Characterization of two-emitter WOLED with no additional blocking layer

In this paper, white organic light emitting diodes (WOLEDs) utilizing two primary-color emitters with no additional blocking layer are fabricated. With a structure of ITO/2TNATA (20 nm)/NPB (20 nm)/NPB: rubrene (2%) (10 nm)/ADN (30 nm)/Alq₃ (20 nm)/LiF (1 nm)/Al (100 nm), a white light with CIE coordinates of (0.344, 0.372) is generated at a current density of 30 mA/cm² and the electroluminescence (EL) spectra consist of two broad bands around 456 nm (ADN) and 556 nm (NPB:rubrene). The device shows the low turn-on voltage and bright white emission with a power efficiency of 2.3 lm/W at a luminance of 100 cd/m². Through control of the location of the recombination zone and energy transfer, a stable white light emission is achieved. The maximum color shift is less than 0.02 units on the 1931 CIE x,y chromaticity diagram. Given the spectral power distribution of WOLED, the parameters of a light source (chromaticity coordinate, CCT, CRI, and the luminous efficacy) can be calculated. A MATLAB program for this purpose is developed in this paper. Based on this, the design of WOLED for an illumination and display system using a white emitter with color filter arrays is discussed.     

White organic electroluminescent device with photovoltaic performances

Organic device with structure of indium tin oxide (ITO)/1,3,5-tris-(3-methylphenylphenylamino)triphenylamine (m-MTDATA)/2-tert-butyl-9,10-di-beta-naphthylanthracene (TBADN)/2,9-dimethyl-4,7-diphenyl-1,10-phenan-throline (BCP)/LiF/Al, was fabricated, which show high efficient white electroluminescence (EL) or photovoltaic (PV) properties when it was driven by direct current (DC) bias or illuminated by ultraviolet (UV) light. Under a DC bias, the device shows efficient white EL emission. A maximum luminous efficiency of 1.1 lm/W was obtained at 8 V, which corresponds the Commission International de L’Eclairage coordinates (CIE) of (x = 0.298, y = 0.365). When the bias was increased to 12 V, the device shows bright white emission with the maximum brightness of 4300 cd/m², corresponding CIE coordinates of (x = 0.262, y = 0.280). When the diode was irradiated by a 365 nm UV-light (4 mW/cm²), the open-circuit voltage (V_oc) of 1.2 V, short-circuit (I_sc) of 0.065 mA/cm², fill factor (FF) of 0.24 and power conversion efficiency of 0.47% have been determined, respectively. The generation mechanisms of white light and PV of the bi-functional diode were discussed as well.     

New double graded structure for enhanced performance in white organic light emitting diode

This study presents a new design that uses a combination of a graded hole transport layer (GH) structure and a gradually doped emissive layer (GE) structure as a double graded (DG) structure to improve the electrical and optical performance of white organic light-emitting diodes (WOLEDs). The proposed structure is ITO/m-MTDATA (15 nm)/NPB (15 nm)/NPB: 25% BAlq (15 nm)/NPB: 50% BAlq (15 nm)/BAlq: 0.5% Rubrene (10 nm)/BAlq: 1% Rubrene (10 nm)/BAlq: 1.5% Rubrene (10 nm)/Alq₃ (20 nm)/LiF (0.5 nm)/Al (200 nm). (m-MTDATA: 4,4′,4″ -tris(3-methylphenylphenylamino)triphenylamine; NPB: N,N′-diphenyl-N,N′-bis(1-naphthyl-phenyl)-(1,1′-biphenyl)-4,4′-diamine; BAlq: aluminum (III) bis(2-methyl-8-quinolinato) 4-phenylphenolate; Rubrene: 5,6,11,12-tetraphenylnaphthacene; Alq₃: tris-(8-hydroxyquinoline) aluminum). By using this structure, the best performance of the WOLED is obtained at a luminous efficiency at 11.8 cd/A and the turn-on voltage of 100 cd/m² at 4.6 V. The DG structure can eliminate the discrete interface, and degrade surplus holes, the electron-hole pairs are efficiently injected and balanced recombination in the emissive layer, thus the spectra are unchanged under various drive currents and quenching effects can be significantly suppressed. Those advantages can enhance efficiency and are immune to drive current density variations.     

Efficient white organic light-emitting devices using 4,7-diphenyl-1,10-phenanthroline as block layer

A white light-emitting device has been fabricated with a structure of ITO/m-MTDATA (45 nm)/NPB (10 nm)/DPVBi (8 nm)/DPVBi:DCJTB 0.5% (15 nm)/BPhen (x nm)/Alq₃ [(55−x) nm]/LiF (1 nm)/Al, with x=0, 4, and 7. BPhen was used as the hole-blocking layer. This results in a mixture of lights from DPVBi molecules (blue-light) and DCJTB (yellow-light) molecules, producing white light emission. The chromaticity can be readily adjusted by only varying the thickness of the BPhen layer. The CIE coordinates of the device are largely insensitive to the driving voltages. When the thickness of BPhen is 7 nm, the device exhibits peak efficiency of 6.87 cd/A (3.59 lm/W) at the applied voltage of 6 V, the maximum external quantum efficiency η_ext=2.07% corresponding to 6.18 cd/A, and the maximum brightness is 18494 cd/m² at 15 V.     

White organic light emitting diodes based on DCM dye sandwiched in 2-methyl-8-hydroxyquinolinolatolithium

Stable white electroluminescence (EL) has been achieved from organic LED, in which an ultrathin 4-(dicyanomethylene)-2-methyl-6-(p-dimethyl-aminostyryl)-4H-pyran (DCM) dye layer has been inserted in between two 2-methyl-8-hydroxyquinolinolatolithium [LiMeq] emitter layer and by optimizing the position of the DCM dye layer from the α-NPD/LiMeq interface. Electroluminescence spectra, current-voltage-luminescence (I-V-L) characteristics of the devices have been studied by changing the position of the dye layer. As the distance of DCM layer from α-NPD/LiMeq interface is increased, the intensity of host emission enhances rapidly. Introduction of thin layer of DCM in emissive layer increases the turn on voltage. The best Commission International de L’ Eclairage (CIE) coordinates i.e. (0.32, 0.33) were obtained with device structure ITO/α-NPD(30 nm) /LiMeq(10 nm)/DCM(1 nm)/LiMeq(25 nm)/BCP(6 nm)/Alq₃(28 nm)/LiF(1 nm)/Al(100 nm). The EL spectrum covers the whole visible spectra range 400-700 nm. The color rendering index (CRI) for our best white light (Device 4) is 47.4. The device shows very good color stability in terms of CIE coordinates with voltages. The maximum luminescence 1240 cd/m⁻² has been achieved at 19 V.     

Bright electrophosphorescent devices based on sterically hindered spacer-containing Cu(I) complex

A Cu(I) complex, [Cu(Dppp)(DPEphos)]BF₄ (Dppp=2,3-diphenyl-pyrazino[2,3-f][1,10]phenanthroline, DPEphos=Bis[2-(diphenylphosphino)phenyl]ether), is synthesized and used as the dopant in bright electrophosphorescent devices with the general structure ITO/m-MTDATA (30 nm)/NPB (20 nm)/CBP: ×wt% [Cu(Dppp)(DPEphos)]BF₄ (30 nm)/Bphen (20 nm)/Alq₃ (20 nm)/LiF (0.8 nm)/ Al (200 nm). These devices exhibit a maximum brightness of 4483 cd/m² and a peak efficiency of 3.4 cd/A. Compared with previously reported similar devices based on Cu(I) complexes, the brightness of the devices presented in this article is the best. Meanwhile, 2% [Cu(Dppp)(DPEphos)]BF₄-based devices exhibit white light-emitting properties with CIE coordinates of (0.32. 0.35) at 10 V.     

High efficiency small molecule white organic light-emitting devices with a multilayer structure

In this paper, a new white organic light-emitting device (WOLED) with multilayer structure has been fabricated. The structure of devices is ITO/N, N-bis-(1-naphthyl)-N, N^′-diphenyl-1, 1′-biphenyl-4, 4′-diamine (NPB) (40 nm)/NPB: QAD (1%): DCJTB (1%) (10 nm) /DPVBi (10 nm) /2, 9-dimethyl, 4, 7-diphenyl, 1, 10-phenanthroline (BCP) (d nm)/tris-(8-hydroxyquinoline) aluminium (Alq₃)(50-d nm)/LiF (1 nm)/Al (200 nm). In our devices, a red dye 4-(dicyanomethylene)-2-t-butyl-6 (1, 1, 7, 7-tetramethyl julolidyl-9-enyl)-4H-pyran (DCJTB) and a green dye quinacridone (QAD) were co-doped into NPB. The device with 8 nm BCP shows maximum luminance of 12 852 cd/m² at 20 V. The current efficiency and power efficiency reach 9.37 cd/A at 9 V and 3.60 lm/W at 8 V, respectively. The thickness of the blocking layer permit the tuning of the device spectrum to achieve a balanced white emission with Commission International de’Eclairage (CIE) chromaticity coordinates of (0.33,0.33). The CIE coordinates of device change from (0.3278, 0.3043) at 5 V to (0.3251, 0.2967) at 20 V that are well in the white region, which is largely insensitive to the applied bias.     

White organic electroluminescence from fluorescent bis (2-(2-hydroxyphenyl) benzoxazolate)zinc doped with phosphorescent material

Efficient white electroluminescence has been obtained by using an electroluminescent layer comprising of a blue fluorescent bis (2-(2-hydroxyphenyl) benzoxazolate)zinc [Zn(hpb)₂] doped with red phosphorescent bis (2-(2′-benzothienyl) pyridinato-N,C^3′)iridium(acetylacetonate) [Ir(btp)₂acac] molecules. The color coordinates of the white emission spectrum was controlled by optimizing the concentration of red dopant in the blue fluorescent emissive layer. Organic light-emitting diodes were fabricated in the configuration ITO/α-NPD/Zn(hpb)₂:0.01 wt%Ir(btp)₂acac/BCP/Alq₃/LiF/Al. The J-V-L characteristic of the device shows a turn on voltage of 5 V. The electroluminescence (EL) spectra of the device cover a wide range of visible region of the electromagnetic spectrum with three peaks around 450, 485 and 610 nm. A maximum white luminance of 3500 cd/m² with CIE coordinates of (x, y=0.34, 0.27) at 15 V has been achieved. The maximum current efficiency and power efficiency of the device was 5.2 cd/A and 1.43 lm/W respectively at 11.5 V.     

新型高色纯度弱电流猝灭性蓝色有机发光器件

以ADN为基质,分别以不同掺杂剂制备了四种蓝色有机发光器件,器件结构为:CuPc(12 nm)/NPB(40 nm)/AND∶Dopant(50 nm)/Alq(12 nm)/LiF(4 nm)/Al。掺杂剂有:BCzVB(amino-substituted distyrylarylenederivatives)、TBPe、BCzVBi和DSA-ph四种。研究了最佳掺杂浓度以及器件的亮度、电流密度、效率和色坐标等电学特性和光学特性。其中掺杂BCzVB制备了色纯度高、低电流猝灭性的蓝色有机发光器件,色坐标达到x=0.146,y=0.162,最大亮度为11600 cd/m2(15 V),电流效率为2.8 cd/A,流明效率为1.79 lm/W;以ADN为基质,分别以TBPe、BCzVBi和DSA-ph为掺杂剂,制备了另外三种对比器件。器件ADN∶TBPe色坐标为x=0.162,y=0.222(蓝绿光),效率随电流的增加而降低很快;器件ADN∶BczVBi有较好的色纯度(色坐标:x=0.164,y=0.146),但电流效率较低:2.03 cd/A,效率随电流的增加降低幅度也较快。器件ADN∶DSA-ph效率较高为8 cd/A,效率随电流增加变化幅度不大,但色纯度比较差(x=0.153,y=0.306),适合于做白色有机发光器件。     

White organic light-emitting diodes based on benzothiazole derivative

This paper describes the white organic light-emitting diodes (WOLEDs) made from a benzothiazole derivative, N-(4-(benzo[d]thiazol-2-yl)phenyl)-N-phenylnaphthalen-1-amine (BPNA). The bright yellowish-white emission was obtained from a non-doped triple-layer device: ITO/NPB (40 nm)/BPNA (50 nm)/Alq₃ (40 nm)/LiF/Al. The Commission Internationale de L’Eclairage (CIE) coordinates of the device were (0.24, 0.36) at 10 V. The maximum brightness of the device was 9225 cd/m² at 14.4 V. A current efficiency of 3.08 cd/A, a power efficiency of 1.21 lm/W and an external quantum efficiency of 1.18% at a driving current density of 20 mA/cm² were achieved. WOLED with a DCJTB-doped structure of ITO/TcTa/BPNA/BPNA: DCJTB (0.5%)/BPNA/BCP/Alq₃/LiF/Al was fabricated in comparison with the non-doped device. The device emitted bright white light with the CIE coordinates of (0.33, 0.29) at 10 V and a maximum luminance of 7723 cd/m² at 14.8 V.     

利用BCP层调节白色磷光有机电致发光器件色度的研究

制备了三种结构的白色有机电致发光器件，通过比较得出：在发光层中间插入2，9-二甲基-4，7-二苯基-1，10-菲咯啉(BCP)能有效控制载流子在不同发光层的分布，进而对器件色度进行调节；而掺杂磷光染料Ir(ppy)₃作敏化剂能有效提高器件的效率. 结构为:氧化铟锡/聚乙烯基咔唑∶N，N′-二(1-萘基)-N，N′-二苯基-1，1′-联苯-4-4′-二胺(30nm)/二-(2-甲基-8-羟基喹啉)-4-联苯酚铝：3.0 wt%2，5，8，11-tetra-tertbutylperylene(TBPe)(30nm)/BCP(5.0nm)/4,4N,N二咔唑基二苯：5.0 wt%Ir(ppy)₃:2.0 wt%红荧烯(15nm)/BCP(10nm)/Mg:Ag的器件色度和效率俱佳. 其在17V工作电压下具有的亮度为4670cd/m²，对应色坐标为(0.31,0.37). 器件具有的最大外量子效率为1.4%，当驱动电压从5.0V升高到17V，器件色坐标严格位于白光色域区内. 关键词： 磷光染料 阻挡层 白光 双发光层     

Highly efficient greenish blue-emitting organic diodes based on pyrene derivatives

We report the synthesis of pyrene derivatives as the light emissive layer for highly efficient organic electroluminescence (EL) diodes. Multilayer devices were fabricated with pyrene derivatives (ITO/NPB (50 nm)/blue material (30 nm)/BCP (10 nm)/Alq₃ (30 nm)/LiF (1 nm)/Al). By using 1,1′-dipyrene (DP) and 1,4-dipyrenyl benzene (DPB), the devices produced the blue EL emissions with 1931 Commission International de L’Eclairage coordinates of (x=0.21, y=0.35) and (x=0.19, y=0.25), respectively. The device with DPB shows a maximum brightness of 42,445 cd/m² at 400 mA/cm² and the luminance efficiency of 8.57 cd/A and 5.18 lm/W at 20 mA/cm².     

Efficient red organic light-emitting diode sensitized by a phosphorescent Ir compound

The efficiencies of red organic light-emitting diode (OLED) using tris-(8-hydroxy-quinoline)aluminum (Alq₃) as host and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as dopant were greatly increased by adding a small amount (0.3 wt%) of Ir compound, iridium(III) bis(3-(2-benzothiazolyl)-7-(diethylamino)-2H-1-benzopyran-2-onato-N′,C⁴) (acetyl acetonate) (Ir(C6)₂(acac)), as a sensitizer. The device has a sandwiched structure of indium tin oxide (ITO)/4,4′,4″-tris(N-(2-naphthyl)-N-phenyl-amino)triphenylamine (T-NATA) (40 nm)/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′ diamine (NPB) (40 nm)/Alq₃:DCJTB (0.7 wt%):Ir(C6)₂(acac) (0.3 wt%) (40 nm)/Alq₃ (40 nm)/LiF (1 nm)/Al (120 nm). It can be seen that the current efficiencies of this device remained almost (13.8±1) cd/A from 0.1 to 20,000 cd/m² and the Commission International d’Eclairage (CIE) coordinates at (0.60, 0.37) in the range of wide brightness. The significant improvement was attributed to the sensitization effect of the doped Ir(C6)₂(acac), thus the energy of singlet and triplet excitons is simultaneously transferred to the DCJTB.     

Effects of hole injection layer thickness on the luminescent properties of white organic light-emitting diodes

This work investigates how the thickness of the hole injection layer (HIL) influences the luminescent characteristics of white organic light-emitting diodes (WOLED). Experimental results indicate that inserting a thin HIL (<200 Å) into a WOLED without an HIL reduces the brightness and clearly changes the chromaticity because the surface of the 4,4′,4″-tris{N,-(3-methylphenyl)-N-phenylamino}-triphenylamine) (m-MTDATA) film is extremely rough. In contrast, a dense film structure and the fine surface morphology of m-MTDATA of moderate thickness (350-650 Å) provides a uniform conducting path on which holes cross the indium tin oxide (ITO)/HIL interface, improving luminescent performance, associated with the relatively stable purity of the color of the emission, with Commission Internationale 1′Eclairage (CIE) coordinates of (x = 0.40, y = 0.40). However, inserting a thick HIL (>650 Å) reduces the luminescent performance and causes red-shift, because the holes and electrons in the effective emissive confinement region become less optimally balanced. Moreover, optimizing the device structure enables a bright WOLED with CIE coordinates of (x = 0.34, y = 0.33) to reach a luminance of 7685 cd/m² at a current density of 100 mA/cm², with a maximum luminous efficiency of 1.72 lm/W at 5.5 V.     

Ca/Ag bilayer cathode for transparent white organic light-emitting devices

We have demonstrated that the compositional modification of the Ca/Ag films is principally responsible for a high transmittance (over 70% in the visible range) and low sheet resistance (10-12 Ω/sq). X-ray photoelectron spectroscopy (XPS) sputter depth profiling of Ca/Ag structure reveals the presence of Ca(OH)₂ and Ca metal. A chemical model of the Ca/Ag cathode is proposed. Using transparent ITO anode and Ca (10 nm)/Ag (10 nm) cathode, efficient white organic light-emitting devices (WOLEDs) emitting from both sides have been fabricated. Brightness of 3813 cd/m² and Commission Internationale de l’Eclairage (CIE) coordinates (0.36, 0.34) at 10 V through ITO anode and values of 1216 cd/m² and (0.33, 0.30) through Ca/Ag cathode are reported. A low turn-on voltage of 5.5 V is measured.     

荧光染料掺杂的高效率、高亮度白色有机电致发光器件

制备了结构为 ITO/NPB（30 nm）/Rubrene（0.2 nm）/CBP：Bczvbi（8 nm,x%）/Bphen（30 nm）/Cs₂CO₃：Ag₂O（2 nm,20%）/Al（100 nm）的器件。研究了Bczvbi掺杂浓度（x=5,10,15）对白光器件性能的影响。综合利用发光层中主客体之间的能量转移和空穴阻挡层的空穴阻挡特性,得到了高效率、高亮度的白色有机电致发光器件。当Bczvbi的掺杂质量分数为10%时,器件的效率和亮度都为最大。驱动电压为7 V时,最大电流效率为4.61 cd/A;驱动电压为9 V时,最大亮度为21 240 cd/m²。当驱动电压从4 V增加到9 V时,色坐标从（0.36,0.38）变化为（0.27,0.29）,均处于白光区域。     

High-efficiency Simple Structure White Organic Light-emitting Devices Based on Rubrene Ultrathin Layer

White organic light-emitting devices (WOLEDs) were fabricated with an ultrathin layer of rubrene inserted between NPB and TPBI. With a simple three-layer structure of ITO/NPB(50 nm)/rubrene(0.1 nm)/TPBI(50 nm)/LiF/Al, a white light with CIE coordinates of (0.31, 0.30) were generated. The device gave a maximum luminance efficiency of 2.04 lm/W at 5 V. Furthermore, with a multilayer structure of ITO/m-MTDATA(30 nm)/NPB(20 nm)/rubrene(0.1 nm)/TPBI(40 nm)/Alq₃(10 nm)/LiF/Al, the device reached a maximum luminance efficiency of 4.29 lm/W at 4 V and the luminance could exceed 10 000 cd/m² at 10 V.     

Blue organic light-emitting diodes with low driving voltage and maximum enhanced power efficiency based on buffer layer MoO3

Blue organic light-emitting devices based on wide bandgap host material, 2-(t-butyl)-9, 10-di-(2-naphthyl) anthracene (TBADN), blue fluorescent styrylamine dopant, p-bis(p-N,N-diphenyl-amino-styryl)benzene (DSA-Ph) have been realized by using molybdenum oxide (MoO₃) as a buffer layer and 4,7-diphenyl-1,10-phenanthroline (BPhen) as the ETL. The typical device structure used was glass substrate/ITO/MoO₃ (5 nm)/NPB (30 nm)/[TBADN: DSA-Ph (3 wt%)](35 nm)/BPhen (12 nm)/LiF (0.8 nm)/Al (100 nm). It was found that the MoO₃∥BPhen-based device shows the lowest driving voltage and highest power efficiency among the referenced devices. At the current density of 20 mA/cm², its driving voltage and power efficiency are 5.4 V and 4.7 Lm/W, respectively, which is independently reduced 46%, and improved 74% compared with those the m-MTDATA∥Alq₃ is based on, respectively. The J-V curves of ‘hole-only’ devices reveal that a small hole injection barrier between MoO₃∥NPB leads to a strong hole injection, resulting low driving voltage and high power efficiency. The results strongly indicate that carrier injection ability and balance shows a key significance in OLED performance.     

双量子阱结构OLED效率和电流的磁效应

通过结构为ITO/NPB(60 nm)/ Alq₃ ∶1 wt% rubrene(20 nm)/ Alq₃(3 nm)/ Alq₃ ∶1 wt% rubrene(20 nm)/ Alq₃(20 nm)/LiF/Al的双量子阱的黄色有机电致发光器件,研究了不同磁场强度下的发光效率和电流变化特性. 研究结果表明该器件的电流是随着磁场强度的增加而单调下降的,显示了器件的电阻是随着磁场强度的增加而增加的. 同时也得到了该结构有 关键词： 量子阱 磁场 OLED 磁效应     

White light-emitting diodes using blue and yellow-orange-emitting phosphors

A blue-emitting phosphor, BaMgAl₁₀O₁₇:Eu²⁺ (BAM) and a yellow-orange phosphor, Ba²⁺-codoped Sr₃SiO₅:Eu²⁺ were prepared by the solid-state reaction. Excitation and emission spectra results showed that BAM and Ba²⁺-codoped Sr₃SiO₅:Eu²⁺ can be efficiently excited by near-ultraviolet (n-UV)-visible light from 250 to 440 nm. The effects of the doped-Eu²⁺ concentration in BAM and Ba²⁺-codoped Sr₃SiO₅:Eu²⁺ on the photoluminescence were investigated in detail. White light-emitting diodes (LED) was obtained by combining n-UV LED chip (GaN-based 380 nm emitting) with BaMgAl₁₀O₁₇:0.09Eu²⁺ and 0.1Ba²⁺-codoped Sr₃SiO₅: 0.2Eu²⁺ phosphors with the characteristic of color-rendering index of 86, CIE chromaticity coordinates (x,y) of (0.3216,0.3096), and color temperature T_c of 5700 K. As the current increases, the relative intensity simultaneously increases. The CIE chromaticity coordinates (x,y) of the white LED tends to decrease. The correlated color temperature T_c increases from 4100 to 7500 K and the color-rendering index R_a increases from 82 to 87 simultaneously.