Preparation and Luminescence Characteristics of Ca3Y2（BO3）4：Eu^3＋ Phosphor

Ca3Y2 （BO3）4：Eu^3＋ phosphor is synthesized by high temperature solid-state reaction method, and the Iuminescence characteristics are investigated. The emission spectrum exhibits two strong red emissions at 613 and 621 nm corresponding to the electric dipole ^5 Do- ^7F2 transition of Eu^3＋ under 365 nm excitation, the reason is that Eu^3＋ substituting for Y^3＋ occupies the non-centrosymmetric position in the crystal structure of Ca3 Y2 （BO3）4. The excitation spectrum for 613 nm indicates that the phosphor can be effectively excited by ultraviolet （UV） （254 nm, 365nm and 400nm） and blue （470nm） light. The effect of Eu^3＋ concentration on the emission intensity of Ca3 Y2 （BO3）4 ：Eu^3＋ phosphor is measured, the result shows that the emission intensities increase with increasing Eu^3＋ concentration, then decrease. The CIE colour coordinates of Ca3Y2 （BO3）4：Eu^3＋ phosphor is （0.639, 0.357） at 15mol% Eu^3＋.     

Luminescent Characteristics of LiSrBO3：Eu3＋ Phosphor for White Light Emitting Diode

LiSrBO3 ：Eu3＋ phosphor is synthesized by a high solid-state reaction method, and its luminescent characteristics are investigated. The emission and excitation spectra of LiSrBO3：Eu3＋ phosphors exhibit that the phosphors can be effectively excited by near ultraviolet （401 nm） and blue （471 nm） light, and emit 615nm red light. The effect of Eua＋ concentration on the emission spectrum of LiSrBO3：Eu3＋ phosphor is studied; the results show that the emission intensity increases with increasing Eu3＋ concentration, and then decreases because of concentration quenching. It reaches the maximum at 3mol%, and the concentration self-quenching mechanism is the dipoledipole interaction according to the Dexter theory. Under the conditions of charge compensation Li＋, Na＋ or K＋ incorporated in LiSrBO3, the luminescent intensities of LiSrBO3 ：Eua＋ phosphor are enhanced.     

Green Eu-doped Ba3Si6O12N2 phosphor for white light-emitting diodes: Synthesis, characterization and theoretical simulation

The Eu²⁺-doped Ba₃Si₆O₁₂N₂ green phosphor (Eu_xBa_3−xSi₆O₁₂N₂) was synthesized by a conventional solid state reaction method. It could be efficiently excited by UV-blue light (250-470 nm) and shows a single intense broadband emission (480-580 nm). The phosphor has a concentration quenching effect at x=0.20 and a systematic red-shift in emission wavelength with increasing Eu²⁺ concentration. High quantum efficiency and suitable excitation range make it match well with the emission of near-UV LEDs or blue LEDs. First-principles calculations indicate that Ba₃Si₆O₁₂N₂:Eu²⁺ phosphor exhibits a direct band gap, and low band energy dispersion, leading to a high luminescence intensity. The origin of the experimental absorption peaks is clearly identified based on the analysis of the density of states (DOS) and absorption spectra. The photoluminescence properties are related to the transition between 4f levels of Eu and 5d levels of both Eu and Ba atoms. The 5d energy level of Ba plays an important role in the photoluminescence of Ba₃Si₆O₁₂N₂:Eu²⁺ phosphor. The high quantum efficiency and long-wavelength excitation are mainly attributed to the existence of Ba atoms. Our results give a new explanation of photoluminescence properties and could direct future designation of novel phosphors for white light LED.     

Photoluminescence in GdVO4:Bi3+, Eu3+ red phosphor

The doubly doped (Bi³⁺ and Eu³⁺) GdVO₄ powder is synthesized by hydrolyzed colloid reaction (HCR) technique and formation of material is confirmed by XRD measurement. Surface morphology has been studied by SEM measurement and the result shows uniform surface morphology. The average particle size observed by SEM is about 1 7m. The Fritsch particle sizer is used to study the particle size distribution. It distributes from O.15 to 3.57 7m. The small particle size (less than 5 7m) and the narrow particle size distribution, are the necessary requirements of good phosphor material. Photoluminescence result shows a narrow emission line of Eu³⁺ ion (4 nm FWHM) at 618 nm. The Eu³⁺ emission intensity is enhanced by a factor of five with the addition of small amount of Bi³⁺. The emission bands of VO₄^3- and Bi³⁺ partially overlap with the excitation band of Eu³⁺. The process of energy transfer from Bi³⁺ to Eu³⁺ is discussed here. The energy transfer probability is strongly dependent upon the Bi³⁺ and Eu³⁺ concentrations, with a maximum for 0.2 mol % of Bi³⁺ and 3 mol % of Eu³⁺. It drastically decreases for higher concentrations. For photoluminescent applications, the quantum efficiency (QE) of a phosphor material is an important parameter. The QE of GdVO₄:Bi,Eu(0.2,3) is 76%. The GdVO₄:Bi,Eu(0.2,3) material is proposed as an efficient photoluminescent phosphor.     

Synthesis of Y2Si2O7:Eu nanocrystal and its optical properties

Nanocrystalline Y₂Si₂O₇:Eu phosphor with an average size about 60 nm is easily prepared using silica aerogel as raw material under ultrasonic irradiation and annealing temperature at 300-600 °C and this nanocrystalline decomposes into Y₂O₃:Eu and silica by heat treatment at 700-900 °C. The excitation broad band centered at 283 and 254 nm results from Eu³⁺ substituting for Y³⁺ in Y₂Si₂O₇ and Y₂O₃/SiO₂, respectively. Compared with Y₂O₃:Eu/SiO₂ crystalline, the PL excitation and emission peaks of Y₂Si₂O₇:Eu nanocrystalline red-shift and lead to the enhance of its luminescence intensity due to the different chemical surroundings of Eu³⁺ in above nanocrystallines. The decrease of PL intensity may be ascribed to quenching effect resulting from more defects in Y₂O₃:Eu/SiO₂ crystalline.     

Luminescence Spectra of YGG：RE^3＋, Bi^3＋ （RE = Eu and Tb） and Energy Transfer from Bi^3＋ to RE^3＋

We investigate the luminescence properties of Bi^3＋ and RE^3＋ （RE = Tb or Eu） in a Y3Ga5O12 （YGG） host system. The additional doping of Bi^3＋ can enhance the luminescence of Th^3＋ or Eu^3＋ in this host. Energy transfer from Bi^3＋ to Tb^3＋ and Eu^3＋ is observed and the mechanism of energy transfer is investigated. Mechanism of energy transfer can be explained as electric multipole interaction since the Bi^3＋ emission band and Tb^3＋ or Eu^3＋ excitation band overlaps and the Bi^3＋ emission intensity decreases while the intensity of Tb^3＋ or Eu^3＋ increases with the increase of Tb^3＋ or Eu^3＋ concentration. Therefore, Bi^3＋ ion is a kind of efficient sensitizer to the Tb^3＋ and Eu^3＋ activators in the Y3Ga5O12 host.     

Temperature Dependence of the Fluorescence Emission Intensity of Eu/TiO2 Nanocrystals

The samples of europium ions doped titanium dioxide （Eu^3＋/TiO2） nanocrystals are synthesized by a modified sol-gel method with hydrothermal treatment. The x-ray diffraction and scanning electron microscopy are used to characterize the sample. The temperature-dependent fluorescence emission effect of Eu^3＋-doped samples is investigated. It is found that under the excitation of 514.5nm light, the emission intensity of Eu^3＋ reaches a maximum value at 450K among various Eu^3＋ dopant concentrations in Eu^3＋ /TiO2 nanocrystals. The variation of the emission intensity may be attributed to the photon-assist absorption and the temperature-quenching effect.     

Eu red long afterglow in Y2O2S:Ti, Eu phosphor through afterglow energy transfer

Eu,Ti co-doped Y₂O₂S:0.03Ti,0.03Eu phosphors and single Eu or Ti doped Y₂O₂S phosphors were prepared and their luminescent properties were investigated in detail by photoluminescence (PL) spectra, long afterglow spectra and thermoluminescence spectra measurements. The results showed that Y₂O₂S:Ti,Eu phosphors possess orange-red afterglow color with afterglow time above 5 h. The reddish afterglow color, which corresponds to a set of linear Eu³⁺ emissions at low-energy range (540-630 nm), was demonstrated to come from the energy transfer process from yellow Ti afterglow emissions, the proposed energy transfer mechanism may well explain the Eu³⁺ afterglow emission.     

Photoluminescence properties of Sr1-xSi2O2N2: Eux as green to yellow-emitting phosphor for blue pumped white LEDs

This study evaluated potential applications of green to yellow-emitting phosphors (Sr_1−xSi₂O₂N₂: Eu²⁺_x) in blue pumped white light emitting diodes. Sr_1-xSi₂O₂N₂: Eu²⁺_x was synthesized at different Eu²⁺ doping concentrations at 1450 °C for 5 h under a reducing nitrogen atmosphere containing 5% H₂ using a conventional solid reaction method. The X-ray diffraction patterns of the prepared phosphor (Sr_1-xSi₂O₂N₂: Eu²⁺_x) were indexed to the SrSi₂O₂N₂ phase and an unknown intermediate phase. The photoluminescence properties of these phosphors (Sr_1−xSi₂O₂N₂: Eu²⁺_x) showed that the samples were excited from the UV to visible region due to the strong crystal field splitting of the Eu²⁺ ion. The emission spectra under excitation of 450 nm showed a bright color at 545-561 nm. The emission intensity increased gradually with increasing Eu²⁺ doping concentration ratio from 0.05 to 0.15. However, the emission intensity decreased suddenly when the Eu²⁺ concentration ratio was >0.2. As the doping concentration of Eu²⁺ was increased, there was a red shift in the continuous emission peak. These results suggest that Sr_1-xSi₂O₂N₂: Eu₂⁺_x phosphor can be used in blue-pumped white light emitting diodes.     

Eu/Tb ions co-doped white light luminescence Y2O3 phosphors

Y₂O₃:Eu³⁺, Tb³⁺ phosphors with white emission are prepared with different doping concentration of Eu³⁺ and Tb³⁺ ions and synthesizing temperatures from 750 to 950 °C by the co-precipitation method. The resulted phosphors were characterized by X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy. The results of XRD indicate that the crystallinity of the synthesized samples increases with enhancing the firing temperature. The photoluminescence spectra indicate the Eu³⁺ and Tb³⁺ co-doped Y₂O₃ phosphors show five main emission peaks: three at 590, 611 and 629 nm originate from Eu³⁺ and two at 481 and 541 nm originate from Tb³⁺, under excitation of 250-320 nm irradition. The white light luminescence color could be changed by varying the excitation wavelength. Different concentrations of Eu³⁺ and Tb³⁺ ions were induced into the Y₂O₃ lattice and the energy transfer from Tb³⁺→Eu³⁺ ions in these phosphors was found. The Commission International de l’Eclairage (CIE) chromaticity shows that the Y₂O₃:Eu³⁺, Tb³⁺ phosphors can obtain an intense white emission.     

Vacuum Ultraviolet Excited Photoluminescence Properties of Novel Na3Y9O3（BO3）8：Tb^3＋ Phosphor

The novel vacuum ultraviolet （VUV） excited Na3 Y9O3 （BO3）8：Tb^3＋ （NYOB：Tb^3＋） green phosphor is prepared. Strong VUV photoluminescence and high quenching concentration of Tb^3＋ （20 wt%） are observed in NYOB： Tb^3＋ and the strong emission are correlated with the unique layer-type structure of NYOB. All the characteristic 4 f - 5d transitions of Tb^3＋ and the host absorption band in VUV region are identified in the excitation spectrum. Based on the results, the energy levels scheme of Tb^3＋ in NYOB：Tb^3＋ is first established. This newly developed NYOB：Tb^3＋ phosphor shows excellent optical properties when compared with the commercial Zn2SiO4：Mn^2＋ and would be a potential VUV-excited green phosphor.     

Intense red phosphors for near-ultraviolet light-emitting diodes

The Sr_2?x Eu _x Al₂Si_1?y Mo _y O₇ as a new near-ultraviolet (UV) excited phosphors were synthesized and their luminescence properties under 393-nm excitation were investigated in detail. It was indicated that Sr_2?x Eu _x Al₂SiO₇ could be effectively excited by 393 nm, and it exhibited an intense red emission at 617 nm. The introduction of Mo ion and charge compensator ion Na did not change the position of the peaks but strengthened the absorption of the phosphors at ～400 nm and strongly enhanced the emission intensity of Eu³⁺ under 393-nm excitations. The intense red-emitting phosphor Sr_1.56Eu_0.22Na_0.22Al₂Si_0.98Mo_0.02O₇ with tetragonal sheet structure was obtained. Its chromaticity coordinates (0.659, 0.331) was very close to the NTSC standard values (0.67, 0.33) and its emission intensity was about 1.5 times higher than that of the commercial red phosphor Y₂O₂S:0.05Eu³⁺. This is considered to be an efficient red-emitting phosphor for near-UV InGaN-based light-emitting diodes (LEDs).     

Enhanced blue emission and EPR study of LaMgAl11O19:Eu phosphors

Europium doped LaMgAl₁₁O₁₉ phosphor was prepared by the combustion method. The as-prepared and post-treated (1350 °C 10 h 5% H₂+95% N₂) phosphors were investigated by X-ray diffraction (XRD), Fourier transform infrared (FT-IR), scanning electron microscopy (SEM), photoluminescence (PL) and electron paramagnetic resonance (EPR) techniques. XRD patterns show that LaMgAl₁₁O₁₉:Eu phosphors have hexagonal structure. FT-IR spectrum exhibits absorption bands corresponding to the stretching vibration of AlO₄ and AlO₆. Morphological studies reveal that this phosphor has faceted plates of varying sizes and shapes. The as-prepared LaMgAl₁₁O₁₉:Eu phosphor consists of both Eu³⁺ and Eu²⁺ ions. The phosphor exhibits a bright blue emission at 450 nm (4f⁶5d→4f⁷ transition of Eu²⁺). On post-treating the phosphor we are able to enhance the blue emission efficiency by 330%. The process was detected from the evolution of excitation, emission and EPR spectra and the results are discussed.     

Acetate reduction synthesis of Sr2Si5N8:Eu phosphor and its luminescence properties

A novel synthesis method was developed for the efficient red phosphor, Eu²⁺-activated Sr₂Si₅N₈, by employing the strontium acetate as both the reducing agent and strontium source. The phase purity of final product was strongly dependent on the heating rate of the precursors. Sr₂Si₅N₈:Eu²⁺ (2 at%) phosphor presented a broadband excitation spectrum in the range 300–500 nm, matching well with the blue emission (400/460 nm) of current InGaN light-emitting diodes (LEDs). The red emission peaking at 619 nm gave the relatively high (about 155%) intensity compared with the Y₃Al₅O₁₂ (YAG) (P46-Y3) standard phosphor. In addition, the saturated chromatic coordinates (0.638, 0.359) allowed it a promising candidate as a red phosphor in white LEDs application for illumination or display.     

Eu substitution and particle size control of Y2O2S for the excitation by UV light emitting diodes

Yttrium oxysulfide doped with europium (Y₂O₂S:Eu³⁺) red phosphor is used in UV light emitting diodes (LEDs) by mixing with blue and green phosphors to generate white light which are important for the application in general lighting. Here, we demonstrate the effect of shape and size and the concentration of activator (Eu) of red Y₂O₂S phosphor.     

Synthesis and luminescence properties of green phosphors Ca6Sr4(Si2O7)3Cl2:Eu2+ for white light emitting diodes

Divalent europium-activated chlorosilicate Ca₆Sr₄(Si₂O₇)₃Cl₂:Eu²⁺ phosphors were synthesized by a conventional solid-state reaction under reductive atmosphere. These phosphors can be efficiently excited by UV–visible light from 320 to 420 nm, which matches that of a near UV-emitting InGaN chip. Under the 360 nm excitation, Ca₆Sr_3.97(Si₂O₇)₃Cl₂:0.03Eu²⁺ phosphor shows a strong and broad emission centering at 515 nm, which is attributed to the 5d→4f transition of Eu²⁺ ion. The mechanism of concentration quenching was determined to be the dipole–dipole interaction and the critical energy-transfer distance of Eu²⁺ was calculated as 3.31 nm. The CIE chromaticity coordinates of Ca₆Sr_3.96(Si₂O₇)₃Cl₂:0.03Eu²⁺ phosphor are (0.127, 0.770) according to the emission spectrum. It can be expected that Ca₆Sr₄(Si₂O₇)₃Cl₂:Eu²⁺ phosphor is a promising candidate as the green component for near-ultraviolet InGaN-based white LED.     

Quantum cutting downconversion by cooperative energy transfer from Bi3+ to Yb3+ in Y2O3 phosphor

Bi~(3+) and Yb~(3+) codoped cubic Y2O3 phosphors are prepared by pechini sol-gel method.Strong near-infrared (NIR) emission around 980 nm from Yb~(3+)(2F5/2 → 2F7/2) is observed under ultraviolet light excitation.A broad excitation band ranging from 320 to 360 nm,owing to the 6s 2 →6s6p transition of Bi~(3+) ions,is recorded when the Yb~(3+) emission is monitored,which suggests a very efficient energy transfer from Bi~(3+) ions to Yb~(3+) ions.The Yb~(3+) concentration dependences of both the Bi~(3+) and the Yb~(3+) emissions are investigated.The decay curve of Bi ~(3+) emission under the excitation of 355 nm pulse laser is used to explore the Bi~(3+) →Yb~(3+) energy transfer process.Cooperative energy transfer (CET) is discussed as a possible mechanism for the near-infrared emission.     

Effect of Ca and Sr alkaline earth ions on luminescence properties of BaAl12O19:Eu nanophosphor

Nanosized barium aluminate materials was doped by divalent cations (Ca²⁺, Sr²⁺) and Eu²⁺ having nominal compositions Ba_1−xMxAl₁₂O₁₉:Eu (M=Ca and Sr) (x=0.1-0.5), were synthesized by the combustion method. These phosphors were characterized by XRD, scanning electron microscopy-energy-dispersive spectrometry (SEM-EDS) and photoluminescence measurement. The photoluminescence characterization showed the presence of Eu ion in divalent form which gave emission bands peaking at 444 nm for the 320 nm excitation (solid-state lighting excitation), while for 254 nm it gave the same emission wavelength of low intensity (1.5 times) compared to 320 nm excitation. It was also observed that alkaline earth metal (Ca²⁺ and Sr²⁺) dopants increase the intensity of Eu²⁺ ion in BaAl₁₂O₁₉ lattice, thus this phosphor may be useful for solid-state lighting.     

Eu$lt;sup$gt;2+$lt;/sup$gt;的掺杂浓度对BaAl$lt;sub$gt;2$lt;/sub$gt;Si$lt;sub$gt;2$lt;/sub$gt;O$lt;sub$gt;8$lt;/sub$gt;：Eu$lt;sup$gt;2+$lt;/sup$gt;荧光粉发光特性的影响

采用化学共沉淀法一次煅烧工艺合成了BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉.用X射线衍射仪和荧光分光光度计等对BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉的相结构、发光性能进行了测试.结果表明：化学共沉淀法一次煅烧工艺合成的BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉为单相;其激发光谱分布在240—410 nm的波长范围,峰值位于320 nm处,可以被InGaN管芯产生的350—410 nm辐射有效激发;在365 nm近紫外光的激发下,测得其发射光谱是位于465 nm附近的宽带峰.BaAl₂Si₂O₈：Eu²⁺蓝色荧光粉的发光强度随Eu²⁺浓度的增大逐渐加强,当Eu²⁺掺杂的摩尔分数为3.5%时,发光强度达到最大值,而后随掺杂浓度的增加而减小,发生浓度猝灭;根据Dexter能量共振理论,该浓度猝灭是由于Eu²⁺的离子间交换相互作用引起的. 关键词： 2Si₂O₈：Eu²⁺')" href="#">BaAl₂Si₂O₈：Eu²⁺ 发光特性 蓝色荧光粉 化学共沉淀法     

Influence of Gamma-Ray Irradiation on Absorption and Fluorescent Spectra of Nd：YAG and Yb：YAG Laser Crystals

We investigate the influence of gamma-ray irradiation on the absorption and fluorescent spectra of Nd^3＋：Y3A15 O12 （Nd： YAG） and Yb^3＋ ： Y3A15 O12 （Yb： YAG） crystals grown by the Czochralski method. Two additional absorption （AA） bands induced by gamma-ray irradiation appear at 255nm and 340nm. The former is contributed due to Fe^3＋ impurity, the latter is due to Fe^2＋ ions and F-type colour centres. The intensity of the excitation and emission spectra as well as the fluorescent lifetime of Nd：YAG crystal decrease after the irradiation of 100 Mrad gamma-ray. In contrast, the same dose irradiation does not impair the fluorescent properties of Yb：YAG crystal. These results indicate that Yb： YA G crystal possesses the advantage over Nd： YA G crystal that has better reliability for applications in harsh radiant environment.