自组织生长锗硅量子点及其特性

半导体量子点的研究是当今物理学研究的热点之一．文章阐述了锗硅量子点自组织生长方法的基本原理和技术，并介绍了所制备的量子点材料的形貌结构、光学特性、电学特性及今后的发展方向．     

ECRCVD技术淀积太阳电池的减反膜

本文报道了用电子回旋共振化学气相淀积(ECRCVD)技术实现了低温(50℃)淀积SiON/SiN膜作硅太阳电池减反射膜的实验研究.探讨了影响薄膜性能的主要工艺参数,设计了具有较佳抗反效果的双层减反膜,并对膜层的反射率和太阳电池参数进行了测定.结果表明:该减反膜具有良好的减反效果,能实现较宽波段范围内的均匀增透,使太阳电池短路电流密度提高了42%,电池转换效率提高了45%.     

THE DISTRIBUTION OF Sb ATOMS IN δ-DOPED SILICON CRYSTAL

The distribution of Sb atoms in δ-doped silicon crystals grown by molecular beam epitaxy at different temperatures was measured using the technique of synchrotron radiation X-ray low angle reflection. The esults indicate that the doped Sb atoms are distributed exponentially in the epitaxial layers, and the 1/e decay lengths are 0.45, 0.95 and 3.5 nm for the samples grown at temperatures of 250, 300 and 350℃, respectively. For samples grown at 400℃, the 1/e decay length of the Sb atomic distribution increases drastically because of the segregation of Sb atoms during the growth process.