Line emission of SrBe2Si2O7:Eu2+ and BaBe2Si2O7:Eu2+

The compounds SrBe₂Si₂O₇ and BaBe₂Si₂O₇ both have the barylite structure. With 254 nm excitation, the Eu²⁺-activated compounds give UV emission peaking at 360 nm (Sr) and at 375 nm (Ba). Maximum quantum efficiencies of 40% (Sr) and 65% (Ba) were measured. The emission consists of a 5d-4f band emission as well as 4f-4f line emission, in contrast to many other Eu²⁺-activated oxides which generally show only 5d-4f band emission. At 77°K, both compounds show only the 4f-4f line emission peaking at 360 nm. At higher temperatures, 5d-4f band emission shows up at the cost of the line emission. A thermal equilibrium is assumed between the lowest excited 5d and 4f levels. The energy difference between these levels, calculated from the variation in the line-band intensity ratio with temperature, was computed to be 0.15 eV (Sr) and 0.09 eV (Ba). The occurrence of the line emission in the barylites is correlated with the weakness of the crystal field at the Eu²⁺ ions and with the high quenching temperature of the 5d-4f band emission.     

First-principles study on electronic structure of Sr2Bi2O5 crystal

The electronic structure of Sr₂Bi₂O₅ is calculated by the GGA approach. Both of the valence band maximum and the conduction band minimum are located at Γ-point. This means that Sr₂Bi₂O₅ is a direct band-gap material. The wide energy-band dispersions near the valence band maximum and the conduction band minimum predict that holes and electrons generated by band gap excitation have a high mobility. The conduction band is composed of Bi 6p, Sr 4d and O 2p energy states. On the other hand, the valence band can be divided into two energy regions ranging from −9.5 to −7.9 eV (lower valence band) and from −4.13 to 0 eV (upper valence band). The former mainly consists of Bi 6s states hybridizing with O 2s and O 2p states, and the latter is mainly constructed from O 2p states strongly interacting with Bi 6s and Bi 6p states.     

Photoluminescence of Eu in SrGa2S4

A photoluminescence (PL) study of the green-emitting SrGa₂S₄:Eu²⁺ phosphor is reported. Diffuse reflectance, excitation, and emission spectra were examined with the aim to enlarge the fundamental knowledge about the emission of the Eu²⁺ ion in this lattice. The thermal dependence of the radiative properties was investigated. In particular, the Stokes shift, the crystal field splitting and the activation energy of the thermal quenching were determined. By combining these results with the information presented in literature, we discussed the location of the Eu²⁺ levels relative to the valence and conduction bands of SrGa₂S₄.     

Conduction and valence band density of states of SnS2: Theory and experiment

The band structure of SnS₂ has been investigated over a wide energy range by pseudopotential band structure calculations and synchrotron radiation photoemission spectroscopy techniques. A good correspondence has been found between energy positions of the theoretical density of states features and structure in the constant initial state (CIS) and energy distribution curves (EDC's) for the conduction and the valence bands respectively. In the energy region between — 8 eV and 15 eV from the top of the valence band we observe four valence band and six conduction band peaks.     

Investigation of host-to-activator energy transfer and surface losses in SrY2O4:Eu under VUV excitation

We have completed a study of the optical properties of SrY₂O₄:Eu³⁺ under vacuum ultraviolet (VUV) excitation. Reflectance measurements on the undoped material yield a calculated band gap of about 6.1 eV. Studies on the doped material indicate that Eu³⁺ occupies the Y(1) and Y(2) sites in this host. Host-to-activator energy transfer calculations indicate a preference for transfer to Eu³⁺ at the Y(2) site. Modeling of the transfer efficiency data leads us to estimate that about 35% of absorbed radiation is lost to the surface under excitation near the band edge.     

Luminescence properties of SrSi2O2N2 doped with divalent rare earth ions

The optical properties of SrSi₂O₂N₂ doped with divalent Eu²⁺ and Yb²⁺ are investigated. The Eu²⁺ doped material shows efficient green emission peaking at around 540 nm that is consistent with 4f⁷→4f⁶5d transitions of Eu²⁺. Due to the high quantum yield (90%) and high quenching temperature (>500 K) of luminescence, SrSi₂O₂N₂:Eu²⁺ is a promising material for application in phosphor conversion LEDs. The Yb²⁺ luminescence is markedly different from Eu²⁺ and is characterized by a larger Stokes shift and a lower quenching temperature. The anomalous luminescence properties are ascribed to impurity trapped exciton emission. Based on temperature and time dependent luminescence measurements, a schematic energy level diagram is derived for both Eu²⁺ and Yb²⁺ relative to the valence and conduction bands of the oxonitridosilicate host material.     

Optical,thermal and polaron energy levels in α-Al2O3

Calculations of the thermal band gap, ionisation energy and O(2p) valence band width are reported based on defect lattice methods. From these it is estimated that the large polaron is the preferred hole state in α-Al₂O₃ by about 0.4 eV. Theoretical values for the optical and thermal energy levels of Ti³⁺ in α-Al₂O₃ are also reported.     

Electronic structure and Coulomb correlation energy in UO2 single crystal

High-resolution X-Ray Photoemission Spectroscopy (XPS) and Bremsstrahlung Isochromat Spectroscopy (BIS) measurements are reported for UO₂. Clear evidence is found for the localization of the 5f electrons. The Coulomb correlation energy and the p-d gap are determined to be 4.6 ± 0.8 and 5.0 ± 0.4 eV, respectively. A satellite observed 7 eV below the Uranium core levels is assigned to a final state excitation from the valence p band to the empty 5f³ state.     

Quantum Effect on the Energy Levels of Eu2+ Doped K2Ca2(SO4)3 Nanoparticles

Quantum confinement effect on the energy levels of Eu²⁺ doped K₂Ca₂(SO₄)₃ nanoparticles has been observed. The broad photoluminescence (PL) emission band of Eu²⁺ doped K₂Ca₂(SO₄)₃ microcrystalline sample observed at ～436 nm is found to split into two narrow well resolved bands, located at 422 and 445 nm in the nanostructure form of this material. This has been attributed to the reduction in the crystal field strength of the nanomaterials, which results in widening the energy band gap and splitting the broad 4f⁶5d energy level of Eu²⁺. Energy band gap values of the micro and nanocrystalline K₂Ca₂(SO₄)₃ samples were also determined by measuring the UV–visible absorption spectra. These values are 3.34 and 3.44 eV for the micro and nanocrystalline samples, respectively. These remarkable results suggest that activators having wide emission bands might be subjected to weak crystal strength via nanostructure materials to modify their electronic transitions. This might prove a powerful technique for producing new-advanced materials for use in the fields of solid state lasers and optoelectronic devises.     

Magnetic susceptibility of FeSb2 : A quasi-magnetic semiconductor

We study the magnetic susceptibility of FeSb₂ within a model of highly correlated valence band states and conduction electrons Coulomb interaction. Inter-band Coulomb and Hund type couplings are also considered. The latter are strong due to the d character of both valence and conduction bands edges. We suggest that the high susceptibility of FeSb₂(X ≈ 6×10^?4emu/mole) may be further enhanced by the addition of selected impurities, leading to a magnetic ground state.     

Eu2+,Mn2+在BaZnP2O7中的发光及Eu2+→Mn2+能量传递

采用高温固相法合成了BaZnP₂O₇:Eu²⁺,Mn²⁺荧光粉,并对其发光性质及Eu²⁺对Mn²⁺的能量传递机理进行了研究.Eu²⁺和Mn²⁺在380 nm和670nm的发射峰分别由Eu²⁺的5d—4f跃迁和Mn²⁺的⁴T₁(^{4关键词： 磷酸盐 2+}')" href="#">Eu²⁺ 2+')" href="#">Mn²⁺ 能量传递     

Energy levels of rare-earth ions in Gd<Subscript>2</Subscript>O<Subscript>2</Subscript>S

The energies of the ground 4f ⁿ levels of tri- and divalent rare-earth ions with respect to the conduction and valence bands of Gd₂O₂S crystal has been determined. It is shown that the Pr³⁺, Tb³⁺, and Eu³⁺ ions can be luminescence centers in Gd₂O₂S. The levels of the Nd³⁺, Dy³⁺, Er³⁺, Tm³⁺, Sm³⁺, and Ho³⁺ ions lie in the valence band; therefore, these ions cannot play the role of activators. The ground 4f level of the Ce³⁺ ion is near the midgap, due to which Ce³⁺ effectively captures holes from the valence band and electrons from the conduction band and significantly decreases the afterglow level of the Gd₂O₂S:Pr and Gd₂O₂S:Tb phosphors.     

An ab initio molecular orbital study of the electronically excited and cationic states of the ozone molecule and a comparison with spectral data

A number of valence and Rydberg, singlet and triplet excited states for ozone in the excitation energy range 1–12eV have been calculated by large scale CI methods preceded by MCSCF studies. A comparison of the theoretical intensity envelope with the VUV + EELS spectrum has been made. The present work supports the assignments for the Huggins + Hartley bands as having two electronic origins, 2 ¹A₁ and 1 ¹B₂. The experimental ～ 9.3eV and ～ 10.2eV bands of the VUV spectrum must have adventitious superposition of valence states on Rydberg transitions, because the high oscillator strengths of the valence states cannot be attributed to the 8.8eV broad band. A number of new valence and Rydberg states have been calculated, and these lead to the conclusion that the experimental 9–11 eV VUV spectral range in particular must yield more experimental states than the few so far identified. This suggests a major need for more sophisticated methods of experimental study for the excited state manifolds. The use of various MCSCF/CI studies of the vertical cationic states, supports the IP order as ²A₁ < ²B₂ < ²A₂. A re-analysis of the 12–13.4eV range of the UV-photoelectron band has been performed, with a view to determining the adiabatic IPs more accurately. The present work suggests that the adiabatic IP₂ lies at 12.86eV, slightly lower than has been assumed, with consequential effect on the analysis of the VUV spectrum near 9.4eV.     

A first-principles calculation on the electronic properties of Si/N-codoped TiO2

To deeply understand the effects of Si/N-codoping on the electronic structures of TiO₂ and confirm their photocatalytic performance, a comparison theoretical study of their energetic and electronic properties was carried out involving single N-doping, single Si-doping and three models of Si/N-codoping based on first-principles. As for N-doped TiO₂, an isolated N 2p state locates above the top of valence band and mixes with O 2p states, resulting in band gap narrowing. However, the unoccupied N 2p state acts as electrons traps to promote the electron-hole recombination. Using Si-doping, the band gap has a decrease of 0.24 eV and the valence band broadens about 0.30 eV. These two factors cause a better performance of photocatalyst. The special Si/N-codoped TiO₂ model with one O atom replaced by a N atom and its adjacent Ti atom replaced by a Si atom, has the smallest defect formation energy in three codoping models, suggesting the model is the most energetic favorable. The calculated energy results also indicate that the Si incorporation increases the N concentration in Si/N-codoped TiO₂. This model obtains the most narrowed band gap of 1.63 eV in comparison with the other two models. The dopant states hybridize with O 2p states, leading to the valence band broadening and then improving the mobility of photo-generated hole; the N 2p states are occupied simultaneously. The significantly narrowed band gap and the absence of recombination center can give a reasonable explanation for the high photocatalytic activity under visible light.     

Excitation and Emission Spectra of Cs2NaLnCl6 Crystals Using Synchrotron Radiation

ABSTRACT

The visible emission and vacuum ultraviolet excitation spectra of the series Cs₂NaLnCl₆ (Ln = Y, Nd, Sm, Eu, Tb, Er, Yb) and Cs₂NaYCl₆:Ln³⁺ (Ln = Sm, Er) have been recorded using synchrotron radiation at room temperature, and in some cases at 10 K. The excitation spectra comprise features associated with charge transfer, excitation from the valence to conduction band, and impurity bands. No d–f emissions were observed for these Ln³⁺ ions, so that the emission bands comprise intraconfigurational 4f ^N –4f ^N transitions and impurity bands, whose natures are discussed. Theoretical simulations of the f–d absorption spectra have been included. The comparison with data from the synchrotron at Desy enables a comprehensive account of the ground (or vibrationally excited ground for Ln²⁺) states of the Ln³⁺ 4f ^N , Ln³⁺ 4f ^N?15d, and Ln²⁺ 4f ^N+1 configurations relative to the valence and conduction bands of Cs₂NaLnCl₆, for which the band gaps are between 6.6 and 8.1 eV.     

Ab initio calculations of band structure and thermophysical properties for SnS2 and SnSe2

The electronic band structure and elastic constants of SnS₂ and SnSe₂ have been calculated by using density-functional theory (DFT). The calculated band structures show that SnS₂ and SnSe₂ are both indirect band gap semiconductors. The upper valence bands originate mainly from S_p and Sn_d electrons, while the lowest conduction bands are mainly from (S, Se) _p and Sn_s states. The calculated elastic constants indicate that the bonding strength along the [100] and [010] direction is stronger than that along the [001] direction and the shear elastic properties of the (010) plane are anisotropic for SnS₂ and SnSe₂. Both compounds exhibit brittle behavior due to their low B/G ratio. Relationships among volumes, the heat capacity, thermal expansion coefficients, entropy, vibrational energy, internal energy, Gibbs energy and temperature at various pressures are also calculated by using the Debye mode in this work.     

The concentration quenching and crystallographic sites of Eu2+ in Ca2BO3Cl

A yellow phosphor, Ca2BO3CI：Eu2＋, is prepared by the high-temperature solid-state method. Under the condition of excitation sources ranging from ultraviolet to visible light, efficient yellow emission can be observed. The emission spectrum shows an asymmetrical single intensive band centred at 573 nm, which corresponds to the 4f65dl→4f7 transition of Eu2＋. Eu2＋ ions occupy two types of Ca2＋ sites in the Ca2BO3C1 lattice and form two corresponding emission centres, respectively, which lead to the asymmetrical emission of Eu2＋ in Ca2BO3C1. The emission intensity of Eu2＋ in Ca2BO3C1 is influenced by the Eu2＋ doping concentration. Concentration quenching is discovered, and its mechanism is verified to be a dipole-dipole interaction. The value of the critical transfer distance is calculated to be 2.166 nm, which is in good agreement with the 2.120 nm value derived from the experimental data.     

Eu3+掺杂的Sr2CeO4发光材料的光致发光研究

利用高温固相反应法制备了Eu³⁺掺杂的Sr₂CeO₄样品,并对其吸附水前后的光谱特性进行了研究.结果发现,对于刚制备的Sr_2-xEu_xCeO_4+x/2样品, 在Ce⁴⁺—O^2-的电荷迁移激发中,只有强激发带(～35700cm^-1)与Eu³⁺离子间存在能量传递,而弱激发带 (～29400cm^-1)只是引起Ce⁴⁺—O^2-的电荷迁移发射;在Sr_2-xEu_xCeO_4+x/2样品吸附水后,Eu³⁺的线状吸收跃迁强度显著增加, Ce⁴⁺—O^2-两个激发带均向Eu³⁺离子传递能量. Ce⁴⁺—O^2-强激发带通过交换作用向Eu³⁺离子传递能量,而弱激发带与Eu³⁺离子间的能量传递机理是非辐射多极子近场力的相互作用. 关键词： 2-xEu_xCeO_4+x/2')" href="#">Sr_2-xEu_xCeO_4+x/2 发光性质 能量传递 吸附水     

Green Eu-doped Ba3Si6O12N2 phosphor for white light-emitting diodes: Synthesis, characterization and theoretical simulation

The Eu²⁺-doped Ba₃Si₆O₁₂N₂ green phosphor (Eu_xBa_3−xSi₆O₁₂N₂) was synthesized by a conventional solid state reaction method. It could be efficiently excited by UV-blue light (250-470 nm) and shows a single intense broadband emission (480-580 nm). The phosphor has a concentration quenching effect at x=0.20 and a systematic red-shift in emission wavelength with increasing Eu²⁺ concentration. High quantum efficiency and suitable excitation range make it match well with the emission of near-UV LEDs or blue LEDs. First-principles calculations indicate that Ba₃Si₆O₁₂N₂:Eu²⁺ phosphor exhibits a direct band gap, and low band energy dispersion, leading to a high luminescence intensity. The origin of the experimental absorption peaks is clearly identified based on the analysis of the density of states (DOS) and absorption spectra. The photoluminescence properties are related to the transition between 4f levels of Eu and 5d levels of both Eu and Ba atoms. The 5d energy level of Ba plays an important role in the photoluminescence of Ba₃Si₆O₁₂N₂:Eu²⁺ phosphor. The high quantum efficiency and long-wavelength excitation are mainly attributed to the existence of Ba atoms. Our results give a new explanation of photoluminescence properties and could direct future designation of novel phosphors for white light LED.     

Optical absorption due to transitions between bands and local levels in CdCr2Se4

The theory of optical absorption due to transitions between a valence band and a hydrogen-like local level associated with a conduction band is modified to permit an arbitrary power-law dependence of energy on the magnitude of the wave-vector of carriers in the valence band. The observed absorption for photon energies below 1.6 eV in the ferromagnetic semiconductor CdCr₂Se₄ is discussed in terms of a combination of two types of terms. The first type of absorption is due to transitions to a local level from a band with two branches, in each of which there is an energy region with a width of 0.28 eV or more beginning 0.10–0.16 eV from the band edge, in which the energy measured from some origin near but not necessarily equal to the band-edge is approximately proportional to (wave-vector)^{($\text{1}\text{3}$)}. The second type of absorption has a dependence on photon energy ?ω of the form (?ω ? E₃)², where E₃ is a threshold energy probably connected with indirect transitions between bands as suggested by Sakai, Sugano and Okabe. After constraints on parameters appearing in the theory are imposed by use of results of these authors and of Shepherd, it is found that curves of Harbeke and Lehmann on optical absorption in CdCr₂Se₄ at 4.2, 78, 130 and 298 K in the photon-energy range 1.14–1.42 eV can be fitted to a mean accuracy of 3%, using an average of 3.75 adjustable parameters for each curve. The strength of the indirect band-to-band absorption does not have the temperature dependence expected for phonon-assisted indirect band-to-band transitions, but can be described by a term independent of temperature plus another term proportional to the square of the deviation of the magnetization from saturation. The fitting of the absorption curves requires that the ratio of the widths of the two branches of the bands varies from about 1.6 at low temperatures to 1.35 at 298 K and that the total width of the bands involved is less than 1 eV.