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1.
"点石成金?"--碳结构超高压物理力学   总被引:1,自引:0,他引:1  
张斌  郭万林  戴意涛 《物理》2005,34(7):498-502
文章介绍了石墨和碳纳米管在超高压和/或纳米压痕下的层间sp^2-sp^3键转化、软硬相转换、纳米硬度等研究进展.通过量子力学和分子动力学建模分析研究,发现超高压下石墨和碳纳米管存在软相向硬相转变的双相机制,给出了超高压获取石墨和碳纳米管超硬相的条件.理论计算与实验结果吻合很好,并能合理地解释有关石墨和碳纳米管超高压实验中看似矛盾的各种实验现象.提出了碳结构超高压物理力学概念,可为超高压碳相关物质相变、物化性质调控提供理论方法.  相似文献   

2.
HL-2A装置的第一壁由石墨构件、Cu偏滤器靶板和AISI 304LN不锈钢真空室内壁组成。石墨构件总重量为44kg,覆盏面积为2.80,覆盖率为2.2%。由于HL-2A装置所用石墨件材料均为历经长期托卡马克实验和长期暴露大气的石墨材料,因此石墨构件的处理效果显得更为重要。介绍了EK98、SMF-800石墨材料、ASDEX装置用CFC、国产CFC的研究结果和HL-2A装置第一壁石墨材料预处理及其结果。  相似文献   

3.
本实验建立了钯-抗坏血酸基体改进剂平台石墨炉原子吸收光谱法测定贻贝中砷的方法。研究了基体改进剂氯化钯、抗坏血酸用量对测定的影响,比较了氯化钯-抗坏血酸、氯化钯、硝酸镍三种基体改进剂及平台石墨管、普通石墨管在测定贻贝中砷的灵敏度。方法的相对标准偏差为3.2%,回收率在97.8%—107.4%之间,检出限为12.0ng/mL。  相似文献   

4.
本实验建立了钯-抗坏血酸基体改进剂平台石墨炉原子吸收光谱法测定贻贝中砷的方法。研究了基体改进剂氯化钯、抗坏血酸用量对测定的影响,比较了氯化钯-抗坏血酸、氯化钯、硝酸镍三种基体改进剂及平台石墨管、普通石墨管在测定贻贝中砷的灵敏度。方法的相对标准偏差为3.2%,回收率在97.8%-107.4%之间,检出限为12.0ng/mL。  相似文献   

5.
 选取两种不同成分的石墨材料(普通石墨和掺铜石墨)分别设计制作了用于电子显微镜实验的阴极样品和用于重频长脉冲高功率微波产生实验的阴极,并开展了初步实验研究。实验结果表明:掺铜石墨与普通石墨在微观结构方面存在明显不同,且掺铜石墨阴极在发射性能、微波脉冲宽度和微波脉冲后沿离散性等方面可能优于普通石墨阴极,但优势并不明显,还待在以后的实验中进一步验证。  相似文献   

6.
用扫描隧道显微镜研究了530keV—4.5MeV Au离子轰击高定向石墨所产生的表面孤立损伤,并对表面小丘状损伤的线度进行了测量和统计.利用非线性损伤的热峰模型对重离子轰击石墨表面损伤的线度进行了计算,得到了与实验数据较为符合的理论结果.并对重离子轰击石墨表面损伤的产生机理作了探讨. 关键词:  相似文献   

7.
在SMF-800 石墨第一壁化学腐蚀温度特性的实验研究基础上,进一步测试了G3 石墨、SMF-800 高纯石墨和硼化石墨,以及SiC涂层等在1.3μA/3keV 氘离子束轰击下化学腐蚀的温度特性。从中优选出C2B10H12 氦辉光放电法制取的SMF-800 石墨硼化层,它具有最佳的抗化学腐蚀性能。其CD4 产额较SMF-800 高纯石墨的降低一个数量级以上,CD4 产额峰值温度下移至650K附近。用小角度转动样品法,初步观察了氘离子束轰击下石墨释放CD4 的角分布特性,为托卡马克先进偏滤器实验中确立CD4 辐射区的定位及其控制等可行性进行了探索  相似文献   

8.
实验发现,通过真空热处理碳化硅纳米粉末可以获得巴基葱.透射电子显微镜和高分辨电子显微镜观测表明,当碳化硅完全分解时,形成空心准球状颗粒和葱状石墨颗粒;当碳化硅分解不完全时,形成碳包裹碳化硅结构,该包裹层由准同心石墨壳层构成.由实验结果知,认为平面结构是石墨的最稳定形式的传统观点是值得讨论的  相似文献   

9.
基于第一性原理计算,研究了单壁锯齿型和扶手型石墨炔管的几何结构、电子结构以及杨氏模量.计算表明:石墨炔管是一类具有一定能隙的直接带隙半导体管,其带隙在0.4~1.3eV的能量范围,且随管径的增大而变小.而石墨炔管的杨氏模量在0.44~0.50Tpa区间变化.对于锯齿型石墨炔管,其杨氏模量随着半径的增大而变小而锯齿型石墨炔管的杨氏模量随其半径的增大而增大.  相似文献   

10.
再结晶石墨对金刚石成核的影响   总被引:2,自引:0,他引:2       下载免费PDF全文
 本文结合实验现象,分析了在合成初期,碳源在溶剂-触媒金属中的分散,溶解及形成再结晶石墨的过程。并根据再结晶石墨与金刚石成核量的实验结果,初步定性地研究了膜生长法中,再结晶石墨对金刚石成核的影响。  相似文献   

11.
Scanning tunneling microscopy (STM) was used to study the surface structures of dry-prepared and di-chloroethane-treated HOPG samples. Both triangular and honeycomb structures were simultaneously observed with the same tip at room temperature around a strand (grain boundary) on the HOPG surface. This observation did not support the tip effect in STM imaging explanation for HOPG in literature. A general layer-sliding model was utilized to explain the experimental results: sliding of the HOPG topmost layer was used to explain the origins of the triangular and honeycomb structures, and molecule intercalation into inter-layer spacing between the first and second layers of HOPG induced inhomogeneous deformation of the HOPG topmost layer that accordingly generated the Moiré patterns of the HOPG sample in di-chloroethane.  相似文献   

12.
纳米云纹法实验研究   总被引:8,自引:4,他引:4  
结合原子力显微镜技术提出了一种新型纳米云纹方法 ,并应用该方法进行纳米范围的变形。实验中选用原子力显微镜显示屏的扫描线做为参考栅 ,云母和高纯定向石墨的晶格结构做为试件。对纳米云纹形成原理及测量方法进行了详尽讨论。运用该方法对强脉冲激光辐照激光照射之后云母试样的剩余变形进行测量研究。成功的实验结果表明这种方法是可行性的 ,可望在纳米力学行为研究中获得广泛应用。  相似文献   

13.
Highly oriented pyrolytic graphite (HOPG) was scribed by pulsed laser beam to produce square patterns. Patterning of HOPG surface facilitates the detachment of graphene layers during contact printing. Direct HOPG-to-substrate and glue-assisted stamp printing of a few-layers graphene was compared. Printed graphene sheets were visualized by optical and scanning electron microscopy. The number of graphene layers was measured by atomic force microscopy. Glue-assisted stamp printing allows printing relatively large graphene sheets (40×40 μm) onto a silicon wafer. The presented method is easier to implement and is more flexible than the majority of existing ways of placing graphene sheets onto a substrate.  相似文献   

14.
本文详细讨论了试件在空间六个自由度中产生刚体运动时所形成的云纹图特性,定量地分析了各种刚体运动形式对云纹干涉法的影响。经分析表明:在用云纹干涉法测量变形位移场时,只有当试件绕坐标轴刚体转动时才会影响所测变形位移场。  相似文献   

15.
Scanning tunneling spectroscopy (STS) measurements were made on surfaces of two different kinds of graphite samples, Kish graphite and highly oriented pyrolytic graphite (HOPG), at very low temperatures and in high magnetic fields. We observed a series of peaks in the tunnel spectra associated with Landau quantization of the quasi-two-dimensional electrons and holes. A comparison with the calculated local density of states at the surface layers allows us to identify Kish graphite as bulk graphite and HOPG as graphite with a finite thickness of 40 layers. This explains the qualitative difference between the two graphites reported in the recent transport measurements which suggested the quantum-Hall effect in HOPG. This work demonstrates how powerful the combined approach between the high quality STS measurement and the first-principles calculation is in material science.  相似文献   

16.
The electrochemical reactions of highly oriented pyrolytic graphite (HOPG) bulk and powder electrodes in 1 M LiPF6 1:1 EC/DMC solution were investigated and the results show that the intercalation reaction of lithium ion into HOPG electrode occurs only at the edge plane and SEI formation reaction on the basal plane is negligible in comparison with that on the edge plane. The active surface area of HOPG powder electrode could be deduced by comparing the peak area (consumed charge for SEI formation) at potential of 0.5 V on voltammograms with that of bulk HOPG edge electrode. The diffusion coefficients of lithium ion in HOPG bulk layers and in HOPG powder was for the first time measured by use of electrochemical impedance spectra and potential step chronamperameter methods. It was found that the diffusion coefficients of lithium in HOPG were in the range of 10−11-10−12 cm2 s−1 for the lithium-HOPG intercalation compounds at potentials from 0.2 (vs. Li/Li+) to 0.02 V, decreasing with the increase of lithium intercalation degree. A good agreement was obtained between the results from bulk and powder HOPG electrodes by electrochemical impedance spectra method.  相似文献   

17.
Superperiodic patterns were observed by STM on two kinds of finite-sized graphene sheets. One is nanographene sheets inclined from a highly oriented pyrolitic graphite (HOPG) substrate and the other is a several-layer-thick graphene sheets with dislocation-network structures against a HOPG substrate. As for the former, the in-plane periodicity increased gradually in the direction of inclination, and it is easily changed by attachment of a nanographite flake on the nanographene sheets. The oscillation pattern can be explained by the interference of electron waves confined in the inclined nanographene sheets. As for the latter, patterns and their corrugation amplitudes depended on the bias voltage and on the terrace height from the HOPG substrate. The interference effect by the perturbed and unperturbed waves in the overlayer is responsible for the patterns whose local density of states varies in space.  相似文献   

18.
We have observed high resolution 13C NMR spectra in k-intercalated stages 2, 3, 4 and 6 HOPG compounds. The sample was a block itself or sliced one of HOPG. From T1T of each resolved line we obtained a distribution of density of states N(EF) at the Fermi level among the graphite layers.  相似文献   

19.
报道了单晶石墨、多晶石墨电导行为的差异.在8.15T磁场下,4.5K处单、多晶石墨的正磁电阻效应分别为69400%,170%,同时在0T,8T磁场作用下,多晶石墨的电导行为呈现类绝缘体型性质,但在单晶石墨中我们发现了与磁场相关的类半金属-绝缘体型转变,通过分析,我们认为:单、多晶石墨电导行为存在较大差异的原因可能来源于库仑相互作用在高定向热解石墨中变得不可忽视,而多晶石墨样品却存在晶界散射. 关键词: 半金属石墨 类半金属-绝缘体型转变  相似文献   

20.
We report the extraordinarily large positive magnetoresistances (MR, 69400% at 4.5K under a magnetic field of 8.15 T), de Hass-van Alphen oscillations effect at 10 K and the semimetal-Jnsulator-like transition in a wide range of temperature in highly oriented pyrolitic graphite (HOPG). Besides a dominating ordinary MR (OMR) mechanism in the free-electron mode, it is realized from qualitative analysis that the Coulomb interacting quasiparticles within graphite layers play some roles. However it is difficult to associate the transition with the simple OMR theory. In order to investigate the possible origins of the transition, further analysis is carried out. It is revealed that the magnetic-field-induced behaviour is responsible for the semimetal-insulator-like transitions in HOPG.  相似文献   

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