Field emission characteristics of carbon nanotubes post-treated with high-density Ar plasma

The field emission characteristics of carbon nanotubes (CNTs) grown by thermal chemical vapor deposition (CVD) and subsequently surface treated by high-density Ar plasma in an inductively coupled plasma reactive ion etching (ICP-RIE) with the various plasma powers were measured. Results indicate that, after treated by Ar plasma with power between 250 and 500 W, the emission current density of the CNTs is enhanced by nearly two orders of magnitude (increased from 0.65 to 48 mA/cm²) as compared to that of the as-grown ones. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were employed to investigate the structural features relevant to the modified field emission properties of CNTs. The SEM images of CNTs subjected to a 500 W Ar plasma treatment exhibit obvious damages to the CNTs. Nevertheless, the turn-on fields decreased from 3.6 to 2.2 V/μm, indicating a remarkable field emission enhancement. Our results further suggest that the primary effect of Ar plasma treatment might be to modify the geometrical structures of the local emission region in CNTs. In any case, the Ar plasma treatment appears to be an efficient method to enhance the site density for electron emission and, hence markedly improving the electric characteristics of the CNTs.     

A novel approach to improve the field emission characteristics of printed CNT films

A novel post-treatment method, including hard hairbrush and electrical treatment, is performed intentionally to improve the field emission capability and stability of screen-printed carbon nanotubes （CNTs）. Compared with untreated films, the field emission properties of the treated ones are greatly enhanced. Scanning electron microscopy （SEM） and Raman spectrum studies reveal that field emission properties are enhanced by two factors. Firstly, the improved field emission properties of CNT films can be attributed to the more active CNT surface by removing the organic material cover on the CNTs. Secondly, the gener- ation of a high density of structural defects and the lower resistance contact to the topside CNT emitters after treatment are all helpful to improving the field emission properties of the treated CNTs.     

Enhancement of field emission properties of graphite flakes by producing carbon nanotubes on above using thermal chemical vapor deposition

In order to improve the field emission properties of the graphite flakes, the carbon nanotubes (CNTs) are produced on above without the metallic catalyst using mixtures of C₂H₂ and H₂ gases by thermal chemical vapor deposition. We spin the graphite solution on the silicon wafer and dry it, then synthesize the CNTs on the graphite flakes. We change the synthetic time to obtain the optimal conditions for enhancement of field emission properties of graphite flakes. The experimental results show that the density and quality of the CNTs could be controlled significantly by the synthetic time. Besides, the field emission properties of the treated graphite flakes are also affected greatly by it. The emission current density of the treated graphite flakes reaches to 0.5 mA/cm² at 3 V/μm, and the turn-on field is decreased from 7.7 to 1.9 V/μm after producing the CNTs on above.     

Improved emission stability of HfC-coated carbon nanotubes field emitters

Plasma-enhanced chemical vapor deposition (PECVD) method was employed to synthesize the Fe-catalyzed carbon nanotubes (CNTs). Hf films were deposited onto the synthesized CNTs, followed by heat treatment at 1200 °C which could form HfC. Field emission properties indicate that the HfC-coated CNTs have good emission current density due to low work function of HfC and also keep stable emission characteristics under poor vacuum owing to the chemical inertness of HfC. Consequently, field emission characteristics of the CNTs can be improved by the HfC-coated surface treatment compared with the synthesized CNTs.     

Effect of ion impinging on the microstructure and field emission of carbon nanotubes

Effects of ion impinging on the microstructure and field electron emission properties of screen-printed carbon nanotube films were investigated. We observed that the plasma treatment modified the microstructure of CNTs along with the remarkable increase of emission site density. With the prolongation of ion impinging time, the emission current falls down first, and then rises up to higher than that of the untreated films. It is proposed that the change of emission characteristics is due to the different emission mechanisms. After the treatment, electrons are emitted predominantly from the nano-nodes on the tube wall instead from the nanotube tips.     

激光烧蚀对碳纳米管薄膜场发射性能的影响

采用丝网印刷工艺制作了碳纳米管(CNTs)薄膜阴极.经适当能量激光烧蚀后,相互粘连的CNTs随表面粘附有机物的蒸发而分散开,管间隙增加、屏蔽效应减小,使得场发射性能大幅度提高,开启场强降低、场倍增因子β增大.Raman光谱分析表明,随激光能量增加,CNTs表面缺陷增多,成为新的场发射点,对其β增大的贡献加强.相对于两电极结构,三电极中平栅极结构场发射性能经激光烧蚀有更显著的改善.这说明激光烧蚀是提高CNTs场发射性能的有效方法. 关键词： 碳纳米管薄膜 场发射 激光烧蚀 Raman光谱     

Improve the field emission uniformity of carbon nanotubes treated by ball-milling process

Carbon nanotubes (CNTs) deposited by chemical vapor deposition (CVD) were treated by ball milling. The morphologies and field emission properties of the treated CNTs depending on milling time were studied. The emission turn-on field is increased, and the field emission current density is reduced, when the milling time increased from 0.5 to 3 h. The as-deposited long CNTs were cut to short CNTs (∼1 h) and micro-particles (>1 h) with increasing of the milling time. It is found that the optimized milling time is 0.5-1 h, the treated CNTs showed excellent field emission properties, such as low turn-on field, high emission current density and uniform luminescence spots distribution.     

Preparation and field emission properties of carbon nanotubes cold cathode using melting Ag nano-particles as binder

A new preparation process for carbon nanotubes (CNTs) cold cathode was studied through the replacement of traditional organic or inorganic binder with Ag nano-particles. This method has the advantages of low preparation temperature and fine electrical contact between CNTs paste and substrate. A mixture paste of CNTs, Ag nano-particles and other organic solvents was spreaded on Si substrate. By melting and connecting of Ag nano-particles after sintered 30 min at 250 °C, a flat CNTs films with good field emission properties was obtained. The measurements reveal that the turn on electric field and the threshold electric field of as-prepared CNTs cathode are 2.1 and 3.9 V/μm respectively and the field emission current density is up to 41 mA/cm² at an applied electric field of 4.7 V/μm.     

The influence of H2 plasma treatment on the field emission of amorphous GaN film

The influence of H₂ plasma treatment on the field emission properties of amorphous GaN (a-GaN) films is studied. It is found that the treatment makes little change to the surface morphology. The current density of the treated film decreases from 400 to 30 μA/cm² at the applied field of about 30 V/μm. The treatment can reduce the defects in a-GaN films, and therefore the treatment results in the weakening of the tunneling emission of the a-GaN film at the high field region. The treatment also seems to change the conduction mechanism of the a-GaN film.     

Improved emission uniformity and stability of printed carbon nanotubes in electrolyte

In this paper, we studied the effect of NaCl electrolyte as a surface treatment on improving the uniformity and stability of field emission of screen-printed carbon nanotubes (CNTs). A short period of the electrolyte treatment of CNT films remarkably increase emission uniformity and stability. Furthermore, the field emission characteristics of screen-printed carbon nanotubes (CNTs) such as low turn-on field, high emission current density and strong adhesion of the CNT film on the substrate were also reinforced after post-treated. SEM, TEM and Raman spectrum study revealed that uniformity and stability of field emission is enhanced by two factors. Firstly, the electrolyte treatment appeared to render the CNT surfaces more actively by exposing more CNTs form the CNT paste, which dominates initial uniformity and stability of field emission. Secondly, the number of opened CNTs and defects CNTs of CNT film were increased by electrical current energy.     

Growth of carbon nanotubes on stainless steel substrates by DC-PECVD

We report on the fabrication of carbon nanotubes (CNTs) on Ni-coated stainless steel (SUS) substrates by using dc plasma enhanced chemical vapor deposition. The synthesized CNTs have the diameter of about 30 nm and the length of about 1.2 μm. To verify the effects of SUS substrates on the growth of CNTs, CNTs had also been grown on Ni-coated Si substrates. CNTs grown on the SUS substrates were more uniform compared with those grown on the Si substrates. Field emission properties of the CNT films were measured in the diode configuration, and the turn-on electric field of 3.87 V/μm and field enhancement factor β of about 1737 were obtained from the synthesized CNTs at the gap of 500 μm between the SUS substrate and the anode. These results have not only clarified the effects of the substrate on the growth of CNTs, but also shown the potential of CNTs in field emission applications, especially CNT-based cold-cathode X-ray tubes.     

Field emission properties of polymer-converted carbon films by heat treatment

Carbon films were prepared on single crystal silicon substrates by heat-treatment of a polymer-poly(phenylcarbyne) at 800 °C in Ar atmosphere. The heat-treatment caused the change of the polymer into carbon film, which exhibited good field emission properties. Low turn-on emission field of 4.3 V/μm (at 0.1 μA/cm²) and high emission current density of 250 μA/cm² (at 10 V/μm) were observed for the polymer-converted carbon films. This behavior was demonstrated to be mainly related to the microstructure of the carbon films, which consisted of fine carbon nanoparticles with high sp² bonding. The carbon films, which can be deposited simply with large areas, are promising for practical applications in field emission display.     

Characterization and field emission characteristics of carbon nanotubes modified by titanium carbide

Carbon nanotubes (CNTs) were modified by depositing a thin layer of titanium film on the surface using magnetron sputtering method, followed by vacuum annealing at 900 °C for 2 h. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) confirmed that the as-deposited thin titanium film reacted with carbon atoms to form titanium carbide after annealing. The experiment results show that the thickness of sputter-deposited titanium film has significant effect on the field emission J-E characteristic of modified CNTs film. The titanium carbide-modified CNTs film obtained by controlling the titanium sputtering time to 2 min showed an improved field emission characteristics with a significant reduction in the turn-on electric field and an obvious increase in the emission current density as well as an improvement in emission stability. The improvement of field emission characteristics achieved is attributed to the low work function and good resistance to ion bombardment of titanium carbide.     

Field emission characteristics of screen-printed carbon nanotubes cold cathode by hydrogen plasma treatment

Selective plasma etching and hydrogen plasma treatment were introduced in turn to improve field emission characteristics of screen-printed carbon nanotubes (CNTs) cold cathode, which was prepared by using slurry of mixture of multi-wall CNTs, organic vehicles and inorganic binder, i.e. silicon dioxide sol. The results show that selective plasma etching process could effectively remove parts of surface inorganic vehicle (SiO₂) layer and expose more smooth and clean CNTs on cathode surface, which could significantly decrease the operating field of CNTs cathode. There are some nanoparticles emerging on the out of CNTs wall after hydrogen plasma treatment, which are equivalent to increase field emission point of cathode. At the same time, these nanoparticles can increase the local electric field of CNTs, which can decrease operating voltage of CNTs cathode and improve uniformity field emission.     

Field electron emission improvement of ZnO nanorod arrays after Ar plasma treatment

Vertically well-aligned single crystal ZnO nanorod arrays were synthesized and enhanced field electron emission was achieved after radio-frequency (rf) Ar plasma treatment. With Ar plasma treatment for 30 min, flat tops of the as-grown ZnO nanorods have been etched into sharp tips without damaging ZnO nanorod geometrical morphologies and crystallinity. After the Ar ion bombardment, the emission current density increases from 2 to 20 μA cm⁻² at 9.0 V μm⁻¹ with a decrease in turn-on voltage from 7.1 to 4.8 V μm⁻¹ at a current density of 1 μA cm⁻², which demonstrates that the field emission of the as-grown ZnO nanorods has been efficiently enhanced. The scanning electron microscopy (SEM) results, in conjunction with the results of transmission electron microscopy (TEM), Raman spectroscopy and photoluminescence observation, are used to investigate the mechanisms of the field emission enhancement. It is believed that the enhancements can be mainly attributed to the sharpening of rod tops, and the decrease of electrostatic screening effect.     

Enhanced field emission properties of screen-printed doubled-walled carbon nanotubes by polydimethylsiloxane elastomer

Field emission (FE) properties of double-walled carbon nanotubes (DWCNTs) treated by polydimethylsiloxane (PDMS) elastomer with different heating temperature have been systematically studied. The current density of treated DWCNT films decreases with the increase of heating temperature. The screen-printed DWCNTs treated by PDMS elastomer with drying temperature 150 °C for 20 min have the best FE performance with a marvelous field enhancement factor (β = 20194). The optimized FE performance is attributed to the morphological change of DWCNT films after PDMS elastomer treatment and the change of separation energy for the CNT-substrate interface. It is proved that the PDMS treatment is a facile and effective method for field emission display (FED) application, especially for low-temperature FED preparation.     

Effect of sputtered Cu film’s diffusion barrier on the growth and field emission properties of carbon nanotubes by chemical vapor deposition

Growth of carbon nanotube (CNT) films with good field emission properties on glass is very important for low cost field emission display (FED) applications. In addition to Ni, Co and Fe, Cu can be a good catalyst for CNT growth on glass, but due to diffusion into SiO₂ it is difficult to control the CNTs density and uniformity. In this paper, four metal barrier layers (W, Ni, Cr, Ti) were deposited by dc magnetron sputtering on glass to reduce the Cu diffusion. As-grown CNT films showed various morphologies with the use of different barrier metals. CNTs with uniform distribution and better crystallinity can be synthesized only on Ti/Cu and W/Cu. Voltage current measurements indicate that better field emission properties of CNT films can be obtained on titanium and tungsten barriered Cu, while chromium and nickel are not suitable barrier candidates for copper in CNT-FED applications because of the reduced emission performance. PACS 81.05.Uw; 61.46.Fg; 85.45.Db; 66.30.-h     

A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2

As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, UV-vis spectroscopy, and electrical measurements. The results have shown that post-deposition treatments modify the crystalline structure, the morphology, and the optoelectronic properties of Sb₂S₃ thin films. X-ray diffraction studies showed that the crystallinity of the films was improved in both cases. Atomic force microscopy studies showed that the change in the film morphology depends on the post-deposition treatment used. Optical emission spectroscopy (OES) analysis revealed the plasma etching on the surface of the film, this fact was corroborated by the energy dispersive X-ray spectroscopy analysis. The optical band gap of the films (E_g) decreased after post-deposition treatments (from 2.36 to 1.75 eV) due to the improvement in the grain sizes. The electrical resistivity of the Sb₂S₃ thin films decreased from 10⁸ to 10⁶ Ω-cm after plasma treatments.     

Field emission from a-GaN films deposited on Si (100)

Amorphous gallium nitride (a-GaN) films have been deposited on Si (100) substrates using ion-assisted deposition. The deposited films were characterised by X-ray diffraction (XRD) and atomic force microscopy (AFM). XRD confirms the amorphous nature of the films and AFM showed nanostructures in the films. The field electron emission from the film was obtained in a probe-hole field emission microscope, and the current-voltage (I-V) characteristics were studied. The corresponding Fowler-Nordheim (F-N) plots showed a linear behaviour. A current density of 0.1 A/cm² has been obtained for 1.2 V/μm electric field. The field emission current-time (I-t), curves were recorded at a current level of 500 nA for 3 h. The field emission behaviour is compared with that of crystalline GaN as reported in literature.     

Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering

Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) films have been deposited on glass by rf-sputtering from an ITO target, using Ar plasma and N₂ plasma, respectively, and different rf-power. Optical emission spectroscopy (OES) was employed to identify the species present in the plasma and to correlate them with the properties of the ITO and ITON thin films. Emission lines of ionic In could only be detected in N₂ plasma, whereas in the Ar plasma additional lines corresponding to atomic In and InO, were detected. The deposition rate of thin films was correlated with the In species, rather than the nitrogen species, emission intensity in the plasma. The higher resistivity and lower carrier concentration of the ITON films, as compared to the respective properties of the ITO films, were attributed to the incorporation of nitrogen, instead of oxygen, in the ITON structure.