碳、碳氮和硼碳氮纳米管场发射性能的比较研究

采用高温热解法在860℃分别制备出了碳、碳氮和硼碳氮纳米管，提纯后利用丝网印刷工艺分别将它们制备成薄膜，并测试了它们的场发射性能.结果表明：碳纳米管、碳氮纳米管和硼碳氮纳米管薄膜的开启电场分别为2.22，1.1和4.4V/μm，当电场增加到5.7V/μm时，它们的电流密度分别达到1400，3000μA/cm²和小于50μA/cm².碳和碳氮纳米管薄膜的场增强因子分别为10062和11521.可见，碳氮纳米管的场发射性能优于碳纳米管，而硼碳氮纳米管的场发射性能比前两者要差.解释了这三种纳米管场发射性能差别的原因. 关键词： 碳纳米管 碳氮纳米管 硼碳氮纳米管 场发射     

硅掺杂铝镓氮薄膜场发射性能研究

利用脉冲激光沉积,分别制备了一系列不同Si掺杂浓度的铝镓氮(AlGaN)薄膜.对此薄膜进行场致电子发射测试表明,Si掺杂浓度为1％的AlGaN薄膜具有最好的场发射特性.相对于非掺杂样品,其场发射电流明显增加,场发射开启电场显著降低.掺杂带来载流子浓度的提升,为场发射提供足够的电子源,使样品的场发射性能提升.但掺杂浓度的进一步提高,薄膜缺陷增加,电子迁移率降低,其薄膜内部电子输运能力降低大于电子浓度的增加对场电子发射的贡献,导致场发射性能开始变差.     

CNx纳米管的制备、结构观察及低场致电子发射性能研究

采用高温热解法 ,以乙二胺为前驱液 ,在沉积有铁催化剂的p型硅 (1 1 1 )基底上制备出了定向生长的CNx 纳米管 .利用扫描电子显微镜、高分辨率透射电子显微镜和拉曼光谱对CNx 纳米管进行了形貌观察和表征 .CNx 纳米管的高度在 2 0 μm左右 ,直径在 5 0— 1 0 0nm之间 ,具有明显的“竹节状”结构 ,结晶有序度较差 .对CNx 纳米管薄膜进行低场致发射性能测试 :外加电场为 1 4V μm ,观察到 2 0 μA cm2 发射电流 ,外电场升至 2 5 4V μm时发射电流达到1 2 80mA cm2 ,在较高外电场下 ,没有发现电流“饱和” .这比相同实验条件下改变前驱液制备出的碳纳米管和硼碳氮纳米管的场发射性能优越 .还在“竹节状”结构的基础上对CNx 纳米管的场致电子发射机理进行了讨论     

封装钠的硼氮纳米管在垂直构型下场发射的第一性原理研究

采用密度泛函形式化的自洽方法模拟了纯的硼氮纳米管和封装钠的硼氮纳米管在垂直于管轴的电场作用下的场发射. 发现硼氮纳米管封装钠之后的近自由电子态参与场发射并表现出很强的发射特性.通过分析场发射总能量分布曲线的特征,探索近自由电子态对于场发射的作用和场发射电流对于外电场的响应. 发现在垂直管轴的发射构型下,场发射具有很灵敏的电场响应度,这是与硼氮纳米管中近自由电子态的特殊分布取向有关.     

碳掺杂硼氮纳米管电子场发射的第一性原理研究

对闭口硼氮纳米管（BNNT）顶层掺碳体系,运用第一性原理研究了电子场发射性能.结果表明,掺碳的BNNT体系电子结构变化显著;外电场愈强,体系态密度向低能端移动幅度愈大,且最高占据分子轨道（HOMO）/最低未占据分子轨道（LUMO）能隙愈小.体系态密度和局域态密度,HOMO和LUMO及其能隙分析一致表明,各种碳掺杂体系中C_eqBNNT的场发射性能最佳. 关键词： 硼氮纳米管 碳掺杂 第一性原理     

剪切形变对硼氮掺杂碳纳米管超晶格电子结构和光学性能的影响

碳纳米管作为最先进的纳米材料之一, 在电子和光学器件领域有潜在的应用前景, 因此引起了广泛关注. 掺杂、变形及形成超晶格为调制纳米管电子、光学性质提供了有效途径. 为了理解相关机理, 利用第一性原理方法研究了不同剪切形变下扶手椅型硼氮交替环状掺杂碳纳米管超晶格的空间结构、电子结构和光学性质. 研究发现, 剪切形变会改变碳纳米管的几何结构, 当剪切形变大于12%后, 其几何结构有较大畸变. 结合能计算表明, 剪切形变改变了掺杂碳纳米管超晶格的稳定性, 剪切形变越大, 稳定性越低. 电荷布居分析表明, 硼氮掺杂碳纳米管超晶格中离子键和共价键共存. 能带和态密度分析发现硼氮交替环状掺杂使碳纳米管超晶格从金属转变为半导体. 随着剪切形变加剧, 纳米管超晶格能隙逐渐减小, 当剪切形变大于12%后, 碳纳米管又从半导体变为金属. 在光学性能中, 剪切形变的硼氮掺杂碳纳米管超晶格的光吸收系数及反射率峰值较未受剪切形变的均减小, 且均出现了红移.     

碳纳米管场发射显示器的研究进展

碳纳米管因具有良好的电子发射特性而成为理想的场发射阴极材料,利用碳纳米管作阴极的场致发射平板显示器件的研究是目前显示技术领域的研究热点之一。报道了场发射显示器（FED）的结构及工作原理、阴极发射材料应具有的特点及碳纳米管在场发射领域中的应用情况。详细地论述了碳纳米管的场致发射特性,包括开启电场、发射电流密度、电流稳定性及发射点密度等,对国内外碳纳米管场发射显示器的发展现状及趋势作了回顾和展望,并对目前所面临的主要问题作了分析,同时提出了一些改进的思路。     

拉曼光谱研究掺杂与非掺杂碳纳米管电子性质的新进展(英文)

本文综述了非掺杂和掺杂碳纳米管拉曼光谱研究的新进展,特别注意到了悬浮液中单个分散的单壁纳米管、硼和氮掺杂的纳米管、碱金属插入的纳米管以及用化学方法功能化的单壁纳米管的拉曼光谱与其电子性质的相关性。讨论了所存在的问题,展望了可能的发展方向。     

碳掺杂闭口硼氮纳米管场发射第一性原理研究

运用第一性原理研究了闭口硼氮纳米管（BNNT）顶层掺碳体系（C@BNNT）的电子场发射性能.结果表明：随外电场增强,C@BNNT电子结构变化显著,态密度（DOS）向低能方向移动;碳原子的局域态密度（LDOS）在费米能级附近明显增大;赝能隙、最高占据分子轨道（HOMO）/最低未占据分子轨道（LUMO）能隙减小;体系电荷移向帽端.DOS,HOMO/LUMO及Mulliken电荷分析一致表明,与BNNT相比,C@BNNT电子场发射性能显著改善,且C@BN_moreNT性能更优. 关键词： 碳掺杂 硼氮纳米管 电子场发射 第一性原理     

碳纳米管场致电子发射新机制

基于对长达 1μm的 (5 ,5 )碳纳米管的量子力学计算 ,作者发现使碳纳米管具有优异场致电子发射特性的因素除了人们预期的尖端场增强之外 ,电荷在纳米管尖端的积累造成有效功函数 (真空势垒 )的非线性下降也起了非常重要的作用 .对外加电场Vappl=10— 14V/ μm下的碳纳米管进行了计算 ,得到与实验结果相近的发射电流     

A novel approach to improve the field emission characteristics of printed CNT films

A novel post-treatment method, including hard hairbrush and electrical treatment, is performed intentionally to improve the field emission capability and stability of screen-printed carbon nanotubes （CNTs）. Compared with untreated films, the field emission properties of the treated ones are greatly enhanced. Scanning electron microscopy （SEM） and Raman spectrum studies reveal that field emission properties are enhanced by two factors. Firstly, the improved field emission properties of CNT films can be attributed to the more active CNT surface by removing the organic material cover on the CNTs. Secondly, the gener- ation of a high density of structural defects and the lower resistance contact to the topside CNT emitters after treatment are all helpful to improving the field emission properties of the treated CNTs.     

Influence of growth time on field emission properties from carbon nanotubes deposited on arrayed nanoporous silicon pillars

We investigated the influence of growth time on field emission properties of multi-walled carbon nanotubes deposited on silicon nanoporous pillar array (MWCNTs/Si-NPA), which were fabricated by thermal chemical vapour deposition at 800 °C for 5, 15 and 25 min respectively, to better understand the origins of good field emission properties. The results showed that the MWCNTs/Si-NPA grown for 15 min had the highest field emission efficiency of the three types of samples. Morphologies of the products were examined by field-emission scanning electron microscope, and the excellent field emission performance was attributed not only to the formation of a nest array of multi-walled carbon nanotubes, which would largely reduce the electrostatic shielding among the emitters and resulted in a great enhancement factor, but also to the medium MWCNTs density films, there was an ideal compromise between the emitter density and the intertube distance, which also could effectively avoid electrostatic shielding effects, along with a high emitter density.     

沉积工艺参数对碳纳米管薄膜场发射性能的影响

利用微波等离子体化学气相沉积(MWPCVD)方法,在不锈钢衬底上直接沉积碳纳米管膜。通过SEM、拉曼光谱和XRD表征,讨论了制备温度和甲烷浓度对碳纳米管膜场发射的影响。结果表明:不同条件下制备的碳纳米管膜的场发射性能有很大差异,保持氢气的流量(100sccm)、生长时间(10min)、反应室压力不变,当甲烷流量为8sccm、温度为700~800℃时,场发射性能最好,开启场强仅为0.8V/μm,发射点分布密集、均匀。     

Effects of microwave plasma treatment on the field emission properties of printed carbon nanotubes/Ag nano-particles films

The effects of Ar microwave plasma treatment on field emission properties of the printed carbon nanotubes (CNTs) cathode films using Ag nano-particles as binder were investigated. The field emission J-E characteristics were measured at varied plasma treatment time. Significant improvement in emission current density, emission stability and uniformity were achieved for the Ar treated CNTs films, even though the plasma treatment increased the turn on electric field slightly. High-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy revealed the microstructural changes of CNTs after the plasma treatment. The improved field emission properties of CNTs film can be attributed to the generation of a high density of structural defects after treatment, which increased greatly the possible emission active sites. Besides, the formation of the sharpened and open-ended CNTs tips is all helpful for improving the field emission properties of the treated CNTs.     

N离子注入对金刚石膜场发射特性的影响

不同剂量的N离子被注入到化学气相沉积金刚石膜内，研究了表面结构及场发射特性的变化.Raman谱和x射线光电子能谱分析表明，N离子的注入破坏了金刚石膜表面原有的sp3结构，并在膜内形成大量的sp2 C—C 和sp2 C—N 键.样品的场发射测试显示N离子的注入显著提高了金刚石膜场发射特性，膜的场发射阈值电场从注入前的18 V/μm下降到注入后的4 V/μm.金刚石膜场发射特性的提高归因于N离子注入后膜内sp2 C键含量的增加和体内缺陷带的形成，这些变化能改变膜的表面功函数，提高Feimi能级，降低电子隧穿表面的能量势垒. 关键词： 场致电子发射 N离子注入 金刚石膜 热丝化学气相沉积     

Microtopography and field emission properties of carbon films grown in a microwave gas discharge plasma

Graphite-like carbon films are grown in an ethanol vapor plasma in a microwave gas discharge. The electrical parameters controlling the microtopography and electronic properties of carbon films are determined. It is shown that electron bombardment affects the fine structure of graphite-like nanocrystallites and their emissive power with characteristics close to those of carbon nanotubes. The emission properties of layered graphite-like films can be improved by metal (cadmium) impurity doping. For nanocrystalline graphite-like films, emission currents with a density of 0.3 A/cm² are induced at an electric field strength of less than 7 V/μ m in the gap. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 2, 2004, pp. 367–371. Original Russian Text Copyright ? 2004 by Suzdal’tsev, Yafarov.     

Efficient field emission from coiled carbon nano/microfiber on copper substrate by dc-PECVD

Crystalline coiled carbon nano/micro fibers in thin film form have been synthesized via direct current plasma enhanced chemical vapor deposition (PECVD) on copper substrates with acetylene as a carbon precursor at 10 mbar pressure and 750 °C substrate temperature. The as-prepared samples were characterized by X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). XRD pattern as well as selected area electron diffraction (SAED) pattern showed that the samples were crystalline in nature. SEM and HRTEM studies showed that as synthesized coiled carbon fibers are having average diameter ∼100 nm and are several micrometers in length. The as-prepared samples showed moderately good electron field emission properties with a turn-on field as low as 1.96 V/μm for an inter-electrode distance 220 μm. The variation of field emission properties with inter-electrode distance has been studied in detail. The field emission properties of the coiled carbon fibrous thin films are compared with that of crystalline multiwalled carbon nanotubes and other carbon nanostructures.     

Carbon nanofibers and multiwalled carbon nanotubes from camphor and their field electron emission

Vertically aligned carbon nanofibers (CNF) and multiwalled carbon nanotubes (MWCN) have been synthesized from camphor by catalytic thermal CVD method on Co and Co/Fe thin films (for CNF) and on silicon substrates using a mixture of camphor and ferrocene (for MWCN). CNF and MWCN are studied by field emission scanning electron microscopy, high-resolution transmission electron microscopy, visible Raman spectroscopy, X-ray diffraction in order to get insight into the microstructure and morphology of these materials. Field electron emission study indicates turn-on field of about 2.56, 3.0 and 6.5 V/μm for MWCN, Co/CNF and Co/Fe/CNF films, respectively. The best performance of MWCN in field electron emission among the materials studied can be due to the highest aspect ratio, good graphitization and good density.     

Rehybridization of the atomic orbitals and the field electron emission from nanostructured carbon

The field electron emission, structural features, and electronic properties of carbon films obtained by chemical vapor deposition were experimentally studied. It is shown that the field electron emission from the films composed of spatially oriented carbon nanotubes and platelike graphite nanocrystals is observed for the electric field strength lower by one to two orders of magnitude as compared to the values characteristic of the metal emitters. Experimental data reported for the first time are indicative of a local decrease in the electron work function in such carbon film materials as compared to that in graphite. A model of the emission center is proposed and a mechanism of the field electron emission from nanostructured carbon is described.