X-ray photoemission for probing charging/discharging dynamics

A novel technique is introduced for probing charging/discharging dynamics of dielectric materials in which X-ray photoemission data is recorded while the sample rod is subjected to +/-10.0 V square-wave pulses with varying frequencies in the range of 10(-3) to 10(3) Hz. For a clean silicon sample, the Si2p(Si(0)) peak appears at correspondingly -10.0 eV and +10.0 eV binding energy positions (20.0 eV difference) with no frequency dependence. However, the corresponding peak of the oxide (Si(4+)) appears with less than 20.0 eV difference and exhibits a strong frequency dependence due to charging of the oxide layer, which is faithfully reproduced by a theoretical model. In the simplest application of this technique, we show that the two O1s components can be assigned to SiO(x) and TiO(y) moeties by correlating their dynamical shifts to those of the Si2p and Ti2p peaks in a composite sample. Our pulsing technique turns the powerful X-ray photoemission into an even more powerful impedance spectrometer with an added advantage of chemical resolution and specificity.     

XPS analysis with external bias: a simple method for probing differential charging

The XPS spectra of thermally grown oxide layers on Si, Al, W and Hf substrates have been recorded while the samples were subjected to external d.c. voltage bias. The bias induces additional shifts in the measured binding energy differences between the XPS peaks of the oxide and that of the metal substrate in Si and Al (as probed both in the 2p and the KLL Auger regions), but not in W and Hf (as probed in the 4f region). These bias induced shifts are attributed to differential charging between the oxide layer and the substrate, which in turn is postulated to be related to the capacitance and inversely to the dielectric constant of the oxide layer. Accordingly, silicon dioxide with the smallest dielectric constant undergoes the largest differential charging, aluminium oxide is in the middle and no appreciable charging can be induced in the high‐k tungsten and hafnium oxides, all of which are ～6 nm thick. Copyright © 2004 John Wiley & Sons, Ltd.     

In situ x-ray photoelectron spectroscopic and density-functional studies of Si atoms adsorbed on a C60 film

The interaction between C(60) and Si atoms has been investigated for Si atoms adsorbed on a C(60) film using in situ x-ray photoelectron spectroscopy (XPS) and density-functional (DFT) calculations. Analysis of the Si 2p core peak identified three kinds of Si atoms adsorbed on the film: silicon suboxides (SiO(x)), bulk Si crystal, and silicon atoms bound to C(60). Based on the atomic percent ratio of silicon to carbon, we estimated that there was approximately one Si atom bound to each C(60) molecule. The Si 2p peak due to the Si-C(60) interaction demonstrated that a charge transfer from the Si atom to the C(60) molecule takes place at room temperature, which is much lower than the temperature of 670 K at which the charge transfer was observed for C(60) adsorbed on Si(001) and (111) clean surfaces [Sakamoto et al., Phys. Rev. B 60, 2579 (1999)]. The number of electrons transferred between the C(60) molecule and Si atom was estimated to be 0.59 based on XPS results, which is in good agreement with the DFT result of 0.63 for a C(60)Si with C(2v) symmetry used as a model cluster. Furthermore, the shift in binding energy of both the Si 2p and C 1s core peaks before and after Si-atom deposition was experimentally obtained to be +2.0 and -0.4 eV, respectively. The C(60)Si model cluster provides the shift of +2.13 eV for the Si 2p core peak and of -0.28 eV for the C 1s core peak, which are well corresponding to those experimental results. The covalency of the Si-C(60) interaction was also discussed in terms of Mulliken overlap population between them.     

Charging/discharging of Au (core)/silica (shell) nanoparticles as revealed by XPS

By recording XPS spectra while applying external voltage stress to the sample rod, we can control the extent of charging developed on core-shell-type gold nanoparticles deposited on a copper substrate, in both steady-state and time-resolved fashions. The charging manifests itself as a shift in the measured binding energy of the corresponding XPS peak. Whereas the bare gold nanoparticles exhibit no measurable binding energy shift in the Au 4f peaks, both the Au 4f and the Si 2p peaks exhibit significant and highly correlated (in time and magnitude) shifts in the case of gold (core)/silica (shell) nanoparticles. Using the shift in the Au 4f peaks, the capacitance of the 15-nm gold (core)/6-nm silica (shell) nanoparticle/nanocapacitor is estimated as 60 aF. It is further estimated that, in the fully charged situation, only 1 in 1000 silicon dioxide units in the shell carries a positive charge during our XPS analysis. Our simple method of controlling the charging, by application of an external voltage stress during XPS analysis, enables us to detect, locate, and quantify the charges developed on surface structures in a completely noncontact fashion.     

Structural and optical properties of passivated silicon nanoclusters with different shapes: a theoretical investigation

Optimized geometries and electronic structures of hydrogenated silicon nanoclusters, which include the Td and Ih symmetries, have been generated by using the semiempirical AM1 and PM3 methods, the density functional theory (DFT) B3LYP method with the 6-31G(d) and LANL2DZ basis sets from the Gaussian 03 package, and the local density functional approximation (LDA), which is implemented in the SIESTA package. The calculated diameters for these Td symmetric hydrogenated silicon nanoclusters are in the range from 6.61 A (Si5H12) to 23.24 A (Si281H172). For the Ih symmetry, we calculated Si20H20 and Si100H60 nanoclusters only. Theoretically, the energy gap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) is size dependent. The calculated energy gap decreases (Si5H12: 7.65 eV to Si281H172: 3.06 eV) while the diameter of silicon nanocluster increases. By comparing different calculated results, we concluded that the calculated energy gap by B3LYP/6-31G(d)//LDA/SIESTA is close to that from experiment and that the LDA/SIESTA result underestimates the experimental value. On the contrary, the AM1 and PM3 results overestimate the experimental results. For investigation of the optical properties of Si nanoclusters as a function of surface passivation, we carried out a B3LYP/6-31G(d)//LDA/SIESTA calculation of the Si35 and Si47 core clusters with full alkyl-, OH-, NH2-, CH2NH2-, OCH3-, SH-, C3H6SH-, and CN- passivations. The calculated optical properties of alkyl passivated Si35 nanoclusters (Si35(CH3)36, Si35(C2H5)36, and Si35(C3H7)36) are close to one another and are higher than those of oxide, nitride, and sulfide passivated Si 35 clusters. In conclusion, the alkyl passivant affects weakly the calculated optical gaps, and the electron-withdrawing passivants generate a red-shift in the energy gap of silicon nanoclusters. A size-dependent effect is also observed for these passivated Si nanoclusters.     

X-ray photoelectron spectroscopy of thermally grown silicon dioxide films on silicon

At various stages of in situ thermal oxidation of Si(111) monocrystals, X-ray photoelectron spectroscopy (XPS or ESCA) reveals a shift in the silicon core-level binding energies which varies continuously from 2.4 to 4.2 eV. From the oxygen and silicon ESCA peak intensities, these films can be said to have the silicon dioxide composition with an excess in oxygen concentration. By correlating the silicon 2p or 2s binding-energy shifts with oxygen KLL Auger energy and oxygen 1s binding-energy shifts, it is shown that a Fermi level shift and differential extra-atomic relaxation energy in the interfacial region must be invoked, in addition to chemical structure considerations, to interpret these data.     

X-ray-induced production of gold nanoparticles on a SiO(2)/Si system and in a poly(methyl methacrylate) matrix

Prolonged exposure to X-rays of HAuCl(4) deposited from an aqueous solution onto a SiO(2)/Si substrate or into a poly(methyl methacrylate) (PMMA) matrix induces reduction of the Au(3+) ions to Au(0) and subsequent nucleation to gold nanoclusters as recorded by X-ray photoelectron spectroscopy. The corresponding major oxidation product is determined as chlorine {HAuCl(4)(ads) + X-rays --> Au(ads) + (3/2)Cl(2)(ads) + HCl(ads)}, which is initially adsorbed onto the surface but eventually diffuses out of the system into the vacuum. The reduced gold atoms aggregate (three-dimensionally) into gold nanoclusters as evidenced by the variation in the binding energy during X-ray exposure, which starts as 1.3 eV but approaches a value that is 0.5 eV higher than that of the bulk gold. The disappearance of the oxidation product (Cl2p signal) and the growth of the nanoclusters (related to the measured binding energy difference between the Si2p of the oxide and Au4f of the reduced gold) exhibit first-order kinetics which is approximately 3 times slower than the reduction of Au(3+), indicating that both of the former processes are diffusion controlled. Similarly, gold ions incorporated into PMMA can also be reduced and aggregated to gold nanoclusters using 254 nm deep UV irradiation in air evidenced by UV-vis-NIR absorption spectrocopy.     

Microstructure-controlled aerosol-gel synthesis of ZnO quantum dots dispersed in SiO2 nanospheres

ZnO quantum dots dispersed in a silica matrix were synthesized from a TEOS:Zn(NO(3))(2) solution by a one-step aerosol-gel method. It was demonstrated that the molar concentration ratio of Zn to Si (Zn/Si) in the aqueous solution was an efficient parameter with which to control the size, the degree of agglomeration, and the microstructure of ZnO quantum dots (QDs) in the SiO(2) matrix. When Zn/Si ≤ 0.5, unaggregated quantum dots as small as 2 nm were distributed preferentially inside SiO(2) spheres. When Zn/Si ≥ 1.0, however, ZnO QDs of ～7 nm were agglomerated and reached the SiO(2) surface. When decreasing the ratio of the Zn/Si, a blue shift in the band gap of ZnO was observed from the UV/Visible absorption spectra, representing the quantum size effect. The photoluminescence emission spectra at room temperature denoted two wide peaks of deep-level defect-related emissions at 2.2-2.8 eV. When decreasing Zn/Si, the first peak at ～2.3 eV was blue-shifted in keeping with the decrease in the size of the QDs. Interestingly, the second visible peak at 2.8 eV disappeared in the surface-exposed ZnO QDs when Zn/Si ≥ 1.0.     

High-resolution soft X-ray photoelectron spectroscopic studies and scanning auger microscopy studies of the air oxidation of alkylated silicon(111) surfaces

High-resolution soft X-ray photoelectron spectroscopy was used to investigate the oxidation of alkylated silicon(111) surfaces under ambient conditions. Silicon(111) surfaces were functionalized through a two-step route involving radical chlorination of the H-terminated surface followed by alkylation with alkylmagnesium halide reagents. After 24 h in air, surface species representing Si(+), Si(2+), Si(3+), and Si(4+) were detected on the Cl-terminated surface, with the highest oxidation state (Si(4+)) oxide signal appearing at +3.79 eV higher in energy than the bulk Si 2p(3/2) peak. The growth of silicon oxide was accompanied by a reduction in the surface-bound Cl signal. After 48 h of exposure to air, the Cl-terminated Si(111) surface exhibited 3.63 equivalent monoleyers (ML) of silicon oxides. In contrast, after exposure to air for 48 h, CH(3)-, C(2)H(5)-, or C(6)H(5)CH(2)-terminated Si surfaces displayed <0.4 ML of surface oxide, and in most cases only displayed approximately 0.20 ML of oxide. This oxide was principally composed of Si(+) and Si(3+) species with peaks centered at +0.8 and +3.2 eV above the bulk Si 2p(3/2) peak, respectively. The silicon 2p SXPS peaks that have previously been assigned to surface Si-C bonds did not change significantly, either in binding energy or in relative intensity, during such air exposure. Use of a high miscut-angle surface (7 degrees vs < or =0.5 degrees off of the (111) surface orientation) yielded no increase in the rate of oxidation nor change in binding energy of the resultant oxide that formed on the alkylated Si surfaces. Scanning Auger microscopy indicated that the alkylated surfaces formed oxide in isolated, inhomogeneous patches on the surface.     

Blue luminescence of Au nanoclusters embedded in silica matrix

Photoluminescence study using the 325 nm He-Cd excitation is reported for the Au nanoclusters embedded in SiO(2) matrix. Au clusters are grown by ion beam mixing with 100 KeV Ar(+) irradiation on Au [40 nm]/SiO(2) at various fluences and subsequent annealing at high temperature. The blue bands above approximately 3 eV match closely with reported values for colloidal Au nanoclusters and supported Au nanoislands. Radiative recombination of sp electrons above Fermi level to occupied d-band holes are assigned for observed luminescence peaks. Peaks at 3.1 and 3.4 eV are correlated to energy gaps at the X- and L-symmetry points, respectively, with possible involvement of relaxation mechanism. The blueshift of peak positions at 3.4 eV with decreasing cluster size is reported to be due to the compressive strain in small clusters. A first principle calculation based on density functional theory using the full potential linear augmented plane wave plus local orbitals formalism with generalized gradient approximation for the exchange correlation energy is used to estimate the band gaps at the X- and L-symmetry points by calculating the band structures and joint density of states for different strain values in order to explain the blueshift of approximately 0.1 eV with decreasing cluster size around L-symmetry point.     

Interface diffusion and chemical reaction of PZT layer/Si (111) sample during the annealing treatment in air

The interface diffusion and chemical reaction between a PZT (PbZrxTi1-xO3) layer and a Si(111) substrate during the annealing treatment in air have been studied by using XPS (X-Ray Photoelectron Spectroscopy) and AES (Auger Electron Spectroscopy). The results indicate that the Ti element in the PZT precursor reacted with residual carbon and silicon, diffused from the Si substrate, to form TiCx, TiSix species in the PZT layer during the thermal treatment. A great interface diffusion and chemical reaction took place on the interface of PZT Si also. The silicon atoms diffused from silicon substrate onto the surface of PZT layer. The oxygen atoms, which came from air, diffused into silicon substrate also and reacted with Si atoms to form a SiO2 interlayer between the PZT layer and the Si (111) substrate. The thickness of SiO2 interlayer was proportional to the square root of treatment time. The formation of the SiO2 interlayer was governed by the diffusion of oxygen in the PZT layer at low annealing tempera     

利用XPS 氩离子刻蚀表征锂离子电池Si/C负极材料中含硅的活性物质

以石墨、沥青和纳米硅粉为原料制备了锂离子电池Si/C负极材料,使用SEM/ BSE 、Raman、XRD、XPS及XPS氩离子刻蚀等方法对其硅活性物质进行了具体分析。结果表明,XRD和Raman仅判断出负极材料中含有活性物质单质Si;常规XPS结果发现近一半的Si已被氧化为惰性物质SiO2;而使用XPS氩离子刻蚀方法发现负极材料中Si存在5种化学态,包括活性物质单质Si、Si2O、SiO、Si2O3,及惰性物质SiO2;定量结果表明,复合材料的硅活性物质高于96.56%,且主要结构是低价态硅氧化物,而非单质Si。XPS氩离子刻蚀的分析方法为锂离子电池负极材料中硅活性物质的研究提供了新思路。     

Identification of the adsorption sites of molecular oxygen on Si(111) using XPS

Most of the oxygen adsorb dissociatively on Si, however there is also a significant amount of metastable molecular oxygen chemisorbed on Si. The adsorption site/configuration of these molecular oxygen species is still a controversial subject. New XPS results for oxygen adsorption on Si(111) 7×7 (150K) are presented. They reveal four distinct oxygen components; one of the metastable components has never been reported before. We tentatively identify them as: i) stable oxide (Si-O-Si bridges)(˜532 eV), ii) diffusing oxygen atom (˜533 eV) in silicon oxide and iii) metastable molecular oxygen species (˜527.6 eV and ˜530.6 eV). The latter have been attributed to peroxy radical which is defined as a diatomic oxygen bonded to a single Si adatom. Our results allow us to distinguish the two main configurations of peroxy radical: paul-para and grif. Both of them possess a lifetime of ˜ 180 min.     

Preparation of a well-defined amino-terminated self-assembled monolayer and copper microlines on a polyimide substrate covered with an oxide nanoskin

A well-ordered, uniform amino (NH(2))-terminated organosilane self-assembled monolayer (SAM) was prepared on a polyimide (PI) substrate, the surface of which had silica-like reactivity. First, through chemical vapor deposition of 1,3,5,7-tetramethylcyclotetrasiloxane and subsequent photooxidation using 172 nm vacuum ultraviolet light, an extremely thin silicon dioxide (SiO(2)) layer about 1 nm thick, which we call an "oxide nanoskin" (ONS), was prepared on a PI substrate. Due to the presence of this ONS layer, the PI surface's properties became almost identical with those of Si covered with native oxide (SiO(2)/Si) without any marked change in surface morphology, as evidenced by zeta-potential measurements, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Next, this ONS-covered PI (ONS/PI) surface was exposed to vapor of a 12.5 vol % solution of N-(6-aminohexyl)(3-aminopropyl)trimethoxysilane (AHAPS) molecules diluted with absolute toluene. On the basis of contact angle analysis, the surface energy of this AHAPS/ONS/PI sample was mostly consistent with that of a SiO(2)/Si substrate covered with an AHAPS-SAM (AHAPS/SiO(2)/Si). On the other hand, the surface energy of an AHAPS-treated PI (AHAPS/PI) substrate was much smaller than that of the AHAPS/ONS/PI substrate due to insufficient surface coverage by the AHAPS molecules. This was also confirmed by lateral force microscopy using photolithographically micropatterned samples. Fabricated micropatterns composed of AHAPS- and SiO(2)-covered regions were clearly imaged on the AHAPS/ONS/PI substrate through their difference in friction, while the friction contrast of the micropatterned AHAPS/PI substrate was unclear. This marked difference in packing density of the AHAPS molecules had a direct influence on the adsorption behavior of palladium colloids and subsequent electroless plating of copper (Cu). As confirmed by AFM and XPS, metallization proceeded only on the AHAPS-covered regions, while the SiO(2)-covered regions remained free of deposits, resulting in the formation of 10-mum-wide Cu microlines on both samples. However, the plating rate achieved on the AHAPS/ONS/PI substrate was about 4.5 times faster than that on the AHAPS/PI substrate and the pattern resolution was considerably fine.     

聚乙酰亚胺涂敷单晶硅表面上全氟亏酸单层膜

Ultra-thin film of perfluorodecanoic acid expected to be excellent lubricant for micro-machines was prepared successfully on single crystal silicon substrate.The film was characterized by means of X-ray photoelectron spectroscopy (XPS) and contact-angle meter.The chemical reaction involved in the preparation of the ultra-thin film was discussed as well.After being immersed in a dilute aqueous solution of polyethyleneimine (PEI) for 15 minutes and rinsed with distilled water,the silicon substrate was coated with a thin film of PEI,which was then put into a dilute solution (1× 10－ 3 mol· L－ 1) of perfluorodecanoic acid in hexadecane.Subsequently the steady perfluorodecanoic acid ultra-thin film was developed on PEI coating in the presence of a covalent amide bond between carboxylic group and the primary or secondary amine groups of PEI.This process was accompanied by the contact angle changes of water droplet on the Si surface (see Table 1).Moreover,the reaction between perfluorodecanoic acid and PEI was significantly influenced by N,N′ -dicyclohexylcarbodiimide (DCCD).The contact angle on the ultra-thin film of perfluorodecanoic acid is only 66.3° in the absence of DCCD in the reacting solution; it rises to 89.4° in the presence of DCCD.This indicates that the reaction between perfluorodecanoic acid and PEI was accelerated by DCCD,and the quality of perfluorodecanoic acid ultra-thin film thus improved.XPS analysis of the ultra-thin film indicates that the derivatization of PEI with perfluorodecanoic acid was accompanied by several changes.First,a large and highly symmetrical F 1s peak appeared at 688.3 eV (C－ F*).Secondly,a new peak of N 1s appeared at 400.7 eV (chemical shift 1.4 eV),which was attributed to the N atom attached to the carbonyl group (O=C－ N*).Thirdly,three new peaks of C 1s appeared at 286.1 eV (chemical shift 1.5 eV),288.1 eV (chemical shift 3.5 eV),and 291.0 eV (chemical shift 5.4 eV),respectively.These C 1s peaks were attributed to the C atom attached to the O=C－ N group (O=C－ N－ C*),the carboxyl C atom (O=C*－ N),and the C atom in － CF3 group (C*－ F),respectively.Therefore it can be concluded that perfluorodecanoic acid has been chemically adsorbed onto the surface of PEI and perfluorodecanoic acid ultra-thin film prepared successfully.     

Charge referencing issues in XPS of insulators as evidenced in the case of Al‐Si‐N thin films

Accurate charge referencing in XPS of insulating specimens is a delicate issue. This difficulty is illustrated in the case of Al‐Si‐N composite thin films deposited by reactive magnetron sputtering with variable composition from pure aluminum nitride to pure silicon nitride. The samples were mounted with Au‐coated metallic clamps. Argon sputter cleaning was required to remove a surface native oxide before analysis. For charge referencing implanted argon atoms from the sputter gas and a small amount of gold re‐deposited from the metallic clamps onto the specimen surface during sputter cleaning were evaluated. For the argon atoms, a surprisingly large chemical shift (～1 eV) and a significant peak broadening (0.6 eV) of the Ar 2p_3/2 photoelectron line were found with varying the Si content of the films. This could be related to chemical and structural changes of the Al‐Si‐N films. Hence implanted argon could not be used for charge referencing of Al‐Si‐N samples. In contrast to the implanted argon, the Au 4f_7/2 line width of the gold re‐deposited onto the sample surface did not depend on the Si content of Al‐Si‐N films. A constant energy shift (～1.2 eV) of the Au 4f_7/2 line as compared with bulk gold was, however, found, which was related to the size of gold particles formed on the insulating films. Therefore gold could be reliably used to study chemical shifts of sample‐relevant species in Al‐Si‐N films, but the absolute binding energies of Al 2p, Si 2p and N 1s photoelectrons could not be determined. Copyright © 2011 John Wiley & Sons, Ltd.     

SiO2微球表面吸附PDADMAC的研究

The effects of concentration of NaCl and pH values on the adsorption isotherms of poly（diallyldimethylammonium chloride）（ PDADMAC）on SiO2 microspheres and Zeta-potential of adsorbed-silica in different pH buffer have been investigated. The results show that the adsorption of the polyelectrolyte increases with increasing salt concentration and pH values,respectively. It follows the Langmiur isotherm. The isoelectric point of SiO2 microspheres gradually migrates toward the high pH values with increasing the adsorption of PDADMAC. Under alkaline conditions the PDADMAC adsorption on SiO2 microspheres shows good stability of disperse. The X-ray photoelectron spectroscopy（XPS）analysis of the PDADMAC adsorpted SiO2 microspheres sample exhibits the presence of nitrogen-containing intermediates with N1s XPS peaks at the binding energy of 401.7 eV. The O1s spectra show two distinct peaks which are oxygen-containing silica corresponding lower binding energy and adsorping oxygen corresponding higher binding energy,respectively. With the PDADMAC adsorption on SiO2 microspheres the peak of O1s contributed from the part of adsorping oxygen increases.     

Quantized Double‐Layer Charging of Iron Oxide Nanoparticles on a‐Si:H Controlled by Charged Defects in a‐Si:H

Sequential single‐electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir‐Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film (a‐Si:H) is reported. Quantized double‐layer charging of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the excess of negative/positive charged defect states in the a‐Si:H layer. The particular charge states in a‐Si:H are created by the simultaneous application of a suitable bias voltage and illumination before the measurement.     

Adsorption of silanes bearing nitrogenated Lewis bases on SiO2/Si (100) model surfaces

The present paper describes the one-pot procedure for the formation of self-assembled thin films of two silanes on the model oxidized silicon wafer, SiO2/Si. SiO2/Si is a model system for other surfaces, such as glass, quartz, aerosol, and silica gel. MALDI-TOF MS with and without a matrix, XPS, and AFM have confirmed the formation of self-assembled thin films of both 3-imidazolylpropyltrimethoxysilane (3-IPTS) and 4-(N-propyltriethoxysilane-imino)pyridine (4-PTSIP) on the SiO2/Si surface after 30 min. Longer adsorption times lead to the deposition of nonreacted 3-IPTS precursors and the formation of agglomerates on the 3-IPTS monolayer. The formation of 4-PTSIP self-assembled layers on SiO2/Si is also demonstrated. The present results for the flat SiO2/Si surface can lead to a better understanding of the formation of a stationary phase for affinity chromatography as well as transition-metal-supported catalysts on silica and their relationship with surface roughness and ordering. The 3-IPTS and 4-PTSIP modified SiO2/Si wafers can also be envisaged as possible built-on-silicon thin-layer chromatography (TLC) extraction devices for metal determination or N-heterocycle analytes, such as histidine and histamine, with "on-spot" MALDI-TOF MS detection.