释比沉积的非晶硅薄膜叠层生长于低氢稀释比的薄膜之上,避免非晶硅在硅片表面的外延生长。在退火过程中,高氢稀释比薄膜中的氢扩散到低氢稀释比薄膜中,有效地钝化了非晶硅中和单晶硅表面的悬挂键,改善了非晶硅/硅片的界面质量,叠层钝化后硅片的少子寿命为7.36 ms,隐含开路电压为732 mV。     

Si面4H-SiC衬底上外延石墨烯近平衡态制备

SiC热解法是制备大面积、高质量石墨烯的理想选择之一.外延石墨烯的晶体质量仍是制约其应用的关键因素之一.本文通过SiC热解法在4H-SiC(0001)衬底上制备单层外延石墨烯.通过引入氩气惰性气氛和硅蒸气,使SiC衬底表面的Si原子升华与返回概率接近平衡,外延石墨烯生长速率大大减慢,单层石墨烯的生长时间从15 min延长至75 min.测试分析表明,生长速率减慢,外延石墨烯中缺陷减少,晶体质量提高,使得外延石墨烯的电性能都得到改善,单层外延石墨烯的最高载流子迁移率达到1200 cm2/V·s,方阻604?/.以上结果表明,控制生长气氛,减慢生长速率是实现高质量外延石墨烯的可行途径之一.     

Role of ion energy flux on the structural and morphological properties of silicon oxy-nitride composite films deposited by plasma focus device

ABSTRACT

Crystalline silicon oxy-nitride (SiON) composite films are deposited on Si substrate for multiple (5, 15, 25 and 50) focus shots (FS) by plasma focus device. The X-rays diffraction patterns reveal the development of various diffraction peaks related to Si, Si₃N₄, and SiO₂ phases which confirms the formation of SiON composite film. The intensity of Si₃N₄ (1 0 2) plane is linearly increased with the increase of FS. The Si₃N₄ (1 0 2) phase does not nucleate for 5 FS. Raman analysis confirms the formation of β–Si–N phase. Raman and Fourier transform infrared spectroscopy analysis reveals that the strength of chemical bonds like Si–N, Si–O formed during the deposition process of SiON composite films is associated with the bonds intensity which in turn depends on the number of FS. The field emission scanning electron microscopic analysis reveals that the surface morphology like size, shape and distribution of micro/nano-dimensional particles, film compactness and the formation of micro-rods, micro-teethes and micro-tubes of SiON composite films is entirely associated with the rise in substrate surface transient temperature which in turn depends on the increasing number of FS. The EDX spectrum confirms the presence of Si (22.5?±?4.7 at. %), N (13.4?±?4.5 at. %) and O (54.7?±?11.3 at. %) in the SiON composite film. The thickness of SiON composite film deposited for 50 FS is found to ～15.47?µm.     

Positive and Negative Pulse Etching Method of Porous Silicon Fabrication

We present a new method in which both positive and negative pulses are used to etch silicon for fabrication of porous silicon （PS） monolayer. The optical thickness and morphology of PS monolayer fabricated with different negative pulse voltages are investigated by means of reflectance spectra, scanning electron microscopy and photoluminescence spectra. It is found that with this method the PS monolayer is thicker and more uniform. The micropores also appear to be more regular than those made by common positive pulse etching. This phenomenon is attributed to the vertical etching effect of the PS monolayer being strengthened while lateral etching process is restrained. The explanation we propose is that negative pulse can help the hydrogen cations （H^＋） in the electrolyte move into the micropores of PS monolayer. These H^＋ ions combine with the Si atoms on the wall of new-formed micropores, leading to formation of Si-H bonds. The formation of Silt bonds results in a hole depletion layer near the micropore wall surface, which decreases hole density on the surface, preventing the micropore wall from being eroded laterally by F^- anions. Therefore during the positive pulse period the etching reaction occurs exclusively only at the bottom of the micropores where lots of holes are provided by the anode.     

机械-化学方法在硅(100)表面制备芳香烃重氮盐单层膜

利用机械-化学方法同时实现硅表面的图形化和功能化. 在芳香烃重氮盐(C₆H₅N₂BF₄)中用金刚石刀具刻划单晶硅(100),使单晶硅表面的Si-O键断裂,形成硅的自由基,进而它们与溶液中含有的有机分子共价结合以形成自组装单层膜. 用原子力显微镜对自组装前后的表面形貌进行表征,用飞行时间二次离子质谱和红外光谱对自组装单层膜进行检测和分析,通过确认C₆H₅离子的存在证明自组装单层     

Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm⁻¹ under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.     

Formation of oriented rodlike nickel silicide precipitates during magnetron deposition of carbon and nickel on silicon

Formation of rodlike structures elongated in the 〈100〉 and 〈010〉 directions of silicon crystal was observed during magnetron codeposition of carbon and nickel on (100) silicon substrate with a natural oxide layer. Rodlike structures did not form during deposition in similar conditions on (111) silicon substrate. It has been revealed that the rodlike structures represent epitaxial nickel silicide precipitates. The results of experimental study of the composition, structure, and shape of forming silicide clusters as a function of the silicon substrate orientation and the codeposited layer thickness are presented.     

一种应用于MOCVD的3波长在线红外测温方法

根据金属有机物化学气相沉积(MOCVD)在线红外测温的发展需要,提出一种3波长免探测孔有效面积校准和反射率修正的测温方法。给出了探测1 300 nm、1 150 nm、940 nm 3波长的在线测温探头设计方案和光路图,将该探头应用于THOMAS SWAN CCS MOCVD 5.08 cm (2英寸)Si(111)衬底上生长10 μm GaN外延层的在线测温。测量结果表明:在700 ℃~1 100 ℃范围内,探头多次测量的重复性误差在1.0 ℃内,在950 ℃~1 100 ℃范围内,以EpiTT红外测温仪为参考,探头测温精度在1 ℃内,距离容差性为2 mm。该探头应用于我国自主研发的MOCVD 5.08 cm Si(111)衬底上生长InGaN/GaN MQW结构蓝光LED外延片,可得最低测温量程为435 ℃,n-GaN生长过程中测量噪声为0.75℃。结果分析表明:该3波长免修正在线红外测温法对于高质量单层薄膜外延生长具有一定可行性,对于多层复杂结构外延生长需要进一步改进。     

Dependence of the Schottky barrier on the work function at metal/SiON/SiC(0001) interfaces identified by first-principles calculations

We report investigations based on density functional theory that clarify the dependence of the Schottky barrier height (SBH) on the work function of metals at metal/SiON interfaces formed on the 6H-SiC(0001) surface. We have found that the density of atoms in the Al layer affects neither its work function nor the SBH formed when the layer contacts with the SiON surface. More importantly, the SBH for the B overlayer is lower compared with that for the Al layer, reflecting a difference in the work function of the layers. The present result clearly indicates that Fermi-level pinning does not occur for SiON on SiC(0001), which means that the SBH is controllable for metal/SiON/SiC systems by changing the work function of metals.     

First-principles study of ferromagnetism in epitaxial Si-Mn thin films on Si(001)

Density-functional theory calculations are employed to investigate both the epitaxial growth and the magnetic properties of thin Mn and MnSi films on Si(001). For single Mn adatoms, we find a preference for the second-layer interstitial site. While a monolayer Mn film is energetically unfavorable, a capping-Si layer significantly enhances the thermodynamic stability and induces a change from antiferromagnetic to ferromagnetic order. For higher Mn coverage, a sandwiched Si-Mn thin film (with CsCl-like crystal structure) is found to be the most stable epitaxial structure. We attribute the strong ferromagnetic intralayer coupling in these films to Mn 3d-Si 3s3p exchange.     

Effect of growth conditions on photoluminescence of erbium-doped silicon layers grown using sublimation molecular-beam epitaxy

Erbium-doped epitaxial silicon layers were grown using two different growth techniques, namely, commonly used molecular-beam epitaxy (MBE) and solid-phase epitaxy (SPE). It is shown that an erbium-doped silicon epitaxial layer deposited through SPE on a cold substrate and subsequently annealed displays amore intense photoluminescence at a wavelength of 1.54 μm than do MBE-grown layers. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 102–104. Original Russian Text Copyright ? 2004 by Shengurov, Svetlov, Chalkov, Andreev, Krasil’nik, Kryzhkov.     

Morphology and electronic structure of bcc Co(1 1 0) and fcc/hcp Co(1 1 1) on Fe(1 1 0) investigated by STM and STS

We report on the growth of ultrathin epitaxial Co films on Fe(1 1 0) examined by scanning tunneling microscopy and spectroscopy (STM and STS). At room temperature Co forms pseudomorphic, ideally ordered body-centered cubic (bcc) layers for the first two monolayers as confirmed by atomically resolved STM images. This is in contrast to the related case of Co/Cr(1 1 0) where a superstructure occurs in the second layer. The third monolayer forms a close-packed structure and causes a transformation of the buried second monolayer into a close-packed structure. The Fe(1 1 0) substrate strongly influences the electronic structure of the first Co monolayer as concluded from the dI/dU spectra. This influence is less important for the second monolayer. The measured local density-of-states function for the bcc Co double layer is in agreement with theoretical predictions for bcc Co.     

ECRCVD技术淀积太阳电池的减反膜

本文报道了用电子回旋共振化学气相淀积(ECRCVD)技术实现了低温(50℃)淀积SiON/SiN膜作硅太阳电池减反射膜的实验研究.探讨了影响薄膜性能的主要工艺参数,设计了具有较佳抗反效果的双层减反膜,并对膜层的反射率和太阳电池参数进行了测定.结果表明:该减反膜具有良好的减反效果,能实现较宽波段范围内的均匀增透,使太阳电池短路电流密度提高了42%,电池转换效率提高了45%.     

Technological aspects of oxidated porous silicon waveguides

Technological aspects related to the fabrication of buried oxidized porous silicon waveguides (OPSWG) as the influence of swirl defects and a suitable epitaxial method to bury OPSWG have been investigated. The influence of swirl defects on OPSWG performances is presented. The formation of a non-homogeneous porous silicon, caused by swirl defects, results in an incomplete oxidation and in an increase of optical loses. The idea of burying waveguides has been tested by a suitable epi process covering using dichlorosilane and silane as reacting gases. The paper presents and discusses the preliminary results. In this paper, are presented the technological studies related to the fabrication of buried OPSWG: (i) swirl defects influence on the structure and on the guiding properties of OPSWG; (ii) epitaxial deposition process suitable for the realization of defects free silicon layer over the OPSWG.     

Epitaxial gallium oxide on a SiC/Si substrate

Well-textured gallium oxide β-Ga₂O₃ layers with a thickness of ~1 μm and a close to epitaxial layer structure were grown by the method of chloride vapor phase epitaxy on Si(111) wafers with a nano-SiC buffer layer. In order to improve the growth, a high-quality silicon carbide buffer layer ~100 nm thick was preliminarily synthesized by the substitution of atoms on the silicon surface. The β-Ga₂O₃ films were thoroughly investigated using reflection high-energy electron diffraction, ellipsometry, X-ray diffraction, scanning electron microscopy, and micro-Raman spectroscopy. The investigations revealed that the films are textured with a close to epitaxial structure and consist of a pure β-phase Ga₂O₃ with the (\(\overline 2 01\)) orientation. The dependence of the dielectric constant of epitaxial β-Ga₂O₃ on the photon energy ranging from 0.7 to 6.5 eV in the isotropic approximation was measured.     

Polarized Raman Scattering in Silicon Layers on Sapphire

The intensities of polarized components of Raman light scattering are measured for different crystallographic directions in epitaxial layers of silicon on sapphire. The experiment shows that the scattered radiation has a strong depolarized component, which is directly related to the occurrence of defects in the epitaxial layer. A model of an ensemble of crystallites is proposed to describe a defect crystal silicon layer on sapphire. It is shown that the characteristic value of disordering of crystalline domains in the epitaxial layer can be determined from the ratio between the intensities of the polarized and depolarized components. From measurements of the Raman scattering intensity as a function of the crystallographic direction, the anisotropy of the Raman scattering tensor is determined. Numerical values for two samples are obtained.     

Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III–V compound semiconductors are functionally integrated onto non-single-crystal platforms.     

Nanosecond laser-induced reshaping of periodic silicon nanostructures

We demonstrated the use of laser-induced reshaping to produce periodic silicon nanostructures (PSNs) with different geometries. Periodically located silicon nanostructures were preformed by dry etching of a silicon wafer covered with a monolayer of self-assembled polystyrene nanospheres. These PSNs were reshaped under ambient conditions by irradiation with two kinds of nanosecond lasers (532 nm and 355 nm). The effects of the irradiation parameters on the reshaped geometry were systematically investigated. Vertical growth of the irradiated PSNs resulted from the epitaxial deposition of rich silicon vapor during laser irradiation. However, the growth was limited even with higher laser fluence because of the nanoscale structure, the size of which is smaller than the melting depth induced by the nanosecond lasers. The reshaped PSNs displayed reflection spectra that are tunable by varying the characteristics of reshaping-laser input. This method offers a promising approach for the site-selective fabrication of optically tunable 3D nanostructures.     

SiON钝化膜对硅衬底氮化镓绿光LED可靠性的影响

研制了4种不同表面钝化类型Si衬底GaN基绿光LED,分别标记为样品A、B、C、D.样品A无钝化层,样品B为台面SiON钝化,样品C为侧面SiON钝化,样品D为台面和侧面均钝化.将4种样品进行了常温60 mA(电流密度312 A/cm2)下168 h的加速老化,并对比了老化前后的I-V和光衰等特性.结果表明:侧边的Si...     

Features of atomic and electronic structure of oxides on porous silicon surface according to XANES data

Based on synchrotron research of the fine structure main parameters of SiL _{2, 3} X-ray absorption edges (X-ray absorption near edge structure (XANES)) in porous silicon on boron-doped Si(100) wafers, the thickness of the surface oxide layer and the degree of distortions of the silicon-oxygen tetrahedron in this layer were estimated. The thickness of the oxide layer formed on the amorphous layer coating nanocrystals of porous silicon exceeds the thickness of the native oxide on the surface of Si(100) : P and Si(100) : B single-crystal (100) silicon wafers by several times. Distortion of the silicon-oxygen tetrahedron, i.e., the basic unit of silicon oxide, is accompanied by Si-O bond stretching and an increase in the angle between Si-O-Si bonds.