High-voltage SOI lateral MOSFET with a dual vertical field plate

A new silicon-on-insulator(SOI)power lateral MOSFET with a dual vertical field plate(VFP)in the oxide trench is proposed.The dual VFP modulates the distribution of the electric field in the drift region,which enhances the internal field of the drift region and increases the drift doping concentration of the drift region,resulting in remarkable improvements in breakdown voltage(BV)and specific on-resistance(Ron,sp).The mechanism of the VFP is analyzed and the characteristics of BV and Ron,spare discussed.It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V,and the Ron,sp decreases from 366 m·cm2to 110 m·cm2.     

Field plate structural optimization for enhancing the power gain of GaN-based HEMTs

A novel source-connected field plate structure, featuring the same photolithography mask as the gate electrode, is proposed as an improvement over the conventional field plate (FP) techniques to enhance the frequency performance in GaN-based HEMTs. The influences of the field plate on frequency and breakdown performance are investigated simultaneously by using a two-dimensional physics-based simulation. Compared with the conventional T-gate structures with a field plate length of 1.2 μm, this field plate structure can induce the small signal power gain at 10 GHz to increase by 5-9.5 dB, which depends on the distance between source FP and dramatically shortened gate FP. This technique minimizes the parasitic capacitances, especially the gate-to-drain capacitance, showing a substantial potential for millimeter-wave, high power applications.     

Novel high-voltage self-adaptive power device based on interface charge＊

This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor （LDMOS） with self- adaptive interface charge （SAC） layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer （EI） and increase breakdown voltage （BV）. The BV and EI of SAC LDMOS increase to 612 V and 600 V/tim from 204 V and 90.7 V/ttm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of r/which present the enhanced ability of interface charge on EI are defined and analysed.     

Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer

A novel low specific on-resistance （Ron,sp） lateral double-diffused metal oxide semiconductor （LDMOS） with a buried improved super-junction （BISJ） layer is proposed. A super-junction layer is buried in the drift region and the P pillar is split into two parts with different doping concentrations. Firstly, the buried super-junction layer causes the multiple-direction assisted depletion effect. The drift region doping concentration of the BISJ LDMOS is therefore much higher than that of the conventional LDMOS. Secondly, the buried super-junction layer provides a bulk low on-resistance path. Both of them reduce Ron,sp greatly. Thirdly, the electric field modulation effect of the new electric field peak introduced by the step doped P pillar improves the breakdown voltage （BV）. The BISJ LDMOS exhibits a BV of 300 V and Ron,sp of 8.08 mΩ·cm2 which increases BV by 35% and reduces Ron,sp by 60% compared with those of a conventional LDMOS with a drift length of 15 μm, respectively.     

Partial-SOI high voltage laterally double-diffused MOS with a partially buried n~+-layer

A novel partial silicon-on-insulator laterally double-diffused metal-oxide-semiconductor transistor （PSOI LDMOS） with a thin buried oxide layer is proposed in this paper. The key structure feature of the device is an n＋-layer, which is partially buried on the bottom interface of the top silicon layer （PBNL PSOI LDMOS）. The undepleted interface n＋-layer leads to plenty of positive charges accumulated on the interface, which will modulate the distributions of the lateral and vertical electric fields for the device, resulting in a high breakdown voltage （BV）. With the same thickness values of the top silicon layer （10 p.m） and buried oxide layer （0.375 μm）, the BV of the PBNL PSOI LDMOS increases to 432 V from 285 V of the conventional PSOI LDMOS, which is improved by 51.6%.     

Non-recessed-gate quasi-E-mode double heterojunction AIGaN/GaN high electron mobility transistor with high breakdown voltage

A non-recessed-gate quasi-E-mode double heterojunction A1GaN/GaN high electron mobility transistor （quasi-E- DHEMT） with a thin barrier, high breakdown voltage and good performance of drain induced barrier lowering （DIBL） was presented. Due to the metal organic chemical vapor deposition （MOCVD） grown 9-nm undoped A1GaN barrier, the effect that the gate metal depleted the two-dimensiomal electron gas （2DEG） was greatly impressed. Therefore, the density of carriers in the channel was nearly zero. Hence, the threshold voltage was above 0 V. Quasi-E-DHEMT with 4.1%tm source-to-drain distance, 2.6-μm gate-to-drain distance, and 0.5-μm gate length showed a drain current of 260 mA/mm. The threshold voltage of this device was 0.165 V when the drain voltage was 10 V and the DIBL was 5.26 mV/V. The quasi-E-DHEMT drain leakage current at a drain voltage of 146 V and a gate voltage of -6 V was below 1 mA/mm. This indicated that the hard breakdown voltage was more than 146 V.     

A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain

In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor (LBJT) with a base field plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3×1017 cm-3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT (VBJT) with comparable breakdown voltage (3357 V) shows that the minimum base width of 0.25 μm and base doping as high as 8×1017 cm-3 contribute to a maximum current gain of only 128.     

Effects of Transverse Field on Internal Energy and Specific Heat of a Molecular-Based Materials

The molecular-based magnetic materials AFe11 Fe111（C2O4）3 have a honeycomb structure in which FeII （S = 2） and FeIH （S= 5/2） occupy sites alternately. They can be described as mixed spin-2 and spin-5/2 Ising model with ferrimagnetic interlayer coupling. The influences of the transverse field on the internal energy and the specific heat of the molecalar-based magnetic system have been studied numerically by using the effective-field theory with self-spin correlations and the differential operator technique.     

Microwave propagation with the gas breakdown

By combining the microwave propagation theory and the gas breakdown theory, the microwave propagation with the gas breakdown is analyzed theoretically. Particle-in-cell/Monte Carlo collision （PIC/MCC） simulations are carried out to verify the theoretical results. Based on this theoretical method, the breakdown phenomenon of the pulse microwave is analyzed. The results show that the product values of the initial electron density and the propagation length are the criterion to distinguish the pulse peak decline breakdown and the pulse width reduction breakdown. Furthermore, the energy transmission is also studied, which shows that the total output energy is approximately independent of the input electric field if the electric field is not extremely large.     

Analysis and experimental concepts of the vibrating wire alignment technique

The vibrating wire alignment technique is a method which, by measuring the spatial distribution of a magnetic field, can achieve very high alignment accuracy. The vibrating wire alignment technique can be applied to fiducializing magnets and the alignment of accelerator straight section components, and it is a necessary supplement to conventional alignment methods. This article gives a systematic summary of the vibrating wire alignment technique, including vibrating wire model analysis, system frequency calculation, wire sag calculation, and the relation between wire amplitude and magnetic induction intensity. On the basis of this analysis, this article outlines two existing alignment methods, one based on magnetic field measurement and the other on amplitude and phase measurements. Finally, some basic experimental issues are discussed.     

Influence of temperature on strain-induced polarization Coulomb field scattering in AIN/GaN heterostructure field-effect transistors

Electron mobility scattering mechanism in AlN/GaN heterostuctures is investigated by temperature-dependent Hall measurement, and it is found that longitudinal optical phonon scattering dominates electron mobility near room temperature while the interface roughness scattering becomes the dominant carrier scattering mechanism at low temperatures （~ 100 K）. Based on measured current-voltage characteristics of prepared rectangular AlN/GaN heterostructure field-effect transistor under different temperatures, the temperature-dependent variation of electron mobility under different gate biases is inves- tigated. The polarization Coulomb field （PCF） scattering is found to become an important carrier scattering mechanism after device processing under different temperatures. Moreover, it is found that the PCF scattering is not generated from the thermal stresses, but from the piezoelectric contribution induced by the electrical field in the thin A1N barrier layer. This is attributed to the large lattice mismatch between the extreme thinner AlN barrier layer and GaN, giving rise to a stronger converse piezoelectric effect.     

Phase field crystal study of the crystallization modes within the two-phase region

Using the phase field crystal approach, the crystallization process within the liquid–solid coexistence region is investigated for a square lattice on an atomic scale. Two competing growth modes, i.e., the diffusion-controlled growth through long-range atomic migration in liquid and the diffusionless growth through local atom rearrangement, which give rise to two completely different crystallization behaviors, are compared. In the diffusion-controlled regime, the interface migrates in a layerwise manner, leading to a gradual change of crystal morphology from truncated square to four-fold symmetric dendrite with the increase of driving force. For the diffusionless growth mode, a single crystal with no significant density change occupies the whole system at a faster rate while exhibiting a small growth anisotropy. The competition between these two modes is also discussed from the key input of the phase field crystal model: the correlation function.     

Hadronic light-by-light scattering contribution to the muon g－2

We review recent developments concerning the hadronic light-by-light scattering contribution to the anomalous magnetic moment of the muon. We first discuss why fully off-shell hadronic form factors should be used for the evaluation of this contribution to the g- 2. We then reevaluate the numerically dominant pion-exchange contribution in the framework of large-No QCD, using an off-shell pion-photon-photon form factor which fulfills all QCD short-distance constraints, in particular, a new short-distance constraint on the off-shell form factor at the external vertex in g- 2, which relates the form factor to the quark condensate magnetic susceptibility in QCD. Combined with available evaluations of the other contributions to hadronic light-by-light scattering this leads to the new result αμ^LbyL;had= （116±40） × 10^-11, with a conservative error estimate in view of the many still unsolved problems. Some potential ways for further improvements are briefly discussed as well. For the electron we obtain the new estimate αe^LbyL;had= （3.9± 1.3） × 10^-14.     

High frequency behaviours and Mossbauer study of field annealed FeCuNbSiB alloy ribbons

This paper investigates the high frequency behaviours and magnetic anisotropy of rapidly solidified FINEMET （Fe73.5Si13.sBgNb3Cul） alloy ribbons annealed in an applied magnetic field. It finds that the ribbons annealed with the applied magnetic field show much higher resonance frequencies and have even higher permeability at higher frequencies than the samples annealed without the magnetic field and the non-annealed ribbons. MSssbauer spectroscopy had been employed to study the spatial distribution of the magnetic moments of five selected FINEMET alloy ribbons in different heat-treated conditions. The results show that an easy plane has been established after annealling in the magnetic field, while for the other ribbons this effect is not significant. Hence, the relationship between magnetic field annealing and high frequency property has been bridged by the bianisotropic theory.     

Shear Viscosity of Hot QED at Finite Chemical Potential from Kubo Formula

Within the framework of finite temperature field theory this paper discusses the shear viscosity of hot QED plasma through Kubo formula at one-loop skeleton diagram level with a finite chemical potential. The effective widths （damping rates） are introduced to regulate the pinch singularities and then gives a reliable estimation of the shear viscous coefficient. The finite chemical potential contributes positively compared to the pure temperature case. The result agrees with that from the kinetics theory qualitatively.     

Effective Action for Noncommutative U（1） Gauge Theory with Higher Dimensional Terms

In this paper we apply the assumption of our recent work in noncommutative scalar models to the noncommutative U（1） gauge theories. This assumption is that the noneommutative effects start to be visible continuously from a scale ANC and that below this scale the theory is a commutative one. Based on this assumption and using background field method and loop calculations, an effective action is derived for noncommutative U（1） gauge theory. It will be shown that the corresponding low energy effective theory is asymptotically free and that under this condition the noncommutative quadratic IR divergences will not appear. The effective theory contains higher dimensional terms, which become more important at high energies. These terms predict an elastic photon-photon scattering due to the noncommutativity of space. The coefficients of these higher dimensional terms also satisfy a positivity constraint indicating that in this theory the related diseases of superluminal signal propagating and bad analytic properties of S-matrix do not exist. In the last section, we will apply our method to the noncommutative extra dimension theories.     

Theoretical Study on N = 126 Shell Evolution

The nuclei around magic number N = 126 are investigated in the deformed relativistic mean field （RMF） model with effective interactions TMA. We focus investigations on the N = 126 isotonic chain. The N = 126 shell evolution is studied by analyzing the variations of two-neutron （proton） separation energies, quadruple deformations, single particle levels etc. The good agreement of two-neutron separation energies between experimental data and calculated values is reached. The RMF theory predicts that the sizes of N = 126 shell become smaller and smaller with the increasing of proton number Z. However, the N = 126 shell exists in our calculated region all along. According to the calculated two-proton separation energies, the RMF theory suggests ^220Pu is a two-proton drip-line nucleus in the N = 126 isotonic chain.     

Study on the effects of chromaticity and magnetic field tracking errors at CSNS/RCS

The Rapid Cycling Synchrotron （RCS） is a key component of the China Spallation Neutron Source （CSNS）. For this type of high intensity proton synchrotron, the chromaticity, space charge effects, and magnetic field tracking errors between the quadrupoles and the dipoles can induce beta function distortion and tune shift, and induce resonances. In this paper, the combined effects of chromaticity, magnetic field tracking errors and space charge on beam dynamics at CSNS/RCS are studied systemically. 3-D simulations with different magnetic field tracking errors are performed by using the code ORBIT, and the simulation results are compared with the case without tracking errors.     

Theoretical research on electron beam modulation in a field-emission cold cathode electron gun

In order to develop miniaturized and integrated electron vacuum devices, the electron beam modulation in a field- emission （FE） electron gun based on carbon nanotubes is researched. By feeding a high-frequency field between the cathode and the anode, the steady FE electron beam can be modulated in the electron gun. The optimal structure of the electron gun is discovered using 3D electromagnetism simulation software, and the FE electron gun is simulated by PIC simulation software. The results show that a broadband （74-114 GHz） modulation can be achieved by the electron gun with a rhombus channel, and the modulation amplitude of the beam current increases with the increases in the input power and the electrostatic field.     

Electric field modulation technique for high-voltage AIGaN/GaN Schottky barrier diodes

A novel structure of AIGaN/GaN Schottky barrier diode （SBD） featuring electric field optimization techniques of anode-connected-field-plate （AFP） and magnesium-doped p-type buried layer under the two-dimensional electron gas （2DEG） channel is proposed. In comparison with conventional A1GaN/GaN SBDs, the magnesium-doped p-type buried layer in the proposed structure can provide holes that can help to deplete the surface 2DEG. As a result, surface field strength around the electrode edges is significantly suppressed and the electric field along the channel is distributed more evenly. Through 2D numerical analysis, the AFP parameters （field plate length, LAFP, and field plate height, TAFP） and p-type buried layer parameters （p-type layer concentration, Np, and p-type layer thickness, Tp） are optimized to achieve a three-equal-peak surface channel field distribution under exact charge balance conditions. A novel structure with a total drift region length of 10.5 μm and a magnesium-doped p-type concentration of 1 × 10^17 cm 3 achieves a high breakdown voltage （VB） of 1.8 kV, showing 5 times improvement compared with the conventional SBD with the same device dimension.