Magnetic field effect on transitions between direct and indirect excitons in diluted magnetic semiconductor double quantum wells

Transitions between direct and indirect excitons with change of magnetic field in double quantum well heterostructure Cd_1−xMg_xTe/Cd_1−yMg_yTe/Cd_1−xMg_xTe/Cd_1−zMn_zTe/Cd_1−xMg_xTe in external magnetic field are studied. The structure contains diluted magnetic semiconductor (Cd,Mn)Te layer that forms magnetic quantum well with the depth depending on the magnetic field intensity. Above some magnetic field the indirect exciton becomes the lowest excited state of the system. The indirect exciton lifetime exceeds by several orders of magnitude of the direct exciton one. The range of quantum well widths for which the indirect exciton is the exciton lowest state was estimated for the proposed system.     

High-Density Excitons in a Diluted Magnetic Semiconductor: Cd 1 − x Mn x Te

Time-resolved magneto photoluminescence in a diluted magnetic semiconductor Cd 0.9 Mn 0.1 Te has been carried out with varying exciton density from 10 14 to 10 19 cm m 3 . The reduction of the Zeeman shift and that of the magnetic polaron energy was found under strong photoexcitation. The spectral feature is interpreted in terms of the heating of the manganese spin subsystem. Polarization dependence of the spin heating is observed for the first time, revealing the contribution of the spin flip between excitons and magnetic ions to the heating process.     

Photomaganetization in diluted magnetic semiconductors

Starting from a many–body Hamiltonian for a system of photogenerated electrons and holes, spin-split by magnetic ions in diluted magnetic semiconductors, we derive, presumably for the first time, an expression for the photomagnetization as a function of the photon power, frequency, excitonic interaction and the magnetic ion concentration. Damping of nonequilibrium carriers and spin excitons is considered phenomenologically. Our results agree qualitatively with some of the systematics of the photomagnetization observed in Hg _1?x Mn _x Te.     

Localization of exciton excitation in planar structures Cd0.9Mn0.1Te/Cd0.7Mg0.3Te

The spectra of exciton emission in a series of periodic structures with ultrathin Cd_0.9Mn_0.1Te inclusions in the Cd_0.7Mg_0.3Te matrix have been studied. The complex structure of the luminescence spectra and their relation to the luminescence excitation spectra indicate large-scale fluctuations in thickness of narrow-band-gap layers. Two types of temperature dependences of the luminescence intensity of localized excitons are found: (1) the complete suppression of emission above 80 K and (2) the relative enhancement of temperature-insensitive low-energy band that corresponds to local bulges in planar Cd_0.9Mn_0.1Te layers.     

Interwell exciton relaxation in semimagnetic asymmetric double quantum wells

The possibility of magnetic field control of the spectral and polarization characteristics of exciton recombination is examined in Cd(Mg, Mn) Te-based asymmetric double quantum wells. At low fields, the exciton transition in a semimagnetic well is higher in energy than that in a nonmagnetic well and the interwell exciton relaxation is fast. In contrast, when the energy order of the exciton transitions reverses at high fields, unexpectedly slow relaxation of σ⁻ polarized excitons from the nonmagnetic well to the σ⁺-polarized ground state in the semimagnetic well is observed. Strong dependence of the total circular polarization degree on the heavy-light hole splitting Δ _hh-lh in the nonmagnetic well is found and attributed to the spin dependent interwell tunneling controlled by exciton spin relaxation. Such a slowing down of the relaxation allows separation of oppositely spin-polarized excitons in adjacent wells. The text was submitted by the authors in English.     

Excitonic magnetic polaron dynamics of MBE grown CdTe/Cd1 − xMnxTe,Cd1 − xMnxTe/Cd1 − vMgyTe single quantum wells in magneti fields

Excitonic lifetimes in Cd_1 − xMn_Ue2Te, Cd_1 − xMg_xTe epilayers and CdTe/Cd_1 − xMn_xTe, Cd_1 − xMn_xTe/Cd_1 − vMg_yTe single quantum wells with different well widths and Mn, Mg compositions are investigated. The excitonic lifetimes are found to reduce drastically by applying external magnetic fields to samples with giant Zeeman splittings. The observed phenomenon is interpreted in terms of the PL decay time contribution from the long-life dark excitons which can convert to excitons for recombinations by a spin-flip process. We attribute the lifetime reduction to the depletion of dark excitons due to their crossing over the exciton energies for dipole allowed transitions in magnetic fields.     

Anisotropic exchange interaction in CdTe/Cd0.75Mn0.25Te quantum wires

We observed anisotropic large peak-energy shift of photoluminescence (PL) from CdTe/Cd_0.75Mn_0.25Te quantum wires (QWRs). The large PL-peak-energy shift is caused by the exchange interaction between excitons in the non-magnetic QWR and Mn ions in the DMS barrier. The exchange interaction is enhanced when magnetic field is perpendicular to the QWR.     

Exciton Spectroscopy of Semiconductors by the Method of Optical Harmonics Generation (Review)

Nonlinear optical phenomena are widely used for the study of semiconductor materials. The paper presents an overview of experimental and theoretical studies of excitons by the method of optical second and third harmonics generation in various bulk semiconductors (GaAs, CdTe, ZnSe, ZnO, Cu₂O, (Cd,Mn)Te, EuTe, EuSe), and low-dimensional heterostructures ZnSe/BeTe. Particular attention is paid to the role of external electric and magnetic fields that modify the exciton states and induce new mechanisms of optical harmonics generation. Microscopic mechanisms of harmonics generation based on the Stark effect, the spin and orbital Zeeman effects, and on the magneto-Stark effect specific for excitons moving in an external magnetic field are considered. This approach makes it possible to study the properties of excitons and to obtain new information on their energy and spin structure that is not available when the excitons are investigated by linear optical spectroscopy. As a result of these studies, a large amount of information was obtained, which allows us to conclude on the establishing of a new field of research—exciton spectroscopy by the method of optical harmonics generation.     

ZnS中Te等电子中心的时间分辨光谱研究

用时间分辨光谱研究了很大的Te组分范围内的ZnS_1-xTe_x（x=00 05—085）合金的发光动力学特性，结果表明：不同形态的Te等电子中心具有不同的辐射复 合寿命，从几个ns到几十个ns的范围内变化，当x＝015左右时，寿命达到最大值（约 40ns）.其物理机理源于不同的Te等电子中心具有不同的局域化特性.当Te组分较小时，等 电子中心从Te₁逐渐演变到Te₂，Te₃或Te₄ 时，相应发光寿命增加，表现出不断增强 的激子发光局域化特性；而当Te组分较大时，Te原子团变得较大，其局域势与基体原子势的 相互作用增强，等电子中心的局域化特性减弱，而基体价带扩展态特征变得明显起来，相应 发光寿命逐渐减小.还研究了激子束缚能随Te组分的变化以及发光强度随温度的变化关系， 所得结果进一步支持了时间分辨光谱研究所得到的结论. 关键词： ZnS 等电子中心 时间分辨光谱 局域态     

Stimulated emission of free excitons in Cd1−xMnxTe under nonresonant two-photon excitation

We report on free excitons coexisting with exciton magnetic polarons (EMPs) in bulk semimagnetic semiconductors of Cd_1−xMn_xTe for 0.04?x?0.36 at 2 K under nonresonant two-photon excitation. This two-photon excitation not only generates free excitons but also more efficiently creates EMPs compared with ordinary one-photon excitation. Stimulated emission from free excitons is demonstrated under strong two-photon excitation.     

Exciton and intracenter radiative recombination in ZnMnTe and CdMnTe quantum wells with optically active manganese ions

The emission spectra of Zn_1?x Mn _x Te/Zn_0.6Mg_0.4Te and Cd_1?x Mn _x Te/Cd_0.5Mg_0.5Te quantum-well structures with different manganese concentrations and quantum-well widths are studied at excitation power densities ranging from 10⁵ to 10⁷ W cm^?2. Under strong optical pumping, intracenter luminescence of Mn²⁺ ions degrades as a result of the interaction of excited managanese ions with high-density excitons. This process is accompanied by a strong broadening of the emission band of quantum-well excitons due to the exciton-exciton interaction and saturation of the exciton ground state. Under pumping at a power density of 10⁵ W cm^?2, stimulated emission of quantum-well excitons arises in CdTe/Cd_0.5Mg_0.5Te. The luminescence kinetics of the quantum-well and barrier excitons is investigated with a high temporal resolution. The effect of the quantum-well width and the managanese concentration on the kinetics and band shape of the Mn²⁺ intracenter luminescence characterized by the contribution of the manganese interface ions is determined.     

Effects of concentration on magnetization in a diluted magnetic semiconductor quantum dot

The donor bound spin polaron in a Cd_1?xMn_xTe quantum dot is investigated theoretically. Spin polaronic shifts are estimated using a mean field theory. Magnetization is calculated for various concentrations of Mn²⁺ ions with the dot sizes. The lowest binding energies in a diluted magnetic semiconductor of a Cd_1?xMn_xTe quantum dot are also estimated. Using the effective mass approximation, calculations are presented with and without spatial dependent effective masses. It is found that (i) the lowest binding energy decreases with the dot radius (ii) position dependent mass gives larger binding energy for smaller dots (iii) the ionization energy becomes more when spin interaction energy is included (iv) variation of increase in ionization energy is sharper for smaller dots with increase in concentration and (v) the magnetization of Mn subsystem increases when concentration of Mn²⁺ ions increases and it has appreciable changes for smaller dots.     

GaP(N,Te,Zn)的静压光致荧光研究

对GaP(N,Te,Zn)样品做了77K的静压光致荧光研究。得到了N,NN₁,NN₃束缚激子能级的压力系数,以及施主Te和中性施主Te的束缚激子能级的压力系数。讨论了这些能级随压力的变化行为,并首次观察到Gap中自由激子的零声子发射。 关键词：     

Optically induced magnetization in diluted magnetic quantum dots

We report the effect of intense laser field on donor impurities in a semimagnetic Cd_1-xinMn_xinTe/Cd_1-xoutMn_xoutTe quantum dot. The spin polaronic energy of different Mn²⁺ is evaluated for different dot radii using a mean field theory in the presence of laser field. Magnetization is calculated for various concentrations of Mn²⁺ ions with different dot sizes. Significant magnetization of Mn spins can be obtained through the formation of polarized exciton magnetic polarons (EMPs). A rapid decrease of the laser dressed donor ionization energy for different values of dot sizes with increasing field intensity is predicted. Also, it is found that the polarization of EMPs increases rapidly at higher excitation energies.     

Luminescence of CdMgTe with CdMnTe ultrathin nanolayers

The luminescence spectra of Cd_0.75Mn_0.25Te/Cd_{1 ? y} Mg _y Te superlattices with narrow-band-gap Cd_0.75Mn_0.25Te nanolayers having nominal thicknesses of 0.5, 1.5, and 3.0 monolayers (MLs) exhibit exciton emission bands of Cd_{1 ? y} Mg _y Te barriers and nanolayers, as well as intracenter luminescence of Mn²⁺ ions. For all samples, the luminescence spectra of Cd_0.75Mn_0.25Te nanolayers consist of two bands. From analyzing the dependences of the luminescence intensity on the nanolayer thickness and temperature, these bands are assigned to excitons localized at two-and zero-dimensional potentials. The intracenter emission of Mn²⁺ in 3.0-ML-thick Cd_0.75Mn_0.25Te clearly reveals excitation migration.     

Photo-induced magnetic polarons in semiconductors

Exciton magnetic polarons observed in dilute magnetic semiconductors were investigated by steady-state and pico-second time-resolved photoluminescence measurements and have shown characteristic behavior of exciton localization processes in bulk-Cd_1-x Mn _x Te and also in the quantum structures composed of the dilute magnetic semiconductors. For the quantum structures spin-dependent coherent polarizations associated with excitons and biexcitons were studied by degenerate four-wave mixing experiment. Also investigated for different chalcogenide spinel ferromagnetic semiconductors was photo-induced enhancement of exchange interaction between magnetic ions by direct magnetic flux detection in the vicinity of the Curie temperatures.     

Magnetische untersuchungen an mischkristallen der quasibinären legierungssysteme (Cd Te)1-x (Mn Te)x und (Sn Te)1-x (Mn Te)x

The magnetic susceptibility and magnetization are presented for polycrystalline samples of the alloy systems Cd_1-xMn_xTe 0 < x 0.1 and Sn_1-xMn_xTe 0 < 4 0.4. The magnetic measurements were performed between 2.3 K and 300 K in external magnetic fields up to 11 kOe. At sufficiently high temperatures the susceptibility can be described by a Curie-Weiss law. In the system Sn_1-xMn_xTe θ_p is positive. A linear dependence θ_p ∞ x was found with θ_p(0.4) = 49 K. In the series Cd_1-xMn_xTe θ_p changes sign. For θ < x < 0.04 θ_p is positive with a maximum θ_p ≈ 10 K at x = 0.02. In the region x #62; 0.04 θ_p becomes negative with θ_p = -35 K at x = 0.1. The effective spin value of manganese is S_eff #62; 5/2 for all the samples. The investigation was done to check the assumption that ferromagnetic coupling may exist in tellurides of manganese if the shortest distance d_MnMn is greater than 3.4 Å. This hypothesis has been stated. In the case θ_p #62; 0 the results are partly explained by the RKKY exchange coupling.     

NiP:Mn as a potential magnetic contacting material to Cd1−xMnxTe

Injection of spin-polarized current into spintronic devices is a challenge to the semiconductor physicists and technologists. II-VI compound semiconductors can act as the spin aligner on the top of GaAs light emitting diode. However, II-VI compound semiconductor like Cd_1−xMn_xTe is still suffering from contacting problem. Application of electroless deposited magnetic NiP:Mn contact would enhance efficient current injection into Cd_1−xMn_xTe than the standard gold contact. A technique for electroless deposition of NiP:Mn on Cd_1−xMn_xTe have been described here. The electronic and magnetic properties of the contact material NiP:Mn and the contact performance of NiP:Mn relative to evaporated gold have been evaluated. The contact fulfills the requirements of resistivity and ferromagnetism for application to Cd_1−xMn_xTe.     

A direct measurement of g-factors in II–VI and III–V core–shell nanocrystals

This study describes a direct measurement of spectroscopic g-factors of photo-generated carriers in InP/ZnS and HgTe/Hg_xCd_1−xTe(S) core–shell nanocrystals. The g-factor of trapped electrons and their spin-lattice versus radiative relaxation ratio (T₁/τ) were measured by the use of continuous-wave and time-resolved optically detected magnetic resonance (ODMR) spectroscopy. The g-factors of excitons and donor–hole pairs were derived by the use of field-induced circular-polarized photoluminescence (CP-PL) spectroscopy. The combined information enabled to determine the g-factors of the individual band-edge electrons and holes. The results suggested an increase of the g-factor of the exciton and conduction electron with a decrease of the nanocrystal size.     

Influence of nonequilibrium phonons on exciton luminescence in CdTe/CdMnTe quantum wells

The luminescence method has been employed for the first time to detect nonequilibrium phonons in CdTe quantum wells with Cd_0.6Mn_0.4Te barriers. The method makes use of the giant Zeeman splitting of exciton states in CdTe/(Cd,Mn)Te quantum wells and is promising for application in high-sensitivity subterahertz phonon spectrometry. The method can also be useful in revealing the spin-phonon coupling mechanisms in diluted magnetic semiconductors. Fiz. Tverd. Tela (St. Petersburg) 40, 816–819 (May 1998)