SiC表面C 1s谱最优拟合参数的研究

提出了一种新的，用未限定拟合峰位置、半高宽和峰面积的X射线光电子谱拟合方法，研究了拟合峰的数目、函数类型及背景对SiC表面C 1s谱拟合结果的影响，并与样品表面宽扫描X射线光电子谱和红外掠反射吸收谱相对照，确定了SiC表面C 1s谱的最优拟合参数，获得了与文献中数值相同的 C 1s束缚能. 为SiC及其他材料表面元素窄扫描X射线光电子谱的拟合和化学态结构的鉴定奠定了基础. 关键词： SiC X射线光电子谱 C 1s谱

The study of optimal fitting parameter for C 1s spectra of SiC surface

X-ray photoelectron spectroscopy (XPS)is highly adapt to characterize the chemical states of the surface of SiC samples. However, there were notable discrepancies in results for C ls spectra from fitting XPS data reported by using the method of fixed number and peak values (or full width half maximum) of peaks in different previous papers. In this paper, a novel XPS fitting method is proposed by adopting variable peak values (full width half maximum) and peak areas of peaks, and then the effects of number of peaks, functional types of peak and background on fitting results of the C 1s spectroscopy for SiC surface have been investigated. Comparing the XPS wide-scan spectroscopy and infrared glancing reflection absorption spectroscopy, optimal fitting parameters and fitting result for C 1s spectroscopy of SiC surface are determined. The binding energies of C 1s photoelectron spectroscopy obtained in this paper have the same values as that reported. All this establishes the basis for fitting narrow scan spectroscopy of elements and the investigation of chemical state structure of the surface of SiC and other materials.