Chemical effects in TiO2 and titanates due to bombardment with Ar+ and O 2 + ions of different energies (3.5-10 keV)

Compositional and chemical changes in TiO₂ and Ph, Ni, Al and Ba titanates induced by bombardment with Ar⁺ and O ₂ ⁺ ons of different energies have been studied quantitatively by XPS. An increase of preferential loss of oxygen and, in case of PbTiO₃, of lead has been observed when increasing the Ar+ ion energy from 3.5 to 10 keV. Because of oxygen loss, Ti⁴⁺ species reduce to Ti³⁺ and Ti²⁺. In addition, the loss of oxygen from PbTiO₃ and NiTiO₃ leads to the metallic state of nickel and lead, whereas aluminium and barium in Al₂TiO₅ and BaTiO₃ maintain their chemical state (i.e., Al³⁺ and Ba²⁺). Bombardment with OZ ions of PbTiO₃ and NiTiO₃ leads to a partial reduction of Pb and Ni. This metallization and the preferential loss of lead are more efficient at higher ion energies for both, O ₂ ⁺ and Ar⁺ bombardment. The results are discussed in terms of chemical stabilities and the possibility of oxygen diffusion in the bombarded oxides.     

Ion-impact chemistry in the system titanium-oxygen (studies on bombardment-enhanced conductivity—III)

The bombardment of TiO₂, whether poly- or single crystalline, with Kr ions leads to an altered surface layer having the following characteristics. It exhibits a high electrical conductivity, has the diffraction pattern of finely polycrystalline Ti₂O₃, is on the average 110 ± 20 Å thick (for 30 keV Kr), and is indefinitely stable in air at room temperature. The formation of the layer is favored by increasing the target temperature. Formation is half complete at (6 ± 2) × 10¹⁶ ions/cm², hence at a dose substantially greater than that for the half completion of sputter equilibrium ([7 ± 2] × 10¹⁵ ions/cm²). One model which could lead to Ti₂O₃ can be excluded fairly readily: this is thermal-spike stimulated vaporization, as the relevant vapor pressures are too low. More satisfactory is a model in which, due to either preferential oxygen sputtering or internal precipitation of oxygen, Ti₂O₃ nuclei are formed and grow. The reason that the stoichiometry is precisely Ti₂O₃ can be rationalized by an argument based on surface binding energies (E_b), in the sense that E_b for TiO₂ to sputter congruently is 6.4 eV, to yield nuclei of Ti₃O₅ is 5.7, to yield nuclei of Ti₂O₃ is 5.1, and to yield TiO is 6.4. A similar rationalization holds also for impact-induced chemical changes observed or inferred with AgBr, CuO, Fe₂O₃, MoO₃, U₃O₈ and V₂O₅, except that here thermal-spike stimulated vaporization cannot be excluded.     

离子注入掺杂锐钛矿TiO2薄膜的光学性能

 在玻璃基体上,采用射频磁控溅射方法在不同的基体温度下制备了TiO₂薄膜,然后在薄膜中注入注量分别为5×1016, 1×1017和5×1017/cm2的N离子以制备N掺杂的TiO₂薄膜。X射线衍射结果表明：制备出的TiO₂薄膜为锐钛矿型。X射线光电子能谱研究结果表明：注入的N离子与TiO₂晶粒相互作用,形成了含氮的TiO_xN_2-x化合物,从而改变了TiO₂薄膜的吸收边;随N离子注量增加,吸收边移动更明显;同时,由于氮离子注入产生的辐照缺陷使TiO₂薄膜在紫外和可见光区的吸收也明显增强。     

Absolute measurement of sputtered ion fractions using matrix isolation spectroscopy

Sputtering yields for neutrals and ions have been measured by collecting the sputtered species in a noble gas matrix and determining their amounts from optical absorption spectroscopy. The atomic ion fractions for Ti and Zr bombarded by O₂⁺ at 2 keV are 0.8 and 0.4, respectively, whereas TiO and ZrO are sputtered largely as neutrals. Neutral sputtering yields from Ar⁺ bombardment arc consistent with previous measurements. The experimental results are compared with various theoretical models for the sputtering process.     

Structural characterization of titanium oxide layers prepared by plasma based ion implantation with oxygen on Ti6Al4V alloy

Ti6Al4V alloy was implanted with oxygen by using plasma based ion implantation (PBII) at pulsed voltage ranging from −10 to −50 kV with a frequency of 100 Hz. In order to maintain a lower implantation temperature, an oil cooling working table was employed. The structure of the modified layers was characterized by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The results show that the thickness of the titanium oxide layer increases significantly with the increase of implanted voltage. The structure of the modified layer changes along depth. It is found that the surface layer consists of TiO₂, and the subsurface layer is a mixing structure of TiO_2, Ti₂O₃ and TiO. There is crystalline rutile phase existing in the modified layer of sample implanted at high implanted voltage. In addition, in the outmost modified surface, aluminum present as oxidized state, and vanadium could not be detected.     

Fabrication and structural characterization of TiO nanoparticle soft-landed on substrate by the magnetron sputtering-gas aggregation method

We have succeeded to fabricate the thin film mainly or entirely consisting of nano-crystallites TiO on a substrate at room temperature by using the magnetron sputtering combined with the gas aggregation method which has the capability to deposit grown small particles and/or clusters of the desired compound material on the substrate in soft-landed mode. The important experimental parameters to control the growth of TiO particles are identified as partial pressure of additional oxygen gas, growth-reaction distance L_td, and LN₂ cooling of growth chamber. The smallest averaged diameter of TiO nano-particles is 5.62 nm and size distribution being from 2 to 8 nm under 50 mm of L_td. The compositional uniformity is confirmed by EDS and EELS. The chemical state of the film observed by Ti 2P XPS peak confirms the primarily growth of TiO and indicates the formation of minor content of amorphous Ti_1-xO_x and/or Ti_1-xC_x particularly at the surface of the film.     

磁控溅射制备Y2O3-TiO2薄膜形貌的研究

室温下采用射频磁控溅射法,在硅衬底上制备了Y₂O₃-TiO₂氧化物复合薄膜.利用XRD(X-ray diffraction)和AFM( atomic force microscopy)分析观察了退火前后样品的物相、形貌等变化,讨论了致密薄膜的生长机理.实验发现,溅射功率越大,薄膜的平整度和致密度越好.对热处理前后样品的结晶结构和表面形貌的分析结果显示,在本实验参数范围内,随着溅射功率的增大,更多的Y₂O_{3关键词： 2}O₃-TiO₂薄膜')" href="#">Y₂O₃-TiO₂薄膜 表面形貌 原子力显微镜 磁控溅射     

Role of structural vacancies in the stabilization of the basic B1 structure in nonstoichiometric titanium monoxide TiO y

The electron structures and formation enthalpies of vacancy-free cubic TiO, vacancy-ordered monoclinic Ti₅O₅, and vacancy-disordered cubic TiO _y have been investigated using DFT+GGA calculations. Ti₅O₅ was found to be the stablest phase and TiO was found to be the least stable. The reason for the stability of the titanium and oxygen vacancies in the basic B1 structures of Ti₅O₅ and TiO _y has been deduced. The titanium vacancies lead to a decrease in the Fermi energy. Oxygen vacancies cause strengthening in covalent Ti-Ti bonding.     

Auger and X-ray photoelectron spectroscopic and electrochemical characterization of titanium thin film electrodes

Auger (AES) and X-ray photoelectron spectroscopic (XPS) characterizations of electrochemically oxidized titanium are described. Surface oxides on thin (200–250 Å) vacuum deposited titanium films were formed under conditions of linear potential scan in 1 N KClO₄, 1 N HClO₄ and 1 N H₂SO₄. Current/voltage, capacitance/voltage and surface conductance/voltage relationships confirmed the irreversible formation of the surface oxide at thickness of 20–30 Å/V, for low applied potentials. Post moretem analysis of the thin films by AES and XPS indicated a mixture of metal and metal oxides (TiO₂, Ti₂O₃, TiO) on each surface, with the higher oxide states predominating on the electrochemically oxidized films. Observation of the L_IIIM_2,3M_4,5, N(E) signal shape in the Auger spectra of the potentially oxidized oxidized films showed a suboxide TiO-like surface rather than an TiO₂ surface state. Deconvolution of the $\text{Ti}\text{(2}\text{p}{}_{\mathrm{<mtext>1</mtext><mtext>2</mtext><mtext>,\; </mtext><mtext>3</mtext><mtext>2</mtext>}}\text{)}\text{XPS}$ spectra confirmed the coexistence of multiple oxidation states of Ti during electrochemical or atmospheric oxidation of the films. Ion sputtering of each surface was used to characterize the subsurface metal/metal oxide composition and to correlate the oxygen to metal atomic ratio with electrochemical pretreatment.     

Local characteristics of crystal electronic structure in the Hartree-Fock method

The formalism developed in molecular theory for calculation of local electronic-structure characteristics in a nonorthogonal atomic basis is generalized to systems with translational symmetry. Expressions have been derived to describe the bond orders, covalency, and valence in a crystal for restricted and unrestricted Hartree-Fock methods. Nonempirical electronicstructure calculations and an analysis of chemical bonding in the TiO₂, Ti₂O₃, and TiO titanium oxide crystals have been performed. Fiz. Tverd. Tela (St. Petersburg) 41, 1407–1411 (August 1999)     

IR spectroscopic studies of periodic columnar nanostructures of anodic titanium oxide

The experimental specimens consisted of periodic columnar nanostructures of anodic titanium oxide (average dimension≈60 nm) that were produced by anodic oxidation of the two-layer thin-film composition Ti−Al in a solution of oxalic acid that was followed by vacuum annealing. The structures formed were studied by electron microscopy and reflection IR spectroscopy. It is found that the nanodimensional columns consist predominantly of quasiamorphous Ti dioxide in the form of rutile and anatase with minimum inclusions of Ti₂O₃ and TiO. Vacuum annealing decreases the content of TiO₂ and increases that of Ti₂O₃ and TiO in the oxide columns. These changes characterize dissolution of oxygen from the composition of the columnar structures in a residual film of metallic Ti. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 2, pp. 200–204, March–April, 1998.     

Composition of the sputter deposited W-Ti thin films

Tungsten-titanium (W-Ti) thin film was deposited by dc Ar⁺ sputtering of W(70 at.%)-Ti(30 at.%) target. The thin film composition, determined by X-ray photoelectron spectroscopy (XPS) depth profiling, is W_(0.77±0.07)Ti_(0.08±0.03)O_(0.15±0.03). The presence of oxygen in the deposit is due to the rather poor vacuum conditions during the deposition, while significant deficiency of Ti, as compared to the sputtering target composition cannot be explained straightforwardly. Monte Carlo simulations of both, transport of sputtered particles from target to the substrate through the background gas (SRIM 2003 program) and thin film sputtering during the XPS depth profiling (program TRIDYN_FZR) are presented. The simulations show that the particle transport through the background gas is mainly responsible for the Ti depletion: the estimated composition of the thin film is W_0.61Ti_0.16O_0.23. Additional apparent Ti depletion occurs due to the preferential sputtering during the thin film composition analysis. The simulation of the sputtering process show that the surface concentration measured by XPS should be about W_0.74Ti_0.11O_0.15. The discrepancy between the estimated surface composition and the actual experimental result is in the range of the experimental error.     

Magnéli相亚氧化钛Ti8O15的电子结构和光学性能的第一性原理研究

采用基于密度泛函理论的平面波超软赝势法研究了Magnéli相亚氧化钛Ti₈O₁₅的电子结构和光学性能. 计算出的能带结构显示Ti₈O₁₅相比锐钛型TiO₂禁带宽度大幅度降低. 态密度分析表明, 其原因在于Ti₈O₁₅的O原子的2p轨道以及Ti原子的3p, 3d轨道相对于TiO₂的相应轨道向左产生了偏移, 同时由于O原子的缺失使得Ti原子的3d, 3p轨道多余电子在Fermi能级附近聚集形成新的电子能级. 态密度分析结果还显示, 相对于TiO₂, Ti₈O₁₅ Fermi能级附近电子格局发生了如下变化: O原子的2p轨道电子贡献减少, Ti原子的3d轨道的电子对Fermi能级贡献增大. 光吸收计算图谱表明, TiO₂仅在紫外光区有较高的光吸收能力, 而Ti₈O₁₅由于禁带宽度变窄引起光吸收范围红移到可见光区, 从而在紫外光区和可见光区都有较高的光吸收能力, 计算结果与实验得到的紫外-可见漫反射吸收光谱结果一致. 关键词： 第一性原理 8O₁₅')" href="#">Magnéli相亚氧化钛Ti₈O₁₅ 电子结构 光学性能     

First nucleation steps of vanadium oxide thin films studied by XPS inelastic peak shape analysis

The initial states of deposition of vanadium oxide thin films have been studied by analysis of the peak shape (both inelastic background and elastic contributions) of X-ray photoemission spectra (XPS) after successive deposition experiments. This study has permitted to assess the type of nucleation and growth mechanisms of the films. The experiments have been carried out in situ in the preparation chamber of a XPS spectrometer. Thin films of vanadium oxide have been prepared on Al₂O₃ and TiO₂ by means of thermal evaporation, ion beam assisted deposition and plasma enhanced chemical vapour deposition. The thin films prepared by the first two procedures consisted of V₂O₄, while those prepared by the latter had a V₂O₅ stoichiometry. The analysis of the inelastic background of the photoemission spectra has shown that the films prepared by thermal evaporation on Al₂O₃ are formed by big particles that only cover completely the surface of the substrate when their height reaches 16 nm. By contrast, the thin films prepared with assistance of ions on Al₂O₃ or with plasma on TiO₂ consist of smaller particles that succeed in covering the substrate surface already for a height of approximately 4 nm. Thin films prepared by plasma-assisted deposition on Al₂O₃ depict an intermediate situation where the substrate is completely covered when the particles have a height of approximately 6 nm. The type of substrates, differences in the deposition procedure or the activation of the adatoms by ion bombardment are some of the factors that are accounted for by to explain the different observed behaviours.     

Effect of the crystalline constitution of TiO2 substrates on the growth of ultrathin Mo layer

Metallic molybdenum was deposited by magnetron sputtering on amorphous and (110) rutile TiO₂ substrates. An interfacial reaction between the deposited Mo and the TiO₂ substrates generating Ti^3 +, Ti^2 + oxidation states is evidenced by X-ray photoelectron spectroscopy. Our XPS data suggest, as compared to the (110) rutile substrate, a higher reactivity of the amorphous TiO₂ leading to a stronger Mo oxidation. In both cases, this reaction, leads to the formation of MoO_x nanostructures at the interfaces. The growth mechanism of the Mo deposit as a function of the crystalline constitution of the TiO₂ substrate was analyzed by processing the XPS data using the Quases ® software. The data reveal a layer-by-layer growth of the Mo deposit on the (110) rutile substrate and a Stranski–Krastanov growth on the amorphous one. We explain these different growth modes based on the TiO₂ surface reactivity and electronic structure using the Cabrera–Mott theory. This explanation is supported by Time-of-Flight Secondary Ion Mass spectrometry profiling.     

Synthesis of Ag metallic nanoparticles by 120 keV Ag− ion implantation in TiO2 matrix

TiO₂ thin film synthesized by the RF sputtering method has been implanted by 120 keV Ag^? ion with different doses (3?×?10¹⁴, 1?×?10¹⁵, 3?×?10¹⁵, 1?×?10¹⁶ and 3?×?10¹⁶ ions/cm²). Further, these were characterized by Rutherford back Scattering, XRD, X-ray photoelectron spectroscopy (XPS), UV–visible and fluorescence spectroscopy. Here we reported that after implantation, localized surface Plasmon resonance has been observed for the fluence 3?×?10¹⁶ ions/cm², which was due to the formation of silver nanoparticles. Ag is in metallic form in the matrix of TiO₂, which is very interestingly as oxidation of Ag was reported after implantation. Also, we have observed the interaction between nanoparticles of Ag and TiO₂, which results in an increasing intensity in lower charge states (Ti³⁺) of Ti. This interaction is supported by XPS and fluorescence spectroscopy, which can help improve photo catalysis and antibacterial properties.     

Influence of annealing on the structure of nanoporous oxide films on the surface of titanium‒aluminum powder alloy

Oxide films obtained during anodization of Ti?40% Al sintered powder samples in fluorine-containing electrolytes are investigated. With scanning electron microscopy and X-ray phase analysis, it is demonstrated that an X-ray amorphous nanoporous anodic oxide film is formed on the surface of the powder microparticles under optimal anodization conditions. After annealing at T = 1093 K in air and vacuum (10^?2 Pa), the oxide films are revealed to crystallize with its regular porous structure retained. The composition of the polycrystalline anodic-oxide films annealed in air is a mixture involving TiO₂ (anatase and rutile) and α- and γ-Al₂O₃ phases and Ti₂O₃ and Al₂TiO₅ traces. The vacuum annealing process makes it possible to identify TiO₂, in which anatase is the main phase, α- and γ-Al₂O₃, and Ti₂O₃ and TiO traces. However, rutile is not revealed. The presented results indicate that the application of the anodic nanostructuring of Ti?40% Al powders is promising for the obtainment of new photocatalytic active nanomaterials.     

Characterization of sprayed and sputtered thin films for lithium ion microbatteries

We have investigated the preparation of thin films of anode and cathode materials for all oxide solid state lithium ion microbatteries. Thin films of LiCoO₂ and Li_4/3Ti_5/3O₄ have been deposited by both spray pyrolysis and RF magnetron sputtering. The structural and electrochemical properties of high temperature-LiCoO₂ thin films have been determined. Spray pyrolysis prepared higher quality LiCoO₂ thin films. Both sprayed and sputtered Li_4/3Ti_5/3O₄ thin films exhibited interesting lithium intercalation capacity. However, it has been demonstrated that RF magnetron sputtering is more efficient than spray pyrolysis for optimizing the interface between Li_4/3Ti_5/3O₄ and the substrate material. Paper presented at the 3rd Euroconference on Solid State Ionics, Teulada, Sardinia, Italy, Sept. 15–22, 1996     

Ti和蓝宝石的界面反应

在超高真空中用电子束蒸发在抛光的(1102)取向的蓝宝石(α-Al₂O₃)衬底上蒸镀500nm的Ti膜,在恒温炉中退火,然后用XRD(包括一般的和小角度的X射线衍射),AES(俄歇电子谱,包括深度剖面分布和通过界面的谱形分析)和SIMS(二次离子质谱)等表面分析技术详细研究了从室温至850℃,Ti与α-Al₂O₃的固相界面反应.结果表明室温及300℃,30min退火已有反应,Al₂O_{3< 关键词：}     

Deactivation of TiO2 photocatalytic films loaded on aluminium: XPS and AFM analyses

TiO₂ films were loaded on aluminium substrates by dip-coating method. Based on cyclic photocatalytic degradation experiments using benzamide as model molecule, XPS and AFM tests, the deactivating behaviour of the samples was studied. Experiment results show that the samples with less coating times (one to four times) deactivated very quickly, while the samples coated more than five times did not lose activity. Al element was proved to segregate from substrate and diffuse into TiO₂ films during calcination and annealing treatment, existing as mixture of Al₂O₃ and Al(OH)₃ at the boundaries among TiO₂ particles. During photocatalytic reactions in aqueous phase, the transformation of Al from Al₂O₃ to Al(OH)₃ and the leaching of the latter brought out serious alternation of surface morphology to the samples coated one to three times, on whose surface Ti³⁺ and Ti²⁺ centers were also detected after six cycles of photocatalytic reactions, while fresh films and the tested films which did not deactivate possess unique +4 valence Ti. The alteration of surface morphology, together with the change of valence of surface Ti element, resulted in the deactivation encountered in this research.