射频等离子体增强化学气相沉积SiNx薄膜的研究

采用射频等离子体增强化学气相沉积技术,以N2和SiH4作为反应气体,在P型硅基片上进行SiNx薄膜的沉积.使用椭偏仪对薄膜厚度和光学常量进行了测量, 用傅里叶变换红外光谱仪对SiNx薄膜的化学键合结构进行了分析.研究了基片温度、射频功率以及N2和SiH4的气体流量比率等实验工艺参量对薄膜沉积速率和光学常量的影响.结果表明,射频等离子体增强化学气相沉积技术沉积的SiNx薄膜是低含氢量的SiNx薄膜,折射率在1.65~2.15之间,消光系数k在0.2~0.007之间,当SiNx薄膜为富氮时k≤0.01,最高沉积速率高达6.0 nm/min,N2和SiH4气体流量比率等于10是富硅和富氮SiNx薄膜的分界点.     

射频磁控反应溅射氮氧化硅薄膜的研究

利用SiOxNy薄膜光学常数随化学计量比连续变化的特性,给出了制备折射率连续可调的SiOxNy薄膜的实验条件。用磁控反应溅射法制备了不同氮氧比的SiOxNy薄膜。研究了不同气流比率条件下薄膜光学常数、化学成分及溅射速率等的变化。用UV-VIS光谱仪测试了透射率曲线,利用改进的单纯型法拟合透射率曲线计算得到了折射率和消光系数。测试了红外傅立叶光谱(FTIR)曲线和X光光电子能谱(XPS)分析了薄膜成分的变化。实验表明薄膜特性与N2／O2流量比率密切相关,通过控制总压和改变气体流量比可控制SiOxNy薄膜的折射率n从1．92到1．46连续变化,应用Wemple-DiDomenico模型计算出光子带隙在6．5eV到5eV之间单调变化。     

Calculation of Elastic Constants of Ag/Pd Superlattice Thin Films by Molecular Dynamics with Many-Body Potentials

The calculation of elastic constants of Ag/Pd superlattice thin films by molecular dynamics simulations with many-body potentials is presented. It reveals that the elastic constants C11 and C55 increase with decreasing modulation wavelength A of the films, which is consistent with experiments. However, the change of C11 and C55 with A is found to be around the values determined by a rule of mixture using bulk elastic constants of metals. No supermodulus effect is observed and it is due to cancellation between enhanced and reduced contributions to elastic constants from Ag and Pd layers subjected to compressive and tensile strains, respectively.     

金属薄板弹性各向异性检测

当平面声波入射到液体中的金属薄板上时，透射系数将随声波入射角变化，根据这一规律，能够准确地测定声波入射面与金属薄板交线方向上金属板材料的弹性常数，测得金属薄板面内不同方向的弹性常数，对金属薄板弹性各向异性情况将有一清蜥的认识，由于测试过程采用微机控制、数据采集和处理，实现了各向异性测量的全自动化，该方法测试时间短、所需样品小且加工方便，并可测试金属薄板弹性各向异性的均匀度。     

Ca3NbGa3Si2O14晶体的介电和压电特性

利用Y切和(yxl)30°切两种样品测量了Ca3NbGa3Si2O14晶体的介电、压 电和部分弹性参数.计算了(yxl)θ切型相关压电常数随切角的变化.与La3Ga5SiO14晶体相比，Ca3NbGa3Si2O14晶体具有更优良的压电性能，其压电常数 d11=7.93×10-12C/N，d14=-5.88×10-12C/N. 关键词： Ca3NbGa3Si2O14晶体 介电常数 压电常数     

Measurement of the elastic constants of a columnar SiC thin film

The technique of resonant ultrasound spectroscopy was used to measure the elastic properties of a polycrystalline cubic silicon carbide (3C-SiC) thin film. The film, grown on a silicon (100) substrate, was 1.69 microns thick with columnar crystalline grains and a (111) texture. The substrate with the film was placed between two transducers and the resonant frequencies were measured; measurements were repeated after selective, timed dry etching of the film, allowing a determination of the elastic constants of the film alone. The film elastic constants, c(11)=371 and c(12)=146 GPa, were within a few percent of the literature values (c(11)=386, c(12)=136 GPa) of crystalline 3C-SiC. However, the film elastic constant c(44), 111 GPa, was significantly smaller than the bulk literature value, 254 GPa. For the film, c44 approximately (c(11)-c(12))/2, indicating that, quite unlike a bulk 3C-SiC crystal, the thin film is elastically isotropic.     

氮化硼薄膜的红外光谱研究

用磁控溅射法制备六角氮化硼薄膜,在衬底温度、衬底偏压、工作气压等条件一定的情况下改变工作气体(氮气+氩气)中氮气的比例,以制备高质量的六角氮化硼薄膜,薄膜以红外吸收光谱标识。实验结果表明,工作气体中氮气的比例对制得的六角氮化硼薄膜有很大影响,在氮气比例为20%时得到理想的六角氮化硼薄膜。     

The determination of stresses in thin films; modelling elastic grain interaction

X-ray diffraction is frequently employed for the analysis of mechanical stresses in polycrystalline specimens. To this end, suitable so-called diffraction elastic constants are needed for determining the components of the mechanical stress tensor from measured lattice strains. These diffraction elastic constants depend on the single-crystal elastic constants of the material considered and the so-called grain interaction, describing the distribution of stresses and strains over the crystallographically differently oriented crystallites composing the specimen. Well-known grain interaction models, as due to Voigt, to Reuss, to Neerfeld and Hill and to Eshelby and Kröner, may be applied to bulk specimens, but they are generally not suitable for thin films. In this paper, an average 'effective' grain interaction model is proposed that consists of a linear combination of basic extreme models including new models specially suited to thin films. Experimental verification has been achieved by X-ray diffraction strain measurements performed on a sputter-deposited copper film. This is the first time that anisotropic grain interaction has been analysed quantitatively.     

Resonant-ultrasound spectroscopy for studying annealing effect on elastic constant of thin film

In this paper, we study the elastic property of thin films using resonant-ultrasound spectroscopy (RUS). RUS determines the elastic constants of a solid from its resonance frequencies of free vibration. There were two problems to be solved for applying RUS to thin films: accurate measurement of the resonance frequencies and mode identification of each resonance frequency. We solve these problems using the tripod needle transducers and the laser-Doppler interferometry (LDI). In this paper, we describe the RUS/LDI measurement setup we developed, and show the relationship between the elastic constant and annealing temperature for Cu thin films. Then, we discuss the effects of recrystallization and recovery on the elastic constant referring the X-ray diffraction measurement.     

Study of the elastic constants in a La0.6Sr0.4MnO3 film by means of laser-generated ultrasonic wave method

Two dimensional (2D) displacement field of the laser-generated ultrasonic wave is detected in a two-layered structure of La(0.6)Sr(0.4)MnO(3) (LSMO)/MgO system by means of the optical difference detection method. In order to obtain the elastic constants of the La(0.6)Sr(0.4)MnO(3) thin film, the displacement field of the laser-generated ultrasonic wave for the La(0.6)Sr(0.4)MnO(3)/MgO system is analyzed with finite element method (FEM). We further compare the theoretical simulations with the experimental results, and the elastic constants for the LSMO film, i.e., the Young's modulus and Poisson ratio, are obtained.     

Dynamic model of micropolar elastic thin plates with independent fields of displacements and rotations

A general model of dynamic bending of isotropic micropolar elastic thin plates with independent fields of displacements and rotations is presented. The model has been justified asymptotically based on the solutions for special cases subject to simplifying assumptions. The model incorporates transverse shear deformations. Neglecting transverse shear, a model of the dynamics of micropolar elastic thin plates is also constructed. Then, we study free and forced oscillations and derive the natural frequencies, the amplitudes of the forced oscillations and the resonance conditions for micropolar elastic hinge-supported rectangular and circular plates. Finally, the basic characteristic features of micropolar plates are numerically analysed for different values of various elastic and inertial constants of the micropolar material.     

Study of phase transformation and elastic properties of ThX (X = N,P, As and Sb) under high-pressure

An improved interaction potential model (IIPM) has been formulated to theoretically predict the pressure induced phase transition, elastic properties and thermophysical properties of thorium monopnictides (ThX; X = N, P, As and Sb). The phase transition pressures and volume drop obtained from this model show a better agreement with the available experimental than theoretical results. We have achieved elastic moduli, anisotropy factor, Poisson's ratio, Kleinman parameter, shear and stiffness constants on the basis of the calculated elastic constants. To know the anharmonic properties, we have also computed the third-order elastic constants, first-order pressure derivatives of second-order elastic constants and thermophysical quantities. Our results are in reasonable agreement with available measured and others reported data which supports the validity of model.     

Measurements of elastic constants in thin films of colossal magnetoresistance material

Measurements of elastic constants of strained 200 and 400 nm thin films, as well as unstrained samples, of the colossal magnetoresistance (CMR) material La0.67Ca0.33MnO3 are presented. Since the peak resistance temperature of a strained CMR film decreases as the film thickness decreases, it is of interest to see if features in the elastic constants, reflecting structural or magnetic changes, follow the peak resistance temperature. It is observed that features in the elastic constants appear not only at the peak resistance temperatures of the CMR samples, but also at a temperature about 17 K higher. A new technique, thin-film resonant ultrasound spectroscopy, was used to make the measurements.     

Carbon Nitride Thin Films Deposited by Plasma Assisted Nd∶YAG Laser Ablation of Graphite in N2+H2 Atmosphere

Carbon nitride thin films are deposited on silicon wafers by 532 nm Nd∶YAG laser ablation of graphite in the N2+H2 atmosphere assisted by a dc glow discharge plasma at a higher gas pressure of about 4.0 kPa. The properties of the thin films are investigated by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and X-ray diffraction (XRD). The results show that the deposited films are composed of α-C3N4, β-C3N4 phase and have the N/C atomic ratio of 2.01. The optical emission spectroscopy (OES) studies indicate that the introduction of a dc glow discharge and the adoption of a higher gas pressure during the film deposition are favorable to the net generation of the atomic N, CN radicals and N+2 in B2Σ+u excited state in the plasma, which are considered to play a major role in the synthesis of carbon nitride.     

Carbon Nitride Thin Films Deposited by Plasma Assisted Nd:YAG Laser Ablation of Graphite in N2+H2 Atmosphere

Carbon nitride thin films are deposited on silicon wafers by 532 nm Nd:YAG laser ablation of graphite in the N2+H2 atmosphere assisted by a dc glow discharge plasma at a higher gas pressure of about 4.0 kPa. The properties of the thin films are investigated by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and X-ray diffraction (XRD). The results show that the deposited films are composed of α-C3N4, β-C3N4 phase and have the N/C atomic ratio of 2.01. The optical emission spectroscopy (OES) studies indicate that the introduction of a dc glow discharge and the adoption of a higher gas pressure during the film deposition are favorable to the net generation of the atomic N, CN radicals and N+2 in B2Σ+u excited state in the plasma, which are considered to play a major role in the synthesis of carbon nitride.     

Non-linear flexural waves in thin layers

Non-linear flexural waves in thin plates or layers have been analyzed in this paper. The equation of motion of the plate is derived assuming that the motion is antisymmetric about the mid-plane of the plate and that the plate is thin. The plate is considered to be elastic. The Von Karman non-linear strains and Landau elastic constants have been used to model geometric and material non-linearities, respectively. An asymptotic analysis of wave motion is presented using the method of multiple scales. Evolution equations are derived for small amplitude traveling flexural elastic waves. Numerical results show waveform distortion, amplitude amplification, and harmonic generation.     

Optical characteristics and parameters of a gas discharge plasma based on a mixture of mercury dibromide vapor and helium

We present the results of studies of the optical characteristics and parameters of a gas discharge plasma produced by a barrier discharge at atmospheric pressure, based on a mixture of mercury dibromide vapor and helium (the working medium of a small (emitting area 8 cm²) exciplex gas discharge emitter). An average emission power of 70 mW (λ_max = 502 nm) was achieved for pump pulse repetition frequency 6 kHz, voltage pulse amplitude 2.3 kV, and current pulse amplitude 8 A of duration ~100 nsec. We established the plasma parameters: the electron energy distribution functions, the transport characteristics, the discharge power losses per unit pressure going toward electron processes, the electron concentration and temperature, and also the rate constants for processes of elastic and inelastic scattering of electrons by the components of the working mixture as a function of the parameter E/N, where E is the electric field strength and N is the total concentration of mercury dibromide molecules and helium atoms.     

The bond force constants and elastic properties of boron nitride nanosheets and nanoribbons using a hierarchical modeling approach

A hierarchical approach bridging the atomistic and nanometric scales is used to compute the elastic properties of boron nitride nanosheets and nanoribbons, examining the effect of sheet size, aspect ratio and anisotropy. The approach consists in obtaining the bond force (force field) constants by dedicated computations based on density functional theory (DFT) and using such constants as input for larger scale structural models solved by finite element analysis (FEA). The bond force constants calculated by DFT are 616.9 N/m for stretching, 6.27×10⁻¹⁹ Nm/rad² for in-plane rotation and 1.32×10⁻¹⁹ Nm/rad² for dihedral rotation. Using these constants, the elastic properties of boron nitride nanosheets and nanoribbons predicted by FEA are almost independent of the sheet size, but strongly dependent on their aspect ratio. The sheet anisotropy increases with increased aspect ratio, with nanoribbons of aspect ratios of 10 exhibiting a ratio of elastic moduli along both in-plane directions of 1.7.     

Effective dielectric and photoelastic tensor components in thin layered superlattices

The effective photoelastic constants of a superlattice composed of thin alternating layers of orthorhombic symmetry are calculated as functions of dielectric, elastic and photoelastic constants of the constituents. In a preliminary step to this calculation, we also obtain the effective dielectric tensor for any symmetry of the layers. It is shown that appropriate combinations of these effective constants are arithmetic averages of the corresponding quantities in the constituents, each layer having a weight equal to its relative thickness.     

椭偏透射法测量氢化非晶硅薄膜厚度和光学参数

针对多角度椭偏测量透明基片上薄膜厚度和光学参数时基片背面非相干反射光的影响问题,报道了利用椭偏透射谱测量等离子增强化学气相沉积法(PECVD)制备的a-Si:H薄膜厚度和光学参数的方法,分析了基片温度T_s和辉光放电前气体温度T_g的影响.研究表明,用椭偏透射法测量的a-Si:H薄膜厚度值与扫描电镜(SEM)测得的值相当,推导得到的光学参数与其他研究者得到的结果一致.该方法可用于生长在透明基片上的其他非晶或多晶薄膜. 关键词： 椭偏测量 透射法 光学参数 氢化非晶硅薄膜