FeS2多晶薄膜电子结构的实验研究

用磁控溅射方法制各纯Fe薄膜，并硫化合成FeS₂. 采用同步辐射X射线近边吸收谱与X射线光电子能谱研究了薄膜的电子结构. 结果表明，合成的FeS₂薄膜，在费米能级附近，有较强的Fe 3d态密度存在，同时，在价带谱中2—10eV处有强度较大的S 3p态密度存在；Fe的3d轨道在八面体配位场作用下分别为t_2g和e_g轨道，实验中由Fe的吸收谱计算得到两分裂能级之差为2.1eV;实验测得FeS₂价带结构中导带宽度约为2.4eV，导带上方仍存在第二能隙，其宽度约为2.8eV. 关键词： 磁控溅射 二硫化铁 X射线吸收近边结构 电子结构     

FeS2多晶薄膜电子结构的实验研究

用磁控溅射方法制各纯Fe薄膜,并硫化合成FeS2.采用同步辐射X射线近边吸收谱与X射线光电子能谱研究了薄膜的电子结构.结果表明,合成的FeS2薄膜,在费米能级附近,有较强的Fe 3d态密度存在,同时,在价带谱中2-10eV处有强度较大的S 3p态密度存在;Fe的3d轨道在八面体配位场作用下分别为t2g和eg轨道,实验中由Fe的吸收谱计算得到两分裂能级之差为2.1eV;实验测得FeS2价带结构中导带宽度约为2.4eV,导带上方仍存在第二能隙,其宽度约为2.8eV.     

过渡金属二硼化物的金属K边XAS研究

结合X射线衍射实验(XRD)和金属K边的X射线吸收谱(XAS)研究了过渡金属二硼化物(TiB₂,VB₂和CrB₂).在近边吸收区,除了主吸收峰之外,还观察到了3个弱的边前峰,它们是由于金属吸收原子的3d轨道在D6h配位场下分裂,分裂后的3个d轨道与高层金属原子4p轨道发生杂化而引起的.此外,还根据XRD实验得到的晶格参数初步拟合了金属K边EXAFS谱,得到了一些有意义的结果.     

表面热处理研究石墨及含杂质单壁碳纳米管的C 1s X射线吸收谱

用表面敏感光电子能谱全电子产额模式(TEY)对石墨及含杂质单壁碳纳米管的C 1s X射线吸收谱进行了研究.在高真空里表面退火处理后,石墨C 1s X射线吸收谱中未占据π^{*和σ*态特征峰之间的小峰消失,证实此峰不是来自于一直被认为的所谓的类自由电子态,而来自于样品表面态,即表面结构扭曲或吸附气体所引起的结构变化.而且π*和σ*峰强度有明显的变化,提示着在研究不同纳米管未占据态的态密度对比研究中,原位温度处理是关键的.我们通过对含杂质不同单壁碳纳米管的态密度对比研究来说明这种处理过程的必要性.}     

SiC表面C 1s谱最优拟合参数的研究

提出了一种新的,用未限定拟合峰位置、半高宽和峰面积的X射线光电子谱拟合方法,研究了拟合峰的数目、函数类型及背景对SiC表面C 1s谱拟合结果的影响,并与样品表面宽扫描X射线光电子谱和红外掠反射吸收谱相对照,确定了SiC表面C 1s谱的最优拟合参数,获得了与文献中数值相同的 C 1s束缚能. 为SiC及其他材料表面元素窄扫描X射线光电子谱的拟合和化学态结构的鉴定奠定了基础. 关键词： SiC X射线光电子谱 C 1s谱     

硫化锰电子结构的软X射线共振非弹性散射研究

利用软X射线共振非弹性散射谱(resonant inelastic soft X-ray scattering, RIXS)对3d过渡金属硫化物中的硫化锰(MnS)电子结构进行了研究.通过分析Mn²⁺的2p⁶3d⁵→2p⁵3d⁶→2p⁶3d⁵二次光子过程，得到了共振非弹性散射谱中的两类非弹性峰，d-d电子跃迁和电荷转移(charge-transfer)跃迁.这两部分跃迁分别共振增强于L边附近及伴随峰附近.基于Hartree-Fock方法的多重态计算分别模拟了原子近似下和立方体O_h对称群下共振非弹性散射谱及吸收谱.计算得MnS实际晶体场10Dq值介于0.80eV—0.85eV之间.对MnS和MnO CT跃迁差异的讨论表明MnS较强的CT跃迁来源于其较窄的能隙宽度. 关键词： 软X射线共振非弹性散射 软X射线吸收谱 d-d跃迁 电荷转移     

软X射线荧光吸收谱测试方法的建立与应用

提出了一种软X射线荧光吸收谱测试方法。该方法克服了软X射线荧光产率低的问题,消除了荧光自吸收效应,采用部分荧光产额模式获得了材料的软X射线近边吸收结构。使用部分荧光产额模式对钙钛矿太阳能电池的埋藏元素、催化剂的低浓度元素,以及宽禁带半导体进行软X射线近边吸收谱研究。相比全电子产额模式,基于荧光产额模式的软X射线近边吸收结构在材料体相特性、不良导体和低浓度样品测试中更具优势。     

(Fe1-xNix)2P电子结构与磁学特性的X射线近边吸收谱研究

利用X射线近边吸收谱对Fe₂P,Ni₂P及其掺杂物(Fe_1-xNi_x)₂P(x=01,025,05)中Fe,Ni,P的K边进行了研究.结合多重散射理论近边计算,讨论了金属原子不同位置格点3f,3g对近边谱特征的贡献,得出当Ni原子取代Fe原子时将优先占据Fe(3f)格点位置;根据第一性原理对能态的计算发现,不考虑磁性时不同格点P的pDOS未占据态电子结构与P-K近边吸收谱实验相符合;与考虑铁磁性Fe₂P 的DOS相比较后结果显示Fe₂P的磁性主要来源于Fe(3g)格点,铁磁性Ni₂P计算的Ni不同格点原子磁矩均接近于0,与它一般显顺磁性结论相一致. 关键词： X射线近边吸收谱 电子结构 多重散射理论 态密度     

NH_3-Ar气氛下制备的Zn_3N_2薄膜的结构和光学性能(英文)

Zn3N2是一种宽带隙半导体材料,在温度高于400°C氧化可生成p型ZnO:N,p型ZnO:N在电子学和光电子学领域有广泛的应用.在NH3-Ar气氛下,用RF磁控溅射金属Zn靶在玻璃衬底上室温制备了Zn3N2薄膜.用紫外-可见分光光度计、X射线衍射仪、X射线光电子谱分析仪、荧光分光光度计对Zn3N2薄膜的光学透过、光学吸收、结构、化学键态和光致发光进行了测量,研究了NH3分压对Zn3N2薄膜的结构和光学特性的影响.XRD分析表明Zn3N2薄膜呈现多晶结构,具有(321)择优取向,Zn3N2(321)衍射峰强度随NH3分压增加而增强.在NH3分压5%～10%制备的Zn3N2薄膜有较低透过率,透过率随NH3分压增加而提高.Zn3N2薄膜是间接带隙半导体,当NH3分压从5%变化到25%时,光学带隙从2.33eV升高到2.70eV.XPS分析表明Zn3N2薄膜在潮湿空气中容易水解.室温下Zn3N2薄膜在437nm和459nm波长出现了发光峰.     

射频磁控共溅射GaAs/SiO2纳米颗粒镶嵌薄膜的光学性质

应用射频磁控共溅射方法和真空退火方法制备了GaAsSiO2纳米颗粒镶嵌薄膜.X射线衍射实验结果表明,经高温退火的薄膜中形成了面心立方闪锌矿结构的GaAs纳米晶粒,晶粒平均直径为1.5—3.2nm.吸收光谱展示了由于强量子限域引起的1.5—2eV的吸收边蓝移.室温光致荧光(PL)光谱显示了电子重空穴激子与电子劈裂空穴激子的近紫外和紫外双PL谱峰以及深俘获态的PL谱峰.对实验吸收边蓝移量与有效质量模型的蓝移量的悬殊差别、俘获态PL谱的形成以及PL谱线的特征作了解释.应用激光Z扫描技术测量了退火温度为500℃的复合膜在非共振条件下的光学非线性,结果表明,复合膜的非线性折射率系数和非线性吸收系数都比块材GaAs相应的系数增大了5个数量级.光学非线性系数增大主要起因于强量子限域效应 关键词： 射频磁控共溅射 GaAsSiO2纳米颗粒镶嵌薄膜 光谱 激光Z扫描     

Low-temperature time-resolved vacuum UV spectroscopy of NH<Subscript>4</Subscript>H<Subscript>2</Subscript>PO<Subscript>4</Subscript> crystals

A complex investigation of the dynamics of electronic excitations in nonlinear optical crystals of ammonium dihydrophosphate NH₄H₂PO₄ was performed using low-temperature vacuum UV luminescence spectroscopy with time resolution upon selective photoexcitation by synchrotron radiation. Data on the photoluminescence decay kinetics, time-resolved photoluminescence spectra (2–6.2 eV), and time-resolved photoluminescence excitation spectra (4–24 eV) were obtained for the first time for NH₄H₂PO₄ crystals at 8 K. It is ascertained that the photoluminescence of NH₄H₂PO₄ crystals in the vicinity of 4.7 eV has intrinsic character due to the radiative annihilation of self-trapped excitons. Possible channels of generation and decay of relaxed and unrelaxed electronic excitations in NH₄H₂PO₄ crystals are discussed.     

Dielectric properties of the nanoporous MCM-41 matrix filled with the (NH4)2SO4 ferroelectric

Variations with temperature of the linear dielectric permittivity and amplitude of the third harmonic were studied for nanoporous MCM-41 matrices with 4.0-nm channel pores filled with the (NH₄)₂SO₄ ferroelectric, in comparison with bulk ammonium sulfate. The measurements were performed upon heating and cooling in the temperature range from 100 K to room temperature. A noticeable shift to low temperatures (by approximately 25 K) for the ferroelectric phase transition in the MCM-41/(NH₄)₂SO₄ nanocomposite as compared to bulk (NH₄)₂SO₄ was revealed. The temperature hysteresis observed at the phase transition in the nanocomposite was approximately 2 K which is close to that in bulk ammonium sulfate. The significant decrease of the transition temperature in nanostructured ammonium sulfate agrees with the theoretical predictions based on the Landau and Ising models of the size effect on the ferroelectric phase transition in isolated small particles.     

Electronic structure studies of Mg0.95Mn0.05Fe2−2xTi2xO4 (0x0.8)

The electronic structure of Mg_0.95Mn_0.05Fe_2−2xTi_2xO₄ (0x0.8) compound is investigated using near edge X-ray absorption fine structure, (NEXAFS) spectroscopy measurements, carried out at O K, Fe and Ti L_3,2-edges at room temperature. The O K-edge spectra indicate that the Fe 3d orbitals have been considerably modified and a new spectral feature start dominating in the pre-edge region at higher Ti doping. The Fe 2p NEXAFS spectra exhibit a mixed valent Fe²⁺/Fe³⁺ states apart from the conversion of Fe³⁺ to Fe²⁺ with the substitution of Ti ions. The Ti L_3,2-edge spectra indicate that Ti ions remain unchanged at 4+ state. These variations in the host electronic structure due to Ti substitution are consistent with the dielectric and transport properties of the material.     

Dielectric properties of (NH4)2SO4 crystals in the range of electronic excitations

Spectra of the real and imaginary parts of the pseudo‐dielectric permittivity, 〈?₁〉(E) and 〈?₂〉(E), of ferroelectric ammonium sulfate crystals, (NH₄)₂SO₄, have been measured in the range of electronic excitations 4.0 to 9.5 eV by ellipsometry using synchrotron radiation. Temperature dependences of the corresponding susceptibilities, 〈χ₁〉(T) and 〈χ₂〉(T), obtained for the photon energy E = 8.5 eV, related to excitations of oxygen p‐electrons, reveal sharp peak‐like temperature changes near the Curie point T_C = 223 K. The large temperature‐dependent increase of the imaginary part of the susceptibility χ₂(T), together with a simultaneous decrease of the real part of the susceptibility χ₁(T), take place at the phase transition. These anomalies have been ascribed mainly to the SO₄ group of the crystal structure.     

Proton Dynamics in Letovicite, (NH4)3H(SO4)2: A H and N NMR Spectroscopic Study

The improper ferroelastic phase letovicite (NH₄)₃H(SO₄)₂ has been studied by ¹H MAS NMR as well as by static ¹⁴N NMR experiments in the temperature range of 296–425 K. The ¹H MAS NMR resonance from ammonium protons can be well distinguished from that of acidic protons. A third resonance appears just below the phase transition temperature which is due to the acidic protons in the paraelastic phase. The lowering of the second moment M₂ for the ammonium protons takes place in the same temperature range as the formation of domain boundaries, while the signals of the acidic protons suffer a line narrowing in the area of T_c. The static ¹⁴N NMR spectra confirm the temperature of the motional changes of the ammonium tetrahedra. Two-dimensional ¹H NOESY spectra indicate a chemical exchange between ammonium protons and the acidic protons of the paraphase.     

Scanning transmission X‐ray microscopy probe for in situ mechanism study of graphene‐oxide‐based resistive random access memory

Here, an in situ probe for scanning transmission X‐ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To perform in situ STXM studies at the C K‐ and O K‐edges, both the RRAM junctions and the I₀ junction were fabricated on a single Si₃N₄ membrane to obtain local XANES spectra at these absorption edges with more delicate I₀ normalization. Using this probe combined with the synchrotron‐based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the O K‐edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed from ex situ transmission electron microscope studies.     

Refinement of the (NH4)3H(SO4)2 crystal structure: II. X-ray and neutron single-crystal diffraction from phase II at room temperature

The crystal of (NH₄)₃H(SO₄)₂ is of special interest due to the possible influence of ammonium ion on the series of phase transitions: I↔II↔ III↔IV↔V↔VII. Earlier, the x-ray single-crystal diffraction study of phase II of the (NH₄)₃H(SO₄)₂ crystal showed that the crystal structure of this compound had two crystallographically independent groups of the ammonium ions NH₄(1) and NH₄(2) but orientational positions of these ammonium ions were not determined exactly. The refinement of the NH₄(1) and NH₄(2) orientational positions in phase II was carried out by the x-ray and neutron single-crystal diffraction study. The analysis of difference Fourier maps of electron charge density and nuclear density suggested the possibility of disordering of NH₄(2) ammonium ions. The text was submitted by the authors in English.     

Synchrotron radiation studies of the orientation of thin silicon phthalocyanine dichloride film on HOPG substrate

Thin silicon Phthalocyanine dichloride films on HOPG were prepared and the sample was heated in the vacuum with laser.The thickness of the thin sample on HOPG was checked by X-ray photoemission spectroscopy.The orientation of the molecules in respect to the substrate plane Was investigated by measuring the silicon K-edge near edge X-ray absorption fine structure(NEXAFS).In the NEXAFS spectra of the thin sample,two clear peaks which were assigned to 1s→σ*Si-N and 1s→σ*Si-C1 appeared around 1847.2 eV and 1843.1 eV respectively.The intensities of the resonance peaks showed strong polarization dependence.A quantitative analysis of the polarization dependence revealed that the Si-N bond tended to lie down while the Si-C1 bond was out of the molecular plane.     

Raman spectra of crystalline double sulphates Part II. Ammonium double sulphates

Raman spectra of single crystals of (NH₄)₂M(SO₄)₂·6 H₂O whereM=Mg, Zn Ni or Co have been recorded using λ 2537 excitation. Interesting results concerning the substitution of the divalent atoms in the double sulphate lattice on the sulphate and ammonium frequencies are observed. The spectra of these double sulphates are discussed in the light of the known crystal structure details and in relation, to the spectra of the corresponding potassium double sulphates, reported recently by the author. The Raman spectrum of NaNH₄SO₄·2 H₂O has also been recorded for the first time and the results obtained are also included.     

吡嗪分子在硅(100)面吸附构型的XPS和NEXAFS谱理论研究

本文利用X射线谱研究了吡嗪(C₄H₄N₂)分子共价吸附于硅(100)面的几种吸附构型的几何结构和电子结构. 利用密度泛函理论结合团簇模型，对预测的吸附结构的碳K壳层(1s)X射线光电子能谱(XPS)和近边X射线吸收精细结构(NEXAFS)谱进行了模拟. 计算结果阐明了XPS和NEXAFS谱与不同吸附构型的对应关系. 与XPS谱相比，NEXAFS谱对所研究的吡嗪/硅(100)体系的结构有明显的依赖性，可以很好地用于结构鉴定. 根据碳原子的分类，研究了在NEXAFS光谱中不同化学环境下碳原子的光谱成分.