Si对Nd2Fe14B四方相结构和磁性的影响

本文对Si加入Nd₂Fe₁₄B四方相后所形成的合金相的结构和磁性进行了研究。结果表明,Si加入Nd₂Fe₁₄B四方相后并不破坏它的结构(Si的含量可达B的两倍),而形成Nd₂(Fe,Si)₁₄B赝三元金属间化合物。随着Si含量的增加,晶格常数和饱和磁化强度随之减小,但居里温度则随之增加。Si的加入,并不改变Nd₂Fe₁₄B的室温各向 关键词：     

Nd2(Fe1-xMnx)14B的低温内禀矫顽力

当x<0.5时,Nd₂(Fe_1-xMn_x)₁₄B可形成四方晶体结构,空间群为P4₂/mnm。在低温下,该赝三元化合物的大块铸态样品具有高矫顽力。此矫顽力不依赖于热处理等工艺过程,因此具有内禀性质。内禀矫顽力 _iH_c与样品的成分有关。Nd₂(Fe_1-xMn_x)₁₄B的起始磁化曲线具有传播场H_p,并且H_p的数值与 _iH_c接近。这表明内禀矫顽力是由畴壁钉扎造成的。研究了 _iH_c与温度的变化关系,并估算了钉扎位垒的强度。测量了Nd₂(Fe_1-xMn_x)₁₄B的居里温度和饱和磁化强度。在此赝三元化合物中,交换作用随Mn对Fe的替换而急剧降低。这使得畴壁厚度变窄。Nd₂(Fe_1-xMn_x)₁₄B的磁化和反磁化行为可用窄畴壁的特征来解释。 关键词：     

取向Pr2Fe14B与Nd2Fe14B多晶磁化曲线的 计算

基于单离子晶场模型,提出了计算稀土-Fe(Co)金属间化合物取向多晶样品磁化曲线的方法.用此方法计算了取向Pr₂Fe₁₄B和Nd₂Fe₁₄ B多晶的高场磁化曲线,计算中使用了拟合化合物单晶磁化曲线得到的交换场与晶场参数.计 算曲线与实验曲线相符合. 关键词： 磁化曲线 晶场 2Fe₁₄B')" href="#">R₂Fe₁₄B     

复相Nd4.5Fe76.3Ga0.3Co1.0B18合金的结构与磁性

利用快淬法制备了Nd_4.5Fe_76.3Ga_0.3Co_1.0B₁₈非晶合金,晶化处理后获得主相为Fe₃B与Nd₂Fe₁₄B的纳米晶永磁材料.采用X射线衍射、透射电子显微镜及磁测量手段分析研究了材料的微观结构与磁性能,并通过测量磁体的δM曲线,研究了晶粒间的交换耦合作用及其与微观结构、磁性能的关系. 关键词：     

R2Fe14B型永磁材料中第二磁晶各向异性常数对反磁化过程的影响

针对低温下各向同性Pr₂Fe₁₄B永磁材料的最小形核场问题，用数值 计算法和近似解 析解研究了第二磁晶各向异性常数K₂对最小形核场的影响.研究发现，尽管对于 Nd₂ Fe₁₄B永磁材料一级近似的解析解与数值计算结果很接近，但是对于低温下各向 同性P r₂Fe₁₄B永磁材料则至少要用二级近似下的解析解才能与数值计算 结果相接近.用有 关最小形核场的计算结果很好地解释了低温时各向同性Pr₂Fe₁₄B永 磁材料的矫顽力与最小形核场的关系. 关键词： 第二磁晶各向异性常数 形核场 矫顽力     

Nd2Fe14B化合物磁晶各向异性起源的理论研究

本文根据Nd₂Fe₁₄B化合物中存有少量巡游电子的基本实验事实,提出了在Nd₂Fe₁₄B中配位子所产生的晶场和巡游电子所产生的电场共同造成了Nd离子磁晶各向异性的理论模型。提出并解决了计算巡游电子同中心Nd离子相互作用的理论方法。在同时考虑Nd离子所受配位子的晶场和巡游电子的电场的作用情况下,用单离子模型计算了Nd₂Fe₁₄B中Nd离子所产生的磁晶各向异性及其随温度的变化。所 关键词：     

Dy在Nd2Fe14B晶格中的占位及其对Fe原子磁矩影响的第一性原理计算

基于第一性原理投影缀加波和梯度矫正局域密度近似(PAW-GGA), 研究了Nd₂Fe₁₄B和Dy₂Fe₁₄B的基态晶格属性, 进而对Dy在Nd₂Fe₁₄B晶格中的掺杂进行了研究, 并采用GGA+U的方式进行了原子磁矩计算, 并与自旋轨道耦合 (SOI) 计算结果进行了对照. 置换计算表明, Dy原子倾向于置换Nd₂Fe₁₄B晶格中4f位的稀土原子. 磁矩计算表明, 在R₂Fe₁₄B (R: 稀土元素) 晶格中, 4f位的稀土元素与Fe原子作用更强, 对磁性能的影响更大. 稀土原子与Fe的作用与距离呈正相关. 关键词： 2Fe₁₄B')" href="#">Nd₂Fe₁₄B 晶格占位 形成能 原子磁矩     

快淬Nd3.6Pr5.4Fe83Co3B5薄带的反磁化行为和磁黏滞性

用电弧熔炼法制备了Nd_3.6Pr_5.4Fe₈₃Co₃B₅合金铸锭,然后利用熔旋快淬法在铜辊转速V=20m/s下制备了Nd_3.6Pr_5.4Fe₈₃Co₃B₅薄带.快淬带主要由软磁相α-Fe和Nd₂Fe₁₄B型的硬磁相组成.采用直流退磁剩磁曲线方法分析了样品在反磁化过程中的可逆与不可逆磁化部分,并研究了软磁相和硬磁相的反磁化行为,得到样品的不可逆磁化形核场H_no约为440kA/m.同时研究了样品的磁黏滞性,结果表明由于软磁相的存在使得热激活体积较大. 关键词：     

热处理对非晶态合金Nd4Fe96-xBx磁性的影响

本文研究了用单辊急冷方法制备的非晶态合金Nd₄Fe_96-xB_x的晶化,以及热处理对其硬磁性和相组成的影响,发现非晶态合金Nd₄Fe_96-xB_x的晶化温度比相同B含量的非晶态合金Fe_100-xB_x高120—190K,X射线衍射和热磁测量表明,15≤x≤25的样品晶化相是由Nd₂Fe₁₄B(T 关键词：     

Nd2(Fe,Si)17合金的结构与磁性

本文对Nd-Fe-Si三元系富铁区域相的结构和磁性进行了研究。结果表明,Nd-Fe-Si三元系富铁区域(Fe>40at％),除出现NdFe₂Si₂三元金属间化合物外(Si>20at％),同时只出现Nd₂(Fe,Si)₁₇赝二元金属间化合物,其中Si取代9d位的Fe原子,而不能形成类似于Nd₂Fe₁₄B的三元金属间化合物,Si取代Nd₂Fe₁₇中的9d位Fe原子后,使晶胞体积缩小;使饱和磁化强度减小;同时使Fe次晶格的铁磁相互作用增强,导致居里温度增高;还使得Fe次晶格的易面各向异性减弱,造成室温下各向异性场减小。 关键词：     

Thickness dependence of magnetic domain formation in La0.6Sr0.4MnO3 epitaxial thin films studied by XMCD-PEEM

We have used photoelectron emission microscopy (PEEM) and X-ray magnetic circular dichroism (XMCD) to study the effect of thin film thickness on the magnetic domain formation in La_0.6Sr_0.4MnO₃ samples that were epitaxially grown on stepped SrTiO₃ (0 0 1) substrates. The magnetic image exhibited a stripe structure elongated along the step direction, irrespective of film thickness, suggesting that uniaxial magnetic anisotropy induced by step-and-terrace structures plays an important role in the magnetic domain formation. Additional domains evolved gradually with increasing film thickness. In these domains, the direction of magnetization differed from the step direction due to biaxial magneto-crystalline anisotropy. The evolution of additional magnetic domains with increasing film thickness implies that a competition exists between the two anisotropies in LSMO films.     

Magnetization reversal in [Ni/Pt]6/Pt(x)/[Co/Pt]6 multilayers

The magnetization reversal is studied in magnetron sputtered artificial superstructures of the form [Ni/Pt]₆/Pt(x)/[Co/Pt]₆ with perpendicular anisotropy, in which the [Co/Pt]₆ stacks have higher coercivity than the [Ni/Pt]₆. For x≥2 nm the two stacks reverse separately and exhibit characteristic stepped loops with a “plateau” in the region between the two switching fields. First-Order Reversal Curves (FORCs) reveal that the maximum coupling is obtained for x=1.5 nm. While each of the Ni/Pt and Co/Pt stacks by itself is thin enough to reverse in large domains when they are coupled, formation of maze like domains is observed. In this case some reversibility of the demagnetization curves associated with interfacial domain wall pinning appears while in the rest of the cases the reversal mechanism is based on lateral domain wall pinning with low reversibility. In the loops monitored by Extraordinary Hall Effect (EHE) measurements this “plateau” appears as a hump due to the different sign of the EHE coefficient between the [Ni/Pt]₆ and [Co/Pt]₆.     

MFM studies of magnetic domain patterns in bulk barium ferrite (BaFe12O19) single crystals

Magnetic domain patterns in bulk barium ferrite (BaFe₁₂O₁₉; BaM) single crystals on the basal plane and the prism plane were measured and studied by magnetic force microscopy (MFM). The surface domain pattern is in the form of flowers or star on the basal plane and long elongated spikes or stripe domains on the prism plane. The change in domain structure with applied field (H_app) and the thickness (T) dependence on domain width (δ) was observed. The domain width decreased from 32 to 9 μm for the crystals of 800-100 μm thicknesses, respectively.     

Study of domain structure and magnetization reversal after thermal treatments in Fe40Co38Mo4B18 microwires

We have studied the effect of thermal treatment on the magnetic domain structure and magnetic reversal process of amorphous and nanocrystalline Fe₄₀Co₃₈Mo₄B₁₈ microwires. The domain structure and the magnetization reversal of amorphous FeCoMoB microwires reflect the complex stress distribution introduced by the glass coating. Hence, the thickness of radial domain structure decreases with temperature and the temperature dependence of the switching field presents a discontinuous behavior. After nanocrystallization, the domain structure of FeCoMoB microwire is almost constant within the temperature range 10-400 K and the switching field decreases almost linearly with temperature mostly because of the decrease of saturation magnetization.     

KTa1-xNbxO3晶体的同步辐射X射线白光形貌术研究

利用北京同步辐射光源，对居里点在室温附近的掺铁钽铌酸钾光折变晶体进行了Ｘ射线白光形貌术研究．观察显示，晶体内部除了杂质偏析物和一组沿［０１０］方向的生长层外，还有一组与之正交的畴组态，后者被发现不满足一般面缺陷的衬度消光规律，仅有异常散射效应揭示其衬度．利用同步辐射波长的可调谐性，揭示了该组畴随波长改变其衍时衬度变化的规律，而且畴的衍射强度被发现违背Ｆｒｉｅｄｅｌ定律．依据实验证据，这组畴被确认为１８０°铁电畴．对畴形成原因和晶体生长特性进行了讨论． 关键词：     

Magnetization reversal process and intrinsic coercivity of sputtered Sm2Co17-based films

The Sm₂Co₁₇-based intermetallic films with additives of Fe, Cu, and Zr have been deposited on Si(1 0 0) substrates by dc magnetron sputtering process. Subsequent thermal treatment and the film thickness are found to have significant contribution to the crystal structure and grain structure, which determines the magnetization reversal process and intrinsic coercivity (H_C) of these films. The conventional thermal annealing (CTA) treatment almost failed to crystallize the as-deposited films, leading to a very low H_C. Continuous and homogeneous domain walls cannot form in this deteriorated microstructure, so that the pinning mechanism can be excluded. Contrarily, the films with thickness exceeding 0.8 μm treated by rapid recurrent thermal annealing (RRTA) show an improved H_C, which is attributed to the observed completed crystallization and compact microstructure. It is suggested that this film structure is responsible for providing continuous and homogeneous domain walls, leading to a magnetization reversal process controlled by domain wall pinning model. In special, the H_C of the RRTA-treated film with thickness of 1.8 μm shows a good temperature dependence from 25 to 300 °C, with intrinsic coercivity temperature coefficient β of −0.23%/°C.     

Influence of Pt thickness on magnetization reversal processes in (Pt/Co)3 multilayers with perpendicular anisotropy

We present a detailed study of the magnetization reversal in perpendicularly magnetized (Pt/Co)₃ multilayers with different values of the platinum interlayer thickness t_Pt. To study the magnetization reversal in our samples we combined measurements of relaxation curves with the direct visualization of domain structures. Magnetization reversal was dominated by domain wall propagation for t_Pt=1 nm and by domain nucleation for t_Pt=0.2 nm, while a mixed process was observed for t_Pt=0.8 nm. We interpret our results within the framework of a model of thermally activated reversal where a distribution of activation energy barriers is taken into account. The reversal process was correlated with the energy barrier distribution.     

外延PbZr0.4Ti0.6O3薄膜厚度对其铁电性能的影响

从Landau-Devonshire唯象理论出发，考虑到晶格失配导致的NFDA3位错应力场与极化场的耦合，研究了在SrTiO₃衬底上外延生长的PbZr_0.4Ti_0.6O₃薄膜厚度对其自发极化强度、电滞回线的影响. 结果表明，产生刃位错的PbZr_0.4Ti_0.6O₃薄膜临界厚度为～1.27nm，当薄膜厚度大于临界厚度时，在所形成的位错附近，极化强度出现急剧变化，形成自发极化强度明显减弱的“死层”；随着薄膜厚度的减小，位错间距增大，“死层”厚度与薄膜总厚度之比增加. 由薄膜电滞回线的变化情况可知，其剩余极化强度随着薄膜厚度的减小而逐渐减小. 关键词： 铁电薄膜 自发极化强度 电滞回线 位错     

Magneto-optical studies on ferromagnetic stripe domains in K2CuF4

Ferromagnetic stripe domains are observed in K₂CuF₄ below T_c=6.19 K by use of Faraday rotation (FR). They are about 4 μm wide and lie parallel to the c-planes. They are due to a very small intraplanar anisotropy field as a result of the minute orthorhombic lattice distortion observed by Hidaka and Walker. A stripe domain model, including closure domains for complete demagnetization, is in accordance with the experimental observations if the anisotropy fields H^out_A=1.4kOe and Hⁱⁿ_A=0.1 Oe are introduced. Long-range order, presumably induced by interplanar exchange, is a accompanied by 3d Ising critical behavior as verified by critical exponents obtained from different magneto-optical measurements (α=0.07, β=0.33 and δ=4.6). Changes of the domain structure, of the ac-plane FR, and of the ac-plane linear birefringence due to a transverse magnetic field H 6 a are discussed. A non-vanishing internal field is preceded by a domain instability. The compatibility of the domain structure with neutron scattering results of Hirakawa and Yoshizawa is discussed.     

Microstructural and domain effects in epitaxial CoFe2O4 films on MgO with perpendicular magnetic anisotropy

CoFe₂O₄ (CFO) epitaxial thin films of various thicknesses were grown on MgO substrates using the pulsed electron-beam deposition technique. The films have excellent in-plane coherence with the substrate, exhibit layer-by-layer growth and have well-defined thickness fringes in x-ray diffraction measurements. Atomic force microscopy (AFM) measurements indicate that misfit dislocations form in thicker films and the critical thickness for the dislocation formation is estimated. Perpendicular magnetic anisotropy in CFO due to epitaxial in-plane tensile strain from the substrate was found. A stripe-like domain structure in the demagnetized state is demonstrated using magnetic force microscopy (MFM), in agreement with previous predictions. Coercivity increased in thicker films, which is explained by domain wall pinning due to misfit dislocations at the CFO/MgO interface.