磁性隧道结中的量子相干输运研究

采用散射矩阵的方法研究了铁磁/绝缘层/半导体/绝缘层/铁磁(FM/I/SM/I/FM)磁性双隧道结的量子相干输运特性.研究发现当隧穿电子平均自由程(l_p)和中间层半导体厚度(L)可比拟时双结隧道磁阻(TMR)将随L的变化产生量子振荡，当l_p远大于L时振荡拐点处出现cut-off波矢，分析表明cut-off波矢主要是来自于隧道结两边的铁磁和半导体层隧穿电子动量波矢的高度不匹配性，随着L相似文献   

相干和非相干合成光束对金属瑞利粒子的光学俘获

研究了两光束的合成方式(相干和非相干合成)对俘获金属瑞利粒子的辐射力和稳定性的影响,着重研究了辐射力与合成方式、离轴距离、相干参数和粒子半径的关系.结果表明,不同合成方式下,离轴距离和相干参数都分别存在临界值d_c和α_c,在0d_c或α>α_c时,焦面处光强呈中心凹陷分布,此时横向梯度力不能作为回复力俘获金属瑞利粒子.在0<d≤d_c时,与非相干合成光束比较,相干合成光束在焦面处光强、辐射力、俘获刚性和纵向俘获范围更大.因此,适当选择合成方式,较小离轴距离和较低相干参数可有利于合成光束对金属瑞利粒子的俘获.     

Pt插层对Co/FeMn界面的影响

采用磁控溅射的方法制备了Co/FeMn/Co多层膜,研究了Co（底部）/FeMn和FeMn/Co（顶部）界面插入Pt层后磁矩的变化情况．通过测量磁滞回线可知,Co（底部）/FeMn界面的Pt插层改变了体系的饱和磁化强度Ｍ_s,随着Co层厚度（t_Co）的增加Ｍ_s不断趋近于Co块体结构理论值1440 kA/m．这是因为Co（底部）/FeMn界面产生了净磁矩,而界面处的Pt插层可以减少这种净磁矩的产生．但是 关键词： 磁性多层膜 垂直磁各向异性 交换耦合     

超薄栅超短沟LDD nMOSFET中栅电压对栅致漏极泄漏电流影响研究

本文研究了90nm CMOS工艺下栅氧化层厚度为1.4 nm沟道长度为100 nm的轻掺杂漏(LDD)nMOSFET栅电压V_G对栅致漏极泄漏 (GIDL)电流I_d的影响,发现不同V_G下ln (I_d/(V_DG-1.2))-1/(V_DG-1.2)曲线相比大尺寸厚栅器件时发生了分裂现象. 通过比较V_G变化下ln(I_d/(V_DG-1.2))的差值,得出V_G与这种分裂现象之间的作用机理,分裂现象的产生归因于V_G的改变影响了GIDL电流横向空穴隧穿部分所致. 随着|V_G|的变小,ln(I_d/(V_DG-1.2))曲线的斜率的绝对值变小.进一步发现不同V_G对应的ln (I_d/(V_DG-1.2))曲线的斜率c及截距d与V_G呈线性关系,c,d曲线的斜率分别为3.09和-0.77. c与d定量的体现了超薄栅超短沟器件中V_G对GIDL电流的影响,基于此,提出了一个引入V_G 影响的新GIDL电流关系式.     

自旋为1/2的XY模型亚铁磁棱型链的物性和有序-无序竞争

利用不变本征算符法, 计算低温下自旋为1/2的XY模型一维亚铁磁棱型链系统的元激发谱, 讨论在此系统中不同的特殊情形下的元激发能量, 从而给出体系的三个临界磁场强度的解析解H_C1, H_C2, H_peak. 分析不同外磁场下 体系的磁化强度随温度的变化规律, 发现三个临界磁场强度的解析解H_C1, H_C2, H_peak是正确的, 并从三个元激发对磁化强度的贡献进行了说明. 低温下磁化强度随外磁场的变化呈现1/3磁化平台. 体系的磁化率随温度或者外磁场的变化都出现了双峰现象. 这说明双峰源于二聚体分子内电子自旋平行排列的铁磁交换作 用能和二聚体与单基体分子间电子自旋反平行排列的反铁磁交换作用能, 热无序能, 外磁场强度相关的自旋磁矩势能之间的竞争.     

冲击荷载下颗粒物质缓冲性能的试验研究

颗粒物质是一种复杂的能量耗散体系. 颗粒间的摩擦和黏滞作用可使冲击荷载引起的能量有效衰减, 颗粒间的力链结构又可将瞬时局部冲击荷载进行空间扩展和时间延长, 达到良好的缓冲效果. 为研究颗粒物质对冲击荷载的缓冲性能, 本文采用重力作用下球体冲击筒内颗粒物质的试验系统, 研究了筒体底部作用力在颗粒材料、颗粒厚度等因素影响下的变化规律. 试验结果表明: 非规则颗粒具有更加良好的缓冲性能, 粗颗粒的缓冲性能略高于细颗粒. 颗粒厚度H是影响缓冲性能的重要因素, 并存在一个临界厚度H_c. 当H<H_c时, 缓冲性能随H的增加而增强; 当H>H_c时, H对缓冲效果的影响不再显著. 以上研究是在同一冲击能量下进行的, 而对于不同冲击能量下的H_c还需要深入开展. 通过颗粒物质对冲击荷载缓冲性能的试验研究, 可揭示颗粒材料的基本物理力学行为, 为其在缓冲减振领域中的应用提供依据.     

超导In-Sn合金膜临界场的非线性非定域效应

本文对In+2％Sn,In+3％Sn的不同厚度合金膜的临界场H_c进行了研究,从实验上第一次提供了电子平均自由程l≠∞时的H_c～d的数据。这些实验结果表明,关于超导膜临界场问题只能用非线性非定域理论描述,在薄膜极限下,不论纯膜或合金膜,H_c∝d^-3/2;定域的London,Г-Л理论和线性非定域的Ittner理论皆不适用。一部分文献中给出H_c∝d^-1的结论,是由于那些作者分析实验结果的方法不恰当所致。     

具有垂直各向异性(Pt/Co)n/FeMn多层膜的交换偏置

采用磁控溅射方法制备了以Pt为缓冲层和保护层的具有垂直各向异性(Pt/Co)n/FeMn多层膜.研究结果表明,多层膜的垂直交换偏置场Hex和反铁磁层厚度的关系与其具有平面各向异性的交换偏置场随反铁磁层厚度变化趋势相近.随着铁磁层调制周期数的增加,垂直交换偏置场Hex相应减小,并且与铁磁层的调制周期数近似成反比关系.(Pt/Co)3/FeMn的垂直交换偏置场Hex已经达到22.3kA/m.为了进一步提高Hex,在Co/FeMn的界面插入Pt层,当Pt层厚度为0.4nm时,Hex达到最大值39.8kA/m.     

关于Pt偶同位素的h9/2质子对

本文对于Pt偶同位素中的h_9/2质子对的排列现象作了比较系统的计算和讨论.结果表明,如用改善的Nilsson参数κ、μ,给出的h_9/2的排列频率与νi_13/2排列频率的差值Δhω_c=hω_c(πh_9/2)－hω_c(νi_13/2)对于78¹⁸⁴Pt106核具有最小值,约为75keV.这和最近实验上确定的¹⁸⁴Pt核转晕带上出现的大的上弯现象,是由于νi_13/2和πh_9/2两个排列频率非常靠近的结果一致.而运用Nilsson的标准κ、μ则不能给出这一结果.这两个排列的先后次序仍是值得深入研究的问题.对于相邻Pt偶同位素的πh_9/2排列频率的理论预言,期待着实验数据的检验.     

水/空气界面纳米颗粒单层膜流变特性的 锥体压入法研究

本文提出了利用锥体压入法研究水/空气界面上SiO₂纳米颗粒单层膜流变特性的新方法. 通过锥体的压入和上升使单层膜产生应变, 实时测定锥体压入-上升循环过程中表面压的变化. 实验表明, 表面压的尖锐变化是由单层膜受到的拉伸应变导致的. 表面压变化的幅度d∏ 和弛豫时间τ 显著依赖于颗粒在界面的吸附能, 因而随颗粒润湿性而发生明显变化. d∏ 和τ 分别与单层膜的弹性和黏性相关. 这些结果表明, 该方法有可能为深入研究纳米颗粒单层膜的流变性质提供新的途径.     

Suppression of interlayer segregation in spin-valve NiFe/Cu/NiFe/FeMn multilayers

Experimental results show that Cu atoms can float out to or segregate to the NiFe/FeMn interface for Ta/NiFe/Cu/NiFe/FeMn/Ta spin-valve multilayers, which results in a drop of the exchange-coupling field (H_ex) of NiFe/FeMn in the spin-valve multilayers. However, when a small amount of Bi atoms is deposited between the Cu and the pinned NiFe layers, Cu segregation to the NiFe/FeMn interface can be suppressed. At the same time, H_ex of NiFe/FeMn in the spin-valve multilayers with a Bi interfacial layer can be effectively increased. PACS 75.70.Cn; 82.80.Pv     

具有垂直各向异性(Pt/Co)n/FeMn多层膜的交换偏置

采用磁控溅射方法制备了以Pt为缓冲层和保护层的具有垂直各向异性(Pt/Co)_n/ FeMn多层膜.研究结果表明，多层膜的垂直交换偏置场H_ex和反铁磁层厚度的关 系与其具有平面各向异性的交换偏置场随反铁磁层厚度变化趋势相近.随着铁磁层调制周期 数的增加，垂直交换偏置场H_ex相应减小，并且与铁磁层的调制周期数近似成反 比关系.(Pt/Co)₃/FeMn的垂直交换偏置场H_ex已经达到22.3kA/m.为 关键词： 交换偏置 垂直各向异性 多层膜     

Bi对自旋阀钉扎场的影响及机理

实验发现将Bi插入自旋阀多层膜TaNiFeCuBi(x)NiFeFeMn中可以显著地提高自旋阀的钉扎场Hex.采用XPS对Cu,Bi元素的分布情况进行了研究,发现Bi的插入明显抑制了Cu原子在自旋阀的制备过程中在NiFeFeMn界面的偏聚.进一步研究表明:自旋阀钉扎层NiFeFeMn界面中,Cu原子的存在是导致自旋阀Hex小于TaNiFeFeMn多层膜Hex的主要原因. 关键词： 自旋阀 钉扎场 交换各向异性 表面活化剂     

Effects of controlling Cu spacer inter-diffusion by diffusion barriers on the magnetic and electrical stability of GMR spin-valve devices

An ultra-thin Co or CoFe diffusion barrier inserted at the NiFe/Cu interfaces was revealed to effectively control the electrical and magnetic stability of NiFe/Cu/NiFe-based giant magnetoresistance (GMR) spin-valve spintronics devices (SVSDs) operating at high current density. It was found that the activation energy, E_a, related to the electromigration (EM)-induced inter-diffusion process for the patterned NiFe(3)/Cu(2)/NiFe(3 nm) magnetic multi-layered devices (MMLD) was remarkably increased from 0.52±0.2 eV to 1.17±0.16 eV after the insertion of an ultra-thin Co diffusion barrier at the NiFe/Cu interfaces. The dramatically reduced “current shunting paths” from the Cu spacer to the NiFe thin films and the development of “self-healing process” resulted from the effectively restrained Cu inter-diffusion (intermixing with Ni atoms) due to the diffusion barriers were found to be primarily responsible for the improvement of electrical and magnetic stability. The further investigation on the effects of controlling Cu spacer inter-diffusion by diffusion barriers on the EM and thermomigration (TM)-induced magnetic degradation was carried out for the NiFe/(Co or Co₉₀Fe₁₀)/Cu/(Co or Co₉₀Fe₁₀)/NiFe/FeMn top exchange-biased GMR (EBGMR) SVSDs electrically stressed under the applied DC current density of J=2.5×10⁷ A/cm² (I=16.5∼17.25 mA). It was clearly confirmed that the Co and the CoFe diffusion barriers effectively control the Cu spacer inter-diffusion resulting in a smaller reduction in both GMR ratio and exchange bias field of the EBGMR SVSDs. Furthermore, it was obviously observed that the effects of CoFe diffusion barrier on controlling the Cu spacer inter-diffusion are more significant than that of Co. The effectively reduced Mn atomic inter-diffusion at the NiFe/FeMn interface and the well-maintained interfacial spin-dependent scattering resulted from the control of EM and TM-induced Cu spacer inter-diffusion were the main physical reasons for the significant improvement of magnetic and electrical degradation of top EBGMR SVSDs.     

Effect of Ta buffer and NiFe seed layers on pulsed-DC magnetron sputtered Ir20Mn80/Co90Fe10 exchange bias

A systematic investigation has been done on the correlation between texture, grain size evolution and magnetic properties in Ta/Ni₈₁Fe₁₉/Ir₂₀Mn₈₀/Co₉₀Fe₁₀/Ta exchange bias in dependence of Ta buffer and NiFe seed layer thickness in the range of 2-10 nm, deposited by pulsed DC magnetron sputtering technique. A strong dependence of 〈1 1 1〉 texture on the Ta/NiFe thicknesses was found, where the reducing and increasing texture was correlated with exchange bias field and unidirectional anisotropy energy constant at both NiFe/IrMn and IrMn/CoFe interfaces. However, a direct correlation between average grain size in IrMn and H_ex and H_c was not observed. L1₂ phase IrMn₃ could be formed by thickness optimization of Ta/NiFe layers by deposition at room temperature, for which the maximum exchange coupling parameters were achieved. We conclude finally that the coercivity is mainly influenced by texture induced interfacial effects at NiFe/IrMn/CoFe interfaces developing with Ta/NiFe thicknesses.     

Cr/Ru/PtCo/Ru/PtCo/Ru介质中底层Ru厚度对磁记录特性影响的研究

讨论了Cr/Ru（1）/PtCo（稳定层）/Ru（2）/PtCo（记录层）/Ru（3） 结构的矫顽力Hc_c与层间反铁磁耦合交换场Hex_ex随Ru（1）与Ru（2）厚度变 化的规律.研究发现 ，样品的矫顽力及交换场随Ru（1）厚度增加而增大， 这可能是由Ru（1）hcp结构引起的. 矫顽力及交换场在Ru（2）厚度为08nm处有峰值. 关键词： 磁记录 反铁磁耦合     

Bottom and top AF/FM interfaces of NiFe/FeMn/NiFe trilayers

X-ray reflectivity analyses were performed in the Si/WTi (7 nm)/NiFe (30 nm)/FeMn (13 nm)/NiFe (10 nm)/WTi (7 nm) exchange-biased system prepared by magnetron sputtering under three different argon working pressures. Layer-by-layer analyses were realized in order to obtain the interfacial roughness parameters quantitatively. For a fixed argon pressure, the root-mean-square roughness (including the atomic grading) of the upper (FeMn/NiFe) interface are greater than that for the lower one in all studied samples. Argon working pressure also has severe influence over the NiFe/FeMn interfaces, being more pronounced at the upper interfaces.     

Extracting uniaxial anisotropy of ferromagnetic layer in exchange-biased system

Effective anisotropy of the ferromagnetic pinned layer of ferro(FM)-antiferromagnetic (AF)-coupled NiFe(FM)/FeMn(AF) exchange-biased system was investigated in a broad frequency range (100 MHz-5 GHz) using a complex permeability spectrum. The exchange bias and effective uniaxial anisotropy fields of the thin film have been computed theoretically using the Landau-Lifschitz-Gilbert (LLG) equation. From the measurements, uniaxial anisotropy of the pinned FM layer has been extracted to understand the nature of the exchange bias in the system. It is found that the uniaxial anisotropy field of NiFe layer when exchange biased with the AF layer increases from 5 to 15 Oe at different external magnetic fields.