Realization of a broadband terahertz wavelength-selective coupling based on five-core fibers

We propose a novel kind of wavelength-selective coupling for the terahertz range based on solid five-core fiber(FCF).The performances of coupling, propagation characteristics, and confinement loss properties are numerically investigated by using a full vector beam propagation method(BPM). Simulation results show that it is possible to realize a broadband wavelength-selective coupling. The coupling length can reach 1.913 cm, and the confinement loss is better than1.965×10-4cm-1. Furthermore, a parameter, the power difference, is defined, and it numerically demonstrates the working performance of the wavelength-selective coupler; that is, when the power difference is better than-15 dB, the frequency located in the range of 0.76 THz–1.00 THz is separated relatively well from the frequency of 0.3 THz. Finally, the effect of the structural parameter on the working performance of the coupler is also investigated. We show that the performance optimization is possible by appropriately tuning the core diameter, and the tunabilities of frequency and bandwidth are possible by appropriately tuning the pitch. The wavelength-selective coupler is of potential application for optical fiber sensing and communication in terahertz wavelength division multiplexer fields.     

Electrically tunable resonant terahertz transmission in subwavelength hole arrays

An actively enhanced resonant transmission in a plasmonic array of subwavelength holes is demonstrated by use of terahertz time-domain spectroscopy. By connecting this two-dimensional element into an electrical circuit, tunable resonance enhancement is observed in arrays made from good and relatively poor metals. The tunable feature is attributed to the nonlinear electric response of the periodic hole array film, which is confirmed by its voltage–current behavior. This finding could lead to a unique route to active plasmonic devices, such as tunable filters, spatial modulators, and integrated terahertz optoelectronic components.     

0.14 THz双环超材料慢波结构表面波振荡器数值研究

本文研究了一种太赫兹波段双环超材料慢波结构, 并具有同轴引出结构的相对论过模表面波振荡器. 设计了超材料同轴过模慢波结构; 通过色散特性, 进行了模式选择和过模结构电子束电参数和几何参数的设计; 根据超材料同轴慢波结构的特点, 设计了具有同轴引出结构的末端同轴输出段. 粒子模拟结果表明, 在电子束电压为600 kV和电流为1.0 kA, 引导磁场为2.0 T 时, 同轴超材料慢波结构过模表面波振荡器输出稳定单频的0.141 THz电磁波, 峰值功率为316.8 MW.     

0.34 THz大功率过模表面波振荡器研究

论文对0.34 THz大功率过模表面波振荡器进行了模拟设计和初步实验研究. 针对高过模比(D/λ ≈ 6.8)慢波结构, 根据小信号理论选择了合适的慢波结构尺寸和电子束距壁距离, 实现了器件在表面波TM₀₁模的π点附近谐振. 根据PIC模拟结果, 表面波振荡器可以实现频率和功率分别为0.34 THz和22.8 MW的太赫兹波输出. 采用微细电火花加工技术完成了不锈钢慢波结构的一体化精细加工, 并基于小型化脉冲功率驱动源搭建了实验装置. 初步的实验结果表明, 在电子束电压和电流分别约为420 kV和3.1 kA时, 0.34 THz大功率过模表面波振荡器输出脉冲的频率范围为0.319–0.349 THz, 辐射功率不小于250 kW, 脉宽约为2 ns. 最后分析讨论了实验输出功率与模拟结果相差较大的原因, 为表面波振荡器的性能改善奠定了基础.     

Intraband Dynamics and Terahertz Emission in Biased GaAs/In0.53Ga0.47As Semiconductor Superlattices

Using an excitonic basis, we investigate the intraband polarization, optical absorption spectra, and terahertz emission of semiconductor superlattice with the density matrix theory. The excitonic Bloch oscillation is driven by the dc and ac electric fields. The slow variation in the intraband polarization depends on the ac electric field frequency. The intraband polarization increases when the ac electric field frequency is below the Bloch frequency. When the ac electric field frequency is above the Bloch frequency, the intraband polarization downwards and its intensity decreases. The satellite structures in the optical absorption spectra are presented. Due to excitonic dynamic localization, the emission lines of terahertz shift in different ac electric field and dc electric field.     

The effect of an optical pump on the absorption coefficient of magnesium-doped near-stoichiometric lithium niobate in terahertz range

The absorption coefficient of magnesium-doped near-stoichiometric lithium niobate crystal is measured by terahertz time-domain spectroscopy in a frequency range of 0.2 THz~0.9 THz at room temperature. The absorption coefficient is modulated by external optical pump fields. Experimental results show that the absorption coefficient of near-SLN：Mg crystal is approximately in a range of 22 cm- 1_35 cm- 1 in a frequency range of 0.2 THz-0.9 THz and tunable up to nearly 15%. Further theoretical analysis reveals that the variation of absorption coefficient is related to the number of light-induced carriers, domain reversal process, and OH- absorption in this crystal.     

Influence of a two-dimensional electron gas on current—voltage characteristics of Al0.3{Ga}0.7 N/GaN high electron mobility transistors

The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors（HEMTs） are investigated and simulated using the self-consistent solution of the Schro dinger and Poisson equations for a two-dimensional electron gas（2DEG） in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 10^13 A/m^2 within a very narrow region（about 5 nm）.For a current density of 7 × 10^13 A/m62 passing through the 2DEG channel with a 2DEG density of above 1.2 × 10^17 m^-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.     

0.14THz过模表面波振荡器的模式分析

采用理论分析和实验验证相结合的方法, 研究了0.14 THz过模表面波振荡器(过模比D/λ≈3)中太赫兹波模式成分的分布. 首先针对具有圆周对称结构的过模切连科夫器件, 建立了用于模式分析的纵向场分解法. 接着基于2.5维PIC(Particle-in-cell)软件的电场模拟结果, 采用该方法对0.14 THz表面波振荡器的模式进行了详尽的理论分析. 结果表明, 器件中不同结构区域的太赫兹波模式成分不同, 相互间存在模式转换, 输出模式以TM₀₂和TM₀₃模为主, 并伴有少量TM₀₄模. 最后利用图像显示法获取了0.14 THz表面波振荡器的近场辐射能量分布, 与由模式分析结果得到的理论分布符合的较好, 证明了纵向场分解法用于模式分析的可行性和结果的正确性. 关键词： 过模 表面波振荡器 模式分析 场分解法     

0.14 THz过模表面波振荡器初步实验研究

为获得大功率太赫兹源,对基于表面波振荡器的相对论太赫兹源进行了初步的实验研究。为便于机械加工和实验装配,器件采用过模矩形波导慢波结构。利用理论分析和数值模拟得到的参数,在CKP1000加速器上进行了实验。功率测量采用辐射场功率密度积分方法,频率测量采用截止波导滤波法。在电子束压为320 kV、电子束流强度为2.1 kA、引导磁场为5 T条件下,实验获得频率0.136 THz以上、脉冲宽度为1.5 ns和辐射功率约2 MW的太赫兹信号输出。     

100-nm T-gate InAIAs/InGaAs InP-based HEMTs with fT= 249 GHz and fmax ： 415 GHz

InA1As/InGaAs high electron mobility transistors （HEMTs） on an InP substrate with well-balanced cutoff frequency fT and maximum oscillation frequency frnax are reported. An InA1As/InGaAs HEMT with 100-nm gate length and gate width of 2 × 50 μm shows excellent DC characteristics, including full channel current of 724 mA/mm, extrinsic maximum transconductance gm.max of 1051 mS/mm, and drain-gate breakdown voltage BVDG of 5.92 V. In addition, this device exhibits fT = 249 GHz and fmax = 415 GHz. These results were obtained by fabricating an asymmetrically recessed gate and minimizing the parasitic resistances. The specific Ohmic contact resistance was reduced to 0.031 0.mm. Moreover, the fT obtained in this work is the highest ever reported in 100-nm gate length InA1As/InGaAs InP-based HEMTs. The outstanding gm.max, fT, fmax, and good BVDG make the device suitable for applications in low noise amplifiers, power amplifiers, and high speed circuits.     

Evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistors by structure function method＊

The evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistor （HEMT） by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the A1GaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger A1GaN/GaN HEMT with 400μm SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged A1GaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip- level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.     

Significant performance enhancement in A1GaN/GaN high electron mobility transistor by high-κ organic dielectric

The electrical properties of A1GaN/GaN high electron mobility transistor （HEMT） with and without high-κ organic dielectrics are investigated. The maximum drain current ID max and the maximum transconductance gm max of the organic dielectric/A1CaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare A1GaN/GaN HEMT, respectively. Both the threshold voltage VT and gm max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the A1GaN/GaN HEMT by introducing the high-κ organic dielectric.     

过模结构0.14 THz高功率脉冲探测器研制

基于n型硅在强电场下的热电子效应,初步研制了一种采用过模结构的0.14 THz高功率太赫兹脉冲探测器。该探测器由基模波导WR6、过渡波导、过模波导WR10, n型硅探测芯片和偏置恒流源组成。模拟分析了探测器的工作过程,给出了相对灵敏度表达式,结果表明过模探测器能很好地工作在TE10模式。合理设计了探测芯片的结构参数和加工工艺,完成了探测芯片的加工和探测器样机的制作。将探测器样机在0.14 THz相对论表面波振荡器的辐射场进行了初步的验证性实验,并与二极管检波器的测量结果进行了对比分析。结果表明:过模探测器样机的响应时间在ps量级,相对灵敏度约为0.12 kW-1,最大承受功率至少为数十W,可用于0.14 THz高功率脉冲的直接探测。     

Enhancement-mode A1GaN/GaN high electronic mobility transistors with thin barrier＊

An enhancement-mode （E-mode） A1GaN/GaN high electron mobility transistor （HEMTs） was fabricated with 15-nm A1GaN barrier layer. E-mode operation was achieved by using fluorine plasma treatment and post-gate rapid thermal annealing. The thin barrier depletion-HEMTs with a threshold voltage typically around -1.7 V, which is higher than that of the 22-nm barrier depletion-mode HEMTs （-3.5 V）. Therefore, the thin barrier is emerging as an excellent candidate to realize the enhancement-mode operation. With 0.6-tim gate length, the devices treated by fluorine plasma for 150-W RF power at 150 s exhibited a threshold voltage of 1.3 V. The maximum drain current and maximum transconductance are 300 mA/mm, and 177 mS/ram, respectively. Compared with the 22-nm barrier E-mode devices, VT of the thin barrier HEMTs is much more stable under the gate step-stress,     

Performance of La203/InA1N/GaN metal-oxide-semiconductor high electron mobility transistors

We report on the performance of La203/InA1N/GaN metal-oxide-semiconductor high electron mobility transistors （MOSHEMTs） and InA1N/GaN high electron mobility transistors （HEMTs）. The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device, while the gate leakage current in the reverse direction could be reduced by four orders of magnitude. Compared with the HEMT device of a similar geometry, MOSHEMT presents a large gate voltage swing and negligible current collapse.     

Physical design of a wavelength tunable fully coherent VUV source using a self-seeding free electron laser

In order to meet the requirements of the synchrotron radiation users, a fully coherent VUV free electron laser （FEL） has been preliminarily designed. One important goal of this design is that the radiation wavelength can be easily tuned in a broad range （70 170 nm）. In the light of the users＇ demand and our actual conditions, the self-seeding scheme is adopted for this proposal. Firstly, we attempted to fix the electron energy and only changed the undulator gap to vary the radiation wavelength; however, our analysis implies that this is difficult because of the great difference of the power gain length and FEL efficiency at different wavelengths. Therefore, we have considered dividing the wavelength range into three subareas. In each subarea, a constant electron energy is used and the wavelength tuning is realized only by adjusting the undulator gap. The simulation results show that this scheme has an acceptable performance.     

Electron Acceleration and Bunch Generation by Intense Femtosecond Laser Pulse in Preplasma of a Target

We present analytical studies of electron acceleration in the low-density preplasma of a thin solid target by an intense femtosecond laser pulse. Electrons in the preplasma are trapped and accelerated by the ponderomotive force as well as the wake field. Two-dimensional particle-in-cell simulations show that when the laser pulse is stopped by the target, electrons trapped in the laser pules can be extracted and move forward inertially. The energetic electron bunch in the bubble is unaffected by the reflected pulse and passes through the target with small energy spread and emittance. There is an optimal preplasma density for the generation of the monoenergetic electron bunch if a laser pulse is given. The maximum electron energy is inverse proportion to the preplasma density.     

A double toroidal analyzer for scanning probe electron energy spectrometer

An ultra-high vacuum(UHV) compatible electron spectrometer employing a double toroidal analyzer has been developed. It is designed to be combined with a custom-made scanning tunneling microscope(STM) to study the spatially localized electron energy spectrum on a surface. A tip–sample system composed of a piezo-driven field-emission tungsten tip and a sample of highly ordered pyrolytic graphite(HOPG) is employed to test the performance of the spectrometer.Two-dimensional images of the energy-resolved and angle-dispersed electrons backscattered from the surface of HOPG are obtained, the performance is optimized and the spectrometer is calibrated. A complete electron energy loss spectrum covering the elastic peak to the secondary electron peaks for the HOPG surface, acquired at a tip voltage of-140 V and a sample current of 0.5 pA, is presented, demonstrating the viability of the spectrometer.     

Charge ordering modulations in a Bi0.4Ca0.6MnO3 film with a thickness of 110 nm

The low temperature sample stage in a transmission electron microscope is used to investigate the charge ordering behaviours in a Bi0.4Ca0.6MnO3 film with a thickness of 110 nm at 103 K. Six different types of superlattice structures are observed using the selected-area electron diffraction （SAED） technique, while three of them match well with the modulation stripes in high-resolution transmission electron microscopy （HRTEM） images. It is found that the modulation periodicity and direction are completely different in the region close to the Bi0.4Ca0.6MnO3/SrTiO3 interface from those in the region a little further from the Bi0.4Ca0.6MnO3/SrTiO3 interface, and the possible reasons for this are discussed. Based on the experimental results, structural models are proposed for these localized modulated structures.     

Optimization and numerical simulation for the extraction system of the H- multicusp ion source

A new ion source has been designed and manufactured for the CYCLONE30 accelerator, which has a much advanced performance compared with the original. It is expected that the newly designed ion source extraction system will transport a very large percentage of the beam without deteriorating the beam optics, which is designed to deliver an H- beam at 30 keV. The accelerator assembly consists of three circular aperture electrodes made of copper. The simulation study was focused on finding parameter sets that raise the beam perveance as large as possible and which reduce the beam divergence as low as possible. Ion beams of the highest quality are extracted whenever the half-angular divergence is minimum, for which the perveance current intensity and the extraction gap have optimum values. The triode extraction system is designed and optimized by using CST software （for Particle Beam Simulations）. The physical design of the extraction system is given in this paper. From the simulation results, it is concluded that it is possible to achieve this goal by decreasing the thickness of the plasma electrode, shortening the first gap, and adjusting the acceleration electrode voltage.